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  • 1
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 43 (1987), S. 205-208 
    ISSN: 1432-0630
    Schlagwort(e): 72.40 ; 72.20 ; 85.30
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract A transient negative photoconductivity phenomenon observed in silicon doped with gold atoms by an appropriate diffusion condition has been investigated. The transient negative photoconductivity could be observed with a diode doped with gold atoms under intrinsic light-pulse illumination. In the recovery process of the transient negative photoconductivity to a steady-state dark level, two kind of time constants were observed, which may be related with the emission of electrons from gold level. A dependence of the magnitude of the peak value on the ambient temperature was observed; a qualitative explanation is given.
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 37 (1985), S. 165-170 
    ISSN: 1432-0630
    Schlagwort(e): 71 ; 72.20 ; 78
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract In thermally stimulated processes the calculation of the transition probability of a trapped charge carrier into an excited state is based on an atomistic model involving multiphonon processes. The displacement of lattice particles from equilibrium positions gives rise to electron-lattice interaction. As a result the temperature dependence is found to be of non-Arrhenius type except in some limiting cases. The difference of the probabilities for non-radiative transitions, as calculated by the quantum mechanical and by semi-classical methods, is discussed. Thermoluminescence proves to be an example for a non-radiative transition controlled phenomenon and the calculated glow curve differs appreciably from one model to the other. As a result the glow curves calculated in the quantum mechanical concept exhibit shapes which are broadened and shifted to lower temperatures, as compared to that calculated in the semi-classical concept. In turn, the activation energy, as determined by the initial rise method or the method of heating rate variation, is found to be much smaller in the quantum mechanical case.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 37 (1985), S. 243-246 
    ISSN: 1432-0630
    Schlagwort(e): 68.20 ; 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract A new possibility for using vacuum-evaporated CdS thin films in combination with a suitable organic polymer (e.g., polyethylene) in electrophotography is described. The advantages of a multi-layer type sample are discussed in terms of deep bulk trapping of the photogenerated free carriers, injected in the polymer. A formula is derived, which links the initial rate of surface potential decay with the trapping range in unit fieldμ 0τ. Using it and the data for the initial rates of surface potential decay of two samples (a double-layer and a multi-layer one), the trapping range for the vacuum-evaporated polyethylene films is determined.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 41 (1986), S. 197-199 
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 72.70
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The noise current spectral density in submicrometer samples is computed using the Monte Carlo method. The normalized spectral density is found to decrease with sample length and increase with the field. The high-field noise is like shot noise and increases with current in agreement with experimental results.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 42 (1987), S. 41-43 
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 85.30
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The instability of the electron-hole plasma produced by continuous photoexcitation in short semiconductor structures is investigated theoretically. The applied electric field is considerably disturbed by photogenerated charge carriers. At a sufficiently intensive photogeneration plasma instability occurs. The frequency of current oscillations due to the instability, as shown by numerical simulation for a GaAs structure, is in the range of 1011–1012s−1.
    Materialart: Digitale Medien
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  • 6
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 73.60
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Measurements of the Hall coefficients and of the resistivity of MBE-grown Si, doped with P, As, Sb, B, and Ga in the concentration range 1014 to 1020 cm−3, were carried out at 77 K and at 300 K. With the exception of Ga-doped Si, the measured mobilities were close to or higher than those of bulk materials at both temperatures. The Mott metal/non-metal transition has been observed in the present epitaxial materials and the measured values for the critical impurity concentration at which the transition occurs, agree with values reported by other workers for bulk silicon.
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 45 (1988), S. 77-81 
    ISSN: 1432-0630
    Schlagwort(e): 73.60
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The thermally induced electrical activation of boron implanted in silicon at fluences ≦1013 cm−2 was studied by the combination of secondary ion mass spectrometry (SIMS) and pulsed capacitance voltage (PCV). After annealing at 900°C for 30 min boron is completely ionized and the contribution of electrically active defects to the electrical profile is negligible. For partly annealed samples (T〈900°C) the degree of electrical activation of boron decreases with increasing boron concentration due to the presence of residual defects. The experimental data can be described qualitatively by the first-order kinetics if the influence of residual crystal defects on the electrical activation is considered.
    Materialart: Digitale Medien
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  • 8
    ISSN: 1432-0630
    Schlagwort(e): 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The nonlinearI – V behaviour and threshold switching of the bulk Se-Te-Sn system have been experimentally studied at various temperatures. It is observed that the curves are linear for low voltages and become superlinear at higher voltages. After a certain voltageV th, the current through the material shoots to a very high value and the potential across the material drops to a low value. It is also found that there is a decrease in Vh with increase in percentage of tin and temperature. An attempt is made to explain the nonlinearI – V behaviour and threshold switching on the basis of a microcrystallite model. A study of Se-Te-Sn system reveals that our results are in concurrence with the theoretical predictions.
    Materialart: Digitale Medien
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  • 9
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 48 (1989), S. 295-304 
    ISSN: 1432-0630
    Schlagwort(e): 61.40 ; 73.60 ; 78.30
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract A series of experimental studies has been made on the relationship between optical and structural properties of hydrogenated amorphous silicon (a-Si:H) prepared under various conditions. It has been clarified by analysing the results that the shape of the energy spectrum near the band edge and the distribution of the valence-band tail states depend primarily on the structural disorder of the Si network in a-Si:H. On the other hand, the total content and the bonding mode of bonded hydrogen have little effects on these electronic properties of a-Si:H. It has also been found that the distribution of the valenceband tail states might be related to other unidentified factor(s) besides the structural disorder. The present results have been compared with those of the previous experimental and theoretical studies.
    Materialart: Digitale Medien
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  • 10
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 78.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The effect of annealing on the electrical properties and the refractive index of red mercuric iodide (HgI2) single crystals is investigated. The ac-impedance and phase angle were measured in the frequency range from 100 Hz to 10 kHz at different annealing temperatures. The ac-conductivity, dielectric constants, loss tangent and the refractive index as a function of frequency are determined. The results are discussed in terms of structural changes taking place as a result of the heat treatment of the HgI2 single crystals.
    Materialart: Digitale Medien
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  • 11
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 72.80 ; 78.65
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Fine-grained (d≈0.1 μm), polycrytalline SiC films were prepared on top of insulating and optically transparent sapphire substrates by means of a thermal crystallization technique. Optical absorption measurements indicate that the individual SiC grains consist of relatively defect-free β-SiC surrounded by high-defect density grain-boundary material. Nominally undoped material exhibits a low de conductivity (δ≈10−8 Ω−1 cm−1) in the dark and an efficient photoconductivity apon illumination with short-wavelength UV light. The temperature dependence of the de transport exhibits a quasi-Arrhenius-type behaviour with average activation energies of the order to 0.6 eV. A characteristic feature of this kind of transport is a continuous increase in activation energy with increasing film temperature. Upon doping with N, P and Al ions, the average activation energy is decreased and room temperature conductivities of the order of 0.1 Ω−1 cm−1 are reached. Doping with B ions, on the other hand, only leads to high-resistivity material. It is shown that the electronic transport in doped SiC-On-Sapphire (SiCOS) films can be successfully modelled in terms of a grain-boundary-dominated conduction process. In this process thermal activation across potential barriers at the grain-boundary surfaces competes with funneling through these same barriers.
    Materialart: Digitale Medien
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  • 12
    ISSN: 1432-0630
    Schlagwort(e): 73.60 ; 72.20 ; 61.40
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The effect of In content on do electrical conductivity and DTA of the system (As2Se3)1-x. Inx, x=0, 0.01, 0.05, has been studied. The electrical energy gap was found to increase for an In content 0.01% and decrease for an In content 0.05%. The samples exhibit the three conduction mechanisms proposed by Mott and Davis. The activation energy was calculated for each mechanism. The effect of heating rate on the transition temperatures (T g,T c,T m) was studied and the variation of the crystallization-peak position was used to calculate the activation energy and the order of the crystallization process.
    Materialart: Digitale Medien
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  • 13
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 81.40
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract A method has been developed for determining the effective concentration of shallow impuritiesN * reponsible for the low-temperature conductivity in the vicinity of the metal-insulator transition for inhomogeneous samples of n-Ge:As. The method is based on the measurement of two ratios of sample resistance γ-R(4.2 K)/R(300 K), β=R(2.0 K)/R(4.2 K) and the conductivity σ(4.2 K). The next step consists of plotting and σ(4.2) vs β. Assuming that β is the most reliable parameter, one can calculate, after an averaging procedare, the corrected values ofγ *,π *(4.2) and the resistivity at room temperatureρ *(300)=[γ * π *(4.2)]−1. Finally, using the known dependence ρ(300)=f(N) for homogeneous samples, one can obtain the values ofN *. The dependences ofN * on β and on γ are plotted. The scaling behavior of the conductivity of the Ge:As samples with corrected values ofπ *(4.2) andN * has been observed down toT=100 mK.
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  • 14
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 61 (1995), S. 587-590 
    ISSN: 1432-0630
    Schlagwort(e): 73.60
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Thin Pd films of 5–50nm thickness are deposited on glass substrates under UHV conditions and are subsequently covered step by step with CO at 77 or 293 K. The resistivity increases linearly with the number of adsorbed CO molecules in the initial stages of adsorption while a saturation value develops at higher coverages. The thickness dependence of the linear increase can be quantitatively interpreted with the help of the scattering hypothesis. The scattering cross section is calculated to beA=1.6Å2 in good agreement with the experimental evidence.
    Materialart: Digitale Medien
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  • 15
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 62 (1996), S. 155-162 
    ISSN: 1432-0630
    Schlagwort(e): 68.55 ; 73.60 ; 78.65
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Buried layers of (Fe1 −x Co x )Si2 were prepared by sequent implantation of iron and cobalt into (100) silicon. The depth distributions of iron and cobalt and the atomic concentration ratio silicon/metal were determined by Auger Electron Spectroscopy (AES) and Rutherford Backscattering Spectrometry (RBS). The phase composition and the microstructure of the silicide layer were studied by X-ray diffraction and electron microscopy. The band gap energy was evaluated from Infrared (IR) reflection and transmission experiments. The semiconductingβ-FeSi2 structure remains stable up to a cobalt fraction ofx = 0.2 if the iron silicide is stabilized by an intermediate annealing between iron and cobalt implantation. With increasing cobalt content, the electrical resistivity as well as the energy of the direct band gap of the (Fe1 −x Co x )Si2 layer decrease. In this way, a band gap tuning between 0.84 and 0.70 eV is possible. The gap energy is found to vary quadratically with the Co content in the composition range 0 〈x 〈 0.15.
