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  • Articles  (21)
  • 85.30  (21)
  • 2020-2024
  • 1985-1989  (21)
  • 1950-1954
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (21)
  • Political Science
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  • Articles  (21)
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (21)
  • Political Science
  • Physics  (21)
  • 1
    Electronic Resource
    Electronic Resource
    Diffusion of gold in dislocation-free or highly dislocated silicon measured by the spreading-resistance technique (1986)
    Springer
    Applied physics 39 (1986), S. 37-48 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The diffusion of Au in dislocation-free or plastically deformed Si (1011 to 1013 dislocations/m2) was measured with the aid of the spreading-resistance technique. The Au profiles produced indislocation-free Si slices by in-diffusion from both surfaces possess nonerfc-type U shapes as predicted by the so-called kick-out diffusion model. This model is used to calculate the contribution of self-interstitials to the (uncorrelated) Si self-diffusion coefficient,D I SD =0.064×exp(−4.80 eV/kT)m2 s−1, from the present and previous data on the diffusivity and solubility of Au in Si in the temperature range 1073–1473 K. Inhighly dislocated Si the diffusion of Au is considerably faster than in dislocation-free Si. From the erfc-type penetration profiles found in this case, effective Au diffusion coefficients were deduced and combined with data on the solubility of Au in Si. ThusC i eq D i=0.0064 ×exp(−3.93 eV/kT)m2 s−1 was obtained in the temperature range 1180–1427 K, whereC i eq andD i are the solubility and diffusivity of interstitial Au in Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01177162
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  • 2
    Electronic Resource
    Electronic Resource
    The use of amorphous and microcrystalline silicon for silicon heterojunction bipolar transistors (1986)
    Springer
    Applied physics 41 (1986), S. 291-295 
    Details
    ISSN: 1432-0630
    Keywords: 61.40 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The modification of the emitter structure of silicon bipolar transistors results in more freedom in the choice between sometimes conflicting device parameters. The approach followed in this work is the use of an amorphous silicon (a-Si:H) or microcrystalline silicon (μc-Si) emitter, creating a real heterojunction with the crystalline silicon base. Due to the larger bandgap of these emitter materials, the back injection of minority carriers is strongly suppressed in comparison with conventional bipolar transistors. Furthermore, the small temperature coefficient of the current gainβ allows the use of these heterojunction bipolar transistors (HBT) over a wide temperature range. Most likely, the biggest advantage of such HBTs is that a better high-frequency behaviour could be obtained. However, some problems still need to be solved such as the recombination at the emitter-base interface and the high resistivity of the emitter material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616051
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  • 3
    Electronic Resource
    Electronic Resource
    Transient negative photoconductivity in silicon doped with gold (1987)
    Springer
    Applied physics 43 (1987), S. 205-208 
    Details
    ISSN: 1432-0630
    Keywords: 72.40 ; 72.20 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A transient negative photoconductivity phenomenon observed in silicon doped with gold atoms by an appropriate diffusion condition has been investigated. The transient negative photoconductivity could be observed with a diode doped with gold atoms under intrinsic light-pulse illumination. In the recovery process of the transient negative photoconductivity to a steady-state dark level, two kind of time constants were observed, which may be related with the emission of electrons from gold level. A dependence of the magnitude of the peak value on the ambient temperature was observed; a qualitative explanation is given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615977
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  • 4
    Electronic Resource
    Electronic Resource
    Instability of photoexcited electron-hole plasma in short semiconductor structures (1987)
    Springer
    Applied physics 42 (1987), S. 41-43 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The instability of the electron-hole plasma produced by continuous photoexcitation in short semiconductor structures is investigated theoretically. The applied electric field is considerably disturbed by photogenerated charge carriers. At a sufficiently intensive photogeneration plasma instability occurs. The frequency of current oscillations due to the instability, as shown by numerical simulation for a GaAs structure, is in the range of 1011–1012s−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618157
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  • 5
    Electronic Resource
    Electronic Resource
