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  • Artikel  (32)
  • 61.80  (32)
  • Springer  (32)
  • 1980-1984  (32)
  • Physik  (32)
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  • 1
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 34 (1984), S. 87-92 
    ISSN: 1432-0649
    Schlagwort(e): 61.70 ; 61.80 ; 71.35 ; 78.55
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract The spectral distribution of the thermoluminescence (TL) of YAG:Nd crystals coloured by x-ray irradiation at room temperature (RT) and at 80 K has been investigated. The spectral distribution of TL in the uv-, visible and near ir ranges shows that the energy transfer by bound exciton states (BES) to the RE3+ ions (Nd3+ and Tb3+) decreases with increasing temperature. The TL spectrum in the uv range is ascribed to the hole defect centers. Diminution of the energy transferred by the BES to the Nd3+ and Tb3+ ions is the direct cause for the occurrence of the group of lines ascribed to the Nd3+ ions in TL observed at LT, whereas at RT and higher only the groups of Tb lines are observed.
    Materialart: Digitale Medien
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  • 2
    ISSN: 1432-0649
    Schlagwort(e): 50 ; 34 ; 32.50 ; 42.60 ; 61.80 ; 62 ; 42.65
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 29 (1982), S. 139-142 
    ISSN: 1432-0649
    Schlagwort(e): 78.60 ; 61.80 ; 82.50
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract A 3-parameter dye laser degradation equation is introduced that has been based upon a theoretical analysis of a laser oscillator. The new equation and the 4-parameter empirical laser degradation equation used previously in this series are further developed to allow calculation of the lifetime of a dye solution for any fraction of laser output degradation. These lifetime equations are shown to be dependent upon the input energy per pulse and the threshold of lasing. The new 3-parameter equation allows the degradation constants to be determined with less change in laser output than did the original 4-parameter empirical expression.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 22 (1980), S. 201-203 
    ISSN: 1432-0630
    Schlagwort(e): 61.80 ; 81.40
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Ge samples implanted with 40 keV Pb at a fluence of 3×1015/cm2 were irradiated with ruby laser single pulses of 15ns duration. Reordering of the damaged layer occurs for energy density irradiation above 0.6 J/cm2. The Pb atoms redistribute with a large component at the sample surface which is easily etched off. The remaining part of Pb impurities is substitutionally located, and the concentration exceeds the solid solubility limit by three order of magnitude. The formation of the metastable solution is explained in terms of a transient liquid layer produced during laser irradiation.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 23 (1980), S. 303-309 
    ISSN: 1432-0630
    Schlagwort(e): 42.80 ; 61.70 ; 61.80 ; 78.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract A significant contribution to the degradation of GaAs-based lasers and light-emitting diodes arises from the formation of so-called dark line defects. It is shown that these defects are accumulations of non-radiative recombination centres around dislocations. The centres are identified as As vacancies, which are emitted by climbing dislocations, concomitantly with the absorption of Ga interstitials. From scanning deep-level transient spectroscopy observations it is concluded that the so-called DX centres are Ga interstitials. The driving force for dislocation climb and thus for dark-line-defect formation is a supersaturation of Ga interstitials originating from the growth of the GaAs crystals under Ga-rich conditions as a consequence of the high volatility of As. Phenomena in other III–V compound semiconductors related to the formation of dark line defects in GaAs are also discussed.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 31 (1983), S. 19-22 
    ISSN: 1432-0630
    Schlagwort(e): 61.40 ; 61.80 ; 85.30 ; 85.60
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The paper deals with the effect ofγ-radiation from a Co60 source on the electronic properties of amorphous silicon field effect transistors. These thin film devices, deposited by the glow discharge technique, are being developed for addressable liquid crystal displays, logic circuits and other applications. 1 Mrad (Si) and 5 Mrad (Si) doses were used and the transistors were held at gate voltages between −8V and +8V during irradiation. Measurements on irradiated specimens showed shifts in threshold voltage of less than 3 V and a change in transconductance below 10%, both of which could be removed by annealing above 130 °C. These results are compared with presently available “radiation hardened” crystalline silicon device structures and it is concluded that in spite of the thicker gate insulation layer (0.3 μm of silicon nitride) of the amorphous devices, the latter are remarkably radiation tolerant, with little degradation in performance. Measurements on irradiatedα-Si films deposited on glass show pronounced conductivity changes, not observed in the transistors. It is suggested that these effects arise at the Si/glass interface, and are prevented by the presence of the silicon nitride film in the devices.
