ALBERT

Description: It is shown that the problem of retrieving storm electric fields from an aircraft instrumented with several electric field mill sensors can be expressed in terms of a standard Lagrange multiplier optimization problem. The method naturally removes aircraft charge from the retrieval process without having to use a high voltage stinger and linearly combined mill data values. It allows a variety of user-supplied physical constraints (the so-called side constraints in the theory of Lagrange multipliers) and also helps improve absolute calibration. Additionally, this paper introduces an alternate way of performing the absolute calibration of an aircraft that has some benefits over conventional analyses. It is accomplished by using the time derivatives of mill and pitch data for a pitch down maneuver performed at high (greater than 1 km) altitude. In Part II of this study, the above methods are tested and then applied to complete a full calibration of a Citation aircraft.

Description: Reconfigurable Field Programmable Gate Arrays (FPGAs) from Altera and Actel and an FPGA-based quick-turnApplication Specific Integrated Circuit (ASIC) from Altera were subjected to single-event testing using heavy ions. Both Altera devices (Stratix II and HardCopy II) exhibited a low latchup threshold (below an LET of 3 MeV-cm2/mg) and thus are not recommended for applications in the space radiation environment. The flash-based Actel ProASIC Plus device did not exhibit latchup to an effective LET of 75 MeV-cm2/mg at room temperature. In addition, these tests did not show flash cell charge loss (upset) or retention damage. Upset characterization of the design-level flip-flops yielded an LET threshold below 10 MeV-cm2/mg and a high LET cross section of about lxlO-6 cm2/bit for storing ones and about lxl0-7 cm2/bit for storing zeros . Thus, the ProASIC device may be suitable for critical flight applications with appropriate triple modular redundancy mitigation techniques.

Description: We report on SEE and TID tests of highly scaled Samsung 2Gbits flash memories. Both in-situ and biased interval irradiations were used to characterize the response of the total accumulated dose failures. The radiation-induced failures can be categorized as followings: single event upset (SEU) read errors in biased and unbiased modes, write errors, and single-event-functional-interrupt (SEFI) failures.

Description: Single-event transients are investigated for two voltage regulator circuits that are widely used in space. A circuit-level model is developed that can be used to determine how transients are affected by different circuit application conditions. Internal protection circuits-which are affected by load as well as internal thermal effects-can also be triggered from heavy ions, causing dropouts or shutdown ranging from milliseconds to seconds. Although conventional output transients can be reduced by adding load capacitance, that approach is ineffective for dropouts from protection circuitry.

Description: Heavy ion irradiation of flash memories shows loss of stored data. The fluence dependence is indicative of microdose effects. Other qualitative factors identifying the effect as microdose are discussed. The data is presented, and compared to statistical results of a microdose target-based model.

Description: The electrical characteristics of proton-irradiated bipolar transistors are affected by ionization damage to the insulating oxide and displacement damage to the semiconductor bulk. While both types of damage degrade the transistor, it is important to understand the mechanisms individually and to be able to analyze them separately. In this paper, a method for analyzing the effects of ionization and displacement damage using gate-controlled lateral PNP bipolar junction transistors is described. This technique allows the effects of oxide charge, surface recombination velocity, and bulk traps to be measured independently.

Description: The purpose of this paper is to provide an overview of the Actel field programmable gate array (FPGA) issues and investigations to date, provide information to GSFC parts engineers on the risks associated with the use of these parts in flight, provide procurement options for their respective projects, and provide general guidance for use of these devices if no other acceptable options exist.

Description: This viewgraph presentation reviews the use of Low Voltage Dropout (LVDO) Voltage Regulators in environments where heavy ion induced Single Event Transients are a concern to the designers.Included in the presentation are results of tests of voltage regulators.

Description: All present ferroelectric transistors have been made on the micrometer scale. Existing models of these devices do not take into account effects of nanoscale ferroelectric transistors. Understanding the characteristics of these nanoscale devices is important in developing a strategy for building and using future devices. This paper takes an existing microscale ferroelectric field effect transistor (FFET) model and adds effects that become important at a nanoscale level, including electron velocity saturation and direct tunneling. The new model analyzed FFETs ranging in length from 40,000 nanometers to 4 nanometers and ferroelectric thickness form 200 nanometers to 1 nanometer. The results show that FFETs can operate on the nanoscale but have some undesirable characteristics at very small dimensions.

Description: Degradation of wire bonds (WBs) is one of the major factors limiting reliability of plastic encapsulated microcircuits (PEMs) at high temperatures. Use of PEMs in military and aerospace applications requires extended and thorough evaluation of encapsulating materials and reliability of packages in harsh environments. However, the effect of environmental conditions on characteristics of molding compounds (MCs) and reliability of wire bonds has not been studied sufficiently to date. In this work, two types of PEMs in QFP-style packages have been stored in different environments at temperatures from 130 C to 225 C for up to 4,500 hours in some cases. To assess the effect of oxygen, the parts were aged at 198 C in air and vacuum chambers. The effect of humidity was evaluated during long-term highly accelerated temperature and humidity stress testing (HAST) at temperatures of 130 C and 150 C. Thermo-mechanical and thermo-gravimetrical analyses were used to evaluate the effect of environment on characteristics of molding compound used. Measurements of contact resistances of wire bonds and their mechanical strength were employed to monitor degradation of wire bonds throughout the testing. Correlation between degradation of MC and WB failures has been analyzed. The effect of environmental conditions on accelerating factors of WB failures has been assessed, and the mechanism of wire bond degradation due to the presence of moisture and oxygen is discussed.

Description: Surge current testing is considered one of the most important techniques to evaluate reliability and/or screen out potentially defective tantalum capacitors for low-impedance applications. Analysis of this test, as it is described in the MIL-PRF-55365 document, shows that it does not address several issues that are important to assure adequate and reproducible testing. This work investigates the effect of inductance of the test circuit on voltage and current transients and analyzes requirements for the elements of the circuit, in particular, resistance of the circuit, inductance of wires and resistors, type of switching devices, and characteristics of energy storage bank capacitors. Simple equations to estimate maximum inductance of the circuit to prevent voltage overshooting and minimum duration of charging/discharging cycles to avoid decreasing of the effective voltage and overheating of the parts during surge current testing are suggested.

Description: A viewgraph presentation on the development of a low cost, high speed tester reconfigurable Field Programmable Gata Array (FPGA) is shown. The topics include: 1) Introduction; 2) Objectives; 3) Tester Descriptions; 4) Tester Validations and Demonstrations; 5) Future Work; and 6) Summary.

Description: This paper reports on a new generation of aircraft-based rotating-vane style electric field mills designed and built at NASA's Marshall Spaceflight Center. The mills have individual microprocessors that digitize the electric field signal at the mill and respond to commands from the data system computer. The mills are very sensitive (1 V/m per bit), have a wide dynamic range (115 dB), and are very low noise (+/-1 LSB). Mounted on an aircraft, these mills can measure fields from +/-1 V/m to +/-500 kV/m. Once-per-second commanding from the data collection computer to each mill allows for precise timing and synchronization. The mills can also be commanded to execute a self-calibration in flight, which is done periodically to monitor the status and health of each mill.

Description: An electric propulsion thrust stand capable of supporting testing of thrusters having a total mass of up to 125 kg and producing thrust levels between 100 microN to 1 N has been developed and tested. The design features a conventional hanging pendulum arm attached to a balance mechanism that converts horizontal deflections produced by the operating thruster into amplified vertical motion of a secondary arm. The level of amplification is changed through adjustment of the location of one of the pivot points linking the system. Response of the system depends on the relative magnitudes of the restoring moments applied by the displaced thruster mass and the twisting torsional pivots connecting the members of the balance mechanism. Displacement is measured using a non-contact, optical linear gap displacement transducer and balance oscillatory motion is attenuated using a passive, eddy-current damper. The thrust stand employs an automated leveling and thermal control system. Pools of liquid gallium are used to deliver power to the thruster without using solid wire connections, which can exert undesirable time-varying forces on the balance. These systems serve to eliminate sources of zero-drift that can occur as the stand thermally or mechanically shifts during the course of an experiment. An in-situ calibration rig allows for steady-state calibration before, during and after thruster operation. Thrust measurements were carried out on a cylindrical Hall thruster that produces mN-level thrust. The measurements were very repeatable, producing results that compare favorably with previously published performance data, but with considerably smaller uncertainty.

