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  • Articles  (23)
  • 68.55  (23)
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  • 1980-1984  (23)
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (23)
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (23)
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  • Physics  (23)
  • 1
    Electronic Resource
    Electronic Resource
    Formation of a metallic layer from individual atoms (1984)
    Springer
    Applied physics 33 (1984), S. 213-225 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Adsorption of copper, gold and beryllium on (110), (100), and (211) single-crystal planes of tungsten leads to essentially different work-function changes. It is known from numerous investigations of alkali-metal adsorption on metal substrates that the work-function variation reflects the electronic processes occurring during the formation of the adlayer. It is obvious that copper, gold and beryllium adsorption is accompanied by a wide variety of physical processes different from those appearing in alkali-metal adsorption. The existing experimental data concerning work-function changes induced by copper, gold and beryllium adsorption are compiled. A model is developed, which may explain these changes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00614661
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  • 2
    Electronic Resource
    Electronic Resource
    TEM image contrast from antiphase domains in GaAs: Ge(001) grown by MBE (1984)
    Springer
    Applied physics 34 (1984), S. 231-236 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Antiphase domains occur in thin GaAs epitaxial films grown on Ge(001) by molecular beam epitaxy. The domains have been imaged by transmission electron microscopy using 200-type reflections in dark field. The carefully chosen imaging conditions with convergent illumination ensure that doubly diffracted beams from a pair of first order Laue zone discs contribute to the singly diffracted 200-type beams. The three Bragg reflections may add in or out of phase to give domains in either light or dark contrast depending on their polarity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616577
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  • 3
    Electronic Resource
    Electronic Resource
    Characterisation of the interface between GaAs: Cr substrates andn-type epitaxial GaAs layers by infrared multiple interference analysis (1984)
    Springer
    Applied physics 35 (1984), S. 27-34 
    Details
    ISSN: 1432-0630
    Keywords: 07.65G ; 42.85 ; 68.48 ; 68.55 ; 73.60F ; 78.30 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Infrared reflectivity measurements on vapour phase grownn-GaAs epitaxial layers (n=7×1016...5×1018 cm−3) deposited on semi-insulating GaAs:Cr substrates show interference structures whose strength cannot be explained by the interference pattern of a simple two layer system. Assuming a third very thin (0.4 μm) interfacial layer it is possible to describe the experimental results. For Te doping the carrier concentration in the interfacial film is higher than in the volume of the epitaxial layer; it is lower for Sn doping. The results of this nondestructive optical method were confirmed by conductivity measurements while etching the sample. The origin of the interfacial layer is discussed in terms of non-steady state conditions at the beginning of the epitaxial growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620296
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  • 4
    Electronic Resource
    Electronic Resource
    Strain analysis and optical characterization of LPE InGaAsP laser-confining layers (1982)
    Springer
    Applied physics 27 (1982), S. 213-218 
    Details
    ISSN: 1432-0630
    Keywords: 71.25 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The compositional dependence of lattice parameters and strains induced by lattice mismatch of liquid phase epitaxial (LPE) In1−x Ga x AS y P1−y /InP with smallx andy are studied. The measured elastic strain is proportional to the lattice mismatch within certain critical limits; as much as ∼78% of the mismatch strain is found to be accommodated elastically under both compression and tension. The near-band edge absorption and photoluminescence measurements yield the free electron and hole recombination probability and the compositional dependence of the energy gap at low temperature. The influence of the lattice mismatch on the optical properties is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00619082
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  • 5
    Electronic Resource
    Electronic Resource
    Electron mobility in compensated VPE GaAs films (1980)
    Springer
    Applied physics 23 (1980), S. 37-40 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 73.60 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Electron Hall mobilities were measured on a series of intentionally compensated vapor phase epitaxy (VPE) GaAs layers. Using Sn and Zn as dopants, compensation ratiosK=(ND+NA)/(ND-NA) as high as 50 were obtained. Already for samples with the lowestK values the 300 K mobilities are higher than the 77 K values. In the range 20〈T〈100 [K] the data may be represented by μ∼T α with α increasing from 0.6 to 1.1 with compensation. The experimental μ values are smaller than those predicted from current models in all cases. It appears that scattering at ionized impurities is the dominant process also at temperatures well above 77 K, and that this scattering process is quantitatively underestimated in current models.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00899568
