ALBERT

Description: In 1959, during a famous lecture entitled "There's Plenty of Room at the Bottom", Richard Feynman focused on the startling technical possibilities that would exist at the limit of miniaturization, that being atomically precise devices with dimensions in the nanometer range. A nanometer is both a convenient unit of length for medium to large sized molecules, and the root of the name of the new interdisciplinary field of "nanotechnology". Essentially, "nanoelectronics" denotes the goal of shrinking electronic devices, such as diodes and transistors, as well as integrated circuits of such devices that can perform logical operations, down to dimensions in the range of 100 nanometers. The thirty-year hiatus in the development of nanotechnology can figuratively be seen as a period of waiting for the bottom-up and atomically precise construction skills of synthetic chemistry to meet the top-down reductionist aspirations of device physics. The sub-nanometer domain of nineteenth-century classical chemistry has steadily grown, and state-of-the-art supramolecular chemistry can achieve atomic precision in non-repeating molecular assemblies of the size desired for nanotechnology. For nanoelectronics in particular, a basic understanding of the electron transport properties of molecules must also be developed. Quantum chemistry provides powerful computational methods that can accurately predict the properties of small to medium sized molecules on a desktop workstation, and those of large molecules if one has access to a supercomputer. Of the many properties of a molecule that quantum chemistry routinely predicts, the ability to carry a current is one that had not even been considered until recently. "Currently", there is a controversy over just how to define this key property. Reminiscent of the situation in high-Tc superconductivity, much of the difficulty arises from the different models that are used to simplify the complex electronic structure of real materials. A model-independent approach has been proposed, that sacrifices the plentiful molecular orbitals and Bloch functions of conventional approaches, for a single three-dimensional observable quantity, the electron momentum density Pi(sub rho). This quantity is simply the probability of any electron having momentum rho, multiplied by the total number of electrons in the system (the position of the electron is uncertain). We have explored the utility of this new approach in providing a fundamental understanding of the electron transport properties of molecules that have provi been nominated as candidates for components in the design of nanoelectronics; phenylene-ethynylene oligomers. Some of the molecular systems that have been studied are sketched below.

Description: The allowable operating currents of electrical wiring when used in the space vacuum environment is predominantly determined by the maximum operating temperature of the wire insulation. For Kapton insulated wire this value is 200 C. Guidelines provided in the Goddard Space Flight Center (GSFC) Preferred Parts List (PPL) limit the operating current of wire within vacuum to ensure the maximum insulation temperature is not exceeded. For 20 AWG wire, these operating parameters are: 3.7 amps per wire, bundle of 15 or more wires, 70 C environment, and vacuum of 10(exp -5) torr or less. To determine the behavior and temperature of electrical wire at different operating conditions, a thermal vacuum test was performed on a representative electrical harness of the Hubble Space Telescope (HST) power distribution system. This paper describes the test and the results.

Description: The possible processing of semiconductor photovoltaic devices is discussed. The requirements for lunar PV cells is reviewed, and the key challenges involved in their manufacturing are investigated. A schematic diagram of a passivated emitter and rear cell (PERC) is presented. The possible fabrication of large photovoltaic arrays in space from lunar materials is also discussed.

Description: We have investigated thin films and junctions based on copper indium diselenide (CIS) which have been grown by electrochemical deposition. CIS is a leading candidate for use in polycrystalline thin film photovoltaic solar cells. Electrodeposition is a cost-effective method for producing thin-film CIS. We have produced both p and n type CIS thin films from the same aqueous solution by simply varying the deposition potential. A CIS pn junction was deposited using a step-function potential. Stoichiometry of the single layer films was determined by energy dispersive spectroscopy. Carrier densities of these films increased with deviation from stoichiometry, as determined by the capacitance versus voltage dependence of Schottky contacts. Optical bandgaps for the single layer films as determined by transmission spectroscopy were also found to increase with deviation from stoichiometry. Rectifying current versus voltage characteristics were demonstrated for the Schottky barriers and for the pn junction.

Description: Introduction: Inflatable antenna technology is being developed by JPL/NASA to enable the capabilities of low mass, high packaging efficiency, and low-cost deployment for future spacecraft high-gain and large aperture antennas. One of the technologies being considered [11 is the inflatable microstrip reflectarray. A conventional inflatable parabolic reflector antenna will offer similar advantages with the added capability of wide electrical bandwidth. However, it suffers from the difficulty of maintaining its required large, thin, and curved-parabolic surface in the space environment. Since the microstrip reflectarray has the "natural" flat reflecting surface, it is much easier to maintain the required surface tolerance using an inflatable structure. This is the primary reason, despite its narrow bandwidth characteristic, that the inflatable microstrip reflectarray is being studied. This article discusses an already-developed one-meter X-band inflatable microstrip reflectarray and a three-meter Ka-band inflatable microstrip reflectarray which is currently under development. Both antennas' RF structures are designed at JPL and their mechanical inflatable structures are designed and manufactured at ILC Dover, Inc.

Description: This report summarizes the testing and analysis of "single event clock upset' in the RH1020. Also included are SEU-rate predictions and design recommendations for risk analysis and reduction. The subject of "upsets" in the RH1020 is best understood by using a model consisting of a global clock buffer and a D-type flip-flop as the basic memory unit. The RH1020 is built on the ACT 1 family architecture. As such, it has one low-skew global clock buffer with a TTL-level input threshold that is accessed via a single dedicated pin. The clock signal is driven to full CMOS levels, buffered, and sent to individual row buffers with one buffer per channel. For low-skew performance, the outputs of all of the RH1020 row buffers are shorted together via metal lines, as is done in the A1020B. All storage in the RH1020 consists of routed flip-flops, constructed with multiplexors and feedback through the routing segments. A simple latch can be constructed from a single (combinatorial or C) module; an edge-triggered flip-flop is constructed using two concatenated latches. There is no storage in the I/O modules. The front end of the clock buffering circuitry, at a common point relative to the row buffer, is a sub-circuit that was determined to be the most susceptible to heavy ions. This is due, in part, to its smaller transistors compared to the rest of the circuitry. This conclusion is also supported by SPICE simulations and an analysis of the heavy ion data, described in this report. The edge triggered D flip-flop has two single-event-upset modes. Mode one, called C-module upset, is caused by a heavy ion striking the C-module's sensitive area on the silicon and produces a soft single bit error at the output of the flip-flop. Mode two, called clock upset, is caused by a heavy ion strike on the clock buffer, generating a runt pulse interpreted as a false clock signal and consequently producing errors at the flip-flop outputs. C-module upset sensitivity in the RH1020 is essentially the same as that of its ACT 1 siblings (A1020, A1020A and A1020B), which were well tested, analyzed, and documented in the literature.

