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  • Articles  (44)
  • 72.20  (24)
  • 78.20  (20)
  • 2010-2014
  • 1980-1984  (44)
  • 1950-1954
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (44)
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  • Articles  (44)
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (44)
  • Physics  (52)
  • 1
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    Applied physics 23 (1980), S. 303-309 
    ISSN: 1432-0630
    Keywords: 42.80 ; 61.70 ; 61.80 ; 78.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A significant contribution to the degradation of GaAs-based lasers and light-emitting diodes arises from the formation of so-called dark line defects. It is shown that these defects are accumulations of non-radiative recombination centres around dislocations. The centres are identified as As vacancies, which are emitted by climbing dislocations, concomitantly with the absorption of Ga interstitials. From scanning deep-level transient spectroscopy observations it is concluded that the so-called DX centres are Ga interstitials. The driving force for dislocation climb and thus for dark-line-defect formation is a supersaturation of Ga interstitials originating from the growth of the GaAs crystals under Ga-rich conditions as a consequence of the high volatility of As. Phenomena in other III–V compound semiconductors related to the formation of dark line defects in GaAs are also discussed.
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  • 2
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    Applied physics 24 (1981), S. 55-59 
    ISSN: 1432-0630
    Keywords: 78.20 ; 42.80 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The fundamental absorption edge of evaporated WO3 films is investigated. The optical gap of the virgin film is estimated to be 3.41 eV at room temperature and it decreases with increase of annealing temperature up to 200°C. Annealing at 300°C leads to change in the spectral shape, which is caused by crystallization. For the films annealed at 200°C, temperature coefficient of the optical gap is estimated to be −2×10−4 eV/K and the slope of Urbach's tail is found to be independent of measuring temperature up to 200°C. With electrolytic coloration, shift of the optical gap toward higher energy is observed. Magnitude of this shift is estimated to be 0.05 eV at the color center concentration of 7.5×1021 cm−3 when H+ electrolyte is used. If Li+ electrolyte is used, the magnitude of this shift is about three times larger than in the case of H+ electrolyte. This fact is interpreted by a small change in the host matrix structure owing to the injection of proton or Li+ during coloration.
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  • 3
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    Applied physics 30 (1983), S. 189-193 
    ISSN: 1432-0630
    Keywords: 72 ; 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The parallel and transverse components of diffusion constants of electrons in CdTe have been computed for fields of 30, 40, and 50 kV/cm using the Monte Carlo method. Results are presented for the velocity autocorrelation function and for the ac diffusion constants for two models of energy band structure and scattering constants, used earlier in the literature. The diffusion constants as obtained from the two models are significantly different, but none are in agreement with the available experimental results.
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  • 4
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    Applied physics 33 (1984), S. 107-111 
    ISSN: 1432-0630
    Keywords: 72.20 ; 79.20 ; 81
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The transmitted energy density in thin single Si crystal, wafers is measured atλ=1.06 μm as a function of the incident energy density for a Nd laser pulse of 30 ns duration. Non-linear effects begin to become important at about 0.3 J/cm2. The contribution due to free-carriers is separated from the interband one by using measurements made at low energy density and at different sample temperatures in the 20°–150 °C range. The time dependence of the free-carrier concentration and of the lattice temperature is computed for different values of the Auger constant. The experimental data in the 0.2–2.5 J/cm2 energy density range are fitted with an Auger constant of 10−30 cm6s−1.
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  • 5
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    Applied physics 35 (1984), S. 9-12 
    ISSN: 1432-0630
    Keywords: 72.20 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The kinetics of the Staebler-Wronski effect ina-Si:H were investigated experimentally. The rate of recovery from the illuminated state B to the annealed state A was observed at various temperatures in undoped,n- andp-dopeda-Si:H. The data can be characterized by a thermally activated relaxation time with an activation energy decreasing with increasing doping concentration. The results are compared with previous data and existing models.