    Materialart: Digitale Medien
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  • 16
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 37 (1985), S. 153-164 
    ISSN: 1432-0630
    Schlagwort(e): 86.30 ; 72.40 ; 73.60
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract We have made theoretical studies on the trapping and recombination of photogenerated carriers in hydrogenated amorphous silicon (a-Si∶H) p-i-n solar cells. We discuss in detail the following points: 1) The limitations of the assumptions in the previous analysis. It has been clarified that the single-level Shockley-Read-Hall model for carrier recombination and the treatment of trap occupation in terms of quasi-Fermi levels are inadequate for exact analysis. 2) The superlinear dependence of carrier recombination rate on the free-carrier density which can explain the enhancement of photo-induced changes ina-Si∶H under high intensity light. 3) The estimation of capture cross section of the tail states ina-Si∶H. We show that the charged and neutral tail states have rather small capture cross sections of less than 10−16 cm2 and of less than 10−19 cm2, respectively. 4) The effect of the recombination of photogenerated (PG) carriers at the p/i and the n/i interfaces. We estimate the recombination velocityS of PG carriers at these interfaces to be about 103 cm/s. It has been also clarified that the decrease inS is effective to improve the cell performance, especially the open circuit voltage.
    Materialart: Digitale Medien
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  • 17
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 38 (1985), S. 57-58 
    ISSN: 1432-0630
    Schlagwort(e): 72 ; 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The Monte Carlo method has been applied to obtain the average electron velocity at different positions of a submicrometer GaAs channel in the presence of a position independent electric field. Velocity-distance curves are presented for channel lengths of 0.1, 0.2, and 0.5 μm and for lattice temperatures of 300 and 77 K. The curves show significant effects of collisions and boundary conditions.
    Materialart: Digitale Medien
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  • 18
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 41 (1986), S. 127-135 
    ISSN: 1432-0630
    Schlagwort(e): 61.80 ; 72.15 ; 73.60
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Atomic mixing of Fe/Al bilayered samples induced by an energetic xenon beam has been studied by RBS-TEM and sheet resistivity measurements. Mixing is detected at 2.5 × 1015 Xe/cm2 and then proceeds up to 2 × 1016 Xe/cm2. A blocking effect of the mixing for larger doses is observed. Homogeneous concentration is not obtained across the sample. Instead a pronounced graded composition is reached. Several explanations of the mixing process and the subsequent blocking effect are suggested: — sharp gradients in the nuclear energy deposition profile which decrease with dose — grain growth phenomena — precipitation of crystalline xenon acting as efficient annihilation sinks for vacancies.
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  • 19
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 42 (1987), S. 87-90 
    ISSN: 1432-0630
    Schlagwort(e): 73.60
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The resistivity increase of very thin metal films during gas adsorption is stronger than predicted by the commond −1 law. This effect is contributed to surface roughness. A quantitative theory is presented which leads to an additionald −3 term. The theory is checked using literature data obtained for the Ag/O2 system.
    Materialart: Digitale Medien
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  • 20
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 44 (1987), S. 123-130 
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 61.70
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Photopyroelectric spectroscopy (P2ES) of n-CdS single crystals was performed at an open circuit, and in conjunction with photocurrent spectroscopy (PCS) in the presence of an applied ac or dc transverse field. The results showed that P2ES is very sensitive to the presence of deliberately introduced subbandgap defect structures, with the P2E signal dominated by non-radiative de-excitation mechanisms at defect centers. The potential of this technique as a powerful electronic defect diagnostic tool, combined with the overall experimental simplicity, was demonstrated with mm-thick crystals used as received in an open-cell geometry.
    Materialart: Digitale Medien
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  • 21
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 43 (1987), S. 93-95 
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 73.60 ; 41
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Non-uniform planar resistors are modelled by a small stochastic conductivity pattern superimposed on the constant mean conductivity. At first a theoretical analysis is presented giving the mean square deviation of the resistor current for a given applied voltage. The same problem is then simulated by Monte-Carlo experiments and a good agreement is observed.
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  • 22
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 45 (1988), S. 233-244 
    ISSN: 1432-0630
    Schlagwort(e): 68.55 ; 68.65 ; 73.60
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract In addition to the realization of atomically abrupt interfaces in III–V semiconductors by molecular beam epitaxy, the confinement of donor and acceptor impurities to an atomic plane normal to the crystal growth direction, calledδ-doping, is important for the fabrication of artifically layered semiconductor structures. The implementation ofδ-function-like doping profiles by using Si donors and Be acceptors generates V-shaped potential wells in GaAs and AlxGa1−xAs with a quasi-two-dimensional (2D) electron (or hole) gas. In this review we define three areas of fundamental and device aspects associated withδ-doping. (i) The prototype structure ofδ-doping formed by a single atomic plane of Si donors in GaAs allows to study the 2D electron gas by magnetotransport and tunneling experiments, to study the metal-insulator transition, and to study central-cell and multivalley effects. In addition, non-alloyed ohmic contacts to GaAs and GaAs field-effect transistors (δ-FETs) with a buried 2D channel of high carrier density can be fabricated fromδ-doped material. (ii) GaAs sawtooth doping superlattices, consisting of a periodic sequence of alternating n- and p-typeδ-doping layers equally spaced by undoped regions, emit light of high intensity at wavelengths of 0.9 〈λ 〈1.2 [μm], which is attractive for application in photonic devices. The observed carrier transport normal to the layers due to tunneling indicates the feasibility of this superlattice as effective-mass filter. (iii) The confinement of donors (or acceptors) to an atomic (001) plane in selectively doped AlxGa1−xAs/GaAs heterostructures leads to very high mobilities, to high 2D carrier densities, and to a reduction of the undesired persistent photo-conductivity. Theseδ-doped heterostructures are thus important for application in transistors with improved current driving capabilities.
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  • 23
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 46 (1988), S. 249-253 
    ISSN: 1432-0630
    Schlagwort(e): 68.55 ; 73.60 ; 77.55
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The low-temperature fabrication of silicon nitride films by ArF excimer laser irradiation has been studied. Two fabrication methods are presented. One is photo-enhanced direct nitridation of a silicon surface with NH3 for very thin gate insulators, and the other is photo-enhanced deposition of silicon nitride films with Si2H6 and NH3 gases for stable passivation films. The ArF excimer laser irradiation dissociates the NH3 gas producing NH and NH2 radicals which proved effective in instigating the nitridation reaction. The quality of both films has been much improved and the growth temperature has been lowered by using laser irradiation. These photo-enhanced processes seem to be promising ULSI techniques because they do not depend on high temperatures and are free from possible reactor contamination.
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  • 24
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 48 (1989), S. 245-249 
    ISSN: 1432-0630
    Schlagwort(e): 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Semiconductor response to ultrafast electric pulses was investigated both theoretically and experimentally. The possibilities for hot-electron drift velocity estimation from a pulsed electric conductivity measurement were analysed. An optoelectronic arrangement with time resolution of 20 ps was used to perform such measurements on then-InSb andn-InAs single crystals. Negative differential mobility (n.d.m.) was observed in both semiconductors at high electric fields.
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  • 25
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 49 (1989), S. 165-169 
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 72.40 ; 73.60
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract This paper is concerned with the optimization of growth conditions for a-Si1-x Ge x :H alloys. It is shown that H-dilution of source gases selectively improves the band transport of electrons without significantly affecting the recombination center density or the band transport of holes. It is further shown that the beneficial effects of H-dilution are most pronounced in alloys with comparable densities of Si and Ge.
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  • 26
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 72.40 ; 72.80J ; 77.40
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract ac measurements (1 Hz–10 kHz) have been carried out on a Pb2CrO5 ceramic sample (with surface electrodes) at room temperature as a function of voltage and intensity of visible light illuminating the sample. Cole-Cole complex impedance plots show that the electrical behaviour of Pb2CrO5 is strongly modified when the sample is illuminated. The bulk conductance of the sample is found to increase with increasing light intensity indicating that this dielectric material becomes semiconducting due to the photogeneration of free charge carriers in the conduction band. The dielectric constant of the sample is enhanced by illumination probably due to light-dependent space charge effects in a manner where the dielectric's relaxation time (τ=RC=0.7 ms) remains constant with light intensity. On the other hand, both the bulk conductance and geometrical capacitance of the sample have been found to be almost independent of the applied voltage.
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  • 27
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 60 (1995), S. 87-91 
    ISSN: 1432-0630
    Schlagwort(e): 61.10 ; 61.70 ; 73.60
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Antimony thin films were vacuum deposited on glass substrates at room temperature. X-ray structural studies were performed. The thickness dependence of both the de electrical resistivity and the Hall coefficient were earried out at room temperature over a thickness range from 29 nm to 216 nm. The type of conduction, the concentration and the mobility of charge carriers were revealed. Analysis incorporating the electrical resistivity and the Hall effect data has led to the determination of the specular and non-specular size-effect parameters. Parameters such as the bulk resistivity (ϱ 0), bulk mean free path (λ 0), grain-boundary transmission coefficient (t), external surface parameters (U), surface scattering factor (p) and grain-boundary parameter (V), were all evaluated without using any adjusting parameters. Beside the background contribution to the film resistivity, an estimation of the contribution of the surface and grain-boundary to the film resistivity was also carried out.
