Electronic Resource
Cole, M. W.
;
Eckart, D. W.
;
Han, W. Y.
;
[et al.]
Pfeffer, R. L.
;
Monahan, T.
;
Ren, F.
;
Yuan, C.
;
Stall, R. A.
;
Pearton, S. J.
;
Li, Y.
;
Lu, Y.
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
80 (1996), S. 278-281
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
W was found to produce low specific contact resistance (ρc∼8.0×10−5 Ω cm2) ohmic contacts to n+-GaN (n=1.5×1019 cm−3) with limited reaction between the metal and semiconductor up to 1000 °C. The formation of the β–W2N and W–N interfacial phases were deemed responsible for the electrical integrity observed at these annealing temperatures. No Ga out-diffusion was observed on the surface of thin (500 A(ring)) W contacts even after 1000 °C, 1 min anneals. Thus, W appears to be a stable contact to n+-GaN for high temperature applications. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.362816
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