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Excitonic photoluminescence in a shallow quantum well under electric field (1998)

Tignon, J. ; Heller, O. ; Roussignol, Ph. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 72 (1998), S. 1217-1219

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We report a study of electrophotoluminescence in a biased shallow GaAs/AlxGa1−xAs (x=0.04) quantum well. It is shown that photocarriers escape from the well via direct tunneling, resulting in a drastic quenching of the photoluminescence at remarkably low fields (F〈10 kV/cm). We develop a simple method to measure the field-induced escape time from a set of cw photoluminescence, photocurrent, and time-resolved photoluminescence experiments. Comparison with a semiclassical model shows that, in this regime, Coulomb interaction affects significantly the single electron direct tunneling scheme. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.121018

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