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 32 (1983), S. 95-106 
    ISSN: 1432-0630
    Schlagwort(e): 61.80 ; 78.70 ; 29.70
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract A Monte-Carlo simulation technique based on the screened Rutherford differential cross section for the elastic scattering and Gryzinski's semiempirical expression for the inelastic core and valence electron excitation is used to describe electrons and positrons slowing down in solids. The theoretical results are compared with the experimental backscattering, absorption and transmission results for aluminum, silicon, copper, and gold thin film and semi-infinite targets and good agreement is observed. The simulated stopping profiles are fitted with a simple analytic expression. The profiles are Laplace-transformed to give a useful data base for analyzing phenomena associated with slow positron re-emission from solids.
    Materialart: Digitale Medien
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  • 8
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 26 (1981), S. 243-246 
    ISSN: 1432-0630
    Schlagwort(e): 61.80 ; 42.80 ; 85.30
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract An analytical treatment of the thermal phenomena during free-running ruby laser annealing of boron implanted silicon is presented. The heat equation was solved for a simplified shape of the pulse train consisting of a uniform succession of triangular spikes, identical in energy. During one spike the optical and thermal parameters of the sample were taken constant, but for each new spike, new values of these parameters were calculated taking into account their temperature dependence. Such a model predicts the melting of the top surface before the laser pulse has ended, for energy densities higher than 9×104 J/m2. RHEED confirms the presence of recristallization at about the same value of the laser-pulse energy densities.
    Materialart: Digitale Medien
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  • 9
    ISSN: 1432-0630
    Schlagwort(e): 61.80 ; 72.15 ; 73.60
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The ion-beam mixing of Fe-Al evaporated multiple-layer films has been investigated by measuring continuously the electrical resistivity of the samples during the bombardment. The experimental curves exhibit a tendency toward a saturation process and allow the determination of the critical dose corresponding to the total mixing of the multiple-layer film. The variations of the volume fraction of intermixed atoms as a function of the ion dose have been deduced and a semi-empirical model is proposed to explain the observed kinetics.
    Materialart: Digitale Medien
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  • 10
    ISSN: 1432-0630
    Schlagwort(e): 78.70 ; 61.80
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Positron lifetime measurements have been performed for molybdenum samples containing different densities of voids and dislocation loops. The samples consisted of single crystal molybdenum exposed to 2.7×1018 fast neutrons/cm2 at 60°C, and subsequently annealed at 650°, 725°, 800°, and 875°C in vacuum (p〈10−7 Torr). After each annealing, where the densities of voids and loops were changed, positron lifetime measurements were performed in the temperature interval [−194°, 285°C]. In two-term fits of the measured spectra the longer lifetime, τe2-460 ps corresponds to an intensityI e2 increasing with sample temperature. The shorter lifetime τe1 decreases with increasing temperature. A three-state trapping model with and without detrapping is discussed, and appears to be incapable of explaining the observed temperature dependences. A four-state positron trapping model including detrapping is necessary and satisfactory. It describes positron trapping to voids and trapping to dislocation loops, which is followed by a competition between detrapping and positron transition to jogs or other dislocation-bound defects. Mathematical expressions of the four-state trapping model including detrapping are worked out and calculations of the intensityI e2 are compared with the experimental values ofI e2. By use of special models for the temperature dependence of trapping rates, numerical values can be determined for the positron-dislocation-binding energy and for specific positron trapping rates.
    Materialart: Digitale Medien
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  • 11
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 35 (1984), S. 51-59 
    ISSN: 1432-0630
    Schlagwort(e): 61.80 ; 78.70 ; 29.70
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract An improved Monte-Carlo simulation technique has been used to investigate positron and electron slowing down in solid matter. Elastic scattering is based on exact cross sections of effective crystalline potentials and inelastic processes are described by Gryzinski's semiempirical expression for each core and valence electron excitation. Calculations with normal and oblique angles of incidence have been made for positrons and electrons impinging on semi-infinite aluminium, copper, tungsten, and gold. Interesting differences have been found between positron and electron penetration and backscattering features.
    Materialart: Digitale Medien
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  • 12
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 27 (1982), S. 247-250 
    ISSN: 1432-0630
    Schlagwort(e): 78.70 ; 61.80 ; 71.60
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The positron annihilation technique (P.A.T.) has been used in a study of interactions between gas impurities and crystal defects (vacancy loops and voids) in molybdenum. P.A.T. measurements were found to be very effective for this purpose. We propose that the observed effects are due to decoration of the void surface with nitrogen and vacancy loop decoration with hydrogen and nitrogen.