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  • 28
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 60 (1995), S. 217-225 
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 72.40 ; 78.30
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract We report on a detailed investigation (EPR, SHG, optical absorption, luminescence and Raman scattering) on the new damage-resistant impurity indium in LiNbO3, where the increased photoconductivity strongly reduces the photorefractive effect. EPR and optical absorption measurements point to a complete disappearance of the Nb antisite in LiNbO3: In for all In concentrations. We believe that the very effective driving out of Nb antisites by In is due to the trivalent charge state of In and the possibility of charge self-compensation. Similarities in the properties of Mg-, Zn- or Indoped samples are discussed. Simultaneous doping with In and Zn leads to an addition of both contributions, in particular for optical frequency doubling and luminescence. Raman studies prove that In does not improve the stoichiometry of the crystals. Indium doping provides the possibility to control simultaneously phase-matching conditions and to reduce drastically photorefraction. Therefore, In co-doped LiNbO3 compositions are promising materials for applications after solving contemporary growth problems.
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  • 29
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 61 (1995), S. 389-395 
    ISSN: 1432-0630
    Schlagwort(e): 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The Hall mobility of undoped n-type conducting SrTiO3 single crystals was investigated in a temperature range between 19 and 1373 K. Field calculations were used to estimate the influence of sample shape and electrode geometry on the measured values. Between 19 and 353 K samples, which were quenched under reducing conditions, show an impurity scattering behavior at low temperature and high carrier concentrations and a phonon scattering mechanism at room temperature. In this temperature region, no carrier-density-dependent mobility was found. In conjunction with measurements of the mass difference before and after reoxidation, the oxygen deficiency and the oxygen vacancy concentration could be determined. The oxygen vacancies proved to be singly ionized. Above 873 K, Hall mobility and carrier concentration had been determined as a function of both oxygen partial pressure and temperature for the first time. In this temperature range the mobility does not depend on carrier concentration, but shows aT −1.5 dependence.
    Materialart: Digitale Medien
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  • 30
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 63 (1996), S. 13-17 
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 72.60 ; 81.60.Jw
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The results for the ablation of polymers by High-Intensity Pulsed Ion Beams (HIPIB) as well as by laser pulses of different wavelengths and pulse widths are discussed. A thermal model is proposed that reproduces all available experimental data. An Arrhenius type relation is assumed for the ablation velocityw(T) =w 0 exp (−T 1/T). Once the two parametersw 0 andT 1 are known for a certain polymer the model allows one to predict the ablation rate as a function of laser wavelength, fluence, and pulse width and for HIPIB pulses.
    Materialart: Digitale Medien
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  • 31
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 36 (1985), S. 183-187 
    ISSN: 1432-0630
    Schlagwort(e): 02 ; 72.20 ; 72.70
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract General formulae are derived to calculate the noise generated by a resistor of arbitrary shape. Contact and bulk noise have been taken into account. By calculating a particular example it will be shown that the influence of the contact and bulk noise can be changed by varying the resistor's shape.
    Materialart: Digitale Medien
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  • 32
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 43 (1987), S. 47-52 
    ISSN: 1432-0630
    Schlagwort(e): 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Cadmium telluride crystals grown by the Travelling Heater Method (THM) technique have been implanted with hydrogen using protons from 2 keV to 3 MeV. Electrical measurements indicate drastic changes in the concentration of defects, especially in the 0.15–0.20 and 0.45–0.60 eV bands. However, the modification induced by hydrogen depends on the starting material, implantation and annealing conditions. Furthermore, resistivity and carrier lifetime are also strongly affected by this treatment.
    Materialart: Digitale Medien
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  • 33
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 41 (1986), S. 275-283 
    ISSN: 1432-0630
    Schlagwort(e): 85.30 ; 86.30 ; 73.60
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The electrical properties and the degradation behavior of hydrogenated amorphous silicon alloys (a-Si1−x A x : H, with A=C, Ge, B, P) in designs of pin, pip, nin, and MOS structures are investigated by measuring the dark and light I(V) characteristics and the spectral response as well as the space-charge-limited current (SCLC), the time of flight (TOF) of carriers and the field effect (FE). These investigations give an overview of our recent work combined with new results emphasizing the physics of the a-Si:H pin solar cells. We discuss the stabilizing influence on the degradation behavior achieved by profiling the i layers of the pin solar cells with P and B. Two kinds of pin solar cells, namely glass/SnO2/p(C)in/metal and glass/metal/pin/ITO, are investigated and an explanation of their different spectral response behavior is given. SCLC measurements lead to the conclusion that trapping is also involved in the degradation mechanism, as is recombination. TOF experiments on a-Si1−x Ge x : H pin diodes indicate that the incorporation of Ge widens the tail-state distribution below the conduction band. FE measurements showed densities of gap states of about 5×l016cm−3eV−1.
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  • 34
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 72.80J ; 70.90
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract An ac impedance method has been used to study the electrical properties of an illuminated HgI2 crystal as a function of temperature [10–350 K] and frequency [1–104 Hz]. The complex impedance plane plots enabled us to determine the bulk resistance of the crystal as a function of temperature. Activation energies of [0.08±0.005 eV] and [0.25 ±0.01eV] are then found; they are attributed to acceptor and donor trapping levels, respectively. At temperatures lower than 230 K, a weak temperature dependence of the bulk resistance is observed. This weak dependence is supposed to be due to photoconductivity.
    Materialart: Digitale Medien
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  • 35
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 36 (1985), S. 63-65 
    ISSN: 1432-0630
    Schlagwort(e): 66 ; 72.20 ; 77.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The dielectric properties of titanium-doped magnesium oxide (Ti/MgO) and nickel-doped magnesium oxide (Ni/MgO) single crystals have been measured in the range of temperature from 300 to 450 K at the microwave frequency of 9.31 GHz. For both crystals the dielectric properties are found similar. From the conductivity data, the activation energy in the measured temperature region has been estimated to be 0.15 eV. The values of the temperature dependence (ε′−1)−1(ε′+2)−1 (∂ε′/∂T) p have been calculated. The data confirms the Bosmann and Havinga postulate that, for materials in which the dielectric constant;ε′ is less than 20 the temperature dependence should be positive.
    Materialart: Digitale Medien
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  • 36
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 36 (1985), S. 147-151 
    ISSN: 1432-0630
    Schlagwort(e): 68.55 ; 73.60
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract H2S gas has been used during molecular beam epitaxy (MBE) growth of GaAs and Al x Ga1−x As as sulphur vector forn-type doping. Doping efficiencies are less than 10−3 at usual growth temperatures, and are limited by an incorporation competitive surface process, probably 2Ga+H2S→Ga2S+H2. In AlxGa1−x As forx≧0.2 the doping efficiency is further reduced by carrier freeze-out at deep levels. Measured thermal activation energies depend on growth conditions and remain relatively low even up to the direct-indirect bandgap crossover for substrate temperatures in the 585–645
    Materialart: Digitale Medien
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  • 37
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 46 (1988), S. 255-273 
    ISSN: 1432-0630
    Schlagwort(e): 73.60 ; 77.50 ; 81.10
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract This paper presents an overview of the single-wafer optical processing techniques for integrated circuit fabrication with an emphasis on their applications to insulator growth. Rapid thermal growth of various thin homogeneous and heterogeneous dielectrics on silicon substrates including silicon dioxide, silicon nitride, nitrided oxides, and composition-tailored insulators will be described and some electronic device applications of the rapidly grown dielectrics will be examined. Multicycle rapid growth processes have been used for dielectric structural engineering and in-situ formation of thin layered insulators. The compositional depth profiles and the electrical characteristics of devices are controlled through the synthesis of an appropriate sequence of the wafer temperature-vs-time profiles and process gas cycles. The ongoing developments and future prospects of single-wafer rapid processing for advanced microelectronics manufacturing will also be discussed.
    Materialart: Digitale Medien
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  • 38
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 46 (1988), S. 5-8 
    ISSN: 1432-0630
    Schlagwort(e): 73.60 ; 85.30
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Measurements of steady-state photoconductivity with respect to light-induced defect generation in amorphous hydrogenated silicon (a-Si: H) show that the power index of the time evolution (long-term observation) of the photodegradation is determined by the exposure temperature and the material.
    Materialart: Digitale Medien
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  • 39
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 47 (1988), S. 123-129 
    ISSN: 1432-0630
    Schlagwort(e): 81.10 ; 73.60 ; 75.30
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Capacitance-voltage (CV) profiling measurements on delta-doped n-type GaAs reveal extremely narrow peaks with a full-width at half-maximum of 40 Å. Comparison of experimental with self-consistently calculated CV profiles demonstrates that Si impurities are localized on a length scale of a lattice constant in delta-doped GaAs. Diffusion and segregation are of minor importance. The basic theory of CV measurements on quantummechanical systems such as delta-doped semiconductors is developed and presented.
    Materialart: Digitale Medien
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  • 40
    ISSN: 1432-0630
    Schlagwort(e): 73.60 ; 75.60 ; 68.55
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract We have grown by means of Molecular Beam Epitaxy ultrathin (1 to ∼ 10 ML) films of fcc Fe and Co on a Cu(001) surface, thus stabilizing this high temperature phase of bulk Fe and Co at room temperature. All films, including the single monolayers, are ferromagnetic. The Co films are magnetized in plane, independently on the thickness. Fe films thicker than 2 ML are magnetized along the film normal. Up to now, the statistical uncertainty is still too large to conclusively prove an enhancement of the magnetic moment for the thinnest Co films.
    Materialart: Digitale Medien
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  • 41
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 47 (1988), S. 205-208 
    ISSN: 1432-0630
    Schlagwort(e): 74.70 ; 72.20 ; 61.70
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Thermoelectric power (TP) and electrical conductivity (EC) measurements were performed for YEa2Cu3Ox at 1128 K under controlled oxygen partial pressure varying between 50 and 105 Pa. Three regimes are observed for the electrical properties. At low $$p_{{\text{O}}_{\text{2}} } (〈 1.6{\text{ }} \times {\text{ 10}}^{\text{2}} {\text{ }}{\text{Pa}})$$ both TP and EC remain constant with $$p_{{\text{O}}_{\text{2}} } $$ . In the medium range $$(1.6{\text{ }} \times {\text{ 10}}^{\text{2}}〈 p_{{\text{O}}_{\text{2}} }〈 7.6{\text{ }} \times {\text{ 10}}^{\text{3}} {\text{ Pa)}}$$ sharp changes of both electrical parameters occur; TP changes sign from positive above 4×102 Pa to negative below this $$p_{{\text{O}}_{\text{2}} } $$ value. In the high $$p_{{\text{O}}_{\text{2}} } $$ region (〉7.6×103 Pa) TP vs log $$p_{{\text{O}}_{\text{2}} } $$ exhibits two slopes; 5.1 below 1.5×104 Pa and 8.4 above this $$p_{{\text{O}}_{\text{2}} } $$ value. The slopes can be discussed in terms of the defect structure involving singly and doubly ionized oxygen vacancies below and above 7.6×103 Pa, respectively.