Description: The Lagrange multiplier theory developed in Part I of this study is applied to complete a relative calibration of a Citation aircraft that is instrumented with six field mill sensors. When side constraints related to average fields are used, the Lagrange multiplier method performs well in computer simulations. For mill measurement errors of 1 V m(sup -1) and a 5 V m(sup -1) error in the mean fair-weather field function, the 3D storm electric field is retrieved to within an error of about 12%. A side constraint that involves estimating the detailed structure of the fair-weather field was also tested using computer simulations. For mill measurement errors of 1 V m(sup -l), the method retrieves the 3D storm field to within an error of about 8% if the fair-weather field estimate is typically within 1 V m(sup -1) of the true fair-weather field. Using this type of side constraint and data from fair-weather field maneuvers taken on 29 June 2001, the Citation aircraft was calibrated. Absolute calibration was completed using the pitch down method developed in Part I, and conventional analyses. The resulting calibration matrices were then used to retrieve storm electric fields during a Citation flight on 2 June 2001. The storm field results are encouraging and agree favorably in many respects with results derived from earlier (iterative) techniques of calibration.

Description: A viewgraph presentation describing an ideal Silicon Carbide detector for ultraviolet, vacuum ultraviolet, extreme ultraviolet and soft x-ray detection is shown. The topics include: 1) An ideal photo-detector; 2) Dark current density of SiC photodiodes at room temperature; 3) Dark current in SiC detectors; 4) Resistive and capacitive feedback trans-impedance amplifier; 5) Avalanche gain; 6) Excess noise; 7) SNR in single photon counting mode; 8) Structure of SiC single photon counting APD and testing structure; 9) Single photon counting waveform and testing circuit; 10) Amplitude of SiC single photon counter; 11) Dark count of SiC APD photon counters; 12) Temperature-dependence of dark count rate; 13) Reduce the dark count rate by reducing the breakdown electric field; 14) Spectrum range for SiC detectors; 15) QE curves of Pt/4H-SiC photodiodes; 16) QE curve of SiC; 17) QE curves of SiC photodiode vs. penetration depth; 18) Visible rejection of SiC photodiodes; 19) Advantages of SiC photodiodes; 20) Competitors of SiC detectors; 21) Extraterrestrial solar spectra; 22) Visible-blind EUV detection; 23) Terrestrial solar spectra; and 24) Less than 1KeV soft x-ray detection.

Description: High quality infrared (IR) quantum detectors are important for several applications, such as atmospheric remote sensing, chemical detection and absorption spectroscopy. Although several IR detectors are commercially available, with different materials and structures, they provide limited performance regarding the signal-to-noise ratio and the corresponding minimum detectable signal. InGaAsSb/AlGaAsSb heterojunction based phototransistors show strong potential for developing IR sensors with improved performance. In this paper, the performance of a novel npn InGaAsSb/AlGaAsSb heterojunction phototransistor is presented. This performance study is based on experimental characterization of the device dark current, noise and spectral response. Detectivity of 1.7x10(exp 9) cmHz(exp 1/2)/W at 2 microns was obtained at 100 C temperature and 2 V bias voltage. This corresponds to a responsivity of 94.7 A/W and an internal gain of 156 with about 37.7% quantum efficiency. Reducing the temperature to -30 C allows to increase the bias to 3V and enhance the detectivity to 8.7x10(exp 10) cmHz(exp 1/2)/W at the same wavelength, which corresponds to a responsivity of 386.5 A/W and an internal gain of 288.2 with about 83.3% quantum efficiency. The device impulse response and linearity, including the corresponding dynamic range, also are presented. Impulse response analysis indicated a settling time of about 1.1 s at 2V and 100 C, while linearity measurements indicated a constant responsivity in the radiation intensity range of 1.6x10(exp -7) W/sq cm and 31.6 mW/sq cm.

Description: Delta doping process was developed on p-channel CCDs for MIDEX-Orion and JDEM/SNAP and was applied to large format (2k x4k) CCDs. Delta doping is applied to fully-fabricated CCDs (complete with Al metallization). High QE and low dark current is demonstrated with delta doped p-channel CCDs. In-house AR coating is demonstrated. Advantages include: Delta doping enables high QE and stability across the entire spectral range attainable with silicon. Delta doping is a low temperature process and is compatible with fully-fabricated detector arrays. Same base device for Orion two channels. High radiation tolerance and no thinning requirements of high purity p-channel. CCDs are additional advantages.

Description: There is evidence that satellite-borne RF sounders can act as mobile ionospheric heaters in addition to performing topside sounding. The main objective of topside sounding is to use sounder-generated electromagnetic (em) waves to obtain ionospheric topside vertical electron-density (N(sub e) profiles. These profiles are obtained from mathematical inversions of the frequency vs. delay-time ionospheric reflection traces. In addition to these em reflection traces, a number of narrowband intense signals are observed starting at zero delay times after the transmitted pulses. Some of these signals, termed plasma resonances, appear at characteristic frequencies of the ambient medium such as at the electron cyclotron frequency f(sub ce), the harmonics nf(sub ce), the electron plasma frequency f(sub pe) and the upper-hybrid frequency f(sub uh), where (f(sub uh))(exp 2) = (f(sub ce))(exp 2) + (f(sub pe))(exp 2) . These signals have been attributed to the oblique echoes of sounder-generated electrostatic (es) waves. These resonances provide accurate in situ f(sub pe) and f(sub ce) values which, in turn, lead to accurate N(sub e) and [B] values where B is the ambient magnetic field. Resonances are also observed between the nf(sub ce) harmonics both above and below f(sub uh). The former, known as the Qn plasma resonances, are mainly attributed to the matching of the wave group velocity of sounder-generated (Bernstein-mode) es waves to the satellite velocity. The frequency spectrum of these waves in the magnetosphere can be used to detect non-Maxwellian electron velocity-distributions. In addition, these resonances also exhibit components that appear to be the result of plasma emissions stimulated by the sounder pulses. The plasma resonances observed between the nf(sub ce) harmonics and below f(sub uh), known as the Dn plasma resonances, are entirely attributed to such sounder-stimulated plasma emissions. There are other sounder-stimulated plasma phenomena that also fall into this category, e.g., ion affects on electron-resonant phenomena, proton-cyclotron echoes and N(sub e) field-aligned irregularities (FAI). Some of these phenomena are more pronounced when f(sub pe)/f(sub ce) approx. = n where n is an integer significantly greater than one. The observations suggest that the sounder-stimulated plasma phenomena are stimulated, or enhanced, on a time scale much less than one second. The purpose of this presentation is to review the above topics with particular emphasis on the sounder-stimulated plasma phenomena.

Description: The results of this study will be usd by KSC to provide a basis for upgrades that will enhance user operability and safety in future versions of the Propellant Handlers Ensemble or implemented as "drop-in" improvements to the existing Propellant Handlers Ensemble inventory.

Description: No abstract available

Description: In a modified configuration of a coaxial probe feed for a layered printed-circuit antenna (e.g., a microstrip antenna), the outer conductor of the coaxial cable extends through the thickness of at least one dielectric layer and is connected to both the ground-plane conductor and a radiator-plane conductor. This modified configuration simplifies the incorporation of such radio-frequency integrated circuits as power dividers, filters, and low-noise amplifiers. It also simplifies the design and fabrication of stacked antennas with aperture feeds.

Description: Two modern cryogenic variants of the Pound circuit have been devised to increase the frequency stability of microwave oscillators that include cryogenic sapphire-filled cavity resonators. The original Pound circuit is a microwave frequency discriminator that provides feedback to stabilize a voltage-controlled microwave oscillator with respect to an associated cavity resonator. In the present cryogenic Pound circuits, the active microwave devices are implemented by use of state-of-the-art commercially available tunnel diodes that exhibit low flicker noise (required for high frequency stability) and function well at low temperatures and at frequencies up to several tens of gigahertz. While tunnel diodes are inherently operable as amplitude detectors and amplitude modulators, they cannot, by themselves, induce significant phase modulation. Therefore, each of the present cryogenic Pound circuits includes passive circuitry that transforms the AM into the required PM. Each circuit also contains an AM detector that is used to sample the microwave signal at the input terminal of the high-Q resonator for the purpose of verifying the desired AM null at this point. Finally, each circuit contains a Pound signal detector that puts out a signal, at the modulation frequency, having an amplitude proportional to the frequency error in the input signal. High frequency stability is obtained by processing this output signal into feedback to a voltage-controlled oscillator to continuously correct the frequency error in the input signal.