    Materialart: Digitale Medien
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  • 13
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 35 (1984), S. 99-102 
    ISSN: 1432-0630
    Schlagwort(e): 61.80 ; 34
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The effects of implantation-induced radiation damage on the thermal oxidation of cobalt have been studied. Bombardment by both Co+ self-ions and by Xe+ has been studied as a function of ion dose, energy and annealing temperature. A major increase in oxidation was observed for doses of 〉1016 Co+ cm−2 in agreement with previous studies on Al. The oxidation behaviour as a function of annealing temperature was markedly different for Co+ and Xe+ bombarded samples. For Co+ bombarded samples, damage anneals rapidly in the temperature range 20–300°C due to thermally assisted repair of point defects and vacancy clusters. However, for Xe+ bombardment, it is proposed that the higher annealing temperatures required for damage repair arise due to the stabilisation of three-dimensional vacancy clusters by the oversized Xe atoms. The increase in oxidation after annealing in the temperature range 300–500°C is thought to be due to vacancy release mechanisms which may affect oxide nucleation.
    Materialart: Digitale Medien
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  • 14
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 22 (1980), S. 393-397 
    ISSN: 1432-0630
    Schlagwort(e): 85.30 ; 61.80
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The implantation of nitrogen into silicon to produce Si3N4 layers was investigated to find an alternative to CVD-Si3N4 layers used in ISOPLANAR-and LOCOS-technology. The technological properties of the implanted Si3N4 layers in respect to oxidation inhibition and etching are comparable or superior to CVD-Si3N4 layers. The implanted layers are more resistent against oxidation for nitrogen doses of 2.4×1017 cm−2 at 30keV. The etching behavior is comparable for both types of Si3N4-layers. In the implanted layers no pinholes are found and threre is no formation of a bird's beak, as is well known in the case of CVD-nitride.
    Materialart: Digitale Medien
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  • 15
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 24 (1981), S. 121-126 
    ISSN: 1432-0630
    Schlagwort(e): 61.80 ; 79.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Inelastic energy-loss in a single collisionT e and related stopping cross-sectionT e based on the Firsov model are evaluated for different screening functions in the elastic interaction potentials. Various approximations ofT e andS e for keV-ions in solids are discussed.
    Materialart: Digitale Medien
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  • 16
    ISSN: 1432-0630
    Schlagwort(e): 78.70 ; 61.70 ; 61.80
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The sensitivity of positrons to point defects created by the irradiation of V3Si with neutrons is demonstrated. We found no indication of thermal vacancies by thermal equilibrium measurement up to 1273 K which indicates that the monovacancy formation enthalpy for V3Si isH 1V F ≧(1.84±0.14) eV. Investigations within the range of homogeneity for excess vanadium suppot the idea that substitutional defects are the dominating defect type, whereas for excess silicon a direct confirmation of existing structural vacancies as the dominating defect type is given.
    Materialart: Digitale Medien
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  • 17
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 25 (1981), S. 139-142 
    ISSN: 1432-0630
    Schlagwort(e): 61.80 ; 78.30 ; 85.30
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract High power density electron beams offer new opportunities for studies of epitaxial growth of semiconductor materials. Assuming that the mechanism of epitaxial growth can be understood as a surface melting followed by supercooling regrowth, the heat flow equation has been applied to calculate the temperature reached after an electron beam pulse of power density between 0.5–2 J/cm2. Comparison with laser annealing is made.
    Materialart: Digitale Medien
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  • 18
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 25 (1981), S. 307-310 
    ISSN: 1432-0630
    Schlagwort(e): 79.20 ; 68.55 ; 61.80 ; 34
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Estimates are given for the distribution of the depth of origin of sputtered atoms in the low-fluence limit, as well as the corresponding distribution of atoms sputtered into a given energy interval. The former distribution is well described by an exponential profile, with the characteristic depth being consistent with previous results. The latter distribution is characterized by an energy-dependent depth scale and a shape that varies from exponential at low sputtered-atom energies to inverse-power form at higher energies.
