Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
57 (1990), S. 302-303
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The internal tensile stress in polycrystalline diamond films deposited on silicon substrates has been measured from 100 to 700 K by a vibrating-membrane method. The stress increases strongly with temperature, in a manner consistent with the elastic accommodation of the differential thermal strain between diamond and silicon. The results indicate that the films contain a tensile growth stress of about 500 MPa at the deposition temperature of 1123 K. Derived values of the biaxial elastic modulus fall in the range 730–850 GPa.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.103721
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