Description: A commercially available cryogenic direct- acting solenoid valve has been modified to incorporate a rapid-chill feature. The net effect of the modifications is to divert some of the cryogenic liquid to the task of cooling the remainder of the cryogenic liquid that flows to the outlet. Among the modifications are the addition of several holes and a gallery into a valve-seat retainer and the addition of a narrow vent passage from the gallery to the atmosphere.

Description: A recently proposed boundary condition for atomistic computational modeling of semiconductor nanostructures (particularly, quantum dots) is an improved alternative to two prior such boundary conditions. As explained, this boundary condition helps to reduce the amount of computation while maintaining accuracy.

Description: Olivine (Mg, Fe)Si2O4 does not, by stoichiometry, accept cations such as Sc(3+) or Cr(3+). However, the partition coefficients of Sc and Cr between olivine and liquid are significant 0.2-1.0. We have measured Cr(3+) partition coefficients of near unity and have grown olivines with nearly 3 wt.% Sc2O3. Therefore, there must be a simple means of charge balancing 3+ ions in a crystal structure that was obviously not designed to receive other than 2+ ions on the olivine M sites. The simplest explanation is that two 3+ ions enter the olivine structure by displacing three 2+ ions and creating an M site vacancy. Even this explanation has difficulties. For minor elements in our experiments (~1 wt.%) the odds of a minor element 3+ ion finding a second 3+ for charge balance are of the order of 100:1 against. Because of the reducing conditions of our experiments, Fe(3+) will not suffice; and Al(3+) is not in sufficient quantity in olivine for charge balance. Therefore, Cr or Sc must, in effect, charge balance itself. For true trace elements, the problem is compounded many times. For an ion at the 10 ppm level the chances of finding a second (for example) Sc ion is approx.10(exp 5):1 against. Of course, any other 3+ ion would suffice but comparisons between percent level doping experiments and trace level partitioning indicate that Henry s law is obeyed. This implies that the same substitution mechanism occurs at both the percent and tens of ppm levels. There are two simple solutions to this problem: (i) The electrical conductivity of olivine is such that charge balance need not be local. This requires substantial domains within the olivine crystal in electrical contact by migration of vacancies or electronic defects. (ii) The 3+ cation brings along its own charge-balancing ion because it existed as a dimer in the silicate liquid. Olivine is not a true insulator but is actually a p-type semiconductor. Even so, electrical communication by this means is unlikely over the tens or hundreds of unit cells that would be required for charge balance to be local. Therefore, we cautiously favor the idea that melt speciation is the means by which 3+ ions enter the olivine structure. Possibly this model might be tested by in situ XAFS measurements or by molecular dynamical calculations.

Description: We have developed relatively broadband K- and Ka-band phase shifters using synthetic (slow-wave) transmission lines employing coupled microstripline "varactors". The tunable coupled microstripline circuits are based on laser ablated BaSrTiO films on lanthanum aluminate substrates. A model and design criteria for these novel circuits will be presented, along with measured performance including anomalous phase delay characteristics. The critical role of phase shifter loss and transient response in reflectarray antennas will be emphasized.

Description: This paper will discuss and compare the execution times of three examples of the Discrete Fourier Transform (DFT). The first two examples will demonstrate the direct implementation of the algorithm. In the first example, the Fourier coefficients are generated at the execution of the DFT. In the second example, the coefficients are generated prior to execution and the DFT coefficients are indexed at execution. The last example will demonstrate the Cooley- Tukey algorithm, better known as the Fast Fourier Transform. All examples were written in C executed on a PC using a Pentium 4 running at 1.7 Ghz. As a function of N, the total complex data size, the direct implementation DFT executes, as expected at order of N2 and the FFT executes at order of N log2 N. At N=16K, there is an increase in processing time beyond what is expected. This is not caused by implementation but is a consequence of the effect that machine architecture and memory hierarchy has on implementation. This paper will include a brief overview of digital signal processing, along with a discussion of contemporary work with discrete Fourier processing.

Description: This paper is dedicated to further presentations and discussions of the results from our new global self-consistent theoretical model of interacting ring current ions and electromagnetic ion cyclotron waves [Khazanov et al., 2006; here referred to as Paper 1]. In order to adequately take into account the wave propagation and refraction in a multi-ion plasmasphere, we explicitly include the ray tracing equations in our previous self-consistent model and use the general form of the wave kinetic equation [for details see Paper 1]. To demonstrate the effects of the EMIC wave propagation and refraction on the RC proton precipitations and heating of the thermal plasmaspheric electrons we simulate the May 1998 storm. The main findings of our simulation can be summarized as follows. Firstly, the wave induced precipitations have a quite fine structure, and are highly organized by location of the plasmapause gradient. The strongest fluxes of about 4 (raised dot) 10(exp 6) [(cm (raised dot) s (raised dot) sr)(sup -l)] are observed during the main and early recovery phases of the storm. The very interesting and probably more important finding is that in a number of cases the most intense precipitating fluxes are not simply connected to the most intense EMIC waves. The character of the EMIC wave power spectral density distribution over the equatorial wave normal angle is an extremely crucial for the effectiveness of the RC ion scattering. Secondly, comparison of the global proton precipitating patterns with the results from other ring current model [Kozyra et al., 1997] reveals that although we observe a qualitative agreement between localizations of the wave induced fluxes in the models, there is no quantitative agreement between the magnitudes of these fluxes. These differences are mainly due to a qualitative difference between the characters of the EMIC wave power spectral density distributions over the equatorial wave normal angle. Finally, the two energy sources to the plasmaspheric electrons are considered; (i) the heat fluxes caused by the EMIC wave energy absorption due to Landau resonance, and (ii) the heat fluxes due to Coulomb energy degradation of the RC o(+) ions. The heat fluxes caused by the EMIC wave energy absorption due to Landau resonance are observed in the postnoon-premidnight MLT sector, and maximize at the magnitude of 10l1 (eV/(cm(sup 2)(raised dot) s) at L=3.25, MLT=22 at 3400 UT after 1 May, 0000 UT. The greatest Coulomb energy deposition rates are about 2 (raised dot) 10(sup 10)(eV/(cm(sup 2)(raised dot) s) and observed during two periods; 32-48 hours, and 76-86 hours after 1 May, 0000 UT. The theoretically derived spatial structure of the thermal electron heating caused by interaction of the RC with plasmasphere is strongly supported by concurrent and conjugate plasma measurements from the plasmasphere, the RC, and the topside ionosphere [Gurgiolo et al., 20051.

Description: An improved tool has been devised for applying torque to lock and unlock knurled collars on circular electrical connectors. The tool was originally designed for, and used by, astronauts working in outer space on the Hubble Space Telescope (HST). The tool is readily adaptable to terrestrial use in installing and removing the same or similar circular electrical connectors as well as a wide variety of other cylindrical objects, the tightening and loosening of which entail considerable amounts of torque.

Description: A computer program implements a thermal model of an insulated wire carrying electric current and surrounded by a vacuum. The model includes the effects of Joule heating, conduction of heat along the wire, and radiation of heat from the outer surface of the insulation on the wire. The model takes account of the temperature dependences of the thermal and electrical properties of the wire, the emissivity of the insulation, and the possibility that not only can temperature vary along the wire but, in addition, the ends of the wire can be thermally grounded at different temperatures. The resulting second-order differential equation for the steady-state temperature as a function of position along the wire is highly nonlinear. The wire is discretized along its length, and the equation is solved numerically by use of an iterative algorithm that utilizes a multidimensional version of the Newton-Raphson method.

Description: A switching circuit that drives a piezoelectric pump at a high voltage with a polarity that alternates at the desired mechanical pump frequency is described and depicted. This circuit offers advantages of (1) high energy efficiency relative to conventional direct-drive circuits and (2) compactness relative to conventional resonant drive circuits.

Description: A three-stage monolithic microwave integrated circuit (MMIC) W-band amplifier has been constructed and tested in a continuing effort to develop amplifiers as well as oscillators, frequency multipliers, and mixers capable of operating over wide frequency bands that extend above 100 GHz. There are numerous potential uses for MMICs like these in scientific instruments, radar systems, communication systems, and test equipment operating in this frequency range.

