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  • Articles  (24)
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  • Springer  (24)
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  • 1980-1984  (24)
  • 1955-1959
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (24)
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  • Articles  (24)
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  • Springer  (24)
  • Cambridge University Press
  • Taylor & Francis
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (24)
  • Physics  (25)
  • 1
    Electronic Resource
    Electronic Resource
    Hot electron diffusion in CdTe (1983)
    Springer
    Applied physics 30 (1983), S. 189-193 
    Details
    ISSN: 1432-0630
    Keywords: 72 ; 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The parallel and transverse components of diffusion constants of electrons in CdTe have been computed for fields of 30, 40, and 50 kV/cm using the Monte Carlo method. Results are presented for the velocity autocorrelation function and for the ac diffusion constants for two models of energy band structure and scattering constants, used earlier in the literature. The diffusion constants as obtained from the two models are significantly different, but none are in agreement with the available experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620539
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  • 2
    Electronic Resource
    Electronic Resource
    Laser-induced free-carrier absorption in Si single crystal (1984)
    Springer
    Applied physics 33 (1984), S. 107-111 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 79.20 ; 81
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The transmitted energy density in thin single Si crystal, wafers is measured atλ=1.06 μm as a function of the incident energy density for a Nd laser pulse of 30 ns duration. Non-linear effects begin to become important at about 0.3 J/cm2. The contribution due to free-carriers is separated from the interband one by using measurements made at low energy density and at different sample temperatures in the 20°–150 °C range. The time dependence of the free-carrier concentration and of the lattice temperature is computed for different values of the Auger constant. The experimental data in the 0.2–2.5 J/cm2 energy density range are fitted with an Auger constant of 10−30 cm6s−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617616
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  • 3
    Electronic Resource
    Electronic Resource
    On the annealing behaviour of the Staebler-Wronski effect ina-Si:H (1984)
    Springer
    Applied physics 35 (1984), S. 9-12 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The kinetics of the Staebler-Wronski effect ina-Si:H were investigated experimentally. The rate of recovery from the illuminated state B to the annealed state A was observed at various temperatures in undoped,n- andp-dopeda-Si:H. The data can be characterized by a thermally activated relaxation time with an activation energy decreasing with increasing doping concentration. The results are compared with previous data and existing models.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620293
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  • 4
    Electronic Resource
    Electronic Resource
    Dielectric properties of titanium and gadolinium doped MgO single crystals (1982)
    Springer
    Applied physics 29 (1982), S. 29-32 
    Details
    ISSN: 1432-0630
    Keywords: 66 ; 72.20 ; 77.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The dielectric properties of titanium doped magnesium oxide (Ti/MgO) and gadolinium doped magnesium oxide (Gd/MgO) single crystals have been measured at room temperature over the frequency range 500 Hz to 50 kHz. For both the crystals, the dielectric constantɛ′ is found to be independent of frequency and the ac conductivity Re{σae} agrees well with the relation Re{σae}∫Ω n ,Ω being the angular frequency with n=0.84±0.05 for Ti/MgO andn=0.81±0.03 for Gd/MgO. The data fits well with the relationɛ″∫Ω n−1(n〈1),ɛ″ being the dielectric loss factor. An explanation may be found on the basis of the hopping phenomenon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618112
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  • 5
    Electronic Resource
    Electronic Resource
    Dielectric relaxation and AC conduction of an AgTlSe2 semiconductor in the solid and liquid states (1982)
    Springer
    Applied physics 29 (1982), S. 39-44 
    Details
    ISSN: 1432-0630
    Keywords: 77 ; 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Measurements of the dielectric properties of AgTlSe2 in the solid and liquid states were carried out in a wide range of frequencies and temperatures. The material displayed dielectric dispersion, and a loss peak was observed. Cole-Cole diagrams have been used to determine the distribution parameter (a) and the molecular relaxation time (Τ). The process of dielectric relaxation (loss) and ac conduction was attributed to the correlated barrier hopping model suggested by Elliott for amorphous solids, where two carriers simultaneously hop over a barrier between charged defectD + andD − states.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618114
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  • 6
    Electronic Resource
    Electronic Resource
    Electron mobility in compensated VPE GaAs films (1980)
    Springer
    Applied physics 23 (1980), S. 37-40 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 73.60 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Electron Hall mobilities were measured on a series of intentionally compensated vapor phase epitaxy (VPE) GaAs layers. Using Sn and Zn as dopants, compensation ratiosK=(ND+NA)/(ND-NA) as high as 50 were obtained. Already for samples with the lowestK values the 300 K mobilities are higher than the 77 K values. In the range 20〈T〈100 [K] the data may be represented by μ∼T α with α increasing from 0.6 to 1.1 with compensation. The experimental μ values are smaller than those predicted from current models in all cases. It appears that scattering at ionized impurities is the dominant process also at temperatures well above 77 K, and that this scattering process is quantitatively underestimated in current models.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00899568