    On the gate capacitance of MOS structures of kane-type semiconductors under magnetic quantization (1987)
    Springer
    Applied physics 42 (1987), S. 331-336 
    Details
    ISSN: 1432-0630
    Keywords: 73 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An attempt is made to formulate the gate capacitance of MOS structures of Kane-type semiconductors under magnetic quantization, without any approximations of weak or strong electric field limits, on the basis of the fourth-order effective mass theory and taking into account the interactions of the conduction, light-hole, heavy-hole, and split-off bands. It is found, taking n-channel Hg1−x Cd x Te as an example, that the gate capacitance exhibits spiky oscillations with changing magnetic field, which is in qualitative agreement with experimental observations, reported elsewhere, in MOS structures of the same semiconductor. The corresponding results for n-channel inversion layers on parabolic semiconductors are also obtained from the expressions derived.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616572
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  • 6
    Electronic Resource
    Electronic Resource
    Point defects, diffusion processes, and swirl defect formation in silicon (1985)
    Springer
    Applied physics 37 (1985), S. 1-17 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The paper consists of three parts. In the first part we review the basic experimental and theoretical results which shaped our present knowledge on point defects and diffusion processes in silicon. These results concern on one side oxidation effects which established that silicon self-interstitials and vacancies coexist in silicon and on the other side diffusion of gold into dislocation-free silicon which allowed to determine the self-interstitial contribution to silicon self-diffusion and to estimate the corresponding vacancy contribution. In the second part we discuss topics for which an understanding is just emerging within the framework of coexisting self-interstitials and vacancies: reaching of local dynamical equilibrium between self-interstitials and vacancies; rough estimates of the thermal equilibrium concentrations of self-interstitials and vacancies and their respective diffusivities, and finally, various possibilities to generate an undersaturation of self-interstitials. In the third part we examine swirl defect formation in silicon in terms of vacancies and self-interstitials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617863
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  • 7
    Electronic Resource
    Electronic Resource
    The influence of graphite boat material on the purity of LPE InGaAs (1987)
    Springer
    Applied physics 43 (1987), S. 37-40 
    Details
    ISSN: 1432-0630
    Keywords: 81.10 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract This paper describes the purity of LPE InGaAs layers grown in graphite boats, machined from various graphite materials. The influence of the material is clearly visible if the growth solution is sufficiently pure. Carrier concentrations n〈2×l015 cm−3 and mobilitiesμ(77 K)〉 38000 cm2/Vs are routinely achieved for suitable graphite materials already from the third run of a new “large” boat applying a prebake of only 15 h. “Small” boats yield even better results (n=0.5×1015 cm−3 andμ(77 K)=49500 m2/Vs). The sticking of In-rich solutions to the graphite does not depend on the material but is solely dependent on the surface roughness. The problem of graphite particle abrasion is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615203
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  • 8
    Electronic Resource
    Electronic Resource
    248 nm laser etching of GaAs in chlorine and ozone gas environments (1988)
    Springer
    Applied physics 45 (1988), S. 301-304 
    Details
    ISSN: 1432-0630
    Keywords: 42.60 ; 82.50N ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract KrF laser etching of GaAs in Cl2 and O3 gas ambients by direct laser illumination is reported. The etch depth per pulse in Cl2 was found to be linear versus the laser fluence on the sample in the 0.2–1.1 J/cm2 range. It increased as a function of the Cl2 pressure up to 6 Torr and slightly decreased for pressures above this value. It also decreased as a function of the laser repetition rate. Very smoothly etched surfaces were obtained after irradiation using the Cl2 and O3 etching gases. Auger analysis of the etched GaAs surfaces shows almost no traces of chlorine after etching in Cl2, whereas a thick oxide layer of about 1500 Å thickness was found after etching in ozone.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617935
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  • 9
    Electronic Resource
    Electronic Resource
    Do oxygen molecules contribute to oxygen diffusion and thermal donor formation in silicon? (1989)
    Springer