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  • 6
    Electronic Resource
    Electronic Resource
    Planar optical coupling elements for multimode fibers with two-step ion migration process (1981)
    Springer
    Applied physics 24 (1981), S. 61-63 
    Details
    ISSN: 1432-0630
    Keywords: 42.82 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An electric field assisted two-step ion migration process in soda-lime glass plates has been used to produce optical couple waveguides with semicircular and circular cross sections. The radius and the numerical aperture of the guides are approximately the same as those of the graded index multimode fibers. A new coupler structure, the edge reflecting element, which could be used as an integrated demultiplexer in wavelength division multiplexing, has been fabricated. The loss spectrum of the waveguides is analyzed and a theoretical treatment of the ion concentrations is given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00900399
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  • 7
    Electronic Resource
    Electronic Resource
    Dynamics of laser crystallization in amorphous Ge films (1981)
    Springer
    Applied physics 25 (1981), S. 91-93 
    Details
    ISSN: 1432-0630
    Keywords: 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In situ time- and space-resolved transmission measurements have been used to investigate the crystal growth during laser irradiation of amorphous Ge films. For dwell times longer than 5 ms, microcrystallization processes comparable to conventional thermal annealing are observed, whereas for irradiation times shorter than 5 ms, shell like crystallites, 20 μm long, are obtained. The results from the pulsed measurements agree with corresponding experiments performed under cw-annealing conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00901278
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  • 8
    Electronic Resource
    Electronic Resource
    Depth of origin of sputtered atoms (1981)
    Springer
    Applied physics 25 (1981), S. 307-310 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 ; 68.55 ; 61.80 ; 34
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Estimates are given for the distribution of the depth of origin of sputtered atoms in the low-fluence limit, as well as the corresponding distribution of atoms sputtered into a given energy interval. The former distribution is well described by an exponential profile, with the characteristic depth being consistent with previous results. The latter distribution is characterized by an energy-dependent depth scale and a shape that varies from exponential at low sputtered-atom energies to inverse-power form at higher energies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00902988
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  • 9
    Electronic Resource
    Electronic Resource
    Dynamic RHEED observations of the MBE growth of GaAs (1984)
    Springer
    Applied physics 34 (1984), S. 179-184 
    Details
    ISSN: 1432-0630
    Keywords: 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Detailed measurements have been made of the specular beam intensity in RHEED patterns from static and growing GaAs surfaces. The basic parameters investigated were substrate temperature and electron beam azimuth. The results have provided further understanding of growth dynamics and surface disorder, respectively. There is a significant trend away from two-dimensional growth at the higher temperatures, which also correspond to more Ga-rich surface structures. Conversely, surface disorder is apparently greater during growth at the lower temperatures, where the structure is As-rich. The static As-stable 2×4 surface is, however, the most ordered and the most closely two-dimensional. It has also been shown that ordered, two-dimensional growth can be initiated from excess Ga adatom populations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616915
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  • 10
    Electronic Resource
    Electronic Resource
    Controlled doping of rf sputtered germanium films (1984)
    Springer
    Applied physics 34 (1984), S. 117-121 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Germanium films have been rf sputter deposited on a variety of substrates. A new techniques has been developed to control doping concentrations of the films at predetermined levels for bothp-type as well asn-type films. The hole concentrations of these films could be varied from 1015 to 2×1018/cm3 while the electron concentrations could be varied from 1015 to 5×1017/cm3 using this technique. Transmission electron microscope studies have been made to study the crystalline quality of the films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00614763
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  • 11
    Electronic Resource
    Electronic Resource
    Growth kinetics of Si-molecular beam epitaxy (1982)
    Springer
    Applied physics 28 (1982), S. 129-135 
    Details
    ISSN: 1432-0630