Description: This paper addresses the accuracy of radiation-induced upset-rate predictions in space using the results of ground-based measurements together with standard environmental and device models. The study is focused on two part types - 16 Mb NEC DRAM's (UPD4216) and 1 Kb SRAM's (AMD93L422) - both of which are currently in space on board the Microelectronics and Photonics Test Bed (MPTB). To date, ground-based measurements of proton-induced single event upset (SEM cross sections as a function of energy have been obtained and combined with models of the proton environment to predict proton-induced error rates in space. The role played by uncertainties in the environmental models will be determined by comparing the modeled radiation environment with the actual environment measured aboard MPTB. Heavy-ion induced upsets have also been obtained from MPTB and will be compared with the "predicted" error rate following ground testing that will be done in the near future. These results should help identify sources of uncertainty in predictions of SEU rates in space.

Description: The decoupled control of the nonlinear, multiinput-multioutput, and highly coupled space station furnace facility (SSFF) thermal control system is addressed. Sliding mode control theory, a subset of variable-structure control theory, is employed to increase the performance, robustness, and reliability of the SSFF's currently designed control system. This paper presents the nonlinear thermal control system description and develops the sliding mode controllers that cause the interconnected subsystems to operate in their local sliding modes, resulting in control system invariance to plant uncertainties and external and interaction disturbances. The desired decoupled flow-rate tracking is achieved by optimization of the local linear sliding mode equations. The controllers are implemented digitally and extensive simulation results are presented to show the flow-rate tracking robustness and invariance to plant uncertainties, nonlinearities, external disturbances, and variations of the system pressure supplied to the controlled subsystems.

Description: This report summarizes the use of SX series devices and their JTAG 1149.1 circuitry. 'JTAG' circuitry was originally designed to standardize testing of boards via a simple control port interface electrically without having to use devices such as a bed of nails tester. JTAG is also used for other functions such as executing built-in-test sequences, identifying devices, or, through custom instructions, other functions designed in by the chip designer. The JTAG circuitry is designed for test only; it has no functional use in the integrated circuit during normal operations. The JTAG circuitry and the mode of the device is controlled by a circuit block known as the 'TAP controller,' which is a sixteen-state state machine along with various registers. The controller is normally in an operational state known as TEST-LOGIC-RESET. In this state, the device is held in a fully functional, operational mode. However, a Single Event Upset (SEU) may remove the TAP controller from this state, causing a loss of control of the integrated circuit, unless certain precautions are taken, such as grounding the optional JTAG TRST signal.

Description: Conventional methods used to measure the cold-test interaction impedance of helical slow-wave structures involve perturbing a helical circuit with a cylindrical dielectric rod placed on the central axis of the circuit. It has been shown that the difference in resonant frequency or axial phase shift between the perturbed and unperturbed circuits can be related to the interaction impedance. However, because of the complex configuration of the helical circuit, deriving this relationship involves several approximations. With the advent of accurate three-dimensional (3-D) helical circuit models, these standard approximations can be fully investigated. This paper addresses the most prominent approximations made in the analysis for measured interaction impedance by Lagerstrom and investigates their accuracy using the 3-D simulation code MAFIA. It is shown that a more accurate value of interaction impedance can be obtained by using 3-D computational methods rather than performing costly and time consuming experimental cold-test measurements.

Description: This report summarizes the use of SX series devices and their JTAG 1149.1 circuitry. 'JTAG' circuitry was originally designed to standardize testing of boards via a simple control port interface electrically without having to use devices such as a bed of nails tester. JTAG is also used for other functions such as executing built-in-test sequences, identifying devices, or, through custom instructions, other functions designed in by the chip designer. The JTAG circuitry is designed for test only; it has no functional use in the integrated circuit during normal operations. The JTAG circuitry and the mode of the device is controlled by a circuit block known as the 'TAP controller,' which is a sixteen-state state machine along with various registers. The controller is normally in an operational state known as TEST-LOGIC-RESET. In this state, the device is held in a fully functional, operating mode. However, a Single Event Upset (SEU) may remove the TAP controller from this state, causing a loss of control of the integrated circuit, unless certain precautions are taken, such as grounding the optional JTAG TRST signal.

Description: Recently, a method has been established to accurately calculate cold-test data for helical slow-wave structures using the three-dimensional (3-D) electromagnetic computer code, MAFIA. Cold-test parameters have been calculated for several helical traveling-wave tube (TWT) slow-wave circuits possessing various support rod configurations, and results are presented here showing excellent agreement with experiment. The helical models include tape thickness, dielectric support shapes and material properties consistent with the actual circuits. The cold-test data from this helical model can be used as input into large-signal helical TWT interaction codes making it possible, for the first time, to design a complete TWT via computer simulation.

Description: Recent advances in the state of the art of computer modeling offer the possibility for the first time to evaluate the effect that slow-wave structure parameter variations, such as manufacturing tolerances, have on the cold-test characteristics of helical traveling-wave tubes (TWT's). This will enable manufacturers to determine the cost effectiveness of controlling the dimensions of the component parts of the TWT, which is almost impossible to do experimentally without building a large number of tubes and controlling several parameters simultaneously. The computer code MAFIA is used in this analysis to determine the effect on dispersion and on-axis interaction impedance of several helical slow-wave circuit parameter variations, including thickness and relative dielectric constant of the support rods, tape width, and height of the metallized films deposited on the dielectric rods. Previous computer analyzes required so many approximations that accurate determinations of the effect of many relevant dimensions on tube performance were practically impossible.

Description: We report on the performance of a novel W-band amplifier fabricated utilizing very compact bump bonds. We bump-bonded a high-speed, low-noise InP high electron mobility transistor (HEMT) onto a separately fabricated passive circuit having a GaAs substrate. The compact bumps and small chip size were used for efficient coupling and maximum circuit design flexibility. This new quasi-monolithic millimeter-wave integrated circuit (Q-MMIC) amplifier exhibits a peak gain of 5.8 dB at approx. 90 GHz and a 3 dB bandwidth of greater than 25%. To our knowledge, this is the highest frequency amplifier assembled using bump-bonded technology. Our bump-bonding technique is a useful alternative to the high cost of monolithic millimeter-wave integrated circuits (MMIC's). Effects of the bumps on the circuit appear to be minimal. We used the simple matching circuit for demonstrating the technology - future circuits would have all of the elements (resistors, via holes, bias lines, etc.) included 'in conventional MMIC's. Our design in different from other investigators' efforts in that the bumps are only 8 microns thick by 15 microns wide. The bump sizes were sufficiently small that the devices, originally designed for W-band hybrid circuits, could be bonded without alteration. Figure 3 shows the measured and simulated magnitude of S-parameters from 85-120 GHz, of the InP HEMT bump-bonded to the low noise amplifier (LNA) passive. The maximum gain is 5.8 dB at approx. 90 GHz, and gain extends to 117 GHz. Measurement of a single device (without matching networks) shows approx. 1 dB of gain at 90 GHz. The measured gain of the amplifier agrees well with the design in the center of the measurement band, and the agreement falls off at the band edges. Since no accommodation for the bump-bonding parasitics was made in the design, the result implies that the parasitic elements associated with the bonding itself do not dominate the performance of the LNA circuit. It should be noted that this amplifier was designed for good noise performance, which is why the input and output return losses are poorer than one would expect for an amplifier simply matched for gain. However, noise performance has not been measured at this time. While the agreement between modeled vs. experimental data is not exact, the data prove that bump-bonded technology can be used for amplifiers at frequencies at least as high as 100 GHz. JPL is pursuing this technology as a way to economically and quickly incorporate the best available HEMTs into a circuit with all of the reliability and circuit design flexibility offered by MMIC technology. We are currently using the technology to fabricate 4-stage, wide-band, W-band LNA's. We have also performed pull and shear tests which show that the bump bonds are sufficiently robust for any anticipated application.