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  • 6
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    Applied physics 27 (1982), S. 233-238 
    ISSN: 1432-0630
    Keywords: 78.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The reflectance of metal surfaces with sinusoidal roughness of different periods and depths has been investigated experimentally. The results show clearly that the surface structure can be used to modify the optical properties of metal surfaces at different wavelengths. With a proper choice of groove depth to period ratio, nickel or chromium coatings on gratings have low reflectance in the short wavelength region, but achieve high reflectance in the infrared region. A solar absorptance as high as 93% has been obtained from such a surface. The surfaces are thought to be representative for randomly rough surfaces provided proper correlation length and height variation are chosen. Further, as the absorber is made of a single metal surface, it could be highly temperature resistant.
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  • 7
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    Applied physics 29 (1982), S. 29-32 
    ISSN: 1432-0630
    Keywords: 66 ; 72.20 ; 77.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The dielectric properties of titanium doped magnesium oxide (Ti/MgO) and gadolinium doped magnesium oxide (Gd/MgO) single crystals have been measured at room temperature over the frequency range 500 Hz to 50 kHz. For both the crystals, the dielectric constantɛ′ is found to be independent of frequency and the ac conductivity Re{σae} agrees well with the relation Re{σae}∫Ω n ,Ω being the angular frequency with n=0.84±0.05 for Ti/MgO andn=0.81±0.03 for Gd/MgO. The data fits well with the relationɛ″∫Ω n−1(n〈1),ɛ″ being the dielectric loss factor. An explanation may be found on the basis of the hopping phenomenon.
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  • 8
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    Applied physics 29 (1982), S. 39-44 
    ISSN: 1432-0630
    Keywords: 77 ; 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Measurements of the dielectric properties of AgTlSe2 in the solid and liquid states were carried out in a wide range of frequencies and temperatures. The material displayed dielectric dispersion, and a loss peak was observed. Cole-Cole diagrams have been used to determine the distribution parameter (a) and the molecular relaxation time (Τ). The process of dielectric relaxation (loss) and ac conduction was attributed to the correlated barrier hopping model suggested by Elliott for amorphous solids, where two carriers simultaneously hop over a barrier between charged defectD + andD − states.
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  • 9
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    Applied physics 29 (1982), S. 169-172 
    ISSN: 1432-0630
    Keywords: 78.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract By holographic recording in LiNbO3-Fe and LiTaO3-Fe crystals a new light scattering effect has been observed with an optical indicatrix along the optical axis. The kinetics of the light scattering depends on the intensity, wavelength as well as the polarization of the incident light The holographic volume grating is created by the interference of an incident light and light scattered by crystal inhomogeneities.
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  • 10
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    Applied physics 21 (1980), S. 339-343 
    ISSN: 1432-0630
    Keywords: 42.80 ; 78.20 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A series of experiments for growing epitaxial PLZT thin films has been made with rf sputtering. X-ray and electron diffraction analyses confirm that the fabricated films grow epitaxially on SrTiO3 and MgO crystals. A good transparency in the region above 0.4 μm to infrared with good ferroelectric properties is obtained. Propagation loss of He−Ne laser light is less than 6 dB/cm, and the PLZT thin film is a promising candidate for the optical modulator and other functional elements for integrated optics.
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  • 11
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    Applied physics 22 (1980), S. 11-13 
    ISSN: 1432-0630
    Keywords: 77.20 ; 78.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We report the calculation of matrix element effects in the frequency dependent dielectric function,ε 2 ω, for insulatingd-band perovskites. Analytical expressions are obtained forε 2 ω which yield results that are in good agreement with data for SrTiO3. These results also provide a direct comparison betweenε 2 ω and the joint density-of-states. The joint density-of-state approximation is found to be particularly poor due to unusually large transition matrix element effects.
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  • 12
    ISSN: 1432-0630
    Keywords: 78.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The optical properties of strontium fluoride thin films prepared by evaporation indicated the inhomogeneity of these films. This is attributed to the difference in the measured refractive indexn′ 1 of the film layer adjacent to air and that of the film layer adjacent to the glass substrate,n″ 1. It was also found that the refractive indicesn′ 1 andn″ 1 for fresh strontium fluoride films are independent on the film thickness. The optical properties of strontium fluoride thin films showed no sign of change upon aging within 3–4 weeks.