Description: An improved method has been devised for fabricating micron-dimension Li features. This approach is intended for application in the fabrication of lithium-based microelectrochemical devices -- particularly solid-state thin-film lithium microbatteries.

Description: A proposed improved method of externally controlled time multiplexing of the readouts of focal-plane arrays of pairs of stacked quantum-well infrared photodetectors (QWIPs) that operate in different wavelength bands is based on a dual-detector-common-plane circuit configuration. The method would be implemented in a QWIP integrated-circuit chip hybridized with a readout integrated-circuit (ROIC) chip.

Description: We report the first AlGaAsSb/InGaAsSb phototransistors with a cutoff wavelength (50% of peak responsivity) of 2.4 micrometers operating in a broad range of temperatures. These devices are also the first AlGaAsSb/InGaAsSb heterojunction phototransistors (HPT) grown by molecular beam epitaxy (MBE). This work is a continuation of a preceding study, which was carried out using LPE (liquid phase epitaxy)-grown AlGaAsSb/InGaAsSb/GaSb heterostructures. Although the LPE-related work resulted in the fabrication of an HPT with excellent parameters [1-4], the room temperature cutoff wavelength of these devices (approximately 2.15 micrometers) was determined by fundamental limitations implied by the close-to-equilibrium growth from Al-In-Ga-As-Sb melts. As the MBE technique is free from the above limitations, AlGaAsSb/InGaAsSb/GaSb heterostructures for HPT with a narrower bandgap of the InGaAsSb base and collector - and hence sensitivity at longer wavelengths (lambda) - were grown in this work. Moreover, MBE - compared to LPE - provides better control over doping levels, composition and width of the AlGaAsSb and InGaAsSb layers, compositional and doping profiles, especially with regard to abrupt heterojunctions. The new MBE-grown HPT exhibited both high responsivity R (up to 2334 A/W for lambda=2.05 micrometers at -20 deg C.) and specific detectivity D* (up to 2.1 x 10(exp 11) cmHz(exp 1/2)/W for lambda=2.05 micrometers at -20 deg C).

Description: Shortwave infrared detectors are critical for several applications including remote sensing and optical communications. Several detectors are commercially available for this wavelength range, but they lack sufficient gain, which limits their detectivity. The characterization results of an AlGaAsSb/InGaAsSb phototransistor for shortwave IR application are reported. The phototransistor is grown using molecular beam epitaxy technique. Spectral response measurements showed a uniform responsivity between 1.2 and 2.4 micron region with a mean value of 1000 A/W. A maximum detectivity of 3.4 X 10(exp 11) cmHz1/2/W was obtained at 2 micron at -20 C and 1.3 V.

Description: A thermoelectric device formed of nanowires on the nm scale. The nanowires are preferably of a size that causes quantum confinement effects within the wires. The wires are connected together into a bundle to increase the power density.

Description: An electrical connector assembly includes a wire bundle having at least one wire with a metal shield surrounding at least a portion of the wire. The shield has an end portion and provides electromagnetic interference protection to the wire. A backshell includes a body and a cover secured to the body together defining an internal cavity with the wire at least partially arranged within the cavity. The backshell provides EMI protection for the portion of the wire bundle not covered by the shield. The backshell includes a hole in a wall of either the body or the cover with the end portion of the shield extending through the hole. The clamp is secured about the body and the cover with the end portion of the shield arranged between the clamp and the backshell grounding the shield to the backshell. The clamp forces the backshell into engagement with the wire bundle to provide strain relief for the wire bundle.

Description: The present invention relates generally to reconfigurable, solid-state matrix arrays comprising multiple rows and columns of reconfigurable secondary mechanisms that are independently tuned. Specifically, the invention relates to reconfigurable devices comprising multiple, solid-state mechanisms characterized by at least one voltage-varied parameter disposed within a flexible, multi-laminate film, which are suitable for use as magnetic conductors, ground surfaces, antennas, varactors, ferrotunable substrates, or other active or passive electronic mechanisms.

Description: A process for fabricating a polymer based circuit by the following steps. A mold of a design is formed through a lithography process. The design is transferred to a polymer substrate through a hot embossing process. A metal layer is then deposited over at least part of said design and at least one electrical lead is connected to said metal layer.

Description: A laminated piezoelectric transformer is provided using the longitudinal vibration modes for step-up voltage conversion applications. The input portions are polarized to deform in a longitudinal plane and are bonded to an output portion. The deformation of the input portions is mechanically coupled to the output portion, which deforms in the same longitudinal direction relative to the input portion. The output portion is polarized in the thickness direction relative its electrodes, and piezoelectrically generates a stepped-up output voltage.

Description: In this work, we report the implementation of a self-adaptive system using a field programmable gate array (FPGA) and data converters. The self-adaptive system can autonomously recover the lost functionality of a reconfigurable analog array (RAA) integrated circuit (IC) [3]. Both the RAA IC and the self-adaptive system are operating in extreme temperatures (from 120 C down to -180 C). The RAA IC consists of reconfigurable analog blocks interconnected by several switches and programmable by bias voltages. It implements filters/amplifiers with bandwidth up to 20 MHz. The self-adaptive system controls the RAA IC and is realized on Commercial-Off-The-Shelf (COTS) parts. It implements a basic compensation algorithm that corrects a RAA IC in less than a few milliseconds. Experimental results for the cold temperature environment (down to -180 C) demonstrate the feasibility of this approach.

Description: A Series Connected Buck-Boost Regulator (SCBBR) that switches only a fraction of the input power, resulting in relatively high efficiencies. The SCBBR has multiple operating modes including a buck, a boost, and a current limiting mode, so that an output voltage of the SCBBR ranges from below the source voltage to above the source voltage.

Description: An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Description: A method of evolving a circuit uses a heterogenous mix of models of both high and low levels of resolution.

Description: A limit and position sensing system includes a sensor assembly and an emitter. The sensor assembly includes first and second electrical conductors arranged in opposing parallel planes. The first electrical conductor is coiled outwardly from either end thereof in a clockwise fashion to form a first coil region and a second coil region. The second electrical conductor forms a single coil with portions of the single coil's rings lying between the first end and second end of the first electrical conductor being parallel to an axis of the first electrical conductor's plane. Ferromagnetic material is aligned with the first and second electrical conductors and spans beyond (a) the first and second ends of the first electrical conductor, and (b) the portions of the rings of the second electrical conductor's single coil that lie between the first end and second end of the first electrical conductor. The emitter is spaced apart from the sensor assembly and transmits a periodic electromagnetic wave towards the sensor assembly.

Description: Devices and techniques for coupling radiation to intraband quantum-well semiconductor sensors that are insensitive to the wavelength of the coupled radiation. At least one reflective surface is implemented in the quantum-well region to direct incident radiation towards the quantum-well layers.

Description: A light sensor substrate comprises a base made from a semi-conductive material and topped with a layer of an electrically non-conductive material. A first electrode and a plurality of carbon nanotube (CNT)-based conductors are positioned on the layer of electrically non-conductive material with the CNT-based conductors being distributed in a spaced apart fashion about a periphery of the first electrode. Each CNT-based conductor is coupled on one end thereof to the first electrode and extends away from the first electrode to terminate at a second free end. A second or gate electrode is positioned on the non-conductive material layer and is spaced apart from the second free end of each CNT-based conductor. Coupled to the first and second electrode is a device for detecting electron transfer along the CNT-based conductors resulting from light impinging on the CNT-based conductors.

Description: Magnetic field response sensors designed as passive inductor-capacitor circuits produce magnetic field responses whose harmonic frequencies correspond to states of physical properties for which the sensors measure. Power to the sensing element is acquired using Faraday induction. A radio frequency antenna produces the time varying magnetic field used for powering the sensor, as well as receiving the magnetic field response of the sensor. An interrogation architecture for discerning changes in sensor s response kequency, resistance and amplitude is integral to the method thus enabling a variety of measurements. Multiple sensors can be interrogated using this method, thus eliminating the need to have a data acquisition channel dedicated to each sensor. The method does not require the sensors to be in proximity to any form of acquisition hardware. A vast array of sensors can be used as interchangeable parts in an overall sensing system.

