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High rate dry etching of InGaP in BCl3 plasma chemistries (1995)

Ren, F. ; Hobson, W. S. ; Lothian, J. R. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 67 (1995), S. 2497-2499

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: A remarkable increase in InGaP etch rate in electron cyclotron resonance BCl3 discharges is observed as the microwave power is increased from 250 W (etch rate ∼500 A(ring)/min) to 1000 W (etch rate ∼8000 A(ring)/min). The surface roughness measured by atomic force microscopy decreases from 36 nm at 250 W to 2 nm at 1000 W. The high ion flux incident on the InGaP at high microwave powers appears to remove InClx species by sputter-assisted desorption and prevents formation of the nonstoichiometric In-rich surfaces generally observed with Cl2-based dry etching using conventional reactive ion etching. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.114437

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