Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
55 (1989), S. 377-379
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have achieved precise control of the lateral electrical damage accompanying ion beam patterning of submicron electron devices from semiconductor materials. In situ transport measurements, made in the etching chamber during the definition process, provide an exact and reproducible means of end-point detection, irrespective of material structure and ion beam parameters. We apply this to routinely fabricate conducting channels having widths below 100 nm from high-mobility GaAs/AlGaAs heterojunctions. Subsequent low-temperature magnetotransport measurements and successive optimization of processing conditions enable us to systematically obtain the minimum conducting width. Through these studies we explore the ultimate resolution limits of the ion beam patterning process.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101876
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