Description: A system and method use a wireless tether comprising a transmitter and a receiver to alert a caregiver that an object has been left unattended. A detector senses the presence of the object, usually a child, located in a position such as a safety seat. The detector is operatively coupled to the transmitter. which is located near the object. The transmitter transmits at least one wireless signal when the object is in the position. The receiver, which is remotely located from the transmitter, senses at least one signal as long as the receiver is within a prescribed range of transmission. By performing a timing function, the receiver monitors the proximity of the caregiver, who maintains possession of the receiver, to the transmitter. The system communicates an alarm to the caregiver when the caregiver ventures outside the range of transmission without having removed the object from the position.

Description: A magnetic field response sensor comprises an inductor placed at a fixed separation distance from a conductive surface to address the low RF transmissivity of conductive surfaces. The minimum distance for separation is determined by the sensor response. The inductor should be separated from the conductive surface so that the response amplitude exceeds noise level by a recommended 10 dB. An embodiment for closed cavity measurements comprises a capacitor internal to said cavity and an inductor mounted external to the cavity and at a fixed distance from the cavity s wall. An additional embodiment includes a closed cavity configuration wherein multiple sensors and corresponding antenna are positioned inside the cavity, with the antenna and inductors maintained at a fixed distance from the cavity s wall.

Description: A Series Connected Buck-Boost Regulator (SCBBR) that switches only a fraction of the input power, resulting in relatively high efficiencies. The SCBBR has multiple operating modes including a buck, a boost, and a current limiting mode, so that an output voltage of the SCBBR ranges from below the source voltage to above the source voltage.

Description: Method and system for fabricating an electrical interconnect capable of supporting very high current densities ( 10(exp 6)-10(exp 10) Amps/sq cm), using an array of one or more carbon nanotubes (CNTs). The CNT array is grown in a selected spaced apart pattern, preferably with multi-wall CNTs, and a selected insulating material, such as SiOw, or SiuNv is deposited using CVD to encapsulate each CNT in the array. An exposed surface of the insulating material is planarized to provide one or more exposed electrical contacts for one or more CNTs.

Description: A flexible framework supports electrically-conductive elements in a capacitive sensing arrangement. Identical frames are arranged end-to-end with adjacent frames being capable of rotational movement there between. Each frame has first and second passages extending therethrough and parallel to one another. Each of the first and second passages is adapted to receive an electrically-conductive element therethrough. Each frame further has a hollowed-out portion for the passage of a fluent material therethrough. The hollowed-out portion is sized and shaped to provide for capacitive sensing along a defined region between the electrically-conductive element in the first passage and the electrically-conductive element in the second passage.

Description: An electro-active transducer includes a ferroelectric material sandwiched by first and second electrode patterns. When the device is used as an actuator, the first and second electrode patterns are configured to introduce an electric field into the ferroelectric material when voltage is applied to the electrode patterns. When the device is used as a sensor. the first and second electrode patterns are configured to introduce an electric field into the ferroelectric material when the ferroelectric material experiences deflection in a direction substantially perpendicular thereto. In each case, the electrode patterns are designed to cause the electric field to: i) originate at a region of the ferroelectric material between the first and second electrode patterns. and ii) extend radially outward from the region of the ferroelectric material (at which the electric field originates) and substantially parallel to the ferroelectric material s plane.

Description: A video guidance sensor system for use, p.g., in automated docking of a chase vehicle with a target vehicle. The system includes an integrated rangefinder sub-system that uses time of flight measurements to measure range. The rangefinder sub-system includes a pair of matched photodetectors for respectively detecting an output laser beam and return laser beam, a buffer memory for storing the photodetector outputs, and a digitizer connected to the buffer memory and including dual amplifiers and analog-to-digital converters. A digital signal processor processes the digitized output to produce a range measurement.

Description: An electroactive device comprises at least two layers of material, wherein at least one layer is an electroactive material and wherein at least one layer is of non-uniform thickness. The device can be produced in various sizes, ranging from large structural actuators to microscale or nanoscale devices. The applied voltage to the device in combination with the non-uniform thickness of at least one of the layers (electroactive and/or non-electroactive) controls the contour of the actuated device. The effective electric field is a mathematical function of the local layer thickness. Therefore, the local strain and the local bending/ torsion curvature are also a mathematical function of the local thickness. Hence the thinnest portion of the actuator offers the largest bending and/or torsion response. Tailoring of the layer thicknesses can enable complex motions to be achieved.

Description: A method is provided for marking electrical Wiring with condition indicators. One or more markers are added to one or both of the insulative material and a surface of an electrical conductor such that it bonds thereto. Each marker is capable of emanating into a surrounding atmospheric environment as a gaseous effluent in response to a specific condition experienced by the electrical conductor.

Description: A miniature, ultra-high resolution, and color scanning microscope using microchannel and solid-state technology that does not require focus adjustment. One embodiment includes a source of collimated radiant energy for illuminating a sample, a plurality of narrow angle filters comprising a microchannel structure to permit the passage of only unscattered radiant energy through the microchannels with some portion of the radiant energy entering the microchannels from the sample, a solid-state sensor array attached to the microchannel structure, the microchannels being aligned with an element of the solid-state sensor array, that portion of the radiant energy entering the microchannels parallel to the microchannel walls travels to the sensor element generating an electrical signal from which an image is reconstructed by an external device, and a moving element for movement of the microchannel structure relative to the sample. Discloses a method for scanning samples whereby the sensor array elements trace parallel paths that are arbitrarily close to the parallel paths traced by other elements of the array.

Description: A viewgraph presentation detailing costs and technical perspectives on radiation testing is shown. The topics include: 1) Introduction - a Changing Microelectronics World; 2) Sample Technology Changes and Related Impacts on Radiation Testing; 3) Perspective on the "New" Cost or Doing Business; and 4) Considerations.

Description: The topics covered include: 1) Replaceable Sensor System for Bioreactor Monitoring; 2) Unitary Shaft-Angle and Shaft-Speed Sensor Assemblies; 3) Arrays of Nano Tunnel Junctions as Infrared Image Sensors; 4) Catalytic-Metal/PdO(sub x)/SiC Schottky-Diode Gas Sensors; 5) Compact, Precise Inertial Rotation Sensors for Spacecraft; 6) Universal Controller for Spacecraft Mechanisms; 7) The Flostation - an Immersive Cyberspace System; 8) Algorithm for Aligning an Array of Receiving Radio Antennas; 9) Single-Chip T/R Module for 1.2 GHz; 10) Quantum Entanglement Molecular Absorption Spectrum Simulator; 11) FuzzObserver; 12) Internet Distribution of Spacecraft Telemetry Data; 13) Semi-Automated Identification of Rocks in Images; 14) Pattern-Recognition Algorithm for Locking Laser Frequency; 15) Designing Cure Cycles for Matrix/Fiber Composite Parts; 16) Controlling Herds of Cooperative Robots; 17) Modification of a Limbed Robot to Favor Climbing; 18) Vacuum-Assisted, Constant-Force Exercise Device; 19) Production of Tuber-Inducing Factor; 20) Quantum-Dot Laser for Wavelengths of 1.8 to 2.3 micron; 21) Tunable Filter Made From Three Coupled WGM Resonators; and 22) Dynamic Pupil Masking for Phasing Telescope Mirror Segments.

Description: A miniature assembly is disclosed which includes a housing assembly with a cover configured to be sealably secured to a box-like receptacle. The receptacle comprises openings on opposing sides for the seating therein of communications connectors. Enclosed within housing is custom-sized circuit board for supporting, at least, a standard communications interface and at least one electronic device.

Description: A non-catalytic process for the production of carbon nanotubes includes supplying an electric current to a carbon anode and a carbon cathode which have been securely positioned in the open atmosphere with a gap between them. The electric current creates an electric arc between the carbon anode and the carbon cathode, which causes carbon to be vaporized from the carbon anode and a carbonaceous residue to be deposited on the carbon cathode. Inert gas is pumped into the gap to flush out oxygen, thereby preventing interference with the vaporization of carbon from the anode and preventing oxidation of the carbonaceous residue being deposited on the cathode. The anode and cathode are cooled while electric current is being supplied thereto. When the supply of electric current is terminated, the carbonaceous residue is removed from the cathode and is purified to yield carbon nanotubes.