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of temperature on the validity of the einstein relation in heavily doped semiconductors (1980)
    Springer
    Applied physics 23 (1980), S. 241-244 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An analytical expression of the modified form of the Einstein relation in heavily doped semiconductors in which Gaussian band tails are formed near the lower limit of heavy doping is derived for studying the temperature dependence of the diffusivity-mobility ratio of the carriers in such semiconductors. It is found that, with increasing temperature from relatively low values, the ratio first increases in a nonlinear manner and then decreases till, at high temperatures, it approaches its value corresponding to the non-degenerate condition resulting in a peak over a narrow range of temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00914906
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  • 8
    Electronic Resource
    Electronic Resource
    Arsenic-implanted polysilicon layers (1981)
    Springer
    Applied physics 24 (1981), S. 197-200 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 73 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The diffusion behavior of implanted arsenic in polycrystalline silicon was investigated, using backscattering and electrical measurements. The diffusion coefficient isD=8.5×10−3 exp (−2.74/kT) for polycrystalline silicon deposited on freshly-etched silicon andD=1.66 exp (−3.22/kT) for the deposition on silicon having natural oxide. At the interface to the single-crystalline silicon, a pile-up of arsenic occurs, which depends also on the surface treatment prior to the deposition of the polycrystalline silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00899755
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  • 9
    Electronic Resource
    Electronic Resource
    Oscillatory effective mass in degenerate narrow-gap semiconductors in a quantizing magnetic field (1981)
    Springer
    Applied physics 25 (1981), S. 105-108 
    Details
    ISSN: 1432-0630
    Keywords: 85.30 ; 72.20 ; 72.15
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An attempt is made to study the effect of a quantizing magnetic field on the effective electron mass in degeneraten-type narrow-gap semiconductors at low temperatures. It is found, takingn-Hg1−x Cd x Te as an example, that the effective electron mass shows an oscillatory magnetic-field dependence as is expected because of the dependence of the effective mass in degenerate non-parabolic bands on Fermi energy which oscillates with changing magnetic field. The amplitude of oscillations is, however, found to be significantly influenced by the alloy composition whereas the period is found to be independent of the band non-parabolicity, i.e. of the compositional parameter in ternary semiconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00901280
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  • 10
    Electronic Resource
    Electronic Resource
    On the determination of thermal ionization energy of deep centers from ESR data (1983)
    Springer
    Applied physics 30 (1983), S. 105-107 
    Details
    ISSN: 1432-0630
    Keywords: 76.30 ; 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract It is shown that the skin effect due to thermal generation of free carriers may affect the ESR signal more than deep center depopulation. Experimental results for 0.33 eV deep Eu2+ donor in CdF2 crystals are presented, to show the way in which the thermal energy of deep centers is deduced from the ESR data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00614911
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  • 11
    Electronic Resource
    Electronic Resource
    Electron transport in sub-micron GaAs channels at 300 K (1983)
    Springer
    Applied physics 31 (1983), S. 65-70 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 72.60 ; 85.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Transient velocity-field characteristics have been computed for GaAs channels having lengths of 0.1, 0.2, 0.5, 1, and 20 μm for electric fields between 1 and 50 kV/cm at 300 K. The results are compared with earlier calculations and the significant features of the computed results are discussed. It is found that the electron motion for all channel lengths and for all fields is significantly affected by collisions. The threshold field for negative differential mobility increases, and the magnitude of the differential mobility decreases with decrease in the length of the sample. The maximum steady-state velocity increases with decrease in the length and may be as high as 5.4×107 cm/s for 0.1 μm samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616306
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  • 12
    Electronic Resource
    Electronic Resource
    Thermal annealing and light irradiation effects on hole and electron drift mobilities of Se93.5As6.5 and Se94.3Ge5.7 films (1981)
    Springer
    Applied physics 26 (1981), S. 179-184 
    Details
    ISSN: 1432-0630
    Keywords: 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thermal annealing and light irradiation effects on hole and electron drift mobilities were studied for amorphous Se93.5As6.5 and Se94.3Ge5.7 films by means of a time-of-flight technique. The electron drift mobility and its activation energy show a drastic increase after the heat and light treatments, while the hole drift mobility remains almost unchanged. The change of electron transport is attributed to a relaxation of local structural distortion, which is correlated with relatively shallow localized states. The present experimental results are inconsistent with the prior proposal that electron transport in amorphous selenides is correlated with Se8 ring molecules.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00614754
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  • 13
    Electronic Resource
    Electronic Resource
    Harmonic mixing in a cosine potential for arbitrary damping (1984)
    Springer