Description: A new theoretical model is introduced to describe heterodyne mixer conversion efficiency and noise (from thermal fluctuation effects) in diffusion-cooled superconducting hot-electron bolometers. The model takes into account the non-uniform internal electron temperature distribution generated by Wiedemann-Franz heat conduction, and accepts for input an arbitrary (analytical or experimental) superconducting resistance-versus- temperature curve. A non-linear large-signal solution is solved iteratively to calculate the temperature distribution, and a linear frequency-domain small-signal formulation is used to calculate conversion efficiency and noise. In the small-signal solution the device is discretized into segments, and matrix algebra is used to relate the heating modulation in the segments to temperature and resistance modulations. Matrix expressions are derived that allow single-sideband mixer conversion efficiency and coupled noise power to be directly calculated. The model accounts for self-heating and electrothermal feedback from the surrounding bias circuit.

Description: This paper presents the results of two 160-190 GHz monolithic low noise amplifiers (LNAs) fabricated with 0.07-microns pseudomorphic (PM) InAlAs/InGaAs/InP HEMT technology using a reactive ion etch (RIE) via hole process. A peak small signal gain of 9 dB was measured at 188 GHz for the first LNA with a 3-dB bandwidth from 164 to 192 GHz while the second LNA has achieved over 6-dB gain from 142 to 180 GHz. The same design (second LNA) was also fabricated with 0.08-micron gate and a wet etch process, showing a small signal gain of 6 dB with noise figure 6 dB. All the measurement results were obtained via on-wafer probing. The LNA noise measurement at 170 GHz is also the first attempt at this frequency.

Description: The technology study entailed: 1) evaluating 4 options to improve nominal range resolution from 5.25 Km (QuikScat/SeaWinds - 1A) to 1 Km.; 2) identifying changes and impacts to the SES modules; 3) defined new general purpose DSPs with greater programmability and increased systems flexibility; 4) Developing candidate approach to improve receiver noise figure by 1.4 dB at 25 C. Noise figure improves further to 2.2 dB by cooling the LNA at 0 C; 5) Defining 2 approaches to add a 3rd antenna beam port; and 6) defining packaging concepts using SES-1A modules "as is" on SAS spinning side. Investigated fully repackaged SES on the SAS spinning skirt.

Description: Recently, a method has been established to accurately calculate cold-test data for helical slow-wave structures using the three-dimensional (3-D) electromagnetic computer code, MAxwell's equations by the Finite Integration Algorithm (MAFIA). Cold-test parameters have been calculated for several helical traveLing-wave tube (TWT) slow-wave circuits possessing various support rod configurations, and results are presented here showing excellent agreement with experiment. The helical models include tape thickness, dielectric support shapes and material properties consistent with the actual circuits. The cold-test data from this helical model can be used as input into large-signal helical TWT interaction codes making It possible, for the first time, to design complete TWT via computer simulation.

Description: Recent advances in the state of the art of computer modeling offer the possibility for the first time to evaluate the effect that slow-wave structure parameter variations, such'as manufacturing tolerances, have on the cold-test characteristics of helical traveling-wave tubes (TWT's). This will enable manufacturers to determine the cost effectiveness of controlling the dimensions of the component parts of the TWT, which is almost impossible to do experimentally without building a large number of tubes and controlling several parameters simultaneously. The computer code MAxwell's equations by the Finite Integration Algorithm (MAFIA) is used in this analysis to determine the effect on dispersion and on-axis interaction impedance of several helical slow-wave circuit parameter variations, including thickness and relative dielectric constant of the support rods, tape width, and height of the metallized films deposited on the dielectric rods. Previous computer analyzes required so many approximations that accurate determinations of the effect of many relevant dimensions on tube performance were practically impossible.

Description: A sputtering deposition system capable of depositing large areas of high temperature superconducting materials was developed by CVC Products, Inc. with the support of the Jet Propulsion Laboratory SBIR (Small Business Innovative Research) program. The system was devleoped for NASA to produce high quality films of high temperature superconducting material for microwave communication system components. The system is also being used to deposit ferroelectric material for capacitors and the development of new electro-optical materials.2002103899

Description: PixelVision, Inc., has developed a series of integrated imaging engines capable of high-resolution image capture at dynamic speeds. This technology was used originally at Jet Propulsion Laboratory in a series of imaging engines for a NASA mission to Pluto. By producing this integrated package, Charge-Coupled Device (CCD) technology has been made accessible to a wide range of users.

Description: Under an SBIR contract, EMC Technology, Inc., was funded to develop a family of Temperature Compensating Attenuators. These devices are used to compensate for changes in amplifier gain with temperatures. Special thermistor materials were developed that not only satisfied NASA requirements, but also proved useful on several new commercial products. New Thermopad devices with greater compensation and lower loss were developed and used by companies such as Hughes Space and Communications, Motorola, Lucent, Ericsson, and General Instrument. A Power Sensing Termination (Smartload) was also developed for use in communication systems that require accurate, reliable, low cost power detection for level control and alarm circuits.

Description: With technical assistance from Marshall Space Flight Center and Kennedy Space Center, Protective Cable and Wire developed Lightning Retardant Cable (LRC). LRC improves lightning protection over standard coaxial cable by 100 percent. The LRC design keeps lightning from traveling through the cable, preventing damage to satellites, antennas, and cable systems. LRC is now being used in homes as well as airports.

Description: AvanTeco Corporation has developed a moisture/contaminant sensor chip. This newly developed chip rapidly responds to the presence of moisture, especially in condensed form and in presence of ionic impurities. It determines whether moisture has permeated a hermetically sealed package or a plastic encapsulated microcircuit. The sensor chip was designed as a "go/no go" chip, which is assembled with other chips in a multi-chip module to assess the risk of failure for the entire module. It has been commercialized and is sold by Revtek, Inc.