Description: Previous research investigated the modeling of a N Wga te constructed of Metal-Ferroelectric- Semiconductor Field-Effect Transistors (MFSFETs) to obtain voltage transfer curves. The NAND gate was modeled using n-channel MFSFETs with positive polarization for the standard CMOS n-channel transistors and n-channel MFSFETs with negative polarization for the standard CMOS p-channel transistors. This paper investigates the MFSFET NAND gate switching time propagation delay, which is one of the other important parameters required to characterize the performance of a logic gate. Initially, the switching time of an inverter circuit was analyzed. The low-to-high and high-to-low propagation time delays were calculated. During the low-to-high transition, the negatively polarized transistor pulls up the output voltage, and during the high-to-low transition, the positively polarized transistor pulls down the output voltage. The MFSFETs were simulated by using a previously developed model which utilized a partitioned ferroelectric layer. Then the switching time of a 2-input NAND gate was analyzed similarly to the inverter gate. Extension of this technique to more complicated logic gates using MFSFETs will be studied.

Description: Piezoelectric lead magnesium niobate-lead titanate (PMN-PT) single crystal is one of the most promising materials for electromechanical device applications due to its high electrical field induced strain and high electromechanical coupling factor. PMN-PT single crystal-based multilayer stack actuators and multilayer stack-based flextensional actuators have exhibited high stroke and high displacement-voltage ratios. The actuation capabilities of these two actuators were evaluated using a newly developed method based upon a laser vibrometer system under various loading conditions. The measured displacements as a function of mechanical loads at different driving voltages indicate that the displacement response of the actuators is approximately constant under broad ranges of mechanical load. The load capabilities of these PMN-PT single crystal-based actuators and the advantages of the capability for applications will be discussed.

Description: Neutralizers in a multi-thruster array configuration were characterized using conventional diagnostics such as peak-to-peak keeper oscillation amplitude as well as unconventional methods which featured the application of electrostatic probes. The response of the array local plasma environment to neutralizer flow rate changes were documented using Langmuir probes and retarding potential analyzers. Such characterization is necessary for system efficiency and stability optimization. Because the local plasma environment was measured in conjunction with the neutralizer characterization, particle fluxes at the array and thus array lifetime impacts associated with neutralizer operating mode could also be investigated. Neutralizer operating condition was documented for a number of multithruster array configurations ranging from three-engines, three-neutralizers to a single engine, one-neutralizer all as a function of neutralizer flow rate.

Description: A viewgraph presentation on SEU tolerant SiGe HBT technology is shown. The topics include: 1) Introduction; 2) TID and SEU in SiGe Technology; 3) RHBD Techniques; 4) Experiment; 5) Heavy-Ion Data and Analysis; and 6) Summary.

Description: Minimization of uncertainty is essential to extend the usable range of the 15-psid Electronically Scanned Pressure [ESP) transducer measurements to the low free-stream static pressures found in hypersonic wind tunnels. Statistical characterization of environmental error sources inducing much of this uncertainty requires a well defined and controlled calibration method. Employing such a controlled calibration system, several studies were conducted that provide quantitative information detailing the required controls needed to minimize environmental and human induced error sources. Results of temperature, environmental pressure, over-pressurization, and set point randomization studies for the 15-psid transducers are presented along with a comparison of two regression methods using data acquired with both 0.36-psid and 15-psid transducers. Together these results provide insight into procedural and environmental controls required for long term high-accuracy pressure measurements near 0.01 psia in the hypersonic testing environment using 15-psid ESP transducers.

Description: This paper describes a new reconfigurable analog array (MA) architecture and integrated circuit (IC) used to map analog circuits that can adapt to extreme temperatures under programmable control. Algorithm-driven adaptation takes place on the RAA IC. The algorithms are implemented in a separate Field Programmable Gate Array (FPGA) IC, co-located with the RAA in the extreme temperature environment. The experiments demonstrate circuit adaptation over a wide temperature range, from extremely low temperature of -180 C to high 120 C.

Description: In this paper, we present two single stage MMIC amplifiers with the first demonstrating a measured S21 gain of 3-dB at 280-GHz and the second demonstrating 2.5-dB gain at 300- GHz, which is the threshold of the sub-millimeter wave regime. The high-frequency operation is enabled by a high-speed InP HEMT with a 35-nm gate. This is the first demonstrated S21 gain at sub-millimeter wave frequencies in a MMIC.

Description: Emerging technology is enabling the design community to consistently expand the amount of functionality that can be implemented within Integrated Circuits (ICs). As the number of gates placed within an FPGA increases, the complexity of the design can grow exponentially. Consequently, the ability to create reliable circuits has become an incredibly difficult task. In order to ease the complexity of design completion, the commercial design community has developed a very rigid (but effective) design methodology based on synchronous circuit techniques. In order to create faster, smaller and lower power circuits, transistor geometries and core voltages have decreased. In environments that contain ionizing energy, such a combination will increase the probability of Single Event Upsets (SEUs) and will consequently affect the state space of a circuit. In order to combat the effects of radiation, the aerospace community has developed several "Hardened by Design" (fault tolerant) design schemes. This paper will address design mitigation schemes targeted for SRAM Based FPGA CMOS devices. Because some mitigation schemes may be over zealous (too much power, area, complexity, etc.. . .), the designer should be conscious that system requirements can ease the amount of mitigation necessary for acceptable operation. Therefore, various degrees of Fault Tolerance will be demonstrated along with an analysis of its effectiveness.

Description: Lithium-ion batteries in a pouch form offer high energy density and safety in their designs and more recently they are offering performance at higher rates. Lithium Technologies 9Ah high-power pouch cells were studied at different rates, thermal environments, under vacuum and several different conditions of abuse including overcharge, over-discharge and external short circuit. Results of this study will be presented.

Description: We have investigated commercially available photodiodes and also recent developed Sb-based phototransistors in order to compare their performances for applications to laser remote sensing. A custom-designed phototransistor in the 0.9- to 2.2-microns wavelength range has been developed at AstroPower and characterized at NASA Langley's Detector Characterization Laboratory. The phototransistor's performance greatly exceeds the previously reported results at this wavelength range in the literature. The detector testing included spectral response, dark current and noise measurements. Spectral response measurements were carried out to determine the responsivity at 2-microns wavelength at different bias voltages with fixed temperature; and different temperatures with fixed bias voltage. Current versus voltage characteristics were also recorded at different temperatures. Results show high responsivity of 2650 A/W corresponding to an internal gain of three orders of magnitude, and high detectivity (D*) of 3.9x10(exp 11) cm.Hz(exp 1/2)/W that is equivalent to a noise-equivalent-power of 4.6x10(exp -14) W/Hz(exp 1/2) (-4.0 V @ -20 C) with a light collecting area diameter of 200-microns. It appears that this recently developed 2-micron phototransistor's performances such as responsivity, detectivity, and gain are improved significantly as compared to the previously published APD and SAM APD using similar materials. These detectors are considered as phototransistors based-on their structures and performance characteristics and may have great potential for high sensitivity differential absorption lidar (DIAL) measurements of carbon dioxide and water vapor at 2.05-microns and 1.9-microns, respectively.

Description: We present the design for a phase-modulated Opto-Electronic Oscillator (OEO) that incorporates asymmetric Mach- Zehnder (AMZ) interferometers as phase demodulators together with PM modulation suppression. The new design promises to obtain in the electro-optical domain the low-noise advantages previously achieved in RF and microwave oscillators by the use of carrier suppression but which have been achieved only to a limited extent in OEO's.

Description: Single-event upset effects from heavy ions were measured for Motorola silicon-on-insulator (SOI) microprocessor with 90 nm feature sizes at three frequencies of 500, 1066 and 1600 MHz. Frequency dependence of single-event upsets is discussed. The results of our studies suggest the single-event upset in registers and D-Cache tend to increase with frequency. This might have important implications for the overall single-event upset trend as technology moves toward higher frequencies.

Description: The LISA phasemeter is required to measure the phase of an electrical signal with an error less than 3 (micro)cycles/pHz over times scales from 1 to 1000 seconds. This phase sensitivity must be achieved in the presence of laser phase fluctuations 108 times larger than the target sensitivity. Other challenging aspects of the measurement are that the heterodyne frequency varies from 2 to 20 MHz and the signal contains multiple frequency tones that must be measured. The phasemeter architecture uses high-speed analog to digital conversion followed by a digital phase locked loop. An overview of the phasemeter architecture is presented along with results for the breadboard LISA Phasemeter demonstrating that critical requirements are met.