    Applied physics 33 (1984), S. 1-7 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 42.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Harmonic mixing of two alternating electric fields due to a Brownian charged particle in a nonlinear one-dimensional potential of cosine shape is investigated. The dynamics of the system are described by a time dependent Fokker-Planck equation. The appropriate distribution function is obtained by a matrix continued fraction expansion method, which is treated numerically. The dc signal due to mixing is computed for strong thermal fluctuations in all relevant parameter ranges of the pinning potential strength, damping and frequency. The dc signal without fluctuations is discussed separately. Resonance effects are shown in the electric dc field and the additional phase shift, caused by intrinsic relaxation processes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01197078
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  • 14
    Electronic Resource
    Electronic Resource
    Hopping and band transport in amorphized semiconductors (1984)
    Springer
    Applied physics 33 (1984), S. 29-35 
    Details
    ISSN: 1432-0630
    Keywords: 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Crystalline samples of Si, GaAs, GaP, InP, and CdTe have been rendered amorphous by bombardment with rare gas ions. DC conductivity and thermopower have been measured as a function of temperature in the interval between 15–500 K. In all cases, electron transport at low temperatures is characterized by non-simply activated processes of the hopping type transport, whereas band transport is observed at higher temperatures. The common and individual features of the different amorphous systems are discussed within the framework of existing transport theories.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01197082
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  • 15
    Electronic Resource
    Electronic Resource
    Electrical conductivity and thermoelectric power of liquid selenium doped with thallium and indium (1982)
    Springer
    Applied physics 27 (1982), S. 161-165 
    Details
    ISSN: 1432-0630
    Keywords: 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The temperature dependence of the electrical conductivity and thermoelectric power of liquid selenium with thallium and indium additives have been studied. Large variations appear in the electrical conductivity and thermoelectric power, where Tl and In additives favourp-type conduction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616667
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  • 16
    Electronic Resource
    Electronic Resource
    Impact ionisation probability in InSb (1982)
    Springer
    Applied physics 29 (1982), S. 125-132 
    Details
    ISSN: 1432-0630
    Keywords: 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An exact analytical expression for the impact ionisation probability for the main ionisation process in a semiconductor with a Kane-type bandstructure is derived. In a parabolic approximation the integrals involved can be evaluated and the result reduces to the simple relationv i (E)=C(E−E i )2Θ(E−E i ) whereC is a material constant related to the transition matrix elements. From experimental results on the photo-quantum efficiency we can estimate the value ofC for InSb near 77 K, i.e.ħC ≈ 0.012 eV−1. It is concluded that the impact ionisation probability cannot be described with a unit step function at the threshold energy as was done in many theories on the avalanche effect. The (effective) threshold is smooth and a more detailed description, as derived here, is necessary.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617768
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  • 17
    Electronic Resource
    Electronic Resource
    Auto-correlation of velocity-fluctuations and frequency-dependent diffusion constant for hot electrons (1981)
    Springer
    Applied physics 26 (1981), S. 131-138 
    Details
    ISSN: 1432-0630
    Keywords: 72 ; 72.20 ; 72.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A method has been developed for determining the auto-correlation functions of the fluctuations in the transverse and the parallel components of hot carrier-velocity in a semiconductor by Monte Carlo simulation. The functions for electrons in InSb are determined by this method for applied electric fields of 50 V/cm, 75 V/cm, and 100 V/cm. With increasing value of the time interval the transverse auto-correlation function falls nearly exponentially to zero, but the parallel function falls sharply to a negative peak, then rises to positive values and finally becomes zero. The interval beyond which the auto-correlation function is zero and the correlation time are also evaluated. The correlation time is found to be approximately 1.6 times the relaxation time calculated from the chord mobility. The effect of the flight sampling time on the value of variance of the displacement, is investigated in terms of the low frequency diffusion constants, determined from the variation of the correlation functions. It is found that the diffusion constants become independent of the sampling time if it is of the order of one hundred times the relaxation time. The frequency-dependent diffusion constants are calculated from the correlation functions. The transverse diffusion constant falls monotonically with frequency for all the field strengths studied. The parallel diffusion constant has similar variation for the lower fields (50 V/cm and 75 V/cm) but it has a peak at about 44 GHz for the field of 100 V/cm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616660
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  • 18
    Electronic Resource
    Electronic Resource
    Thresholds for impact ionisation in InSb at 77K (1981)
    Springer
    Applied physics 26 (1981), S. 157-163 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 72.40 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The thresholds in energy for 5 different impact ionisation processes in InSb at 77K were calculated on the basis of a critical review of the available bandstructure data for largerk values. An accurate threshold value of 243 meV ± a few meV is given for the main process. It is shown that production of light holes by impact ionisation is highly improbable. It is suggested that double ionisation and light hole initiated ionisation may be equally important in interpreting quantum efficiency data. Impact ionisation by L-band electrons may contribute significantly to the avalanche in Gunn domains, explaining the rapid quenching of the latter.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00614750