Description: Single-event gate rupture (SEGR)in vertical power MOSFETs is induced by charge deposited in the epitaxial region (below the gate oxide) in concert with the weakening of the oxide, both are a result of the ion passage.

Description: This paper compares low-paper op-amps, OPA241 (bipolar) and OPA336 (CMOS), from Burr-Brown, MAX473 (bipolar) and MAX409 (CMOS), characterizing their total dose response with a single 2.7V power supply voltage.

Description: Proton testing of linear circuits has identified devices where significantly more damage occurs at equivalent total dose levels with protons than tests with gamma rays.

Description: Kilovac, a division of CII Technologies, developed several relays as a result of its work for the space station under subcontract to Rocketdyne and Lewis Research Center. Two of the products originally developed for NASA, the EV250 and the H-19 relay, are now commercially available. The EV250 is in testing for a light rail electric train application and currently used by automobile manufacturers. The H-19 relay is used by the underwater cable industry.

Description: Spacecraft may seem almost magical in their ability to coordinate a variety of instruments to explore unknown worlds.

Description: Ballistic-electron-emission (BEEM) and spectroscopy have been used to characterize the Pd/GaN and Au/GaN interfaces.

Description: A variable resolution CMOS active pixel image sensor that enhances S/N ratio at low illumination level is presented.

Description: Spacecraft photovoltaic arrays (PVA's) must be carefully handled during ground integration processing and transportation to the launch site. Care is exercised to avoid damage that could degrade on-orbit electrical performance. Because of this damage risk, however, PVA's are typically deployed and illuminated with a light source so performance characteristics can be measured prior to launch. For large-area arrays, such as the Mir Cooperative Solar Array (2.7- by 18-m) and the International Space Station PVA blankets (4.6- by 31.7-m), this integrity check becomes resource intensive. Large test support structures are needed to offload the array during deployment in 1g, and large-aperture illumination equipment is required to uniformly illuminate array panels. Significant program time, funds, and manpower must be allocated for this kind of test program. Alternatively, launch site electrical performance tests can be bypassed with an attendant increase in risk.

Description: The Electrical Power Control Unit currently under development by Sundstrand Aerospace for use on the Fluids Combustion Facility of the International Space Station is the precursor of modular power distribution and conversion concepts for future spacecraft and aircraft applications. This unit combines modular current-limiting flexible remote power controllers and paralleled power converters into one package. Each unit includes three 1-kW, current-limiting power converter modules designed for a variable-ratio load sharing capability. The flexible remote power controllers can be used in parallel to match load requirements and can be programmed for an initial ON or OFF state on powerup. The unit contains an integral cold plate. The modularity and hybridization of the Electrical Power Control Unit sets the course for future spacecraft electrical power systems, both large and small. In such systems, the basic hybridized converter and flexible remote power controller building blocks could be configured to match power distribution and conversion capabilities to load requirements. In addition, the flexible remote power controllers could be configured in assemblies to feed multiple individual loads and could be used in parallel to meet the specific current requirements of each of those loads. Ultimately, the Electrical Power Control Unit design concept could evolve to a common switch module hybrid, or family of hybrids, for both converter and switchgear applications. By assembling hybrids of a common current rating and voltage class in parallel, researchers could readily adapt these units for multiple applications. The Electrical Power Control Unit concept has the potential to be scaled to larger and smaller ratings for both small and large spacecraft and for aircraft where high-power density, remote power controllers or power converters are required and a common replacement part is desired for multiples of a base current rating.

Description: In an LED a large portion of the light produced is lost due to total internal reflection at the air-semiconductor interface. A reverse taper of the semiconductor is used to change the angle at which light strikes the interface so that a greater portion of the light is transmitted.

Description: A test bed for the in situ evaluation of electronic devices for high altitude aircraft was developed. A prototype of the test bed, suitable for operation on a research aircraft, was built and readied for ground tests. The principle investigator established a working relationship with the Project APEX team at Dryden with the intent of flying the test bed "piggyback" on an Project APEX balloon in 1998. Contact was also established with NASA contractors charged with operating the ER-2 aircraft now at Dryden.

Description: The High Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center is currently developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. The HTIES team recently fabricated and demonstrated the first semiconductor digital logic gates ever to function at 600 C.

Description: At the NASA Lewis Research Center, ferroelectric films such as SrTiO3 and Ba(sub x)Sr(sub 1-x)TiO3, are being used in conjunction with YBa(sub 2)Cu(sub 3)O(sub 7-delta) high-temperature superconducting thin films to fabricate tunable microwave components such as filters, phase shifters, and local oscillators. These structures capitalize on the variation of the dielectric constant of the ferroelectric film upon the application of a direct-current electric field, as well as on the low microwave losses of high-temperature superconductors relative to their conventional conductor counterparts. For example, the surface resistance for a YBa(sub 2)Cu(sub 3)O(sub 7-delta) thin film at 10 GHz and 77 K is more than two orders of magnitude lower than that of copper or gold at the same temperature and frequency. SrTiO3 and Ba(sub x)Sr(sub 1-x)TiO3 films are used because their crystal structure and lattice parameters are similar to those of YBa(sub 2)Cu(sub 3)O(sub 7-delta), thus enabling the growth of highly textured YBa(sub 2)Cu(sub 3)O(sub 7-delta) films with high critical current densities (i.e., greater than 1 MA/sq cm) on the underlying ferroelectric film, or alternatively, of highly textured ferroelectric film on the underlying YBa(sub 2)Cu(sub 3)O(sub 7-delta) film.

Description: There is no doubt among the designers of reflector antennas that the physical optics (PO) analysis technique is the most popular numerical technique. Powerful computer codes are available for the analysis of single or multi reflector antenna systems. Additionally, ever increasingly demand on the antenna performance necessitates the computation of antenna far field patterns under various situations. For example, in using multi reflector antennas such as, Gregorian or Cassegrain, it may become necessary to determine the total fields including the feed radiation pattern, subreflector scattered pattern and the main reflector scattered pattern. In these situations, the common practice is to sum up various scattered fields and the incident field contributions to obtain the desired total field, it is the purpose of this paper to demonstrate that the typical approach based on the far field pattern of the feed would result into erroneous result and special care must be exercised to obtain the correct result. This will be demonstrated through a detailed investigation of a representative test case.

