Publikationsdatum:
2015-08-06
Beschreibung:
Author(s): Georg Schusteritsch, Steven P. Hepplestone, and Chris J. Pickard We present here a first-principles study of the ternary compounds formed by Ni, In, and As, a material of great importance for self-aligned metallic contacts in next-generation InAs-based MOS transistors. The approach we outline is general and can be applied to study the crystal structure and proper… [Phys. Rev. B 92, 054105] Published Wed Aug 05, 2015
Schlagwort(e):
Structure, structural phase transitions, mechanical properties, defects
Print ISSN:
1098-0121
Digitale ISSN:
1095-3795
Thema:
Physik