    Materialart: Digitale Medien
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  • 42
    ISSN: 1432-0630
    Schlagwort(e): 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Measurements of the electrical conductivity, thermelectric power and thermal conductivity of an AgTlTe2 semiconductor in the solid and liquid states were carried out in a wide range of temperatures. In the liquid state the data analyzed in terms of a model developed for the density of states and electrical transport in solid amorphous semiconductors. Positive thermoelectric power suggests a large predominance of holes in electrical transport.
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  • 43
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 48 (1989), S. 549-558 
    ISSN: 1432-0630
    Schlagwort(e): 79.60 ; 73.40 ; 73.60 ; 73.60H ; 71.25M ; 81.15 ; 46.30P
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The interface properties of hydrogenated amorphous carbon films (a-C:H) on Si and GaAs substrates have been studied by in-situ photoelectron spectroscopy measurements. The a-C:H films have been deposited by direct ion beam deposition. Distinct differences in the interface formation have been observed during film depositon on the two substrates. The data clearly reveal a decomposition of the GaAs at the interface which can be related to the reduced adhesion of a-C: H on the compound semiconductor substrate.
    Materialart: Digitale Medien
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  • 44
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 49 (1989), S. 431-436 
    ISSN: 1432-0630
    Schlagwort(e): 71.55 ; 66.30 ; 73.60
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Recent investigations on transition-metal impurities in silicon emphasizing the effect of the combined diffusion of two transition metals are presented and briefly discussed. The electronic properties and basic thermal kinetics are analysed by DLTS. The conversion of a Pd-related multivalent defect atE c-0.35 eV andE c-0.57 eV to the Pd-related defect atE c −0.22 eV is observed, and a Pd-Fe complex level atE c −0.32 eV is identified. The annealing characteristics of the multivalent Rh levels atE c-0.33 eV andE c-0.57 eV are observed, and used to analyse the influence of prior Rh doping on the Au diffusion. A complex formed by the codiffusion of Au and Cu is observed atE v+0.32eV andE v+0.42 eV, and shown to exhibit bistable behavior as does a similarly produced Au-Ni complex observed atE v + 0.35 eV andE v+0.48 eV.
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  • 45
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 60 (1995), S. 509-514 
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 72.40 ; 72.80.Ey
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract We report the investigation of the Photo-Magneto-Electric effect (PME) in semi-insulating Liquid-Encapsulated (LEC-) grown GaAs crystals, using both intrinsic and impurity excitation. The role of the majority and minority carriers on the conductivity phenomena was evaluated and the lifetimes of electrons and holes were determined depending on excitation conditions. Anomalously high PME voltages, reaching in some cases some volts, were measured, which demonstrate a sharp drop in the temperature region 320–360K. The observed changes are discussed supposing that the influence of the non-homogeneous defect structure of the samples is essential.
    Materialart: Digitale Medien
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  • 46
    ISSN: 1432-0630
    Schlagwort(e): 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Deep-Level Transient Spectroscopy (DLTS) measurements were carried out on silicon p+nn+ diodes before and after irradiation with fast neutrons at room temperature with fluences 5.5×1011 and 1.0×1012 n/cm2. It was found out, that all preexisting defects decreased their amplitudes during irradiation, while only one defect, identified as a single-charged divacancy, increased in amplitude. An interpretation is proposed in terms of the cluster model, and the applicability of the DLTS is discussed.
    Materialart: Digitale Medien
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  • 47
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 61 (1995), S. 163-170 
    ISSN: 1432-0630
    Schlagwort(e): 78.40 ; 78.30 ; 73.60 ; 78.65
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Optical properties in the spectral range from 0.06 to 5.5 eV of fullerite films on different substrates, C60 powder, and dissolved fullerene material are investigated by spectroscopic ellipsometry and optical transmission and reflection measurements. Depolarization effects are taken into account during determination of the dielectric function of fullerite films by ellipsometry. The optical gap for C60 films is found to be 1.63 eV. Three optical absorption bands are observed at 2.69, 3.53, and 4.49 eV. The dielectric function in the infrared shows the four characteristic infrared vibrational modes. The interference pattern seen in UV/VIS reflection measurements are used for high-precision thickness determination of the films. The Clausius-Mossotti formula is successfully applied to reproduce the experimental optical data measured in C60/dichlormethane solutions. Deviations between theory and experiments provide interesting information about the intermolecular interaction of the C60 molecules. A tentative interpretation of the measured absorption bands is presented.
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  • 48
    ISSN: 1432-0630
    Schlagwort(e): 73.60 ; 72.40 ; 78.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Amorphous Si1−xCx: H thin films were prepared by the rf magnetron sputtering method using a composite target of silicon and graphite. The dependence of the optical, structural, electrical, and optoelectronic properties on the carbon contentx was investigated, by measuring the optical absorption spectra, ir spectra, dark conductivity, photoconductivity and ESCA spectra. The optical gap was found to be unchanged with increasingx below about 0.6, in spite of the increase in the amount of the SiC bond. This is considered to be due to the formation of the carbon clusters. It is found that the photosensitivity shows a maximum at aboutx = 0.2, and is about one order of magnitude larger than the film withx = 0. This is related to the decrease in the dark conductivity, which is ascribed both to the formation of the SiC bond and to the reorganization of the defect-rich structure of sputter-deposited amorphous Si by the addition of about 20% carbon. The photoconductive effect was gradually lost in the range ofx above 0.6. In this range, the optical gap increases rapidly owing to the rapid increase of the SiC bond.
    Materialart: Digitale Medien
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  • 49
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 38 (1985), S. 145-149 
    ISSN: 1432-0630
    Schlagwort(e): 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The impact ionization in p-type indium antimonide at 77 K was investigated both experimentally and theoretically. The dc pulse measurements with the time resolution of 50 ps and the high-field Hall measurements produced clear evidence that the impact ionization inp-InSb is initiated by equilibrium holes. The calculated hole generation rate gives good agreement with the experimental results.
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  • 50
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 39 (1986), S. 135-139 
    ISSN: 1432-0630
    Schlagwort(e): 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Coherent current oscillations with frequencies of several hundreds of megahertz and microwave generation at frequencies up to 40 GHz were investigated in then-InSb samples subjected to crossed electric and magnetic fields. They are shown as being caused by electric field redistribution and negative differential mobility in high-field regions.
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  • 51
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 40 (1986), S. 171-176 
    ISSN: 1432-0630
    Schlagwort(e): 73.60 ; 71.20 ; 86.30
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract We have reexamined the validity of quasi-static capacitance-voltage (C-V) measurements when applied to hydrogenated amorphous silicon (a-Si: H) diodes. Displacement currents with the application of a linear ramp voltage to an a-Si:H Schottky diode exhibit a slow response with time constants ranging 0.1–1 s which cannot be measured completely by the conventional measurements. The measured capacitance and the effective density of gap states obtained from the measurement depend on the timing of current observation even when the small value of the order of 0.01 V/s is chosen for the ramp rate. We propose a possible means to realize the true quasi-staticC-V measurement of a-Si:H diodes.
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  • 52
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 42 (1987), S. 303-309 
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 79.20 ; 85.30
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Large signal characterisation of double heterostructure DDR Impatt diode has been carried out in the millimeter-wave range considering the MITATT mode of operation. The structure of the device is p+-p2-p1-n1-n2-n+ where impact ionisation and tunneling takes place in the p1-n1 region. In this study we have considered two well-known heterostructures, e.g., InP/GaInAs/InP and InP/InGaAsP/InP and one nonconventional structure GaAs/InP/GaAs. The theoretical results of the performances of these devices as regards of output power, efficiency, and negative conductance revealed that the structures are quite promising as the source of power in the millimeter-wave range. The analysis may be used for other mm wave DDR heterostructure Impatts.
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  • 53
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 43 (1987), S. 29-35 
    ISSN: 1432-0630
    Schlagwort(e): 71 ; 72.20 ; 78
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The pre-exponential factor of the transition probability of a trapped charge carrier into an excited state is evaluated from two different approaches. The semi-classical treatment based on a thermodynamical concept involves the calculation of the vibrational entropy change from the partition sum. The quantum-mechanical treatment deals with non-radiative transitions due to electron-phonon coupling. The factor is found to be explicitely dependent on both the temperature and the lattice vibration frequencies represented by a single Einstein oscillator. In addition, the results from different concepts show similar behaviour. As a consequence the effect of lattice vibrations on the position as well as on the shape of glow peaks in thermally stimulated measurements are investigated on a simple phenomenological base. The analysis of some experimental results can be performed in accordance with the theoretical predictions.
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  • 54
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 72.80J ; 70.90
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The real part of the dielectric constant was studied in the temperature range of 340 to 10 K, and at frequencies that range from 1 to 104 Hz. The dipole contribution to the dielectric constant has been found at temperatures lower than 110 K while the space-charge contribution due to the increase of crystal defects is dominant at temperatures higher than 290K.
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  • 55
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 43 (1987), S. 139-141 
    ISSN: 1432-0630
    Schlagwort(e): 85.40 ; 72.20 ; 76
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract A polarized N-O bond behaves as an intramolecular p-n junction. Their rectifying properties have been found in 1,3-dimethylisoxasole, 1-phenylsydnone, and 1-(4-methylphenyl)sydnone molecules based on H1-NMR data.