Description: Microstrip reflect arrays offer a flat profile and light weight, combined with many of the electrical characteristics of reflector antennas. Previous work [1]-[7] has demonstrated a variety of microstrip reflect arrays, using different elements at a range of frequencies. In this paper we describe the use of crossed dipoles as reflecting elements in a microstrip reflectarray. Theory of the solution will be described, with experimental results for a 6" square reflectarray operating at 28 GHz. The performance of crossed dipoles will be directly compared with microstrip patches, in terms of bandwidth and loss. We also comment on the principle of operation of reflectarray elements, including crossed dipoles, patches of variable length, and patch elements with tuning stubs. This research was prompted by the proposed concept of overlaying a flat printed reflectarray on the surface of a spacecraft solar panel. Combining solar panel and antenna apertures in this way would lead to a reduction in weight and simpler deployment, with some loss of flexibility in independently pointing the solar panel and the antenna. Using crossed dipoles as reflectarray elements will minimize the aperture blockage of the solar cells, in contrast to the use of elements such as microstrip patches.

Description: The Mir Cooperative Solar Array (MCSA) was developed jointly by the United States and Russia to provide approximately 6 kW of photovoltaic power to the Russian space station Mir. The MCSA was launched to Mir in November 1995 and installed on the Kvant-1 module in May 1996, where it has been performing well to date. Since the MCSA panels are nearly identical to those of the International Space Station (ISS), MCSA operation offered an opportunity to gather multiyear performance data on this technology prior to its implementation on the ISS. Initial, on-orbit electrical performance and temperature data were measured in June and December of 1996.

Description: Recently, Lewis developed and demonstrated a high-voltage, 1-kW dc/dc converter that operates from room temperature to -184 C. A power supply designed for use in a NASA ion beam propulsion system was utilized as a starting point for the design of a low- (wide-) temperature dc/dc converter. For safety, we decided to halve the output voltage and power level, so the converter was designed for an 80-Vdc input and a 550-Vdc output at 1 kW.

Description: Concern over the interference of stray radiofrequency (RF) emissions with key aircraft avionics is evident during takeoff and landing of every commercial flight when the flight attendant requests that all portable electronics be switched off. The operation of key radio-based avionics (such as glide-slope and localizer approach instruments) depends on the ability of front-end RF receivers to detect and amplify desired information signals while rejecting interference from undesired RF sources both inside and outside the aircraft. Incidents where key navigation and approach avionics malfunction because of RF interference clearly represent an increasing threat to flight safety as the radio spectrum becomes more crowded. In an initial feasibility experiment, the U.S. Army Research Laboratory and the NASA Lewis Research Center recently demonstrated the strategic use of silicon carbide (SiC) semiconductor components to significantly reduce the susceptibility of an RF receiver circuit to undesired RF interference. A pair of silicon carbide mixer diodes successfully reduced RF interference (intermodulation distortion) in a prototype receiver circuit by a factor of 10 (20 dB) in comparison to a pair of commercial silicon-based mixer diodes.

Description: A novel micromechanical magnetic sensor has been built and tested.

Description: Power MOSFET devices are susceptible to heavy-ion induced Single-Event Gate Rupture. Computer modeling show that intense electric field transients can trigger the SEGR phenomenon.

Description: Ball Grid Array (BGA) is an important technology for utilizing higher pin counts, without the attendant handling and processing problems of the peripheral leaded packages. They are also robust in processing because of their higher pitch (0.050 inches typical), better lead rigidity, and self-alignment characteristics during reflow processing.

Description: The continued down-scaling of electronic devices, in particular the commercially dominant MOSFET, will force a fundamental change in the process of new electronics technology development in the next five to ten years. The cost of developing new technology generations is soaring along with the price of new fabrication facilities, even as competitive pressure intensifies to bring this new technology to market faster than ever before. To reduce cost and time to market, device simulation must become a more fundamental, indeed dominant, part of the technology development cycle. In order to produce these benefits, simulation accuracy must improve markedly. At the same time, device physics will become more complex, with the rapid increase in various small-geometry and quantum effects. This work describes both an approach to device simulator development and a physical model which advance the effort to meet the tremendous electronic device simulation challenge described above. The device simulation approach is to specify the physical model at a high level to a general-purpose (but highly efficient) partial differential equation solver (in this case PROPHET, developed by Lucent Technologies), which then simulates the model in 1-D, 2-D, or 3-D for a specified device and test regime. This approach allows for the rapid investigation of a wide range of device models and effects, which is certainly essential for device simulation to catch up with, and then stay ahead of, electronic device technology of the present and future. The physical device model used in this work is the density-gradient (DG) quantum correction to the drift-diffusion model [Ancona, Phys. Rev. B 35(5), 7959 (1987)]. This model adds tunneling and quantum smoothing of carrier density profiles to the drift-diffusion model. We used the DG model in 1-D and 2-D (for the first time) to simulate both bipolar and unipolar devices. Simulations of heavily-doped, short-base diodes indicated that the DG quantum corrections do not have a large effect on the IN characteristics of electronic devices without heteroj unction s. On the other hand, ultra-small MOSFETs certainly exhibit important quantum effects that the DG model will include: quantum repulsion of the inversion and gate charges from the oxide interfaces, and quantum tunneling through thin gate oxides. We present initial results of 2-D DG simulations of ultra-small MOSFETs. Subtle but important issues involving the specification of the model, boundary conditions, and interface constraints for DG simulation of MOSFETs will also be illuminated.

Description: The carbon Nanotube junctions have recently emerged as excellent candidates for use as the building blocks in the formation of nanoscale electronic devices. While the simple joint of two dissimilar tubes can be generated by the introduction of a pair of heptagon-pentagon defects in an otherwise perfect hexagonal grapheme sheet, more complex joints require other mechanisms. In this work we explore structural and electronic properties of complex 3-point junctions of carbon nanotubes using a generalized tight-binding molecular-dynamics scheme.

Description: A cryocooled Compensated Sapphire Oscillator (CSO), developed for the Cassini Ka-band Radio Science experiment, and operating in the 8K - 10K temperature range was previously demonstrated to show ultra-high stability of sigma(sub y) = 2.5 x 10 (exp -15) for measuring times 200 seconds less than or equal to tau less than or equal to 600 seconds using a hydrogen maser as reference. We present here test results for a second unit which allows CSO short-term stability and phase noise to be measured for the first time. Also included are design details of a new RF receiver and an intercomparison with the first CSO unit. Cryogenic oscillators operating below about 10K offer the highest possible short term stability of any frequency sources. However, their use has so far been restricted to research environments due to the limited operating periods associated with liquid helium consumption. The cryocooled CSO is being built in support of the Cassini Ka-band Radio Science experiment and is designed to operate continuously for periods of a year or more. Performance targets are a stability of 3-4 x 10 (exp -15) (1 second less than or equal to tau less than or equal to 100 seconds) and phase noise of -73dB/Hz @ 1Hz measured at 34 GHz. Installation in 5 stations of NASA's deep space network (DSN) is planned in the years 2000 - 2002. In the previous tests, actual stability of the CSO for measuring times tau less than or equal to 200 seconds could not be directly measured, being masked by short-term fluctuations of the H-maser reference. Excellent short-term performance, however, could be inferred by the success of an application of the CSO as local oscillator (L.O.) to the JPL LITS passive atomic standard, where medium-term stability showed no degradation due to L.O. instabilities at a level of (sigma)y = 3 x 10 (exp -14)/square root of tau. A second CSO has now been constructed, and all cryogenic aspects have been verified, including a resonator turn-over temperature of 7.907 K, and Q of 7.4 x 10 (exp 8). These values compare to a turn-over of 8.821 K and Q of 1.0 x 10 (exp 9) for the first resonator. Operation of this second unit provides a capability to directly verify for the first time the short-term (1 second less than or equal to tau less than or equal to 200 seconds) stability and the phase noise of the CSO units. The RF receiver used in earlier tests was sufficient to meet Cassini requirements for tau greater than or equal to 10 seconds but had short-term stability limited to 2-4 x 10 (exp -14) at tau = 1 second, a value 10 times too high to meet our requirements. A new low-noise receiver has been designed to provide approximately equal to 10-15 performance at 1 second, and one receiver is now operational, demonstrating again short-term CSO performance with H maser-limited stability. Short-term performance was degraded in the old receiver due to insufficient tuning bandwidth in a 100MHZ quartz VCO that was frequency-locked to the cryogenic sapphire resonator. The new receivers are designed for sufficient bandwidth, loop gain and low noise to achieve the required performance.