    Materialart: Digitale Medien
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  • 19
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 25 (1981), S. 337-345 
    ISSN: 1432-0630
    Schlagwort(e): 29 ; 34 ; 61.80
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Energy loss profiles for secondary electrons and γ-rays are discussed and the interactions of γ-rays with the activated species within the core of a nuclear track investigated. Based on an electron-hole trapping mechanism experimental values for the activation energies of annealing for nuclear tracks in the range of 0.26 to 0.5 eV have been obtained. These compare favourably with theoretical expectations. The consequences of variations in the detection sensitivities of such detectors are discussed.
    Materialart: Digitale Medien
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  • 20
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 31 (1983), S. 71-74 
    ISSN: 1432-0630
    Schlagwort(e): 42.60 ; 61.80 ; 78.50
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract By annealing Si layers amorphised by ion-implantation with a cw CO2 laser beam in oxygen rich environments, it has been possible to incorporate O atoms into the recrystallized lattice. Absorption measurements on such regrown layers by infrared spectrometry have shown that the impurities are preferentially bonded into substitutional lattice sites, rather than existing interstitially. Supplementary RHEED studies have indicated thatβ-cristobalite, a crystalline form of SiO2, has been formed. These investigations highlight the importance of the ambient during cw laser annealing.
    Materialart: Digitale Medien
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  • 21
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 27 (1982), S. 263-268 
    ISSN: 1432-0630
    Schlagwort(e): 61.80 ; 79.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Energy distributions of H+ and H− backscattered from graphite, stainless steel and molybdenum were measured for low incident beam energies (150∼1500 eV). The energy distributions of H− resembled that of H+, while the intensity ratio of H− to H+ varied from material to material and with the incident proton energy. A peak in the energy distribution moved to the “cutoff” energy with decreasing incident energy, which can be attributed to an increase in nuclear stopping cross section and a decrease in electronic stopping cross section. The ratio of the peak energy to the incident energy is related to the reduced energy ɛ of incident beam independent of target materials in the measured region (0.03〈ɛ〈 3.3).
    Materialart: Digitale Medien
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  • 22
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 30 (1983), S. 83-86 
    ISSN: 1432-0630
    Schlagwort(e): 79.20 ; 61.80
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The temperature dependence of the sputtering yield was measured for lOOkeV per atom bombardment of silver with molecular and atomic antimony ions. No exponential increase of the yield was found in the temperature range from 25° to 775 °C, although a pronounced nonlinear effect is observed when the yield of these projectiles is compared,Y(Sb 2 + )≈ 1.5×[2Y(Sb+)]. We conclude that there is no influence of the lattice temperature on collision spikes.
    Materialart: Digitale Medien
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  • 23
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 30 (1983), S. 161-167 
    ISSN: 1432-0630
    Schlagwort(e): 61.70 ; 61.80 ; 68.55
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract In this paper we want to show by means of Reflection High Energy Electron Diffraction (RHEED) techniques that the recrystallization processes taking place on amorphous germanium films irradiated with low-power superimposed ruby laser pulses occur gradually. Furthermore, in implanted α-Ge films the amorphous-crystalline front moves from the surface of the specimen towards the substrate, while the opposite occurs for glow-discharge deposited films. Moreover, electron microscope observations carried out with a double-stage carbon replica technique at different depths in the specimen show that defect migration is one of the competitive mechanisms in low-power laser annealing.
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  • 24
    ISSN: 1432-0630
    Schlagwort(e): 61.40 ; 61.80 ; 78.70
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Positron lifetime measurements were performed on amorphous Pd80Si20 and Cu50Ti50 alloys irradiated with 3MeV electrons at 20K. The irradiation was found to increase the mean positron lifetime in both specimens indicating the presence of vacancy-like radiation damage. Isochronal annealing between 77 K and 300 K resulted in a continuous reduction of the positron lifetime, which suggests a gradual recovery of the irradiation induced defects.
    Materialart: Digitale Medien
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  • 25
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 29 (1982), S. 219-223 
    ISSN: 1432-0630
    Schlagwort(e): 61.80 ; 71.55 ; 78.70
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Positron annihilation and Hall effect inn-InP crystals as a function of electron irradiation up to 1 · 1019 cm−2 and post-irradiated isochronal annealing up to 550 °C have been studied. It is concluded that in irradiatedn-InP samples positrons interact with negatively charged acceptor-type defect with level atE c −0.33 eV, probablyV In (primary defect). In post-irradiated isochronal annealed (up to 330 °C) samples ofn-InP positron trapping occurs preferably in secondary defects-vacancy clusters, which are formed in the temperature range (150–300 °C). Inn-InP crystals containing radiation induced defects the trapping rate was found to decrease with temperature in the range (300–77) K.
