ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2538-2543 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The avalanche multiplication and excess noise properties of a range of submicron Si diodes have been measured and analyzed using a model for impact ionization which includes the effect of dead space, modified to allow for a gradual onset of ionization, with realistic threshold energies. Good agreement is achieved between the predictions of this "soft dead space" model and measurements of multiplication and excess noise, both on a range of submicron diodes with uniform electric fields and also on a p+n diode with a highly nonuniform electric field. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...