Description: In the glass cockpit, it's not uncommon to hear exclamations such as "why is it doing that?". Sometimes pilots ask "what were they thinking when they set it this way?" or "why doesn't it tell me what it's going to do next?". Pilots may hold a conceptual model of the automation that is the result of fleet lore, which may or may not be consistent with what the engineers had in mind. But what did the engineers have in mind? In this study, we present some of the underlying assumptions surrounding the glass cockpit. Engineers and designers make assumptions about the nature of the flight task; at the other end, instructor and line pilots make assumptions about how the automation works and how it was intended to be used. These underlying assumptions are seldom recognized or acknowledged, This study is an attempt to explicitly arti culate such assumptions to better inform design and training developments. This work is part of a larger project to support training strategies for automation.

Description: The possibility of nanolithography of silicon and germanium surfaces with bare carbon nanotube tips of scanning probe microscopy devices is considered with large scale classical molecular dynamics (MD) simulations employing Tersoff's reactive many-body potential for heteroatomic C/Si/Ge system. Lithography plays a key role in semiconductor manufacturing, and it is expected that future molecular and quantum electronic devices will be fabricated with nanolithographic and nanodeposition techniques. Carbon nanotubes, rolled up sheets of graphene made of carbon, are excellent candidates for use in nanolithography because they are extremely strong along axial direction and yet extremely elastic along radial direction. In the simulations, the interaction of a carbon nanotube tip with silicon surfaces is explored in two regimes. In the first scenario, the nanotubes barely touch the surface, while in the second they are pushed into the surface to make "nano holes". The first - gentle scenario mimics the nanotube-surface chemical reaction induced by the vertical mechanical manipulation of the nanotube. The second -digging - scenario intends to study the indentation profiles. The following results are reported in the two cases. In the first regime, depending on the surface impact site, two major outcomes outcomes are the selective removal of either a single surface atom or a surface dimer off the silicon surface. In the second regime, the indentation of a silicon substrate by the nanotube is observed. Upon the nanotube withdrawal, several surface silicon atoms are adsorbed at the tip of the nanotube causing significant rearrangements of atoms comprising the surface layer of the silicon substrate. The results are explained in terms of relative strength of C-C, C-Si, and Si-Si bonds. The proposed method is very robust and does not require applied voltage between the nanotube tips and the surface. The implications of the reported controllable etching and hole-creating for nanolithography on silicon are discussed in detail.

Description: Recent experimental and theoretical attempts and results indicate two distinct broad pathways towards future molecular electronic devices and architectures. The first is the approach via Tour type ladder molecules and their junctions which can be fabricated with solution phase chemical approaches. Second are fullerenes or nanotubules and their junctions which may have better conductance, switching and amplifying characteristics but can not be made through well controlled and defined chemical means. A hybrid approach combining the two pathways to take advantage of the characteristics of both is suggested. Dimension and scale of such devices would be somewhere in between isolated molecule and nanotubule based devices but it maybe possible to use self-assembly towards larger functional and logicalunits.

Description: There have been many studies of the linear response ac conductance of a double barrier resonant tunneling structure (DBRTS), both at zero and finite dc biases. While these studies are important, they fail to self consistently include the effect of the time dependent charge density in the well. In this paper, we calculate the ac conductance at both zero and finite do biases by including the effect of the time dependent charge density in the well in a self consistent manner. The charge density in the well contributes to both the flow of displacement currents in the contacts and the time dependent potential in the well. We find that including these effects can make a significant difference to the ac conductance and the total ac current is not equal to the simple average of the non-selfconsistently calculated conduction currents in the two contacts. This is illustrated by comparing the results obtained with and without the effect of the time dependent charge density included correctly. Some possible experimental scenarios to observe these effects are suggested.

Description: Quasi-optical oscillators were proposed a little more than ten years ago as a means of developing the power levels needed for applications at millimeter frequencies using large numbers of individual semiconductor devices each of which produces only a modest amount of power [J.W. Mink, IEEE Trans. MTT., vol. 34, p. 273, 19861. An operating system was demonstrated soon after [Z.B. Popovic et. al, Int. J. Infrared and Millimeter Waves, v. 9, p. 647, 1988] in the form of a so-called grid oscillator. This device constituted a rectangular array of oscillating devices that are mutually coupled so that they oscillator coherently. The interconnecting lines in one direction serve as radiators so that the oscillators radiate directly, and the radiated fields add. Subsequently, coupled oscillators using resonant transmission line lengths was demonstrated by Mortazawi and Itoh [IEEE Trans. MTT., vol. 38, p. 86,1990). In recent work, coupled-oscillator power combiners have received less attention, with amplifier/combiners receiving more attention. Specific weaknesses of spatial-combining oscillators have motivated this transition. Namely, the oscillators employ low-Q resonators (resulting in low signal quality) and no clear means of modulation has been identified until recently. In this presentation, we review coupled-oscillator combiners in broad terms, indicating the features that make particular systems viable. We indicate how these features can be reconciled to functional requirements for system applications. Comparisons are drawn between two approaches to obtain mutual coupling: One employs low-Q oscillator circuits at each site, with concomitantly high propensity for the oscillators to couple. The other approach employs moderate-Q oscillators at each site with the concomitant requirement to tune the oscillators so that they share a range of frequencies over which they can couple and lock. In either case, precise frequency control and modulation can be achieved through locking to an external frequency source that ensures high quality signals. A recent development in coupled-oscillator arrays provides a means for beam-steering the radiation field of coupled oscillators through de-tuning of the edge elements in the array. This detuning introduces a progressive phase shift across the oscillator array. This 0 suggests architectures that can replace the functionality of a phased array without the cost 0 incurred by phase shifters. A comprehensive theory of the phase interactions among devices in such arrays is under development [e.g., Pogorzelski, York, and Maccarini, 1998 AP-S International Symposium, Atlanta, GA. June, 19981.