Description: The analysis and design of practical control systems requires that stochastic models be employed. Analysis and design tools have been developed, for example, for Markovian jump linear continuous and discrete-time systems, piecewise-deterministic processes (PDP's), and general stochastic hybrid systems (GSHS's). These model classes have been used in many applications, including fault tolerant control and networked control systems. This paper presents initial results on the analysis of a sampled-data PDP representation of a nonlinear sampled-data system with a jump linear controller. In particular, it is shown that the state of the sampled-data PDP satisfies the strong Markov property. In addition, a relation between the invariant measures of a sampled-data system driven by a stochastic process and its associated discrete-time representation are presented. As an application, when the plant is linear with no external input, a sufficient testable condition for the convergence in distribution to the invariant delta Dirac measure is given.

Description: Embedded resistors and capacitors were purchased from two technology; organic PWB and inorganic low temperature co-fire ceramic (LTCC). Small groups of each substrate were exposed to four environmental tests and several characterization tests to evaluate their performance and reliability. Even though all passive components maintained electrical performance throughout environmental testing, differences between the two technologies were observed. Environmental testing was taken beyond manufacturers' reported testing, but general not taken to failure. When possible, data was quantitatively compared to manufacturer's data.

Description: We propose a tuning method for Micro-Electro-Mechanical Systems (MEMS) gyroscopes based on evolutionary computation that has the capacity to efficiently increase the sensitivity of MEMS gyroscopes through tuning and, furthermore, to find the optimally tuned configuration for this state of increased sensitivity. We present the results of an experiment to determine the speed and efficiency of an evolutionary algorithm applied to electrostatic tuning of MEMS micro gyros. The MEMS gyro used in this experiment is a pyrex post resonator gyro (PRG) in a closed-loop control system. A measure of the quality of tuning is given by the difference in resonant frequencies, or frequency split, for the two orthogonal rocking axes. The current implementation of the closed-loop platform is able to measure and attain a relative stability in the sub-millihertz range, leading to a reduction of the frequency split to less than 100 mHz.

Description: This viewgraph presentation reviews possible ways to eliminate electrical stress during Electromagneticic Compatibility (EMC) testing. The presentation reviews tests that have had problems due to electrical stress. On December 5, 1995 Cassini Radar instrument failed a functional test in preparation for EMC conducted susceptibility (CSO 1 ) testing. The instrument power supply did not turn on as required, and failure occurred prior to injection of CS test stimulus. A investigation of the failure was conducted. A PSPICE simulation of Cassini Radar 30V line using the EMC test setup was performed; the result of the simulation was an oscillation on the 30V input of the power supply. In another case: on December 28, 1999 an oscillation occurred on the input power line of the SlRTF Infrared Array Camera (IRAC) while preparing to perform CSOI testing, Resulted in damage to flight hardware. Subsequent to failure, JPL provided GSFC history and corrective action from Cassini Radar CSOI test failure GSFC implemented the same corrective action as JPL, except that the value of the resistor connected across the isolation transformer primary winding is 2.5 ohms instead of 50 ohms. Three recommendations are made: (1) Make EMC test community aware of the problem and potential solutions by presenting papers at major environmental test conferences (2) Include warnings and safeguards in EMC test requirements and procedures (3) Try to convince EMC test equipment suppliers to design a CSOl test fixture similar to fixture shown in the diagram

Description: This viewgraph presentation provides an overview of Field Programmable Gate Arrays (FPGAs), what they are, implementations in space missions, and current available technologies. Single Event Upsets (SEUs) and Single Event Transients (SETs) are discussed in relation to their effects on FPGAs. Testing goals, considerations, and data analysis are reviewed.

Description: We report for the first time the successful integration of Strontium-Bismuth-Tantalate ferroelectric capacitors on an SOI Substrate. We have verified that the unique processing requirements of SBT capacitors does not affect the properties of the surrounding FD-SOI transistors, and, conversely, we have verified that the SOI processing does not affect the quality of the SBT capacitors.

Description: The design of a complete vector measurement system being tested over 560-635 GHz is presented. The topics include: 1) Current State-of-the-Art in Vector Measurements; 2) Submillimeter Active Imaging Requirements; 3) 600 GHz Vector Measurement System; 4) 450 MHz IF Signal; 5) 450 MHz IF signal @ 1 kHz Res. BW; 6) 450 MHz IF Signal Mixed with Shifted 450 MHz Reference Signal; 7) Reference Signal Offset Generator; 8) Cavity Bandpass Filter; 9) Miniature Multistage Helical Filter; 10) X36 450 MHz Multiplier; 11) 600 GHz Test Setup; 12) 600 GHz Transmit Module; 13) 600 GHz Receive Module; 14) Performance Tests: Amplitude Stability & Dynamic Range; 15) Performance Tests: Phase Stability; 16) Stability at Imaging Bandwidths; 17) Phase Measurement Verification; and 18) The Next Step: Imaging.

Description: This viewgraph presentation reviews the low temperature, Total Ionizing Dose (TID) tests of radiation hardened serial to parallel converter to be used on the James Webb Space Telescope. The test results show that the original HV583 level shifter - a COTS part -was not suitable for JWST because the supply currents exceeded specs after 20 krad( Si) .The HV584 - functionally similar to the HV583 -was designed using RHBD approach that reduced the leakage currents to within acceptable levels and had only a small effect on the level-shifted output voltage.

Description: As with other bipolar analog devices, voltage regulators are known to be sensitive to single event transients (SET). In typical applications, large output capacitors are used to provide noise immunity. Therefore, since SET amplitude and duration are generally small, they are often of secondary importance due to this capacitance filtering. In low voltage applications, however, even small SET are a concern. Over-voltages may cause destructive conditions. Under-voltages may cause functional interrupts and may also trigger electrical latchup conditions. In addition, internal protection circuits which are affected by load as well as internal thermal effects can also be triggered from heavy ions, causing dropouts or shutdown ranging from milliseconds to seconds. In the case of FPGA power supplies applications, SETS are critical. For example, in the case of Actel FPGA RTAX family, core power supply voltage is 1.5V. Manufacturer specifies an absolute maximum rating of 1.6V and recommended operating conditions between 1.425V and 1.575V. Therefore, according to the manufacturer, any transient of amplitude greater than 75 mV can disrupt normal circuit functions, and overvoltages greater than 100 mV may damage the FPGA. We tested five low dropout voltage regulators for SET sensitivity under a large range of circuit application conditions.

Description: This viewgraph presentation reviews an approach to testing microcircuits at cryogenic temperatures. Standard testing procedures are not adequate to test microcircuits that are to operate at cryogenic temperatures. It is therefore necessary to perform analysis of operation conditions and reliability conditions for planning qualification testing of microcircuits at cryogenic temperatures. The major degradations for microcircuits operating at low temperatures depend on the number of switching cycles rather than on the duration of part operation. Therefore instead of accelerating degradation of the parts by increasing the level of stress, the possibility of which is very limited at cryogenic temperatures, the reliability testing can be based on the number of switching cycles.

Description: This paper presents a combined Monte Carlo and analytic approach to the calculation of the pixel-to-pixel distribution of proton-induced damage in a HgCdTe sensor array and compares the results to measured dark current distributions after damage by 63 MeV protons. The moments of the Coulombic, nuclear elastic and nuclear inelastic damage distribution were extracted from Monte Carlo simulations and combined to form a damage distribution using the analytic techniques first described in [I]. The calculations show that the high energy recoils from the nuclear inelastic reactions (calculated using the Monte Car10 code MCNPX [2]) produce a pronounced skewing of the damage energy distribution. The nuclear elastic component (also calculated using the MCNPX) has a negligible effect on the shape of the damage distribution. The Coulombic contribution was calculated using MRED [3,4], a Geant4 [4,5] application. The comparison with the dark current distribution strongly suggests that mechanisms which are not linearly correlated with nonionizing damage produced according to collision kinematics are responsible for the observed dark current increases. This has important implications for the process of predicting the on-orbit dark current response of the HgCdTe sensor array.

Description: This viewgraph presentation reviews the workings of the Laser Diode Arrays (LDA) working group. The group facilitates focused interaction between the LDA user and provider communities and it will author standards document for the specification and qualification of LDA's for operation in the space environment. It also reviews the NASA test and evaluation facilities that are available to the community.

