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  • Articles  (153)
  • 61.70  (153)
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (153)
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  • Articles  (153)
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (153)
  • Physics  (162)
  • 1
    Electronic Resource
    Electronic Resource
    Positron lifetimes and annihilation lineshape in Cd and au from 4.2 K to the melting points (1977)
    Springer
    Applied physics 12 (1977), S. 59-67 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 81
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract By means of an integrated source-specimen technique the temperature dependence of positron lifetimes and annihilation lineshapes has been measured, on the same specimens of gold and cadmium from 4.2K to the melting points, and also in electronirradiated and quenched gold. The anomalous temperature dependence of positron annihilation at intermediate temperatures (200 to 350 K in Cd, 270 to 750 K in Au) discovered by Lichtenberger, Schulte, and MacKenzie is confirmed. The data are incompatible with the idea that the intermediate temperature dependence is due to thermal expansion. They are well explained by an extension of the trapping model which includes the formation of metastable self-trapped positrons. From lineshape measurements after electron irradiation at 180 K and after quenching it is deduced that the trapping rate of positrons at vacancy-type defects in Au is temperature independent below room temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00900069
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  • 2
    Electronic Resource
    Electronic Resource
    Disorders produced during high-current and high-dose phosphorus ion implantation in silicon (1979)
    Springer
    Applied physics 20 (1979), S. 225-229 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Transmission electron microscopy, optical reflection and channeling effect measurements are employed to investigate disorders in 30 keV, high dose (3×1016ions/cm2) and high current (≦5 mA) phosphorus as-implanted silicon with (111), (100), and (110) orientation as a function of temperature rise (100–850°C) by the beam heating effect during implantation. Temperature rise below 400°C results in continuous amorrphous layer formation. This contrasts with results of the recovery into single crystals for temperature rise samples above 500°C, regardless of wafer orientation. Secondary defects (black-dotted defects, dislocation loops and rodlike defects) are formed in singlecrystal recovery samples, having a deeper distribution in (110) wafers and a shallower distribution in (111) and (100) wafers. Rodlike defects observed in 850°C samples are of “vacancy” type and have the largest density in (110) wafers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00886022
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  • 3
    Electronic Resource
    Electronic Resource
    A study of deformation-produced deep levels inn-GaAs using deep level transient capacitance spectroscopy (1980)
    Springer
    Applied physics 21 (1980), S. 257-261 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 71.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Deformation-produced deep levels, both of electron and hole traps, have been studied using deep level transient capacitance spectroscopy (DLTS) for an undopedn-type GaAs (HB grown) compressed at 440°C. Concentrations of two grown-in electron trap levels (E c −0.65eV andE c −0.74eV) and one grown-in hole trap level (E v +∼0.4eV) increase with plastic deformation, while that of a grown-in electron trap level (E c −∼0.3eV) decreases in an early stage of deformation. While no new peak appeared in the electron trap DLTS spectrum after plastic deformation, in the hole trap DLTS spectrum a broad spectrum, seemingly composed of many peaks, newly appeared in a middle temperature range, which may be attributed to electronic energy levels of dislocations with various characters.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00886176
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  • 4
    Electronic Resource
    Electronic Resource
    Pulsed electron-beam annealing of high-dose arsenic implanted silicon (1980)
    Springer
    Applied physics 22 (1980), S. 385-388 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The effects of pulsed electron-beam annealing of high-dose As implanted {111} Si single crystals has been studied. The depth distributions and lattice location of the As atoms were obtained using MeV4He+ backscattering and channeling technique. The implantation energy was 100 keV with a total dose of 3.5·1016/cm2. Above the threshold energy of 0.9 J/cm2 the single-crystal transition was observed with about 95% of the As atoms on substitutional lattice sites. This leads to an As concentration of 2·1021/cm3 which was demonstrated to be a metastable one.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00901061
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  • 5
    Electronic Resource
    Electronic Resource
    Positron trapping in electron-irradiated silicon crystals (1980)
    Springer
    Applied physics 22 (1980), S. 415-419 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 61.60 ; 78.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The positron lifetime in electron-irradiated undoped and doped silicon crystals is studied as a function of temperature between 90 and 300 K. We show that the temperature dependence of the two lifetime components does not arise from the escape, but from the trapping rate at defects. The temperature dependences of the capture cross sections are deduced. It is concluded that in undoped crystals the positrons interact with negatively charged and neutral defects, probably divacancies and vacancy-oxygen complexes, respectively. In strongly P-doped crystals positron trapping occurs preferably in negatively charged centers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00901067
