Publikationsdatum:
2013-09-27
Beschreibung:
Author(s): J. Z. Sun, S. L. Brown, W. Chen, E. A. Delenia, M. C. Gaidis, J. Harms, G. Hu, Xin Jiang, R. Kilaru, W. Kula, G. Lauer, L. Q. Liu, S. Murthy, J. Nowak, E. J. O’Sullivan, S. S. P. Parkin, R. P. Robertazzi, P. M. Rice, G. Sandhu, T. Topuria, and D. C. Worledge It is convenient to define the spin-torque switching efficiency in nanostructured magnetic tunnel junctions as the ratio between the free-layers thermal activation barrier height E b and the threshold switching current I c 0 . Recent device exploration has led to occasional observations of spin-torque i... [Phys. Rev. B 88, 104426] Published Thu Sep 26, 2013
Schlagwort(e):
Magnetism
Print ISSN:
1098-0121
Digitale ISSN:
1095-3795
Thema:
Physik
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