ISSN:
1432-0630
Keywords:
73.20.Dx
;
78.55.Cr
;
78.65.Fa
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Hot exciton relaxation is observed in GaAs/Al x Ga1−x As multiple quantum wells. The photolumnescence excitation spectra of the localized exciton emission at low temperatures and excitation densities are composed of narrow equidistant peaks exactly separated by the GaAs LO-phonon energy (36 meV). The relaxation mechanism via LO-phonons is found to be important for localized excitons in multiple quantum wells with GaAs layer thicknesses of about 50 Å, where pronounced alloy fluctuations in the barriers provide a strong additional lateral potential which suppresses the dissociation of hot excitons.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00331669