    Keywords: 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Growth mode, surface morphology, crystal perfection and growth rate of siliconmolecular beam epitaxy films were observed as function of temperature (450°–950°C), silicon flux density (8×1014−8×1015cm2/s) and surface orientation (111, 110, 100). Within the varied parameters growth proceeds by the two-dimensional growth mode via the lateral motion of atomic steps originating from the slight misorientation of commercially available substrates (typically 0.25°). Single crystalline films with high lattice perfection and smooth surfaces result from this growth mode. The growth rate — linearly dependent on Si-flux density and independant of temperature and orientation — indicates a condensation coefficient near unity. An atomic step flow model on the basis of the Burton-Cabrera-Frank theory explains this behaviour by mobile adatoms with low activation energy of diffusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617144
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  • 12
    Electronic Resource
    Electronic Resource
    Al reaction with SiO2 an auger electron spectroscopy and energy loss spectroscopy study (1982)
    Springer
    Applied physics 28 (1982), S. 247-250 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60 ; 79.20 ; 82.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Evidence for a reaction between aluminium and SiO2 film is presented using Auger electron spectroscopy (AES) and low-energy electron-loss spectroscopy (ELS) techniques. This reaction is studied “in situ” during the manufacture of metal insulator semiconductor devices (MIS), under ultra-high vacuum conditions (UHV). A reduction of the SiO2 film upon aluminization occurs, even at room temperature, giving rise to a complex interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618702
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  • 13
    Electronic Resource
    Electronic Resource
    Optical waveguides on SiO2 substrates prepared by Pb−Si counterdiffusion (1980)
    Springer
    Applied physics 21 (1980), S. 159-162 
    Details
    ISSN: 1432-0630
    Keywords: 42.82 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Surface layers of the optimal composition of PbO0.5SiO2 0.5 were prepared on fused quartz substrates by Pb-Si counterdiffusion and their properties were studied experimentally. Prism coupling experiments have shown that these layers can be used as low-mode optical waveguides of good quality.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00900678
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  • 14
    Electronic Resource
    Electronic Resource
    Low-power multi-pulse laser annealing of α-Ge (1983)
    Springer
    Applied physics 30 (1983), S. 161-167 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In this paper we want to show by means of Reflection High Energy Electron Diffraction (RHEED) techniques that the recrystallization processes taking place on amorphous germanium films irradiated with low-power superimposed ruby laser pulses occur gradually. Furthermore, in implanted α-Ge films the amorphous-crystalline front moves from the surface of the specimen towards the substrate, while the opposite occurs for glow-discharge deposited films. Moreover, electron microscope observations carried out with a double-stage carbon replica technique at different depths in the specimen show that defect migration is one of the competitive mechanisms in low-power laser annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620535
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  • 15
    Electronic Resource
    Electronic Resource
    Experimental setup for transmission channeling of MeV ions to study edge dislocations (1980)
    Springer
    Applied physics 21 (1980), S. 47-53 
    Details
    ISSN: 1432-0630
    Keywords: 29 ; 34 ; 35 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An experimental facility was built where thin metal (Ta) crystals, with known thickness, could be studied by transmission channeling of MeV ions. The details of obtaining a faint beam (1.5–3.6 MeV) of constant flux (±1%) on the target and normalization of the spectrum of forward scattered particles have been discussed with merits and demerits of various setups used. Preliminary experimental results are reported for measuring dechanneling coefficients from edge dislocations produced by cold work, using H+ ions. The H+ stopping power for Ta in various planar channels and random direction are estimated and using those, it is shown possible to use the setup for thickness measurements of thin crystal films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00886482
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  • 16
    Electronic Resource
    Electronic Resource
    Electrical and photovoltaic properties of Cd1−x Zn x S/p-GaAs heterojunctions (1980)
    Springer
    Applied physics 21 (1980), S. 83-90 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 84.60 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Cd1−x Zn x S/p-GaAs heterojunctions for solar cell applications have been prepared by growing single crystal Cd1−x Zn x S epitaxial layers on (111)GaAs substrates through a vapour phase chemical transport method using the close-spaced geometry and H2 as a transport agent. Electrical and photovoltaic properties of the heterojunctions have been investigated and discussed in connection with the main features of the growth technique. AM1 power conversion efficiencies up to 6.2% have been measured and possible improvements have been examined.