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  • 13
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    Applied physics 23 (1980), S. 37-40 
    ISSN: 1432-0630
    Keywords: 72.20 ; 73.60 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Electron Hall mobilities were measured on a series of intentionally compensated vapor phase epitaxy (VPE) GaAs layers. Using Sn and Zn as dopants, compensation ratiosK=(ND+NA)/(ND-NA) as high as 50 were obtained. Already for samples with the lowestK values the 300 K mobilities are higher than the 77 K values. In the range 20〈T〈100 [K] the data may be represented by μ∼T α with α increasing from 0.6 to 1.1 with compensation. The experimental μ values are smaller than those predicted from current models in all cases. It appears that scattering at ionized impurities is the dominant process also at temperatures well above 77 K, and that this scattering process is quantitatively underestimated in current models.
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  • 14
    ISSN: 1432-0630
    Keywords: 72.20 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An analytical expression of the modified form of the Einstein relation in heavily doped semiconductors in which Gaussian band tails are formed near the lower limit of heavy doping is derived for studying the temperature dependence of the diffusivity-mobility ratio of the carriers in such semiconductors. It is found that, with increasing temperature from relatively low values, the ratio first increases in a nonlinear manner and then decreases till, at high temperatures, it approaches its value corresponding to the non-degenerate condition resulting in a peak over a narrow range of temperatures.
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  • 15
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    Applied physics 24 (1981), S. 197-200 
    ISSN: 1432-0630
    Keywords: 72.20 ; 73 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The diffusion behavior of implanted arsenic in polycrystalline silicon was investigated, using backscattering and electrical measurements. The diffusion coefficient isD=8.5×10−3 exp (−2.74/kT) for polycrystalline silicon deposited on freshly-etched silicon andD=1.66 exp (−3.22/kT) for the deposition on silicon having natural oxide. At the interface to the single-crystalline silicon, a pile-up of arsenic occurs, which depends also on the surface treatment prior to the deposition of the polycrystalline silicon.
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  • 16
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    Applied physics 25 (1981), S. 49-56 
    ISSN: 1432-0630
    Keywords: 42.65 ; 78.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Four-wave mixing with two circularly polarized counter-propagating waves inducing a helical birefringence structure can be used to measure a number of material parameters of a liquid crystalline medium. Application to a cholesteric substance is particularly interesting. A resonant effect is expected when the induced helix has a pitch coinciding with the natural helical pitch of the medium towards the isotropic → cholesteric transition. Field-induced shift in the transition temperature is also expected.
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  • 17
    ISSN: 1432-0630
    Keywords: 78.20 ; 78.30 ; 78.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thin films of aggregate color centers have been produced by electron and ion irradiation of bulk alkali halide crystals. The transverse spatial distribution of the centers was controlled on a submicron scale using electron lithography. Photochemical hole burning has been accomplished for the first time in a thin film of color centers, using the 6070 Å zero-phononN 1 line produced by ion and electron irradiation of NaF crystals.
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  • 18
    ISSN: 1432-0630
    Keywords: 85.30 ; 72.20 ; 72.15
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An attempt is made to study the effect of a quantizing magnetic field on the effective electron mass in degeneraten-type narrow-gap semiconductors at low temperatures. It is found, takingn-Hg1−x Cd x Te as an example, that the effective electron mass shows an oscillatory magnetic-field dependence as is expected because of the dependence of the effective mass in degenerate non-parabolic bands on Fermi energy which oscillates with changing magnetic field. The amplitude of oscillations is, however, found to be significantly influenced by the alloy composition whereas the period is found to be independent of the band non-parabolicity, i.e. of the compositional parameter in ternary semiconductors.
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  • 19
    ISSN: 1432-0630
    Keywords: 42.10 ; 42.60 ; 78.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An investigation was made of the self-induced transparency effect in the semiconductor's exciton region using ultrashort frequency-tunable light pulses and an ultrafast streak camera.
