Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
67 (1995), S. 1877-1879
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A technique for fabricating submicron free-standing silicon pillars has been developed. The silicon pillars have a high packing density, and aspect ratios over 50:1 can easily be achieved. Photoassisted electrochemical etching in hydrofluoric acid is used to etch deep macropores in n-type silicon wafers which have been patterned by standard photolithography. The regular macropores can be used for fabricating photonic band-gap structures. The bulk silicon remaining between the close-packed macropores is oxidized. Free-standing pillars are then formed by subsequently wet etching the silicon dioxide. The pillars are the initial structures for forming quantum wires using further oxidation and etch steps. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.114362
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