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  • 56
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 44 (1987), S. 279-284 
    ISSN: 1432-0630
    Schlagwort(e): 81.40 ; 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The behaviour of Xe implanted at the Ni-Si interface and irradiated with Nd-laser pulses is studied in details and compared with Xe implantation into NiSi2 and into pure Si. Ion beam mixing followed by laser irradiation is able to form good quality epitaxial NiSi2 layer on Si. An inward segregation of Xe is observed with retention of Xe at a depth of 30 nm inside pure silicon. Implantation of Xe into NiSi2 or pure Si causes broadening and loss of Xe, as generally observed for implantation into pure materials. The different behaviour of Xe at the Si/NiSi2 interface must thus be ascribed to peculiar characteristics of the interface itself.
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  • 57
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 46 (1988), S. 113-117 
    ISSN: 1432-0630
    Schlagwort(e): 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Switching effects in AgTlSe2 and CuTlSe2 chalcopyrite semiconductors films have been investigated. The threshold switching voltage was found to increase linearly with the thickness, moreoverV th increases exponentially with the temperature. The rapid transition between the highly resistive and conductive states was attributed to an electrothermal origin from Joule's heating of a current channel.
    Materialart: Digitale Medien
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  • 58
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 46 (1988), S. 207-213 
    ISSN: 1432-0630
    Schlagwort(e): 61.40 ; 72.20 ; 78.65
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Films of a-Si: H have been deposited by means of a dc hot cathode discharge of SiH4 with electrostatic confinement at a pressure as low as 0.4 Pa. The plasma used is quite quiescent as has been observed by means of reproducible Langmuir probe measurements. Substrates have been placed at different locations in between the electrodes, some of them facing the anode and the others facing the cathode. Films deposited on substrates facing the cathode present a granular, non-columnar, structure, an IR spectrum with only SiH absorption peaks, and a very low photoresponse. Films deposited on substrates facing the anode have a similar IR spectrum but are homogeneous, have lower hydrogen content, and present a high photoresponse. The optical absorption coefficientα shows in all samples theαnE=C(E−E0) x behaviour, but with exponentx=3 and notx=2 as is usually considered in a-Si∶H.
    Materialart: Digitale Medien
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  • 59
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 46 (1988), S. 249-253 
    ISSN: 1432-0630
    Schlagwort(e): 68.55 ; 73.60 ; 77.55
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The low-temperature fabrication of silicon nitride films by ArF excimer laser irradiation has been studied. Two fabrication methods are presented. One is photoenhanced direct nitridation of a silicon surface with NH3 for very thin gate insulators, and the other is photo-enhanced deposition of silicon nitride films with Si2H6 and NH3 gases for stable passivation films. The ArF excimer laser irradiation dissociates the NH3 gas producing NH and NH2 radicals which proved effective in instigating the nitridation reaction. The quality of both films has been much improved and the growth temperature has been lowered by using laser irradiation. These photo-enhanced processes seem to be promising ULSI techniques because they do not depend on high temperatures and are free from possible reactor contamination.
    Materialart: Digitale Medien
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  • 60
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 46 (1988), S. 255-273 
    ISSN: 1432-0630
    Schlagwort(e): 73.60 ; 77.50 ; 81.10
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract This paper presents an overview of the single-wafer optical processing techniques for integrated circuit fabrication with an emphasis on their applications to insulator growth. Rapid thermal growth of various thin homogeneous and heterogeneous dielectrics on silicon substrates including silicon dioxide, silicon nitride, nitrided oxides, and composition-tailored insulators will be described and some electronic device applications of the rapidly grown dielectrics will be examined. Multicycle rapid growth processes have been used for dielectric structural engineering and in-situ formation of thin layered insulators. The compositional depth profiles and the electrical characteristics of devices are controlled through the synthesis of an appropriate sequence of the wafer temperature-vs-time profiles and process gas cycles. The ongoing developments and future prospects of single-wafer rapid processing for advanced microelectronics manufacturing will also be discussed.
    Materialart: Digitale Medien
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  • 61
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 46 (1988), S. 299-303 
    ISSN: 1432-0630
    Schlagwort(e): 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The nonlinearI–V behaviour and threshold switching of the bulk Se-Te-Sn system have been experimentally studied at various temperatures. It is observed that the curves are linear for low voltages and become superlinear at higher voltages. After a certain voltageV th, the current through the material shoots to a very high value and the potential across the material drops to a low value. It is also found that there is a decrease inV th with increase in percentage of tin and temperature. An attempt is made to explain the nonlinearI–V behaviour and threshold switching on the basis of a microcrystallite model. A study of Se-Te-Sn system reveals that our results are in concurrence with the theoretical predictions.
    Materialart: Digitale Medien
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  • 62
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 48 (1989), S. 181-188 
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 72.70 ; 06
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract A method for quantitative characterization of chaotic dynamical systems is discussed. An electronic instrument for determining the number of independent variablesk *, involved in the motion, is described. It allows one to obtain these in real time from a single observable. The suggested technique has been applied to quantification of strange attractors underlying chaotic instabilities in semi-insulating GaAs∶Cr, and n-Ge, irradiated with high energy electrons. In n-Ge, for instance, the measured numbersk * range from 2 to 4 depending on control parameters. These measurements reveal the highly deterministic nature of the observed chaotic oscillations. The physical mechanisms responsible for the current instabilities and chaotic behaviour are discussed.
    Materialart: Digitale Medien
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  • 63
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 49 (1989), S. 273-277 
    ISSN: 1432-0630
    Schlagwort(e): 73.60
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Metallic superlattices of copper and manganese have been synthesized on glass and mica substrates by a sequential evaporation technique. The electrical resistivity and the temperature coefficient of resistance (TCR) of layered Cu/Mn has been studied for various thicknesses (d) in the range 2–6 nm by varying the number of double layers (n) from 5–35. The transition from a negative to positive TCR has been observed ford 〉5 nm. The thickness dependence of room temperature resistivity (ϱ RT) and TCR shows oscillatory behaviour.
    Materialart: Digitale Medien
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  • 64
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 60 (1995), S. 1-12 
    ISSN: 1432-0630
    Schlagwort(e): 73.60 ; 82.65 ; 42.65
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Systematic studies were carried out with the goal to further develop optical Second-Harmonic Generation (SHG) as a tool for surface and interface analysis. For this purpose hexadecane thiol, HS(CH2)15CH3, on polycrystalline Au films served as a model system to study the spectral behavior of the susceptibility of the gold surface and its variation as a function of coverage. Experiments have been performed at different coverages, with different polarization combinations of the incident and detected light, different angles of incidence and different wavelengths ranging from z=615 nm to 660 nm. In addition to the intensity of the generated second-harmonic light, its phase was measured. As a result, a complete determination of all independent elements of the susceptibility tensor became possible. The studies with different excitation wavelengths reveal the presence of resonances of the tensor elements and strikingly demonstrate the importance of phase measurements for an unambiguous interpretation of the data. The superposition of resonant contributions originating from different elements of the susceptibility tensor is discussed and gives rise to very distinct and peculiar spectral features.
    Materialart: Digitale Medien
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  • 65
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 60 (1995), S. 77-79 
    ISSN: 1432-0630
    Schlagwort(e): 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The electrical conductivity and thermoelectric power of AgInSe2 have been investigated as a function of temperature from 420°C to 950°C. Experimental data are analyzed in terms of a model developed for the density of states and electrical transport in solid amorphous semiconductors [1]. The activation energy calculated from electrical conductivity data is found to be 0.06 eV for the solid and 0.37 eV for the liquid phase. Moreover, the coefficient of the linear decrease of the energy gap with temperature was found to be 1.96×10−4 eV/K.
    Materialart: Digitale Medien
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  • 66
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 62 (1996), S. 241-245 
    ISSN: 1432-0630
    Schlagwort(e): 68.55 ; 72.20 ; 73.30
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Electrical, structural and reaction characteristics of In-based ohmic contacts ton-GaAs were studied. Attempts were made to form a low-band-gap interfacial phase of InGaAs to reduce the barrier height at the metal/semiconductor junction, thus yielding low-resistance, highly reliable contacts. The contacts were fabricated bye-beam sputtering Ni, NiIn and Ge targets on VPE-grownn +-GaAs film (≈1 μm, 2 × 1018 cm−3) in ultrahigh vacuum as the structure of Ni(200 Å)/ NiIn(100 Å)/Ge(40 Å)/n +-GaAs/SI-GaAs, followed by rapid thermal annealing at various temperatures (500–900°C). In this structure, a very thin layer of Ge was employed to play the role of heavily doping donors and diffusion limiters between In and the GaAs substrate. Indium was deposited by sputtering NiIn alloy instead of pure In in order to ensure In atoms to be distributed uniformly in the substrate; nickel was chosen to consume the excess indium and form a high-temperature alloy of Ni3ln. The lowest specific contact resistivity (ϱ c) of (1.5 ± 0.5) × 10−6 cm2 measured by the Transmission Line Method (TLM) was obtained after annealing at 700°C for 10 s. Auger sputtering depth profile and Transmission Electron Microscopy (TEM) were used to analyze the interfacial microstructure. By correlating the interfacial microstructure to the electronical properties, In x Ga1− xAs phases with a large fractional area grown epitaxially on GaAs were found to be essential for reduction of the contact resistance.
    Materialart: Digitale Medien
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  • 67
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 62 (1996), S. 345-353 
    ISSN: 1432-0630
    Schlagwort(e): 61.70 ; 72.20 ; 72.40
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The recombination lifetime and diffusion length of intentionally iron-contaminated samples were measured by the Surface Photo Voltage (SPV) and the Elymat technique. The lifetime results from these techniques for intentionally iron-contaminated samples were analysed, in particular for the aspect of the injection-level dependency of recombination lifetime. Based on theoretical considerations, a method for the analysis of deep-level parameters combining constant photon flux SPV and Elymat measurements has been developed. This method is based on a detailed numerical analysis of the Elymat technique, including the Dember electric field, the characteristics of the laser beam, the transport parameters of the semiconductor and multilevel Shockley-Read-Hall (SRH) recombination kinetics. The results of the numerical simulation are applied to the analysis of recombination lifetime measurements on intentionally iron-contaminated samples. We compared numerical simulations and experimental results from SPV and Elymat for p-type samples using the classical acceptor level atE v +0.1 eV and the donor level of FeB pairs atE c -0.3 eV as recombination centre. Better consistency in the interpretation of the results has been found in the doping range 1014–1016 cm−3 supposing theE c -0.3 eV level as predominant recombination centre. An attempt to extract the electron and hole capture cross-sections for this defect is made.