    Applied physics 48 (1989), S. 219-228 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In- and out-diffusion experiments of oxygen in silicon indicate the existence of an oxygen-containing species diffusing much faster than interstitial oxygen at temperatures below about 700°C. The formation of oxygen-related thermal donors in the temperature range around 450°C also requires a fast diffusing species. The paper examines the possibility of this fast diffusing species beingmolecular oxygen, as had been suggested earlier. Special emphasis will be placed on experimental results which have become available since that time. These results allow one to relate thermal donor formation to the loss of interstitial oxygen and to oxygen precipitation. The role of carbon is also considered in this context.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00619388
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  • 10
    Electronic Resource
    Electronic Resource
    High frequency characterisation of double drift region InP and GaAs diodes (1989)
    Springer
    Applied physics 48 (1989), S. 437-443 
    Details
    ISSN: 1432-0630
    Keywords: 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Computer studies have been made on the high frequency characteristics of symmetrically doped flat profile double drift region (DDR) InP and GaAs impatts in the mm-wave (60–100 GHz) frequency band. The spatial distribution of high frequency negative resistance and reactance in the depletion layer of DDR devices and their admittance properties have been investigated. The results indicate that DDR InP impatts should have higher drift zone voltage drop, higher negative resistance and higher negative conductance compared to their GaAs counterparts designed for the same range of mm-wave frequencies. Furthermore, the negative resistance peak is larger in magnitude for InP impatts compared to that for GaAs impatts. It is thus observed that DDR InP impatts should be superior to their GaAs counterparts as regards mm-wave power generation with high conversion efficiency.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00619715
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  • 11
    Electronic Resource
    Electronic Resource
    Reduction of the threshold temperature sensitivity of 1.55 μm InGaAsP lasers by subnanosecond optical excitation (1986)
    Springer
    Applied physics 39 (1986), S. 273-276 
    Details
    ISSN: 1432-0630
    Keywords: 78.20 ; 85.30 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In GaAsP lasers operating at 1.5 to 1.6 μm were pumped optically with a pulsed 1.06 μm source. The temperature dependence of the pump energy at laser threshold has been measured for temperatures from 170 to 330 K. Pump pulse widths of 300 ns and 150–300 ps were employed, long and short compared to the carrier life-time in the laser material. Over the high-temperature range of 260 to 330 K short pulse excitation gives a considerable reduction of the threshold temperature sensitivity with a characteristic temperatureT 0 ′ =85 K compared to T 0 h =45 K for long-pulse excitation. This is in qualitative agreement with previous results on electrically excited lasers although the temperature sensitivity of the optically excited lasers is larger. At temperatures between 170 to 260 K no reduction of the temperature sensitivity was observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617272
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  • 12
    Electronic Resource
    Electronic Resource
    Electrical properties and degradation behavior of hydrogenated amorphous Si alloys for solar cells (1986)
    Springer
    Applied physics 41 (1986), S. 275-283 
    Details
    ISSN: 1432-0630
    Keywords: 85.30 ; 86.30 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electrical properties and the degradation behavior of hydrogenated amorphous silicon alloys (a-Si1−x A x : H, with A=C, Ge, B, P) in designs of pin, pip, nin, and MOS structures are investigated by measuring the dark and light I(V) characteristics and the spectral response as well as the space-charge-limited current (SCLC), the time of flight (TOF) of carriers and the field effect (FE). These investigations give an overview of our recent work combined with new results emphasizing the physics of the a-Si:H pin solar cells. We discuss the stabilizing influence on the degradation behavior achieved by profiling the i layers of the pin solar cells with P and B. Two kinds of pin solar cells, namely glass/SnO2/p(C)in/metal and glass/metal/pin/ITO, are investigated and an explanation of their different spectral response behavior is given. SCLC measurements lead to the conclusion that trapping is also involved in the degradation mechanism, as is recombination. TOF experiments on a-Si1−x Ge x : H pin diodes indicate that the incorporation of Ge widens the tail-state distribution below the conduction band. FE measurements showed densities of gap states of about 5×l016cm−3eV−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616049
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  • 13
    Electronic Resource
    Electronic Resource
    Non-exponential dark capacitance transients from red-emitting GaP LED's — Field and edge effects on the 0.75 eV centre (1987)
