Abstract
Hot exciton relaxation is observed in GaAs/Al x Ga1−x As multiple quantum wells. The photolumnescence excitation spectra of the localized exciton emission at low temperatures and excitation densities are composed of narrow equidistant peaks exactly separated by the GaAs LO-phonon energy (36 meV). The relaxation mechanism via LO-phonons is found to be important for localized excitons in multiple quantum wells with GaAs layer thicknesses of about 50 Å, where pronounced alloy fluctuations in the barriers provide a strong additional lateral potential which suppresses the dissociation of hot excitons.
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Ledentsov, N.N., Nötzel, R., Kop'ev, P.S. et al. Barrier-disorder induced exciton relaxation via LO-phonons in GaAs/Al x Ga1−x As multiple quantum wells. Appl. Phys. A 55, 533–536 (1992). https://doi.org/10.1007/BF00331669
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DOI: https://doi.org/10.1007/BF00331669