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  • 20
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    Applied physics 30 (1983), S. 105-107 
    ISSN: 1432-0630
    Keywords: 76.30 ; 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract It is shown that the skin effect due to thermal generation of free carriers may affect the ESR signal more than deep center depopulation. Experimental results for 0.33 eV deep Eu2+ donor in CdF2 crystals are presented, to show the way in which the thermal energy of deep centers is deduced from the ESR data.
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  • 21
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    Applied physics 31 (1983), S. 65-70 
    ISSN: 1432-0630
    Keywords: 72.20 ; 72.60 ; 85.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Transient velocity-field characteristics have been computed for GaAs channels having lengths of 0.1, 0.2, 0.5, 1, and 20 μm for electric fields between 1 and 50 kV/cm at 300 K. The results are compared with earlier calculations and the significant features of the computed results are discussed. It is found that the electron motion for all channel lengths and for all fields is significantly affected by collisions. The threshold field for negative differential mobility increases, and the magnitude of the differential mobility decreases with decrease in the length of the sample. The maximum steady-state velocity increases with decrease in the length and may be as high as 5.4×107 cm/s for 0.1 μm samples.
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  • 22
    ISSN: 1432-0630
    Keywords: 72.20
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thermal annealing and light irradiation effects on hole and electron drift mobilities were studied for amorphous Se93.5As6.5 and Se94.3Ge5.7 films by means of a time-of-flight technique. The electron drift mobility and its activation energy show a drastic increase after the heat and light treatments, while the hole drift mobility remains almost unchanged. The change of electron transport is attributed to a relaxation of local structural distortion, which is correlated with relatively shallow localized states. The present experimental results are inconsistent with the prior proposal that electron transport in amorphous selenides is correlated with Se8 ring molecules.
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  • 23
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    Applied physics 33 (1984), S. 1-7 
    ISSN: 1432-0630
    Keywords: 72.20 ; 42.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Harmonic mixing of two alternating electric fields due to a Brownian charged particle in a nonlinear one-dimensional potential of cosine shape is investigated. The dynamics of the system are described by a time dependent Fokker-Planck equation. The appropriate distribution function is obtained by a matrix continued fraction expansion method, which is treated numerically. The dc signal due to mixing is computed for strong thermal fluctuations in all relevant parameter ranges of the pinning potential strength, damping and frequency. The dc signal without fluctuations is discussed separately. Resonance effects are shown in the electric dc field and the additional phase shift, caused by intrinsic relaxation processes.
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  • 24
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    Applied physics 33 (1984), S. 29-35 
    ISSN: 1432-0630
    Keywords: 72.20
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Crystalline samples of Si, GaAs, GaP, InP, and CdTe have been rendered amorphous by bombardment with rare gas ions. DC conductivity and thermopower have been measured as a function of temperature in the interval between 15–500 K. In all cases, electron transport at low temperatures is characterized by non-simply activated processes of the hopping type transport, whereas band transport is observed at higher temperatures. The common and individual features of the different amorphous systems are discussed within the framework of existing transport theories.
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  • 25
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    Applied physics 33 (1984), S. 247-250 
    ISSN: 1432-0630
    Keywords: 71.35 ; 78.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We report changes in the excitonic absorption edge of CuCl caused by intense CO2 laser radiation at 10.6 μm, a wavelength which lies in the infrared (ir) transparency region of CuCl. With an ir intensity of 0.4 GW/cm2 we observe a 100% absorption increase for the Kr+ laser probe wavelength of 406.7nm. The effect scales linearly with ir intensity but does not depend on relative polarization. We explain the effect by laser field induced electroabsorption of the exciton. The magnitude of the effect is closely related to electroabsorption induced by static external fields and by internal electric fields from optical phonons.
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  • 26
    ISSN: 1432-0630
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The temperature dependence of the electrical conductivity and thermoelectric power of liquid selenium with thallium and indium additives have been studied. Large variations appear in the electrical conductivity and thermoelectric power, where Tl and In additives favourp-type conduction.