Description: When the device size is reduced down to 0.07 micrometers, the number of dopant atoms in the channel will no longer be macroscopic, typically less than a hundred. A spatial distribution of these dopant atoms will fluctuate statistically from device to device even in identically designed devices, and this places a serious limitation for integration. It is, however, impractical to control dopant positions within atomic dimension. One fundamental solution to this problem is to create electronics with atomically precise, but preferably simple structures. Atomic chains, precise structures of adatoms created on an atomically regulated surface, are candidates for constituent components in future electronics. All the adatoms will be placed at designated positions on the substrate, and all the device structures will be precise, free from any deviations. It was predicted using the tight-binding calculation with universal parameters that silicon chains were metallic and magnesium chains were semiconducting regardless of the lattice spacing, and a possible doping method was also proposed. In these treatments, the substrate was assumed to serve as a non-interacting template holding the adatoms without a formation of chemical bonding with substrate atoms. However, this scheme may not be easy to implement experimentally. Adatoms will have to be fixed with a van der Waals force on the substrate, but the force is generally weak and an extremely low temperature environment has to be prepared to suppress their unwanted thermal displacement. It may be logical to seek a scheme to allow the adatoms to form chemical bonding with the substrate atoms and secure their positions. The substrate effects are studied in detail.

Description: This viewgraph presentation is focused on the general aspect of atomic chain electronics that I have been studying. Results have been published before, but are being rederived here using a new physical/mathematical picture/model, which deepens the physical understanding. Precise adatom structures can be used as a template on a regulated surface with no uncertainty.

Description: A new version of coplanar waveguide (CPW) with electrically narrow ground strips 14 has been developed for microwave integrated circuits. This transmission line, referred to by Finite Ground Coplanar (FGC) waveguide, has several advantages over conventional coplanar waveguide. Since the ground strips are narrow, parasitic resonances that develop when the CPW is placed on a carrier or in a package are eliminated. In addition, the narrow ground strips permit the integration of lumped and distributed circuit elements in the ground strips as well as in the center strip to reduce the circuit size and improve its performance. Finally, the coupling between adjacent FGC transmission lines is lower than the coupling between CPW lines for the same spacing between the lines. All of these attributes of FGC are presented in this paper.

Description: The allowable operating currents of electrical wiring when used in the space vacuum environment is predominantly determined by the maximum operating temperature of the wire insulation. For Kapton insulated wire this value is 200 C. Guidelines provided in the Goddard Space Flight Center (GSFC) Preferred Parts List (PPL) limit the operating current of wire within vacuum to ensure the maximum insulation temperature is not exceeded. For 20 AWG wire, these operating parameters are: (1) 3.7 amps per wire; (2) bundle of 15 or more wires; (3) 70 C environment: and (4) vacuum of 10(exp -5) torr or less. To determine the behavior and temperature of electrical wire at different operating conditions, a thermal vacuum test was performed on a representative electrical harness of the Hubble Space Telescope (HST) power distribution system. This paper describes the test and the results.

Description: The applicability of a charge balanced electrochromic device to modulate the frequencies in the thermal infrared region is examined in this study. The device consisted of a transparent conductor, WO3 anode, PMMA/LiClO4 electrolyte, V2O5 cathode and transparent conductor. The supporting structure in the device is SnO2 coated glass and the edges are sealed with epoxy to reduce moisture absorption. The performance evaluation comprised of cyclic voltammetric measurements and determination of transmittance at various wavelengths. The device was subjected to anodic and cathodic polarization by sweeping the potential at a rate of 10 mV/sec from -0.8V to 1.8V. The current versus voltage profile indicated no reaction between -0.5 and +0.5 V. The device is colored green at 1.8V with a transmittance of 5% at a wavelength, lambda=900 nm and colorless at -0.8V with a transmittance of 74% at lambda=500 nm. The optical modulation is limited to 400-1500 nm and there is no activity in the thermal infrared. The switching time is 75 seconds for transmittance to decrease from 74% to 50%. The device yielded reproducible values for transmittance when cycled between colored and bleached states by application of 1.8V and -0.8V, respectively.

Description: Given the high density (approx. 10(exp 4)/sq cm) of elementary screw dislocations (Burgers vector = 1c with no hollow core) in commercial SiC wafers and epilayers, all appreciable current (greater than 1 A) SiC power devices will likely contain elementary screw dislocations for the foreseeable future. It is therefore important to ascertain the electrical impact of these defects, particularly in high-field vertical power device topologies where SiC is expected to enable large performance improvements in solid-state high-power systems. This paper compares the DC-measured reverse-breakdown characteristics of low-voltage (less than 250 V) small-area (less than 5 x 10(exp -4)/sq cm) 4H-SiC p(+)n diodes with and without elementary screw dislocations. Compared to screw dislocation-free devices, diodes containing elementary screw dislocations exhibited higher pre-breakdown reverse leakage currents, softer reverse breakdown I-V knees, and highly localized microplasmic breakdown current filaments. The observed localized 4H-SiC breakdown parallels microplasmic breakdowns observed in silicon and other semiconductors, in which space-charge effects limit current conduction through the local microplasma as reverse bias is increased.

Description: The architecture of High Rate (600 Mega-bits per second) Digital Demodulator (HRDD) ASIC capable of demodulating BPSK and QPSK modulated data is presented in this paper. The advantages of all-digital processing include increased flexibility and reliability with reduced reproduction costs. Conventional serial digital processing would require high processing rates necessitating a hardware implementation in other than CMOS technology such as Gallium Arsenide (GaAs) which has high cost and power requirements. It is more desirable to use CMOS technology with its lower power requirements and higher gate density. However, digital demodulation of high data rates in CMOS requires parallel algorithms to process the sampled data at a rate lower than the data rate. The parallel processing algorithms described here were developed jointly by NASA's Goddard Space Flight Center (GSFC) and the Jet Propulsion Laboratory (JPL). The resulting all-digital receiver has the capability to demodulate BPSK, QPSK, OQPSK, and DQPSK at data rates in excess of 300 Mega-bits per second (Mbps) per channel. This paper will provide an overview of the parallel architecture and features of the HRDR ASIC. In addition, this paper will provide an over-view of the implementation of the hardware architectures used to create flexibility over conventional high rate analog or hybrid receivers. This flexibility includes a wide range of data rates, modulation schemes, and operating environments. In conclusion it will be shown how this high rate digital demodulator can be used with an off-the-shelf A/D and a flexible analog front end, both of which are numerically computer controlled, to produce a very flexible, low cost high rate digital receiver.