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    URL: http://dx.doi.org/10.1007/BF00886486
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  • 17
    Electronic Resource
    Electronic Resource
    Dynamics of film growth of GaAs by MBE from Rheed observations (1983)
    Springer
    Applied physics 31 (1983), S. 1-8 
    Details
    ISSN: 1432-0630
    Keywords: 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Detailed observations have been made of the intensity oscillations in the specularly reflected and various diffracted beams in the RHEED pattern during MBE growth of GaAs, Ga x Al1−x As and Ge. The results indicate that growth occurs predominantly in a two-dimensional layer-by-layer mode, but there is some roughening, which is enhanced by deviations from stoichiometry and the presence of impurities. In the case of the GaAs (001) −2×4 reconstructed surface a combination of dynamic and static RHEED measurements has provided firm evidence for the presence of one-dimensional disorder features as well as surface steps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617180
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  • 18
    Electronic Resource
    Electronic Resource
    Cadmium deposition on transparent substrates by laser induced dissociation of Cd(CH3)2 at visible wavelengths (1982)
    Springer
    Applied physics 27 (1982), S. 133-138 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 81.15-g ; 82.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The laser initiated formation of Cd-deposits from dimethylcadmium (DMCd) on quartz substrates has been investigated at various wavelengths between 337 and 676 nm. In this range substrate and DMCd are both transparent. The deposition mechanism is initiated by multiphoton dissociation of DMCd molecules adsorbed at the glass substrate and continues by pyrolysis of DMCd molecules at the laser-heated metallic deposit. Metal structures with a resolution below 1 μm have been obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616663
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  • 19
    Electronic Resource
    Electronic Resource
    Formation of palladium silicide by rapid thermal annealing (1984)
    Springer
    Applied physics 35 (1984), S. 141-144 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 81.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The formation of palladium silicide Pd2Si by rapid thermal annealing of Pd layers on silicon has been studied as a function of annealing time (1–60s) in the temperature range 350–500 °C. It is shown that the results found for conventional furnace annealing (long duration, low temperature) can be extrapolated for rapid thermal annealing (shorter time, higher temperature) when taking into account the exact time dependence of the short temperature cycle. The growth rate is essentially diffusion limited and the activation energy is close to 1.1±0.1 eV. Silicide resistivity of about 30–40 Ω cm was obtained for 200–400 nm thick Pd2Si layers formed at 400 °C for a few seconds.
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    URL: http://dx.doi.org/10.1007/BF00616966
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  • 20
    Electronic Resource
    Electronic Resource
    Vanadium oxidation as a result of cw CO2 laser irradiation in atmospheric air (1984)
    Springer
    Applied physics 35 (1984), S. 103-108 
    Details
    ISSN: 1432-0630
    Keywords: 42.60 ; 68.55 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract New results are reported concerning the vanadium oxidation by cw CO2 laser irradiation in air at atmospheric pressure. Particular emphasis is paid both to the initial stage and the development of the oxidation process under the action of the laser radiation. Some aspects are finally discussed concerning the quantitative theoretical interpretation of the experimentally recorded data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620638
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  • 21
    Electronic Resource
    Electronic Resource
    Changes produced in the electrical resistivity of ErH2 thin films when converted to ErH3 due to hydrogen treatment (1984)
    Springer
    Applied physics 35 (1984), S. 263-265 
    Details
    ISSN: 1432-0630
    Keywords: 73.60 ; 68.55 ; 81.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The resistivity of thin films (80–200 Å) of ErH2 increases sharply when heated for 2 h at 300 °C in vacuum in the presence of hydrogen gas at ∼ 10−2 Torr. This confirms that the films, originally metallic conductor, have become converted to semiconducting ErH3 which is in conformity with the structural studies. The negative values of TCR also indicate the semiconducting nature of the hydrogen treated films. Activation energies of the films have been evaluated.
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    URL: http://dx.doi.org/10.1007/BF00617177
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  • 22
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    A TEM study of crystal and domain structures of Nb-Doped 95/5 PZT ceramics (1982)
    Springer
    Applied physics 29 (1982), S. 237-244 
    Details
    ISSN: 1432-0630
    Keywords: 61.10 ; 64 ; 68.55 ; 77.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract 95/5 PZT ceramics with compositions of Pb(Zr1−x Ti x )3+1 wt% Nb2O5 (x=0.025 and 0.04) are studied with TEM. The coexistence of both ferroelectric (F) and antiferroelectric (AF) phases in one ceramic grain at room temperature is confirmed for these two compositions. The AF phase is mainly tetragonal, while a pseudo-cubic arrangement of AF polarization is also possibly present. When the Ti4+ concentration is increased, the F phase becomes predominant. Direct interfaces between F and AF domains can be observed, the former expands at the expense of the latter when bombarded by 200 keV electrons.
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    URL: http://dx.doi.org/10.1007/BF00615074
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  • 23
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    A simple technique to deposit molybdenum thin films (1982)
    Springer
    Applied physics 28 (1982), S. 125-128 
    Details
    ISSN: 1432-0630
    Keywords: 52 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A simple technique is proposed for metallizing nonconductive objects. The technique, which is based on a plasma-induced dissociation of Mo(CO)6 molecules, is inexpensive with no sophisticated instrument needed, and allows us to deposit fine grained, adherent thin films of molybdenum on nonrefractory substrates. It is believed that the technique possesses a variety of potential applications in laboratory works.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617143
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