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  • 1
    Electronic Resource
    Electronic Resource
    Quantum device microfabrication: Resolution limits of ion beam patterning (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 377-379 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have achieved precise control of the lateral electrical damage accompanying ion beam patterning of submicron electron devices from semiconductor materials. In situ transport measurements, made in the etching chamber during the definition process, provide an exact and reproducible means of end-point detection, irrespective of material structure and ion beam parameters. We apply this to routinely fabricate conducting channels having widths below 100 nm from high-mobility GaAs/AlGaAs heterojunctions. Subsequent low-temperature magnetotransport measurements and successive optimization of processing conditions enable us to systematically obtain the minimum conducting width. Through these studies we explore the ultimate resolution limits of the ion beam patterning process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101876
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  • 2
    Electronic Resource
    Electronic Resource
    Negative intrinsic resistivity of an individual domain wall in epitaxial (Ga,Mn)As microdevices (2004)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 431 (2004), S. 52-56 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Magnetic domains, and the boundaries that separate them (domain walls, DWs), play a central role in the science of magnetism. Understanding and controlling domains is important for many technological applications in spintronics, and may lead to new devices. Although theoretical efforts have ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/nature02809
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  • 3
    Electronic Resource
    Electronic Resource
    Measurement of the quantum of thermal conductance (2000)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 404 (2000), S. 974-977 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The physics of mesoscopic electronic systems has been explored for more than 15 years. Mesoscopic phenomena in transport processes occur when the wavelength or the coherence length of the carriers becomes comparable to, or larger than, the sample dimensions. One striking result in this ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/35010065
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  • 4
    Electronic Resource
    Electronic Resource
    Ultranarrow conducting channels defined in GaAs-AlGaAs by low-energy ion damage (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2133-2135 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have laterally patterned the narrowest conducting wires of two-dimensional electron gas (2DEG) material reported to date. The depletion induced by low-energy ion etching of GaAs-AlGaAs 2DEG structures was used to define narrow conducting channels. We employed high voltage electron beam lithography to create a range of channel geometries with widths as small as 75 nm. Using ion beam assisted etching by Cl2 gas and Ar ions with energies as low as 150 eV, conducting channels were defined by etching only through the thin GaAs cap layer. This slight etching is sufficient to entirely deplete the underlying material without necessitating exposure of the sidewalls that results in long lateral depletion lengths. At 4.2 K, without illumination, our narrowest wires retain a carrier density and mobility at least as high as that of the bulk 2DEG and exhibit quantized Hall effects. Aharonov–Bohm oscillations are seen in rings defined by this controlled etch-damage patterning. This patterning technique holds promise for creating one-dimensional conducting wires of even smaller sizes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98970
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  • 5
    Electronic Resource
    Electronic Resource
    Monocrystalline silicon carbide nanoelectromechanical systems (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 162-164 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiC is an extremely promising material for nanoelectromechanical systems given its large Young's modulus and robust surface properties. We have patterned nanometer scale electromechanical resonators from single-crystal 3C-SiC layers grown epitaxially upon Si substrates. A surface nanomachining process is described that involves electron beam lithography followed by dry anisotropic and selective electron cyclotron resonance plasma etching steps. Measurements on a representative family of the resulting devices demonstrate that, for a given geometry, nanometer-scale SiC resonators are capable of yielding substantially higher frequencies than GaAs and Si resonators. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1338959
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  • 6
    Electronic Resource
    Electronic Resource
    A low-noise series-array Josephson junction parametric amplifier (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3078-3080 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have obtained parametric gain at 19 GHz from a distributed Josephson junction parametric amplifier whose active gain medium consists of a series array of 1000 Josephson junctions embedded in a coplanar waveguide. When cooled to 1.7 K the amplifier provides 16 dB gain in a mode where the internally generated double sideband noise referred to input is 0.5±0.1 K. This noise is consistent with Nyquist noise generated from the losses. An instantaneous bandwidth of 125 MHz has been observed with a peak gain of 12 dB. The 3 dB compression point with a peak gain of 14.6 dB is -90.5 dB and the dynamic range is 38 dB. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116845
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  • 7
    Electronic Resource
    Electronic Resource
    Sensitivity and spatial resolution for electron-spin-resonance detection by magnetic resonance force microscopy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6931-6938 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The signal intensity of electron spin resonance in magnetic resonance force microscopy (MRFM) experiments employing periodic saturation of the electron spin magnetization is determined by four parameters: the rf field H1, the modulation level of the bias field Hm, the spin relaxation time τ1, and the magnetic size R(∂H/∂z) of the sample. Calculations of the MRFM spectra obtained from a 2,2-diphenyl-1-picrylhydrazyl particle have been performed for various conditions. The results are compared with experimental data and excellent agreement is found. The systematic variation of the signal intensity as a function of H1 and Hm provides a powerful tool to characterize the MRFM apparatus. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363767
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  • 8
    Electronic Resource
    Electronic Resource
    Narrow conducting channels defined by helium ion beam damage (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1964-1966 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a new technique for patterning narrow conducting channels in GaAs-AlGaAs two-dimensional electron gas (2DEG) materials. A low-energy He ion beam successfully patterned narrow wires with little or no etching of the thin GaAs cap. The damage propagation of the He ion even at low energies was sufficient to decrease the mobility of the 2DEG located deep within the structure. The damage can be removed by a low-temperature anneal but remains stable at room temperature. Conducting channels as narrow as 300 nm have been fabricated and measured using low-temperature magnetoresistance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100337
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  • 9
    Electronic Resource
    Electronic Resource
    Strong Hall voltage modulation in hybrid ferromagnet/semiconductor microstructures (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3087-3089 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a new magnetoelectronic device consisting of a μm-scale semiconductor cross junction and a patterned, electrically isolated, ferromagnetic overlayer with in-plane magnetization. The large local magnetic field emanating from the edge of the thin ferromagnetic film has a strong perpendicular magnetic component, B⊥(r), which induces a Hall resistance, RH, in the microjunction. External application of a weak in-plane magnetic field reverses the magnetization of the ferromagnet and with it B⊥(r), thus modulating RH. Our data demonstrate that this strong "local" Hall effect is operative at both cryogenic and room temperatures, and is promising for device applications such as field sensors or integrated nonvolatile memory cells. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120254
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  • 10
    Electronic Resource
    Electronic Resource
    Direct thermal conductance measurements on suspended monocrystalline nanostructures (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2687-2689 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe and demonstrate a new class of devices that enable direct thermal conductance measurements on monocrystalline nanostructures. These are possible through our newly developed techniques for three-dimensional, successive surface nanomachining of GaAs-based heterostructures. Our methods allow the patterning of complex devices comprising electrically insulating, mesoscopic thermal conductors with separate, thermal transducers in situ. Intimate thermal contact between these elements is provided by their epitaxial registry. Low-temperature thermal conductance measurements indicate that phonon boundary scattering in these initial nanometer is scale structures is partially specular. These devices offer promise for ultrasensitive bolometry and calorimetry. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118994
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