    Materialart: Digitale Medien
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  • 68
    ISSN: 1432-0630
    Schlagwort(e): 72.40 ; 73.60 ; 81.15 ; 81.40
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract A novel combination of methods is shown to produce semiconducting WS2 thin films with properties close to those of a single crystal. The first step requires the deposition of a very thin Ni layer on a quartz substrate. On top of it an amorphous, sulphur rich, (WS3 +x ) thin film is deposited by reactive rf sputtering. The final annealing step in an argon atmosphere yields 200 nm thick WS2 films. X-ray diffraction shows that the films crystallize in the 2H-WS2 phase and are perfectly oriented with the (002) basal planes parallel to the substrate. Residual W18O49 needles andβ-NiS grains are detected by transmission electron microscopy. The dc conductivity and its activation energy have values typical of bulk crystals. The optical absorption spectrum measured at Room Temperature (RT) shows excitonic peaks at the same energies as in a single crystal. RT photoconductivity measured as a function of wavelength is shown to result from interband transitions.
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  • 69
    Digitale Medien
    Digitale Medien
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 28 (1988) 
    ISSN: 0032-3888
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Physik
    Materialart: Digitale Medien
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  • 70
    Digitale Medien
    Digitale Medien
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 28 (1988), S. 413-420 
    ISSN: 0032-3888
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Physik
    Notizen: This paper presents the development of the boundary element equations for the compression molding process of isothermal Newtonian fluids. It shows the numerical implementation of the boundary element equations and presents a simple method of carrying out the domain integral present in the governing equations. The results and accuracy of a boundary element simulation are discussed, and the numerical results compared to experimental values.
    Zusätzliches Material: 14 Ill.
    Materialart: Digitale Medien
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  • 71
    Digitale Medien
    Digitale Medien
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 28 (1988), S. 605-609 
    ISSN: 0032-3888
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Physik
    Notizen: The static delamination behavior of graphite/epoxy composite specimens subjected to mode I tensile opening (using UDCBUniform double cantilever beam. specimens), and pure mode II shear loading (using ENFEnd-notched flexural. specimens) were studied. The graphite epoxy composites for the study were made from commercially treated fibers, with and without an electropolymerized interlayer. The mode I fracture energy (GIC) was found to be significantly higher (more than 50 percent) for the coated fibers. However, this improvement was accompanied by a high reduction (more than 3 times) in the mode II fracture energy (GIIC). This effect is apparently related to poor adhesion between the interlayer and the epoxy resin, which may be corrected by use of a “top layer” of appropriate composition to form chemical bonds between the phases. The fracture toughness (KIC) of composites made with commercially treated fibers was also evaluated, using double side-notched specimens.
    Zusätzliches Material: 6 Ill.
    Materialart: Digitale Medien
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  • 72
    Digitale Medien
    Digitale Medien
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 28 (1988), S. 583-591 
    ISSN: 0032-3888
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Physik
    Notizen: An analytical methodology was developed capable of describing interrelations between thermal processing and polymer structure for thermoplastic based composite laminates. Specifically, this modeling methodology was used to describe experimental results generated with a specially designed match die quench mold by processing both neat PEEK polymer and carbon fiber reinforced laminate samples at different cooling rates. The developed model accurately predicted temperature profiles for PEEK laminates of different thicknesses, under normal as well as extreme quenching conditions of 114°C/s. surface cooling rates that are possible to generate with the quench mold. In general, the modeling methodology is capable of predicting a part's thermal profile during processing in terms of the composite's microscopic intrinsic properties (fiber and matrix), composition, and lamina orientation. Furthermore, by coupling to the thermal profile description, a previously developed crystallization kinetics model for PEEK polymer and its carbon reinforced composite, a quantitative description of structural development during processing was obtained. Thus, with this analytical methodology, a skin-core crystallinity profile, where the crystallinity varies with part-thickness as a result of uneven cooling experienced during processing, was predicted both for the neat PEEK polymer and its carbon reinforced laminate forms. Finally, the developed methodology clearly established the interplay of both microscopic heat transfer and kinetics of crystallization/solidification of the matrix that must be accounted for in predicting the final structure of a carbon fiber reinforced laminate that will, in turn, govern microscopic and macroscopic performance.
    Zusätzliches Material: 7 Ill.
    Materialart: Digitale Medien
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  • 73
    Digitale Medien
    Digitale Medien
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 28 (1988), S. 634-639 
    ISSN: 0032-3888
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Physik
    Notizen: Neat poly(ether-ether-ketone) (PEEK) and carbon fiber reinforced PEEK (APC-2) specimens were prepared using a variety of cooling rates to achieve a range of crystallinities. Amorphous specimens were exposed to a variety of fluids to determine the penetrant types which are able to strongly influence the material. This allowed the estimation of the solubility parameter and hydrogen bonding index for PEEK to be 9.5 and 3.1, respectively. Methylene chloride was used to investigate the kinetics of penetrant sorption. The data demonstrated Case II behavior, with the initial crystallinity having a pronounced effect on both the kinetic and equilibrium data. Accordingly, a model was proposed capable of describing the sorption level and penetration depth as a function of time given the sample crystallinity and sorption temperature. With Case II behavior there was no difference in the sorption kinetics of neat and fiber reinforced PEEK. Finally, the dynamic mechanical properties measured during sorption were found to be dependent on the sorption process.
    Zusätzliches Material: 8 Ill.
    Materialart: Digitale Medien
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  • 74
    Digitale Medien
    Digitale Medien
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 28 (1988), S. 670-678 
    ISSN: 0032-3888
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Physik
    Notizen: The dynamic shear viscosity and the morphology of polypropylene homopolymer and copolymer blended with linear low density polyethylene are studied. A maximum in the dynamic shear viscosity vs. blend composition is reported for the polypropylene copolymer, linear low density polyethylene system. The increasing dynamic shear viscosity is in accordance with the occurrence of a morphology of polyethylene inclusions in rubber surrounded by a polypropylene matrix. Comparing calculations of the dynamic shear viscosities - based on a shell model with interlayer - and experimental results supports this view.
    Zusätzliches Material: 17 Ill.
    Materialart: Digitale Medien
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  • 75
    Digitale Medien
    Digitale Medien
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 28 (1988), S. 684-687 
    ISSN: 0032-3888
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Physik
    Notizen: Hydroxy-terminated copoly(fstyrene-b-1,2-butadiene) (HPSB) containing rubber-affinitive vinyl side chains and having a molecular weight of 2000 to 4000 were prepared, and block copolyurethanes were synthesized by using a low molecular weight hydroxy-terminated poly (ethyl en e terephthalate) as a PET-affinitive component and 4,4′-diphenylmethane diisocyanate as a chain extender. The relationships between the molecular weight of HPSB, copolymerization ratio of styrene to butadiene and the adhesive strength of PKT/rubber in high temperature atmospheres were examined. A peak of adhesive strength was observed at styrene copolymerization ratio of 20 wt percent and a HPSB molecular weight of 3000. The adhesion mechanism was estimated from the behavior of the characteristic infrared absorption of block Copolyurethane in heating.
    Zusätzliches Material: 2 Ill.
    Materialart: Digitale Medien
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  • 76
    Digitale Medien
    Digitale Medien
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 28 (1988), S. 718-727 
    ISSN: 0032-3888
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Physik
    Notizen: In vibration welding of thermoplastics, frictional work done by vibrating two parts under pressure, along their common interface, is used to generate heat to effect a weld. The main process parameters in vibration welding are the weld frequency, the amplitude of the vibratory motion, the weld pressure, and the weld time. How these parameters affect weld quality, the conditions that result in the best welds, the weldability of dissimilar plastics, and the effect of fillers such as glass are of interest. To address these issues, a research vibration welding machine in which all the parameters can be independently and accurately controlled and monitored was designed and fabricated. The phenomenology of welding, as determined by experiments on the four thermoplastics polycarbonate, poly (butylene terephthalate), polyetherimide, and modified poly (phenylene oxide), is described.
    Zusätzliches Material: 19 Ill.
    Materialart: Digitale Medien
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  • 77
    Digitale Medien
    Digitale Medien
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 28 (1988), S. 743-757 
    ISSN: 0032-3888
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Physik
    Notizen: An engineering analysis of the reactive extrusion process of a thermoplastic polyurethane was made through numerical simulation and actual experiment. The reactants used in this system were 4,4′diphenylmethane diisocyanate, polycaprolactone diol (M.W., 824), and 1,4-bu-tanediol with equivalent weight ratio of 2:1:1. As a catalyst, dibutyltin dilaurate was used. The reaction kinetics and the viscosity function were obtained through experiments, and the mathematical model which includes the conservation equations of mass, momentum, energy, and chemical species was solved numerically to obtain the velocity, concentration, temperature, viscosity, and pressure profiles. The actual experiments were performed in the laboratory scale extruder to compare the experimental results with those of the numerical simulation.
    Zusätzliches Material: 30 Ill.
    Materialart: Digitale Medien
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  • 78
    Digitale Medien
    Digitale Medien
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 28 (1988), S. 775-784 
    ISSN: 0032-3888
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Physik
    Notizen: A series of polyurethane-urea/polyvinyl simultaneous interpenetrating polymer networks (SINs) were prepared starting from a mixture of isocyanate prepolymer blocked with N-(1-1′-dimethyl-3-cxobutyl) acrylamide oxime, chain extender, vinyl monomers, and catalysts. Their physical properties and morphology were investigated using differential scanning calorimetry, dynamic mechanical measurements, and small-angle X-ray scattering. The polyurethane-urea networks examined were two-phase in nature. The vinyl network was formed with diacetone acrylamide oxime, trimethylolpropane trimethacrylate, and N-vinyl-pyrrolidone. Calorimetric analyses revealed that the polyether soft segment phase separated within the SINs. At higher temperature, dynamic mechanical measurements demonstrated the presence of only one glass transition temperature (Tg) intermediate in temperature to the Tg of the vinyl network and the Tg of the urethane hard phase. This is indicative of chain entanglement (interpenetration) between the vinyl network and the polyurethane hard segments resulting in a two-phase morphology. Small-angle X-ray scattering analyses provided measurements of diffuse phase boundary thickness, phase mixing, and domain size distribution. Appreciable interfacial thickness was not observed and thus phase mixing occurred within the phases. Domain size distribution indicated that high network constraints hindered the development of domains and limited the phase segregation.