    Springer
    Applied physics 42 (1987), S. 301-302 
    Details
    ISSN: 1432-0630
    Keywords: 71.55 ; 85.60 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616567
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  • 14
    Electronic Resource
    Electronic Resource
    Carrier frequency-dependent intrinsic parameters in an ion-implanted silicon photo-MESFET (1987)
    Springer
    Applied physics 44 (1987), S. 361-364 
    Details
    ISSN: 1432-0630
    Keywords: 72.40 ; 78.55 ; 85.30 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Carrier frequency-dependent intrinsic parameters of an ion-implanted silicon photo-MESFET have been analysed theoretically. The internal gate source capacitanceC gs is found to increase with increasing carrier frequency under the normally OFF condition and the change is small under the normally ON condition. Also, the internal drain-source resistanceR ds increases with frequency at a fixed flux density and wavelength of operation. The ion-implanted photo-MESFET could become useful as optically controlled switching device in digital circuits.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00624604
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  • 15
    Electronic Resource
    Electronic Resource
    Temperature dependence of photodegradation in amorphous hydrogenated silicon (1988)
    Springer
    Applied physics 46 (1988), S. 5-8 
    Details
    ISSN: 1432-0630
    Keywords: 73.60 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Measurements of steady-state photoconductivity with respect to light-induced defect generation in amorphous hydrogenated silicon (a-Si: H) show that the power index of the time evolution (long-term observation) of the photodegradation is determined by the exposure temperature and the material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615129
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  • 16
    Electronic Resource
    Electronic Resource
    Electron traps and positive DLTS signals in VPE GaAs MESFETs (1989)
    Springer
    Applied physics 48 (1989), S. 457-463 
    Details
    ISSN: 1432-0630
    Keywords: 71.55 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Capacitance DLTS measurements have been performed in VPE GaAs MESFETs prepared on Bridgman Cr-doped and LEC undoped semi-insulating substrates. A band of electron traps not intrinsically related to the VPE growth process and accumulating near the metal (gate) — semiconductor interface was detected in all the samples. Deeper regions into the channel were free from any detectable trap. Near pinch-off conditions, a positive capacitance signal was found to dominate the DLTS spectra only in the case of samples prepared on Cr-doped substrates. The hypothesis of this positive transient being related to changes in the occupation of surface states in the ungated surface access regions has been checked by comparing experimental and calculated dependencies of the signal amplitude on reverse gate voltage. Unexplained discrepancies, together with the absence of positive signal in MESFETs prepared on LEC undoped substrates, suggest the possibility of hole emission from hole traps within the bulk of the device.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00619718
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  • 17
    Electronic Resource
    Electronic Resource
    Models for implantation into multilayer targets (1986)
    Springer
    Applied physics 41 (1986), S. 201-207 
    Details
    ISSN: 1432-0630
    Keywords: 34 ; 61.80 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Models for the description of implantation profiles in multilayer targets are compared. It is found that all analytical models have severe limitations if the different layers possess very different stopping powers. The best description of multilayer targets is obtained by a combination model using density scaling of the range and integration to account for mass conservation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616841
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  • 18
    Electronic Resource
    Electronic Resource
    Excess capacitance of ZnO-Au varactors (1987)
    Springer
    Applied physics 42 (1987), S. 249-255 
    Details
    ISSN: 1432-0630
    Keywords: 73.40 ; 85.30 ; 71.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Doped ZnO single crystals were deposited with gold and indium in 1×10−8 Torr vacuum. The lithium-doped ZnO single crystals and the gold interface revealed not only a Schottky diode but also varactor characteristics. TheI-V andC-V characteristics of ZnO:Li-Au devices were determined in the 0–140 mV and 0–1.5 V ranges. The frequency dependence of ZnO:Li-Au varactors was investigated in the 6–550 kHz range and the value of the most efficient varactor frequency was found to be 50 kHz for the lithium-doped samples prepared. To bring further insight into the matter the concept of excess capacitance was introduced and 1/C 2=f(−V) curves were rearranged between 0–150 mV where Schottky characteristics are non-linear. The excess capacitance values of lithium-doped varactors were determined at four different frequencies and ranged from 26 pF at 50 kHz to 70 pF at 6kHz. Finally, the bulk donor concentrations of the single crystals were calculated from the modifiedC-V curves to beN D= 3×1020 m−3. On the other hand, the bulk donor concentration determined from the non-modifiedC-V curves wasN D′=1.02×1022 m−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620609