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  • 6
    Electronic Resource
    Electronic Resource
    Trapping of positrons at vacancies in magnesium (1982)
    Springer
    Applied physics 27 (1982), S. 49-56 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 78.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Trapping of positrons at vacancy-type defects in magnesium was studied by positron lifetime and Doppler-broadening measurements. Vacancy defects were produced by quenching, electron irradiation and deformation at low temperatures as well as by thermal agitation at elevated temperatures. In the first three cases we observed trapping at multiple vacancies, which anneal out between 77...400 K. Thermal equilibrium measurements show S-shape behaviour originating from positron trapping at magnesium monovacancies. However, changes in the positron parameters were very small, which is due to the weakness of the positron-vacancy interaction. A detrapping analysis yielded a positron-vacancy binding energy of the order of 0.3...0.4 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01197546
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  • 7
    Electronic Resource
    Electronic Resource
    Positron trapping at grain boundaries (1982)
    Springer
    Applied physics 27 (1982), S. 149-152 
    Details
    ISSN: 1432-0630
    Keywords: 78.70 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A simple model is developed for the trapping of positrons at grain boundaries. It is shown that there is a linear relationship between any linear annihilation parameter and the inverse grain size. An effective grain boundary width is defined, which depends on the positron diffusion length and on the strength of the grain boundary for positrons. The effect of detrapping on this effective width is also considered. The model is tested by using the experimental results available in the literature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616665
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  • 8
    Electronic Resource
    Electronic Resource
    Generation of dislocations introduced by bending stress in a Si wafer (1983)
    Springer
    Applied physics 31 (1983), S. 109-114 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Distribution and morphology for dislocations introduced in (001) Si wafers subjected to bending stress at 800°, 900°, and 1100°C were investigated. For wafers bent around a [110] axis at 900° and 1100°C, straight dislocations appeared along the [110] direction only near the neutral plane, and were absent at the surfaces where bending stress is greatest. However, for wafers bent at 800 °C, such straight dislocations were not formed. Dependence of the dislocation distribution and morphology on heat treatment temperature is explained on the basis of interaction between bending stress and SiO2 precipitates introduced in bulk. Also, it was found that the straight [110] dislocations remained still near the neutral plane, even when additional reverse bending stress was applied around an axis parallel to the dislocations, but were transfered toward the tensile surface by bending around an axis normal to the dislocation direction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616313
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  • 9
    Electronic Resource
    Electronic Resource
    On the temperature dependence of positron lifetimes in tin and the transition from theβ- to theα-phase (1983)
    Springer
    Applied physics 32 (1983), S. 183-185 
    Details
    ISSN: 1432-0630
    Keywords: 78.70 ; 61.70 ; 81
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract For the first time the positron lifetimes in polycrystalline tin have been measured as a function of temperature in the whole range from 80 K to the melting point. The temperature dependence of the mean lifetime could be divided into four regions which can be attributed to the depletion of shallow traps, normal thermal expansion, prevacancy effects, and trapping by vacancies, respectively. In one of the samples the phase transition fromβ- toα-Sn clearly could be detected at 230 K by a sharp increase in the mean lifetime.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00820258
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  • 10
    Electronic Resource
    Electronic Resource
    One-dimensional regular arrays of antiphase domain boundaries in anti-ferroelectric tin-substituted lead zirconate titanate (PZT) Ceramics (1985)
    Springer
    Applied physics 36 (1985), S. 221-227 
    Details
    ISSN: 1432-0630
    Keywords: 61.10 ; 61.70 ; 64 ; 77 ; 81.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The existence of one-dimensional regular arrays of antiphase domain boundaries has been confirmed in tin-substituted PZT ferroelectrics of ABO3 perovskite structure (Pb0.99{[(Zr1−y Sn y )1−x Ti x ]0.98Nb0.02}O3,x=0.03 and 0.04,y=0.20) by means of electron diffraction and lattice imaging. Calculation has been made of the number of satellite spots in the diffraction patterns and their positions determined. They coincide well with the electron diffraction patterns experimentally obtained. The finding proves the relative elongation in one dimension of the ferroelectric unit cell caused by a parallel array of electrical dipoles, as compared to the cell of an anti-parallel array of dipoles.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616557
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