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The S-passivation of Ge(100)-(1×1) (1995)

Anderson, G. W. ; Hanf, M. C. ; Norton, P. R. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 66 (1995), S. 1123-1125

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The treatment of Ge(100) in an aqueous ammonium sulfide solution is investigated by means of x-ray photoelectron spectroscopy, Auger electron spectroscopy, low-energy electron diffraction, scanning electron microscopy, and atomic force microscopy. This treatment is shown to produce an S-passivated Ge(100)-(1×1) surface, where the S atoms appear to be bridge bonded to the Ge atoms. Desorption of the S is observed to occur between 460 and 750 K and results in a Ge(100)-(1×1) surface with a surface morphology similar to that of the initial sample. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.113833

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