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  • 27
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    Applied physics 29 (1982), S. 125-132 
    ISSN: 1432-0630
    Keywords: 72.20
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An exact analytical expression for the impact ionisation probability for the main ionisation process in a semiconductor with a Kane-type bandstructure is derived. In a parabolic approximation the integrals involved can be evaluated and the result reduces to the simple relationv i (E)=C(E−E i )2Θ(E−E i ) whereC is a material constant related to the transition matrix elements. From experimental results on the photo-quantum efficiency we can estimate the value ofC for InSb near 77 K, i.e.ħC ≈ 0.012 eV−1. It is concluded that the impact ionisation probability cannot be described with a unit step function at the threshold energy as was done in many theories on the avalanche effect. The (effective) threshold is smooth and a more detailed description, as derived here, is necessary.
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  • 28
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    Applied physics 21 (1980), S. 191-194 
    ISSN: 1432-0630
    Keywords: 78.20 ; 77.50 ; 71.55
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In the paper the dependence of the photorefraction (PhR) in LiNbO3 and LiNbO3−Fe (0.1 wt%, 0.3wt%) crystals on light intensity (within 1016–1023 quanta·cm−2·s−1 at wavelengths 496.5 nm and 600 nm) and temperature (in the region 100–500 K) is studied. For all the crystals the limiting values of PhR are similar and atT=293 K Δn sat lim ≈3·10−3. In LiNbO3 the temperature dependence of PhR in the range 100–500 K requires to take into account at least two trapping centres.
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  • 29
    ISSN: 1432-0630
    Keywords: 07 ; 64 ; 78.20
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The wavelength (λ) and composition (x) modulations are used simultaneously in order to obtain the second derivative ∂2 R/∂λ∂x of the reflectivity. A great sensitivity to a small composition difference is obtained. This method is applied to the determination of the compositional profile for a ternary alloy Mg x Zn1−x Te withx〈0.01. A good agreement is observed with the theoretical profile calculated on the basis of a regular associated solution model.
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  • 30
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    Applied physics 26 (1981), S. 131-138 
    ISSN: 1432-0630
    Keywords: 72 ; 72.20 ; 72.70
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A method has been developed for determining the auto-correlation functions of the fluctuations in the transverse and the parallel components of hot carrier-velocity in a semiconductor by Monte Carlo simulation. The functions for electrons in InSb are determined by this method for applied electric fields of 50 V/cm, 75 V/cm, and 100 V/cm. With increasing value of the time interval the transverse auto-correlation function falls nearly exponentially to zero, but the parallel function falls sharply to a negative peak, then rises to positive values and finally becomes zero. The interval beyond which the auto-correlation function is zero and the correlation time are also evaluated. The correlation time is found to be approximately 1.6 times the relaxation time calculated from the chord mobility. The effect of the flight sampling time on the value of variance of the displacement, is investigated in terms of the low frequency diffusion constants, determined from the variation of the correlation functions. It is found that the diffusion constants become independent of the sampling time if it is of the order of one hundred times the relaxation time. The frequency-dependent diffusion constants are calculated from the correlation functions. The transverse diffusion constant falls monotonically with frequency for all the field strengths studied. The parallel diffusion constant has similar variation for the lower fields (50 V/cm and 75 V/cm) but it has a peak at about 44 GHz for the field of 100 V/cm.
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  • 31
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    Applied physics 26 (1981), S. 157-163 
    ISSN: 1432-0630
    Keywords: 72.20 ; 72.40 ; 79.20
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The thresholds in energy for 5 different impact ionisation processes in InSb at 77K were calculated on the basis of a critical review of the available bandstructure data for largerk values. An accurate threshold value of 243 meV ± a few meV is given for the main process. It is shown that production of light holes by impact ionisation is highly improbable. It is suggested that double ionisation and light hole initiated ionisation may be equally important in interpreting quantum efficiency data. Impact ionisation by L-band electrons may contribute significantly to the avalanche in Gunn domains, explaining the rapid quenching of the latter.