    Zusätzliches Material: 10 Ill.
    Materialart: Digitale Medien
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  • 79
    Digitale Medien
    Digitale Medien
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 28 (1988) 
    ISSN: 0032-3888
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Physik
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 80
    Digitale Medien
    Digitale Medien
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 27 (1987), S. 1021-1034 
    ISSN: 0032-3888
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Physik
    Notizen: Equations are derived that relate the orientation of “pseudo-affine” reoriented structural units after a biaxial deformation to the degrees and the directions of the effective drawings. The connection between these drawing parameters and those externally applied is analyzed in detail. It is shown how a comparison of these two sets of drawing parameters allows conclusions regarding the distribution throughout the material of the stresses that cause the deformation, the inhomogeneity of the deformation, and the role of non-orienting flow during deformation. In particular, the orientation of biaxially drawn poly(ethylene terephthalate) films is investigated, and it is shown what general information can be obtained on the deformation behavior of this material on the basis of these considerations.
    Zusätzliches Material: 7 Ill.
    Materialart: Digitale Medien
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  • 81
    Digitale Medien
    Digitale Medien
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 27 (1987), S. 1059-1068 
    ISSN: 0032-3888
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Physik
    Notizen: Scale-up from small laboratory size extruders to large production size extruders is a procedure of great practical importance. Many scale-up rules and theories have been proposed in the past, however it is not always clear how the different scale-up methods will affect extruder performance. A basic analysis of scale-up in plasticating single screw extruders is developed from which the effect of a certain scale-up strategy on extrusion performance can be evaluated in terms of solids conveying, melting, melt conveying, mixing, residence time, heat transfer, power consumption, and specific energy consumption. Various existing scale-up theories are evaluated and compared using the basic analysis. A number of existing scale-up theories have some significant drawbacks, in particular with non-constant specific energy consumption and imbalance between melting rate and pumping rate. Conditions that are desirable to achieve in scale-up are enumerated and ranked in terms of importance. This leads to two new scale-up methods that result in constant mechanical specific energy consumption and high throughput rates. The first scale-up method keeps the specific surface area constant. This scale-up should work well for high values of the Brinkman number. However, at low values of the Brinkman number, the melting rate may be insufficient. The second scale-up method keeps the melting rate at low Brinkman number equal to the pumping rate and, thus, should be useful in cases where the first scale-up method cannot be used.
    Zusätzliches Material: 8 Ill.
    Materialart: Digitale Medien
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  • 82
    Digitale Medien
    Digitale Medien
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 27 (1987) 
    ISSN: 0032-3888
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Physik
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 83
    Digitale Medien
    Digitale Medien
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 27 (1987), S. 1128-1136 
    ISSN: 0032-3888
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Physik
    Notizen: The plane strain fracture toughness and fracture mechanisms of several tough engineering plastics have been studied and compared with poly(methyl methacrylate) (PMMA), a relatively brittle polymer. The tough polymers all are observed to form a multiple craze zone at the crack tip, which is shown to be the primary source of plane strain fracture toughness in these materials. The multiple craze zone is retained during slow crack growth but is metastable, and at a critical stress intensity and associated crack velocity, the system passes through a transition to a greatly accelerated single craze mode of unstable propagation.
    Zusätzliches Material: 14 Ill.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 84
    Digitale Medien
    Digitale Medien
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 27 (1987), S. 1148-1155 
    ISSN: 0032-3888
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Physik
    Notizen: The optical properties of bisphenol-A polycarbonate resin as described by the complex index of refraction, N = n - ik, are derived by Kramers-Kronig analysis of experimental absorption and reflectance data obtained in the range 40μm ≥ λ ≥ 105 nm. Electronic absorption processes in polycarbonate are characterized by two broad absorption peaks centered at ∼200 and ∼100 nm.
    Zusätzliches Material: 10 Ill.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 85
    Digitale Medien
    Digitale Medien
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 27 (1987), S. 1182-1186 
    ISSN: 0032-3888
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Physik
    Notizen: Three-layer coextruded blown (either blend or composite) films, made of low-density polyethylene and linear lowdensity polyethylene (1:1 ratio) of identical density, were compared. The tensile properties of both systems are nearly as high as those of the linear polyethylene while high strain rate properties including impact strength and tear resistance of the composite film are superior. Some structural insight was obtained by thermal analysis and thermoelastic measurements. Structure property relationships are discussed in light of the unique behavior, structure, and morphology of linear low-density polyethylene. The two polyethylenes are only compatible to a rather limited extent mainly affecting their blend behavior. However, a strong mutual reinforcement effect was observed.
    Zusätzliches Material: 2 Ill.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 86
    Digitale Medien
    Digitale Medien
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 27 (1987), S. 1203-1208 
    ISSN: 0032-3888
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Physik
    Notizen: A Viton copolymer containing vinylidene fluoride (VF2) and hexafluoropropylene (HFP), and a terpolymer containing VF2, HFP, and tetrafluoroethylene (TFE) were cross linked using varying amounts of Bisphenol AF to yield two series of fluoroelastomer networks, Stress-strain isotherms in elongation were determined for these samples at several temperatures and at two degrees of swelling with phenyl acetate. Strain-induced crystallization was observed, as evidenced by upturns in the isotherms at high elongations. It appears to be more pronounced in the terpolymer samples, presumably because the TFE units not only can crystallize themselves, but can co-crystallize with the VF2 units. The crystallization was found to persist upon moderate increase in temperature, but was suppressed when the networks were swollen, Thermoelastic (force-temperature) measurements were used to obtain values of the fraction fe/f of the elastic force that is due to energetic effects. Negative values were obtained for both types of samples and, in the case of two samples studied in detail, their magnitudes increased with increase in elongation. The magnitudes were larger and the increases more pronounced in the case of the terpolymer networks, as would be expected from a greater tendency for straininduced crystallization.
    Zusätzliches Material: 7 Ill.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 87
    Digitale Medien
    Digitale Medien
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 27 (1987), S. 1221-1228 
    ISSN: 0032-3888
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Physik
    Notizen: The transesterification reaction of molten ethylene and vinyl alcohol copolymers (EVA), in presence of paraffinic alcohols and basic catalysts, leads to high conversion of the ester groups to secondary alcohol in both discontinuous and continuous processing equipment. Various kinds of alcohols and two different catalysts were used. Sodium methoxide is a powerful catalyst for the equilibrated transesterification reaction, but we also observed side reactions, such as cross-linking with low-molecular-weight alcohols and hydrolysis of the catalyst followed by partial saponification of the EVA. Kinetic studies were performed in the presence of dibutyltin dilaurate, an efficient catalyst without any side reactions. The solubility of the main alcohol reagents was verified by diffusion measurements. The general reaction scheme and the related kinetics, corresponding to a homogeneous system, lead to a fair evaluation of the rate constants.
    Zusätzliches Material: 9 Ill.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 88
    Digitale Medien
    Digitale Medien
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 27 (1987), S. 1252-1257 
    ISSN: 0032-3888
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Physik
    Notizen: The mechanical properties of polyurethane-unsaturated polyester interpenetrating polymer networks (IPNs) that were prepared by reaction injection molding (RIM) process were measured with variations In composition, cross-link density, and relative reaction rate. From dynamic mechanical analysis (DMA), it was found that the two component polymers had a good compatibility over the whole composition range. The tensile strengths of the blends were greater than those of the pure components and had a maximum value at 50/50 composition. The modulus of elasticity and surface hardness decreased and the impact strength increased as the polyurethane content was increased, but the changes were not high at low polyurethane content, below 50%. For higher cross-link density, the compatibility was enhanced and the mechanical properties were improved. When the reaction rates of the components were different, some extent of phase separation was found in DMA and the properties were affected adversely.
    Zusätzliches Material: 7 Ill.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 89
    Digitale Medien
    Digitale Medien
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 28 (1988), S. 1152-1155 
    ISSN: 0032-3888
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Physik
    Notizen: Effects of absorbed moisture on degradation behavior of high nitrile barrier polymers were monitored using thermogravimetric analysis techniques. Non-modified and 10 percent rubber modified samples were heated isothermally at nitrile processing temperatures (200°C to 240°C) in air and nitrogen environments. Degradation was evaluated in terms of weight loss as a function of heating time and sample coloration. It was determined that complete removal of moisture, as well as high moisture concentration, contribute to increased degradation at the temperatures evaluated. Moisture levels in the range of 0.15 to 0.5 percent were found to minimize degradation. Heating environment, time, temperature, and rubber modification were also found to influence thermal stability.
    Zusätzliches Material: 7 Ill.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 90
    Digitale Medien
    Digitale Medien
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 28 (1988), S. 1167-1172 
    ISSN: 0032-3888
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Physik
    Notizen: High density polyethylene has been chlorinated by three different methods: in suspension and in solutions of two different solvents. Carbon-13 NMR and infrared analysis show that chlorination in chlorobenzene solution leads to statistically random distribution while chlorination in suspension gives highly blocky substitution. An intermediate distribution was obtained by chlorination in tetrachloroethane solution.
