Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
71 (1997), S. 3257-3259
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In the ZnSe/GaAs heterostructure, the problems of interdiffusion and thermal stability are very crucial. We have investigated the effects of annealing on ZnSe grown on GaAs by photoluminescence and double-crystal x-ray measurement. In order to investigate annealing effects of the ZnSe/GaAs heterostructure, we used 1.0-μm-thick and 0.2-μm-thick samples. Samples were annealed in the temperature range of 200–500 °C in an N2 ambient for 3 min using a face-to-face configuration with ZnSe epitaxial layer as a cap layer. In the annealing temperature above 450 °C, new emission peaks appeared in the range of 2.62–2.72 eV. The biaxial compressive strain due to lattice mismatch at the growth temperature is mostly relaxed at 400 °C, and the epilayer annealed at 500 °C has a biaxial tensile strain. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.120307
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