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S-passivated InP (100)-(1×1) surface prepared by a wet chemical process (1992)

Tao, Y. ; Yelon, A. ; Sacher, E. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 60 (1992), S. 2669-2671

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: A highly stable crystalline S-passivated InP(100) surface has been obtained by a simple wet chemical process, using illumination and heated (NH4)2S solution. Low-energy electron diffraction studies show a (1×1) diffraction pattern, which persists even after 3 days of exposure to the atmosphere. High-resolution photoemission studies show that the surface is terminated with a monolayer of sulfur, which forms bridge bonds only to indium. The P 2p core level is identical to that of a vacuum-cleaved InP surface. A possible structural model is presented.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.106890

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