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  • 26
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 35 (1984), S. 249-253 
    ISSN: 1432-0630
    Schlagwort(e): 61.70 ; 61.80 ; 71.35 ; 78.55
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The topograms revealing the anisotropic distribution of defects in the volume of monocrystalline YAG samples have been obtained by the thermoluminescence (TL) technique. It has also been shown that the anisotropic distribution of the lattice defects affects strongly the shape of the TL curves. The greatest changes in the TL intensity were observed in the areas of the samples distributed symmetrically every 120°. It was noted that the selective distribution of the TL intensity is caused mainly by the presence of the (211) facets as well as growth striations formed during the growth process. The groups of lines observed in the TL spectrum have been ascribed to the Tb3+ ions, excited owing to the radiationless energy transfer from the bound exciton states (BES).
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  • 27
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 23 (1980), S. 355-356 
    ISSN: 1432-0630
    Schlagwort(e): 61.80 ; 82.65
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The darkening of soda-lime glass envelopes of low-pressure mercury discharge tubes has nothing to do with the formation of sodium amalgam on the inner surface of the tube. It is, however, connected with the diffusion of mercury ions into the glass of the tube. By applying a high negative voltage to part of the outer surface of a burning tube a sodium depleted region is created at the corresponding part of the inner surface. After removal of the high-voltage electrode and continued normal operation the rate of darkening of the sodium-depleted part of the tube is about 50 times larger than the rate observed for the normal parts of the same tube.
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  • 28
    ISSN: 1432-0630
    Schlagwort(e): 61.80
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Oxygen profiles in silicon implanted with energies between 2 and 20 MeV by means of a Tandem accelerator have been investigated with a microprobe after bevelling the sample surface. It is shown that the measured profiles correspond to the implantation profiles when the microprobe is operated with a well focussed 2 keV electron beam. The projected ion ranges and the profiles thus obtained are compared with theoretical profiles which have been calculated by a Monte Carlo simulation of the stopping procedure. Takingk=1.30k LSS for the electronic stopping coefficient in the LSS region up to 2.55 MeV and a constant value of 162 eV/Å for the electronic stopping at higher energies the calculation yields satisfactory range estimates, whereas the range straggling is systematically too small up to 13% in comparison with the experimental results.
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  • 29
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 31 (1983), S. 147-152 
    ISSN: 1432-0630
    Schlagwort(e): 61.80 ; 85.30 ; 71.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Deep-level transient spectroscopy has been used to investigate the defects remaining in ion implantedp-n junctions in silicon after various pulsed annealing techniques, including ruby and YAG lasers as well as pulsed electron beams (PEBA). The nature and distribution of the various identified levels are discussed for each procedure as a function of various experimental parameters.
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  • 30
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 31 (1983), S. 183-185 
    ISSN: 1432-0630
    Schlagwort(e): 61.80 ; 85.30 ; 71.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The N2, O2, H2O, and CO2 molecules that have condensed on the surface of a pyroelectric tourmaline crystal were degassed successively by means of electron bombardment. The temperature dependence of the electrostatic field strength on the specimen surface was observed by electron diffraction; it decreased as the degassing advanced. The tourmaline surface behaved as a gas Chromatographic adsorbent.
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  • 31
    ISSN: 1432-0630
    Schlagwort(e): 61.70 ; 61.80
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract In (100)p-Si radiation damage was produced by implanting B+ ions with an energy of 80keV, 90keV and 1.6MeV. The specimens were annealed by scanned electronbeam irradiation (20keV, 1–2mAcm−2). The formation, evolution and annihilation of defects during the irradiation process were investigated by employing DLTS and RBS measuring techniques. The results show a minimum of defect concentration and an efficiency of the electrical activation of B higher than 80% at an annealing time of 4.5 s. For irradiation times longer than 5 s it becomes evident, that the crystal surface acts as source of defects and contributes to an increase in defect concentration.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 32
    ISSN: 1432-0630
    Schlagwort(e): 42.60 ; 68.55 ; 61.80
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract New results are reported concerning the vanadium oxidation by cw CO2 laser irradiation in air at atmospheric pressure. Particular emphasis is paid both to the initial stage and the development of the oxidation process under the action of the laser radiation. Some aspects are finally discussed concerning the quantitative theoretical interpretation of the experimentally recorded data.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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