Description: The RADSAFE simulation framework is described and applied to model Single Event Upsets (SEU) in a 0.25 micron CMOS 4Mbit Static Random Access Memory (SRAM). For this circuit, the RADSAFE approach produces trends similar to those expected from classical models, but more closely represents the physical mechanisms responsible for SEU in the SRAM circuit.

Description: The MXER Tether technology development is a high-payoff/high-risk investment area within the NASA In-Space Propulsion Technology (ISPT) Program. The ISPT program is managed by the NASA Headquarters Science Mission Directorate and implemented by the Marshall Space Flight Center in Huntsville, Alabama. The MXER concept was identified and competitively ranked within NASA's comprehensive Integrated In-Space Transportation Plan (IISTP); an agency-wide technology assessment activity. The objective of the MXER tether project within ISPT is to advance the technological maturation level for the MXER system, and its subsystems, as well as other space and terrestrial tether applications. Recent hardware efforts have focused on the manufacturability of space-survivable high-strength tether material and coatings, high-current electrodynamic tether, lightweight catch mechanism, high-accuracy propagator/predictor code, and efficient electron collection/current generation. Significant technical progress has been achieved with modest ISPT funding to the extent that MXER has evolved to a well-characterized system with greater capability as the design has been matured. Synergistic efforts in high-current electrodynamic tethers and efficient electron collection/current generation have been made possible through SBIR and STTR support. The entire development endeavor was orchestrated as a collaborative team effort across multiple individual contracts and has established a solid technology resource base, which permits a wide variety of future space cable/tether applications to be realized.

Description: While there have been numerous reports of short-term transistor operation at 500 degree C or above, these devices have previously not demonstrated sufficient long-term operational durability at 500 degree C to be considered viable for most envisioned applications. This paper reports the development of Silicone Carbi field effect transistors capable of long-term electrical operation at 500 degree C. A 6H-SiC MESFET was packaged and subjected to continuous electrical operation while residing in a 500 degree C oven in oxidizing air atmosphere for over 2400 hours. The transistor gain, saturation current (IDSS), and on-resistance (RDS) changed by less than 20% from initial values throughout the duration of the biased 500 degree C test. Another high-temperature packaged 6H-SiC MESFET was employed to form a simple one-stage high-temperature low-frequency voltage amplifier. This single-stage common-source amplifier demonstrated stable continuous electrical operation (negligible changes to gain and operating biases) for over 600 hours while residing in a 500 degree C air ambient oven. In both cases, increased leakage from annealing of the Schottky gate-to-channel diode was the dominant transistor degradation mechanism that limited the duration of 500 degree C electrical operation.

Description: This viewgraph presentation discusses: radiation fundamentals, radiation damage, how radiation dosage is determined, fluence testing approaches, ionization damage exposure, displacement damage exposure, Europa energy "bins", rationale for group flux (energy bins), electron/proton group fluences, electron beam exposure testing, proton sources, reactor exposures, gamma exposures, preliminary exposure findings, testing caveats, preliminary conclusions, internal discharge, and electron dose depth curves.

Description: A microsystem architecture for real-time, on-site, robust bioinformatic patterns recognition and analysis has been proposed. This system is compatible with on-chip DNA analysis means such as polymerase chain reaction (PCR)amplification. A corresponding novel artificial neural network (ANN) learning algorithm using new sigmoid-logarithmic transfer function based on error backpropagation (EBP) algorithm is invented. Our results show the trained new ANN can recognize low fluorescence patterns better than the conventional sigmoidal ANN does. A differential logarithmic imaging chip is designed for calculating logarithm of relative intensities of fluorescence signals. The single-rail logarithmic circuit and a prototype ANN chip are designed, fabricated and characterized.

Description: A compact submillimeter wave transmission / reflection measurement system has been demonstrated at 560-635 GHz, with electronic tuning over the entire band. Maximum dynamic range measured at a single frequency is 90 dB (60 dB typical), and phase noise is less than +/- 2(deg). By using a frequency steerable lens at the source output and mixer input, the frequency agility of the system can be used to scan the source and receive beams, resulting in near real-time imaging capability using only a single pixel.

Description: The NASA Earth Science System Pathfinder (ESSP) mission Aquarius, will measure global ocean surface salinity with approx.120 km spatial resolution every 7-days with an average monthly salinity accuracy of 0.2 psu (parts per thousand). This requires an L-band low-noise radiometer with the long-term calibration stability of less than or equal to 0.15 K over 7 days. The instrument utilizes a push-broom configuration which makes it impractical to use a traditional warm load and cold plate in front of the feedhorns. Therefore, to achieve the necessary performance Aquarius utilizes a Dicke radiometer with noise injection to perform a warm - hot calibration. The radiometer sequence between antenna, Dicke load, and noise diode has been optimized to maximize antenna observations and therefore minimize NEDT. This is possible due the ability to thermally control the radiometer electronics and front-end components to 0.1 Crms over 7 days.

Description: The next generation of Martian rover#s to be launched by JPL are to examine polar regions where temperatures are extremely low and the absence of an earth-like atmosphere results in high levels of cosmic radiation at ground level. Cosmic rays lead to a plethora of radiation effects including Single Event Transients (SET) which can severely degrade microelectronic functionality. As such, a radiation-hardened, temperature compensated CMOS Single-On-Insulator (SOI) Operational Amplifier has been designed for JPL by the University of Tennessee and fabricated by Honeywell using the SOI V process. SOI technology has been shownto be far less sensitive to transient effects than both bulk and epilayer Si. Broad beam heavy-ion tests at the University of Texas A&M using Kr and Xebeams of energy 25MeV/amu were performed to ascertain the duration and severity of the SET for the op-amp configured for a low and high gain application. However, some ambiguity regarding the location of transient formation required the use of a focused MeV ion microbeam. A 36MeV O6(+) microbeam. the Sandia National Laboratory (SNL) was used to image and verify regions of particular concern. This is a viewgraph presentation

Description: We present design progress and subsystem test results for a new short-term frequency standard, the Voltage Controlled Sapphire Oscillator (VCSO). Included are sapphire resonator and coupling design, cryocooler environmental sensitivity tests, Q measurement results, and turnover temperature results. A previous report presented history of the design related to resonator frequency and frequency compensation [1]. Performance goals are a frequency stability of 1x10(exp -14) (1 second less than or equal to (tau) less than or equal to 100 seconds) and two years or more continuous operation. Long-term operation and small size are facilitated by use of a small Stirling cryo-cooler (160W wall power) with an expected 5 year life.

Description: The X2000 Power System Electronics (PSE) is a Jet Propulsion Laboratory (JPL) task to develop a new generation of power system building blocks for use on future deep-space missions. The effort includes the development of electronic components and modules that can be used as building blocks in the design of generic spacecraft power systems. All X2000 avionics components and modules are designed for use in centralized or distributed spacecraft architectures. The Power Actuation and Switching Module (PASM) has been developed under the X2000 program. This component enables a modular and scalable design approach for power switching applications, which can result in a wide variety of power switching architectures using this simple building block. The PASM is designed to provide most of the necessary power switching functions of spacecraft for various Deep Space missions including future missions to Mars, comets, Jupiter and its moons. It is fabricated using an ASIC process that is tolerant of high radiation. The development included two application specific integrated circuits (ASICs) and support circuitry all packaged using High Density Interconnect (HDI) technology. It can be operated in series or parallel with other PASMs. It can be used as a high-side or low-side switch and it can drive thruster valves, pyrotechnic devices such as NASA standard initiators, bus shunt resistors, and regular spacecraft component loads. Each PASM contains two independent switches with internal current limiting and over-current trip-off functions to protect the power subsystem from load faults. During turnon and turnoff each switch can limit the rate of current change (di/dt) to a value determined by the user. Three-way majority-voted On/Off commandability and full switch status telemetry (both analog and digital) are built into the module. This paper is a follow up to the one presented at he IECEC 2004 conference that will include the lessons learned and test results from the development.

Description: Effects of displacement damage and ionization damage induced by gamma irradiation on the dark current and impulse response of a high-bandwidth low breakdown voltage Si Avalanche Photodiode has been investigated using picosecond laser microscopy. At doses as high as 10Mrad (Si) minimal alteration in the impulse response and bandwidth were observed. However, dark current measurements also performed with and without biased irradiation exhibit anomalously large damage factors for applied biases close to breakdown. The absence of any degradation in the impulse response is discussed as are possible mechanisms for higher dark current damage factors observed for biased irradiation.