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  • 19
    Electronic Resource
    Electronic Resource
    MITATT mode in DDR heterostructure Impatt (1987)
    Springer
    Applied physics 42 (1987), S. 303-309 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 79.20 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Large signal characterisation of double heterostructure DDR Impatt diode has been carried out in the millimeter-wave range considering the MITATT mode of operation. The structure of the device is p+-p2-p1-n1-n2-n+ where impact ionisation and tunneling takes place in the p1-n1 region. In this study we have considered two well-known heterostructures, e.g., InP/GaInAs/InP and InP/InGaAsP/InP and one nonconventional structure GaAs/InP/GaAs. The theoretical results of the performances of these devices as regards of output power, efficiency, and negative conductance revealed that the structures are quite promising as the source of power in the millimeter-wave range. The analysis may be used for other mm wave DDR heterostructure Impatts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616568
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  • 20
    Electronic Resource
    Electronic Resource
    Amorphous silicon logic integrated circuits (1988)
    Springer
    Applied physics 45 (1988), S. 53-61 
    Details
    ISSN: 1432-0630
    Keywords: 61.40 ; 85.30 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Amorphous silicon thin-film integrated circuits, with between 4 and 18 transistor functions per chip, have been fabricated on glass substrates. The amorphous silicon and the dielectric layers are deposited by rf glow discharge. The circuits have been designed to realize basic logic functions such as inverters, NAND and NOR gates, and addressable memory cells. For the first time, an amorphous silicon flip flop requiring a supply voltage of only 4.5 V has been manufactured. The logic voltage levels of the flip flop are compatible with standard bipolar TTL circuits. Measurements on an inverter chain show a typical propagation delay time of 70 μs and a power-delay-time product of 65 pJ. All of the circuits use n-channel enhancement type load transistors instead of integrated ohmic load resistors. The channel length of the driver transistors is 15 μm with a gate source/drain overlap of 7.5 μm. Experimental geometry ratios range from β=2.25 to β=21. Generally, the driver transistors exhibit on/off ratios greater than 106 for supply voltages smaller than 5 V. At these voltages the measured on-currents per unit channel width are in the order of 5...10nA/μm. The influence of the geometry ratio on static inverter characteristic and switching speed is discussed by means of a simple model. Two different manufacturing schemes for the fabrication of the integrated circuits are outlined. Mask layouts and experimental transfer characteristics of several integrated circuits are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618763
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  • 21
    Electronic Resource
    Electronic Resource
    Effects of annealing temperature on the alloying behavior of the AuGe-GaAs〈100〉 interface (1989)
    Springer
    Applied physics 49 (1989), S. 285-292 
    Details
    ISSN: 1432-0630
    Keywords: 73.40 ; 82.80 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract UV(He I) and X-ray photoelectron spectroscopies (UPS and XPS) were used to examine the alloying behavior of AuGe ohmic contacts to silicon-doped 〈100〉 oriented n-type GaAs substrates. The reacted interface was then revealed by Ar ion sputter depth profiling at room temperature and after annealing in ultra high vacuum at 300°, 500°, or 700°C. The indiffusion of Au and the outdiffusion of Ga and As are evident. Instead of obtaining a maximum peak of the Ge profile on annealing in forming gas, we observed an increase of Ge indiffusion with temperature. The Au indiffusion results in a decrease in the Au 5d splitting and a shift of both levels to higher binding energy. Au-Ga alloy formation is indicated by the Au 4f levels, and is further supported by the observation of the metallic Ga peak. It has been concluded that the sample annealed at 500°C forms the Au-Ga alloy and the compound of As containing Ge more easily than the samples annealed at 300° or 700°C. This result is consistent with the observations of low contact resistance at the annealing temperature of ∼ 500°C for AuNiGe ohmic contacts to n-type GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616856
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