ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The lattice parameter of undoped and boron doped polycrystalline diamond films has been measured up to 8×1020 B cm−3. It varies slightly according to the three crystallographic directions [111], [220], and [311] investigated here. The cell parameters for the undoped films are within the published values for synthetic crystal and thin films. For the boron doped films, the cell parameter has a high expansion coefficient versus boron incorporation, with a mean value of Δa/a=3×10−24 [B], ([B] in cm−3), and a variation law in the [220] direction in striking agreement with a Russian work. The simplest Vegard model predicts a smaller variation, while both the deformation potential (but with a high deformation potential on the boron impurity band of +19.5 eV) and a defect model might explain the experimental results. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.363856
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