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  • 19
    Electronic Resource
    Electronic Resource
    Electrical properties of CuTlSe2 in the liquid state (1981)
    Springer
    Applied physics 26 (1981), S. 171-173 
    Details
    ISSN: 1432-0630
    Keywords: 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electrical conductivity and thermoelectric power of CuTlSe2 have been investigated as a function of temperature up to 230 °C above its melting point. In the liquid state the experimental data are analyzed in terms of a model developed for the density of states and electrical transport in solid amorphous semiconductors (Mott, 1970). Positive thermoelectric power suggests a large predominance of holes in electrical conduction. It appears that the conduction is due to holes in extended states near the band edge. It is found that the energy gap has a large temperature coefficient γ=5.5×10−4eV/K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00614752
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  • 20
    Electronic Resource
    Electronic Resource
    High-field transport properties of In0.765Ga0.235As0.5P0.5 (1983)
    Springer
    Applied physics 32 (1983), S. 39-43 
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    ISSN: 1432-0630
    Keywords: 72 ; 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Monte-Carlo results on the velocity-field characteristics, ac diffusion-constant and thermal-noise voltages are presented for In0.765Ga0.235As0.5P0.5 at 300K. Recently available values of physical constants have been used in the calculations. The values of diffusion constants are close to those of InP but the thermal noise voltages are found to increase faster with the field. The peak velocity is 1.9 × 107 cm/s and the threshold field for negative differential mobility is about 6 kV/cm.
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    URL: http://dx.doi.org/10.1007/BF00626132
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  • 21
    Electronic Resource
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    Impact ionisation inn-Type InSb at 77 K (1983)
    Springer
    Applied physics 30 (1983), S. 151-160 
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    ISSN: 1432-0630
    Keywords: 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Time dependent generation rate measurements for InSb at 77 K are presented. The direct results are corrected for recombination terms and care is taken to avoid complications due to the pinch effect under avalanche conditions. The results are compared with various theories, and it is shown that an improved version of Dumke's avalanche theory yields a very good description. A simple extension to Shockley's lucky electron theory is presented which also gives good results. It is concluded that only the most energetic electrons, with energies near the threshold energy, contribute significantly to the avalanche process.
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    URL: http://dx.doi.org/10.1007/BF00620534
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  • 22
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    High electric-field hall effect measurements onn-type InSb at 77 K (1982)
    Springer
    Applied physics 27 (1982), S. 107-120 
    Details
    ISSN: 1432-0630
    Keywords: 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Pulsed Hall-effect experiments onn-type InSb at 77 K, with nanosecond time resolution, at magnetic inductions down to 2 mT and for electric field strengths up into the avalanche regime are reported. Results on mobility are compared with previous experimental data and various theoretical calculations. For the first time also results on the scattering factor as a function of electric field are given. A curious time dependent behaviour of the transverse voltage under avalanche conditions is reported. Along with the development of the avalanche the transverse voltage decreases and may even change sign. This phenomenon is qualitatively explained in terms of the magnetoconcentration effect and the change of contact properties under avalanche conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615813
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  • 23
    Electronic Resource
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    A SOGICON type instability in silicon (1984)
    Springer
    Applied physics 35 (1984), S. 145-148 
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    ISSN: 1432-0630
    Keywords: 85.30 ; 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A current oscillation phenomenon in SOGICON type Si device fabricated by the use of a planar process is studied. The oscillation is generated in the region between anode and notch which is located at the center on the sample. A considerably high electric field is observed in the notch region. Considering the hot-electron effect due to the high electric field, the mechanism underlying the current oscillation is discussed.
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    URL: http://dx.doi.org/10.1007/BF00616967
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  • 24
    Electronic Resource
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    Electrical properties of the AgTlSe2 semiconductor in the liquid state (1982)
    Springer
    Applied physics 28 (1982), S. 109-111 
    Details
    ISSN: 1432-0630
    Keywords: 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electrical conductivity and thermoelectric power of AgTlSe2 have been investigated as a function of temperature from 390° C up to 590° C. The experimental data are analyzed in terms of a model developed for the density of states and electrical transport in solid amorphous semiconductors [12]. Positive thermoelectric power suggests a large predominance of holes in electrical conduction. It appears that the conduction is due to holes in localized states near the band edge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617139
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