    Zusätzliches Material: 4 Ill.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 91
    Digitale Medien
    Digitale Medien
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 28 (1988), S. 1198-1202 
    ISSN: 0032-3888
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Physik
    Notizen: The energy stored in polystyrene after plastic deformation is measured by the differential scanning calorimetry (DSC) technique. Similar to metals, the stored energy increases with plastic straining, first rapidly, and then more slowly, and finally the stored energy seems to approach a saturation value (about 1 cal/gram). By comparing to the plastic work done, the fraction stored ranges from 30 percent after 10 percent compression to 10 percent after 60 percent compression. The fraction is about twice as large as that of copper. The release of stored energy has two distinct parts, one below Tg and the other above Tg. Most of the strain recovery seems to accompany the second part. By using the Kissinger plot, the second part has an activation energy, of 142 kcal/mole which is about 10 percent larger than that of compressive strain recovery.
    Zusätzliches Material: 6 Ill.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 92
    Digitale Medien
    Digitale Medien
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 28 (1988), S. 1219-1226 
    ISSN: 0032-3888
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Physik
    Notizen: A trial and error approach reflects the state of the art in reaction injection molding. Material and process parameters determine the “moldability” of a specific system in a particular application. The concept of “molding areas” on the critical parameters plane can be extended form thermoplastic injection molding (TIM) to reaction injection molding (RIM).In this work moldability diagrams for the filling and curing stages of a RIM process are obtained based on a simplified engineering approach. The key process parameters chosen for the filling stage are initial material temperature and filling time. In the curing stage, the critical parameters are considered to be mold wall temperature and demold time. Experimental results obtained on a laboratory-scale RIM machine on a Crosslinking polyurethane system are used to check the validity of the predicted molding areas. The agreement obtained is satisfactory considering the broad range of processing parameters used.
    Zusätzliches Material: 5 Ill.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 93
    ISSN: 0032-3888
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Physik
    Notizen: The microstructure of injection molded bars (2.9 and 5.8 mm thick) of thermotropic liquid crystalline poly(p-hydroxy-benzoic acid-co-ethylene terephthalate) has been studied by SEM on samples etched with n-propylamine, SEM fractography, DSC, IR, ESCA, WAXS and polarized microscopy. The 2.9 mm bar consists of three different layers: a highly oriented surface skin, an oriented intermediate layer and a non-oriented core. The 5.8 mm bar has a more complex microstructure and is composed of five different layers: a highly oriented surface skin, an oriented layer just beneath, a non-oriented layer, another oriented layer and a non-oriented core. The thicknesses of the different layers vary, significantly, with distance from the mold gate. The thickness of the core increases, significantly, with increasing distance from the mold gate at the expense of the oriented layers. The structure within the different morphological layers is not perfectly uniform. Tensile testing demonstrated the mechanical anisotropy of the surface material (a ratio of almost 20 between the longitudinal and transverse moduli) and the isotropy of the central core material.
    Zusätzliches Material: 15 Ill.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 94
    Digitale Medien
    Digitale Medien
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 28 (1988), S. 1264-1269 
    ISSN: 0032-3888
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Physik
    Notizen: Rolling-drawing is a simple, effective, solid state processing technique for manufacturing high strength and high modulus oriented polymer sheet products. The process is capable of increasing the tensile modulus and strength of polypropylene by more, than an order of magnitude with inexpensive equipment and straight forward controllable techniques. This paper gives an overview of the rolling-drawing of polypropylene. It is intended to answer the following questions. What is rolling-drawing? What changes in tensile properties can be expected as a result of this process? What deformation processes occur during rolling-drawing? What are the processing variables and how do these variables relate to the deformation ratio achieved by rolling-drawing? A tensile flow stress relationship was formulated from experimental data for oriented polypropylene. This constitutive equation, estimates the flow stress (or yield stress) of the polymer as a function of deformation ratio, strain rate and temperature. Since stretching was found to provide a significant portion of the deformation during the rolling-drawing process a Hoffman-Sachs computer analysis was written to predict plastic deformation and drawing forces in the stretch zone. The results of experimentation and the analysis are briefly compared in this paper.
    Zusätzliches Material: 8 Ill.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 95
    ISSN: 0032-3888
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Physik
    Notizen: An extrusion-grade of high density polyethylene (HOPE) (3 ethyl groups per 1000 carbons) has been divided into 16 fractions by preparative GPC and selective p-xylene extraction. The fractions, with molecular weights ranging from 900 to 1,000,000, have been studied by IR spectros-copy, DSC, WAXS, polarized microscopy, and small-angle light scattering (SALS), The average degree of chain branching (percent C2H5) is 0.5 percent for the part of the sample having a molecular weight lower than 10,000 and it decreases monotonically with increasing molecular weight, finally approaching 0.1 percent C2H5. A crystallinity depression with respect to linear PE equivalent to 20 percent/(percent C2H5) is recorded for all samples except for the very low molecular weight samples for which the crystallinity depression is much larger (30 to 35 percent/ (percent C2H5)). The unit cell volume increases with increasing percent C2H5, presumably due to the inclusion of ethyl groups in the crystals as interstitlals at 2gl kinks. The concentration of ethyl groups in the crystals (∊c) unanimously follows the relationship: ∊c(percent) = 0.32 + 0.25 log(percent C2H5) except for the low molecular weight fractions which have significantly lower values for ∊c. Our admittedly speculative explanation for this major discrepancy between high and low molecular weight samples is based on the idea that segments with ethyl groups close to chain ends have a greater difficulty in crystallizing than segments containing ethyl groups located at positions far from the chain ends. The fractions obtained from the extrusion-grade HDPE show a solidification temperature depression with respect to linear PE which can only be explained by the presence of chain branches in these samples. The depression is particularly pronounced for the low molecular weight samples as is expected from the data on molecular structure. Well-developed non-banded spherulites are observed in rapidly cooled (crystallized at about 35 K supercooling), low molecular weight samples (6,000 〈 Mw 〈 8,000)from the extrusion-grade HDPE in contrast to the axialites observed in linear PE of the same molecular weight and thermal treatment. This discrepancy in morphology has been related to the presence of ethyl groups in the extrusion grade HDPE fractions. Higher molecular weight samples (20,000 〈 Mw 〈 1,000,000)from the extrusion-grade HDPE and linear PE both display well-developed banded spherulites of similar nature as is expected due to the similarity in molecular structure of the two sets of sample.
    Zusätzliches Material: 18 Ill.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 96
    Digitale Medien
    Digitale Medien
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 28 (1988), S. 1066-1070 
    ISSN: 0032-3888
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Physik
    Notizen: In this work, a concept of distributed damage, including its inception and propagation, was applied to creep induced buckling of specimens prepared from high density polyethylene (HDPE). Using a kinetic relationship for damage accumulation, an integral equation for the front of the damage zone was derived. A time parameter associated with the inception of the damage front was obtained. The motion of the front was approximated for small times. Long time estimation was obtained using an assumption for a shape of the damage distribution. These results enabled us to review reported experimental results on creep induced buckling using a new insight into the relationship between applied load and time to buckle.
    Zusätzliches Material: 6 Ill.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 97
    Digitale Medien
    Digitale Medien
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 28 (1988), S. 1095-1106 
    ISSN: 0032-3888
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Physik
    Notizen: We present a basic study of the thermal, dielectric, Theological, and mechanical properties of hydroxybenzoic acid-ethylene terephthalate copolymers (PHB-PET). It is argued that they have two-phase structures, one rich in ethylene terephthalate (PET) and one rich in hydroxybenzoic acid (PHB). Polystyrene (PS) is immiscible in 60% PHB-PET (60-PHB-PET) blends. Polycarbonate (PC) is partially miscible with the high PET phase of 60-PHB-PET. PET seems completely miscible with this high PET phase. Shear viscosity measurements on blends indicate that 60-PHB-PET gives rise to large reductions of viscosity. Extrudates and melt-spun fibers have been prepared. The phase morphologies of low PHB-PET blends as determined by scanning electron microscopy indicate ellipsoids or long fibrils of the, 60-PHB-PET in PS or PC matrices. High extrusion rates and melt spinning produce fibrillar structures. The mechanical properties of films, extrudates, and melt-spun fibers were studied. Blends with 10% 60-PHB-PET exhibited significant increases in Young's modulus and tensile strength.
    Zusätzliches Material: 29 Ill.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 98
    Digitale Medien
    Digitale Medien
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 28 (1988) 
    ISSN: 0032-3888
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Physik
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 99
    Digitale Medien
    Digitale Medien
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 28 (1988), S. 1145-1151 
    ISSN: 0032-3888
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Physik
    Notizen: The kinetics of the activated anionic polymerization of caprolactam to nylon-6 and its copolymers has been studied. Nylon-6 block copolymer and nylon-6 were prepared at various initial reaction temperatures (140°C to 165°C) by anionic polymerization in an adiabatic dewar flask. Different concentrations of poly(ethylene oxide) (PEO) in 4,4′-diphenyl methane diisocyanate (MDI)-capped PEO and 1 mole percent MDI, in a caprolactam solution, were used as the activators with the catalyst, the sodium salt of caprolactam. The kinetics of the reaction were analyzed from an adiabatic temperature rise. A new method was applied to determine the rate parameters. The activation energy, Ea, of nylon-6 and nylon-6 block copolymers were found to be 22 kcal/mole. The collision frequency factor, Ao, steadily decreased and the autocatalytic constant, Bo, decreased to a constant value of 16 with the introduction of PEO. However, it was found that the order of reaction, n, was almost a constant value at the second order for all experiments.
    Zusätzliches Material: 5 Ill.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 100
    Digitale Medien
    Digitale Medien
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 28 (1988), S. 1173-1181 
    ISSN: 0032-3888
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Physik
    Notizen: Chlorination of high density; polyethylene results in polymers which consist of unmodified methylene units and chlorinated methylene co-units. The effect of the concentration and distribution of chlorinated units on the solid state structure has been examined by thermal, wide angle X-ray diffraction and dynamic mechanical analysis. As the substitution becomes more random, the crystallinity, crystallite size, and crystalline perfection decrease for a given chlorine content. The chlorinated units are shown to be capable of co-crystallizing, and the concentration of chlorine in the crystalline phase increases as the distribution is made more random. Concurrently, the chlorine concentration of the amorphous phase decreases. Segregation of chlorine into the amorphous regions is most efficient when the substitution is blocky.
    Zusätzliches Material: 13 Ill.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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