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Semi-insulating InP grown by chemical beam epitaxy with pentacarbonyliron doping (1995)

Walker, J. D. ; Tsang, W. T.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 66 (1995), S. 2558-2560

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We present semi-insulating iron-doped InP grown by chemical beam epitaxy using the gaseous source pentacarbonyliron, Fe(CO)5. Analysis by secondary ion mass spectroscopy shows that iron incorporation is proportional to the Fe(CO)5 flow rate over the 5×1017–5×1019 cm−3 range studied. Use of Fe(CO)5 as an iron source also leads to high ∼1018 cm−3 carbon incorporation in the material, but this does not interfere with semi-insulating behavior. The material shows 30 MΩ cm resistivity for a broad range of Fe(CO)5 flow rates. No oxygen incorporation was observed © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.113166

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