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Passivation of GaAs(111)A surface by Cl termination (1995)

Lu, Z. H. ; Chatenoud, F. ; Dion, M. M. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 67 (1995), S. 670-672

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: It is found that an ordered and air-stable GaAs(111)A–(1×1)–Cl surface can be produced by chemical etching/passivation with dilute HCl solution. The synchrotron polarization-dependent Cl K-edge x-ray absorption near-edge structure and x-ray photoelectron spectroscopy studies showed that the surface is terminated with Ga–Cl bonds oriented along the surface normal. Low-energy electron diffraction studies showed a bulklike (1×1) structure on the Cl-terminated GaAs(111)A surface. The Cl termination eliminates surface band-gap states caused by surface oxides. Photoluminescence measurements showed a dramatic increase in the near-band radiative emission rate corresponding to reduction in the occupied surface band-gap states. A reduction of surface gap states by Cl termination was confirmed by surface photovoltage measurements. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.115198

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