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  • 32
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    Applied physics 26 (1981), S. 171-173 
    ISSN: 1432-0630
    Keywords: 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electrical conductivity and thermoelectric power of CuTlSe2 have been investigated as a function of temperature up to 230 °C above its melting point. In the liquid state the experimental data are analyzed in terms of a model developed for the density of states and electrical transport in solid amorphous semiconductors (Mott, 1970). Positive thermoelectric power suggests a large predominance of holes in electrical conduction. It appears that the conduction is due to holes in extended states near the band edge. It is found that the energy gap has a large temperature coefficient γ=5.5×10−4eV/K.
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  • 33
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    Applied physics 32 (1983), S. 39-43 
    ISSN: 1432-0630
    Keywords: 72 ; 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Monte-Carlo results on the velocity-field characteristics, ac diffusion-constant and thermal-noise voltages are presented for In0.765Ga0.235As0.5P0.5 at 300K. Recently available values of physical constants have been used in the calculations. The values of diffusion constants are close to those of InP but the thermal noise voltages are found to increase faster with the field. The peak velocity is 1.9 × 107 cm/s and the threshold field for negative differential mobility is about 6 kV/cm.
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  • 34
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    Applied physics 32 (1983), S. 63-67 
    ISSN: 1432-0630
    Keywords: 42.80 ; 78.20 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We have measured the changes in the polarization state of a monochromatic (λ=514.5 nm) light beam on reflection at normal incidence by a multilayer dielectric mirror placed in a time-modulated magnetic field. The dominant effect is a Faraday rotationΦ≃3.7×10−10 rad/G. The sensitivity (around 40Hz) obtained is $$ \simeq 6 \times 10^{ - 9} {\text{ rad/}}\sqrt {{\text{Hz}}} $$ which is dominated by the shot-noise limit (100 mW of light power).
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  • 35
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    Applied physics 27 (1982), S. 35-38 
    ISSN: 1432-0630
    Keywords: 42.80 ; 72.40 ; 78.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Undoped tellurium single crystals show at low temperatures (2.2 K) strong photoeffect under submillimeter irradiation. Therefore, tellurium was used as a FIR-detector. For a comparison with other detectors signal-to-noise ratio, response time, and noise equivalent power were determined. Tests were carried out with HCN-laser radiation (λ = 337 μm,≈ν = 30 cm- t). The sensitivity of the Tc-photoconductor is comparable to that of a TGS-bolometer but lower than that of a Ge-bolometer. The Te-detector is much faster than the bolometers.
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  • 36
    ISSN: 1432-0630
    Keywords: 78.20 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Photovoltaicp-n junctions inn-type Pb1−xMn x Sx≦0.04, have been made by sulphur diffusion. Current-voltage and resistance-voltage characteristics have been examined at various temperatures. The spectral responses of the diodes have been measured within the temperature range from 5 to 300 K at a zero bias. From these measurements the energy band gap of Pb1−x Mn x S solid solution has been determined as a function of temperature and manganese content. A phenomenological expression describing the variation of the energy gap of Pb1−x Mn x S with temperature and alloy composition has been proposed.
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  • 37
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    Keywords: 78.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Transmittance measurements were carried out for LiF thin films directly after preparation, then one day, one week, four weeks and six weeks later. The aging effect on the optical properties of the film was thus studied. This showed that the aged LiF films have refractive indices larger than those of fresh films.
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  • 38
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    Applied physics 23 (1980), S. 199-207 
    ISSN: 1432-0630
    Keywords: 42.30 ; 42.40 ; 72.40 ; 78.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Reduced KNbO3 is a photoconductive ferroelectric in which holograms can be recorded by the photorefractive effect. Read-write volume hologram storage and erase sensitivities ofS −1=100 J/cm2 andS −1=84 J/cm2 (S=d(Δn)/d(I0t)‖t=0) have been measured at zero applied electric field, where the charge transport is shown to be due to diffusion of photoexcited electrons. By applying an electric field along thec-axis, the migration length of the photoexcited electrons becomes comparable to the holographic grating spacing. This leads to storage sensitivities comparable to high-resolution photographic plates. Experimental data on storage and erase sensitivity as a function of the grating spacing, applied electric field, writing light intensity and temperature are reported and interpreted on the basis of the theoretical results of Young et al. and Amodei. Changes of the intensity ratio of the writing beams by self diffraction (beam coupling), reflections from surfaces and the residual dark conductivity are assumed to cause experimental results which deviate from the theoretical models. It is shown, that in reduced KNbO3 and other ferroelectric photoconductors having photocarrier transport lengths much larger than the unit cell dimension, photovoltaic currents do not contribute significantly to the build-up of space-charges leading to the photorefractive effect.
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  • 39
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    Applied physics 30 (1983), S. 151-160 
    ISSN: 1432-0630
    Keywords: 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Time dependent generation rate measurements for InSb at 77 K are presented. The direct results are corrected for recombination terms and care is taken to avoid complications due to the pinch effect under avalanche conditions. The results are compared with various theories, and it is shown that an improved version of Dumke's avalanche theory yields a very good description. A simple extension to Shockley's lucky electron theory is presented which also gives good results. It is concluded that only the most energetic electrons, with energies near the threshold energy, contribute significantly to the avalanche process.
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  • 40
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    Applied physics 27 (1982), S. 107-120 
    ISSN: 1432-0630
    Keywords: 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Pulsed Hall-effect experiments onn-type InSb at 77 K, with nanosecond time resolution, at magnetic inductions down to 2 mT and for electric field strengths up into the avalanche regime are reported. Results on mobility are compared with previous experimental data and various theoretical calculations. For the first time also results on the scattering factor as a function of electric field are given. A curious time dependent behaviour of the transverse voltage under avalanche conditions is reported. Along with the development of the avalanche the transverse voltage decreases and may even change sign. This phenomenon is qualitatively explained in terms of the magnetoconcentration effect and the change of contact properties under avalanche conditions.
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  • 41
    ISSN: 1432-0630
    Keywords: 78.20 ; 81 ; 42.80
    Source: Springer Online Journal Archives 1860-2000
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    Notes: Abstract The changes in reflectivity of a silicon surface, irradiated by a green picosecond pulse, are probed during and following that pulse with a spatial resolution of 10 μm. The data indicate the development of a liquid phase, and a resolidification either into a single crystal or an amorphous phase. The latter has a characteristic ring-type pattern, and occurs only at locations where the incident picosecond laser fluence lies between 0.2 and 0.26 J/cm2. The reflectivity data appear to be in good quantitative agreement with a “simple heating” model, in which the electrons and phonons maintain a local thermodynamic equilibrium on a picosecond time scale.
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  • 42
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    Applied physics 35 (1984), S. 145-148 
    ISSN: 1432-0630
    Keywords: 85.30 ; 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A current oscillation phenomenon in SOGICON type Si device fabricated by the use of a planar process is studied. The oscillation is generated in the region between anode and notch which is located at the center on the sample. A considerably high electric field is observed in the notch region. Considering the hot-electron effect due to the high electric field, the mechanism underlying the current oscillation is discussed.
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  • 43
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    Applied physics 28 (1982), S. 109-111 
    ISSN: 1432-0630
    Keywords: 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electrical conductivity and thermoelectric power of AgTlSe2 have been investigated as a function of temperature from 390° C up to 590° C. The experimental data are analyzed in terms of a model developed for the density of states and electrical transport in solid amorphous semiconductors [12]. Positive thermoelectric power suggests a large predominance of holes in electrical conduction. It appears that the conduction is due to holes in localized states near the band edge.
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  • 44
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    Applied physics 28 (1982), S. 45-51 
    ISSN: 1432-0630
    Keywords: 42.10 ; 42.80 ; 78.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Radiation induced losses and the recovery behavior of several optical fibers have been determined by in situ steady state and by pulse measurements in a nuclear reactor. Agreement with the literature was found for Suprasil and Fibropsil core fibers in ionizing radiation, but our results on Suprasil-W core fibers show an appreciably higher radiation hardness of this material than reported elsewhere. Additionally, increased long term losses were observed, when the mixed radiation flux contained a noticeable content of neutrons.
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