Description: Low temperature electronics are of great interest for space exploration programs. These include missions to the outer planets, earth-orbiting and deep-space probes, remote-sensing and communication satellites. Terrestrial applications would also benefit from the availability of low temperature electronics. Power components capable of low temperature operation would, thus, enhance the technologies needed for the development of advanced power systems suitable for use in harsh environments. In this work, ceramic and solid tantalum capacitors were evaluated in terms of their dielectric properties as a function of temperature and at various frequencies. The surface-mount devices were characterized in terms of their capacitance stability and dissipation factor in the frequency range of 50 Hz to 100 kHz at temperatures ranging from room temperature (20 deg. C) to about liquid nitrogen temperature (-190 deg. C). The results are discussed and conclusions made concerning the suitability of the capacitors investigated for low temperature applications.

Description: The characteristics for a MFSFET (metal-ferroelectric-semiconductor field effect transistor) is very different than a conventional MOSFET and must be modeled differently. The drain current has a hysteresis shape with respect to the gate voltage. The position along the hysteresis curve is dependent on the last positive or negative polling of the ferroelectric material. The drain current also has a logarithmic decay after the last polling. A model has been developed to describe the MFSFET drain current for both gate voltage on and gate voltage off conditions. This model takes into account the hysteresis nature of the MFSFET and the time dependent decay. The model is based on the shape of the Fermi-Dirac function which has been modified to describe the MFSFET's drain current. This is different from the model proposed by Chen et. al. and that by Wu.

Description: With recent advance in the epitaxial growth of silicon-germanium heterojunction, Si/SiGe HBTs with high f(sub max) and f(sub T) have received great attention in MMIC applications. In the past year, technologies for mesa-type Si/SiGe HBTs and other lumped passive components with high resonant frequencies have been developed and well characterized for circuit applications. By integrating the micromachined lumped passive elements into HBT fabrication, multi-stage amplifiers operating at 20 GHz have been designed and fabricated.

Description: This report outlines the proposers' progress toward MIT's contribution to the X-Ray Imaging Spectrometer (XIS) experiment on the Japanese ASTRO-E mission. The report discusses electrical system design, mechanical system design, and ground support equipment.

Description: The device feature size continues to be on a downward trend with a simultaneous upward trend in wafer size to 300 mm. Predictive models are needed more than ever before for this reason. At NASA Ames, a Device and Process Modeling effort has been initiated recently with a view to address these issues. Our activities cover sub-micron device physics, process and equipment modeling, computational chemistry and material science. This talk would outline these efforts and emphasize the interaction among various components. The device physics component is largely based on integrating quantum effects into device simulators. We have two parallel efforts, one based on a quantum mechanics approach and the second, a semiclassical hydrodynamics approach with quantum correction terms. Under the first approach, three different quantum simulators are being developed and compared: a nonequlibrium Green's function (NEGF) approach, Wigner function approach, and a density matrix approach. In this talk, results using various codes will be presented. Our process modeling work focuses primarily on epitaxy and etching using first-principles models coupling reactor level and wafer level features. For the latter, we are using a novel approach based on Level Set theory. Sample results from this effort will also be presented.

Description: Binary blazed gratings are investigated as highly efficient waveguide couplers. Equations are derived for the design of efficient binary blazed grating waveguide couplers. The design approach relates waveguide blazed grating equations to Artificial Index Grating (AIG) equations to emulate a blazed grating. Using these relationships, binary blazed gratings can be accurately designed to output a single mode at a desired output angle. Binary blazed grating couplers can achieve single mode cladding output without substrate" radiation output modes. Much higher output angles can be achieved than with rectangular grating couplers. The use of the AIG grating structure simplifies fabrication approaches. Waveguide couplers were designed using these equations.

Description: Carbon nanotubes and the nanotube heterojunctions have recently emerged as excellent candidates for nanoscale molecular electronic device components. Experimental measurements on the conductivity, rectifying behavior and conductivity-chirality correlation have also been made. While quasi-one dimensional simple heterojunctions between nanotubes with different electronic behavior can be generated by introduction of a pair of heptagon-pentagon defects in an otherwise all hexagon graphene sheet. Other complex 3- and 4-point junctions may require other mechanisms. Structural stability as well as local electronic density of states of various nanotube junctions are investigated using a generalized tight-binding molecular dynamics (GDBMD) scheme that incorporates non-orthogonality of the orbitals. The junctions investigated include straight and small angle heterojunctions of various chiralities and diameters; as well as more complex 'T' and 'Y' junctions which do not always obey the usual pentagon-heptagon pair rule. The study of local density of states (LDOS) reveal many interesting features, most prominent among them being the defect-induced states in the gap. The proposed three and four pointjunctions are one of the smallest possible tunnel junctions made entirely of carbon atoms. Furthermore the electronic behavior of the nanotube based device components can be taylored by doping with group III-V elements such as B and N, and BN nanotubes as a wide band gap semiconductor has also been realized in experiments. Structural properties of heteroatomic nanotubes comprising C, B and N will be discussed.

Description: Single substrate device is formed to have an image acquistition device and a controller. The controller on the substrate controls the system operation.

Description: As integrated circuits become more sensitive to charged particles and neutrons, anomalous performance due to single event effects (SEE) is a concern and requires experimental verification and quantification. The Center for Applied Radiation Research (CARR) at Prairie View A&M University has developed experiments as a participant in the NASA ER-2 Flight Program, the APEX balloon flight program and the Student Launch Program. Other high altitude and ground level experiments of interest to DoD and commercial applications are being developed. The experiment characterizes the SEE behavior of high speed and high density SRAM's. The system includes a PC-104 computer unit, an optical drive for storage, a test board with the components under test, and a latchup detection and reset unit. The test program will continuously monitor the stored checkerboard data pattern in the SW and record errors. Since both the computer and the optical drive contain integrated circuits, they are also vulnerable to radiation effects. A latchup detection unit with discrete components will monitor the test program and reset the system when necessary. The first results will be obtained from the NASA ER-2 flights, which are now planned to take place in early 1998 from Dryden Research Center in California. The series of flights, at altitudes up to 70,000 feet, and a variety of flight profiles should yield a distribution of conditions for correlating SEES. SEE measurements will be performed from the time of aircraft power-up on the ground throughout the flight regime until systems power-off after landing.

Description: A capacitive type proximity sensor having improved range and sensitivity between a surface of arbitrary shape and an intruding object in the vicinity of the surface having one or more outer conductors on the surface which serve as capacitive sensing elements shaped to conform to the underlying surface of a machine. Each sensing element is backed by a reflector driven at the same voltage and in phase with the corresponding capacitive sensing element. Each reflector, in turn, serves to reflect the electric field lines of the capacitive sensing element away from the surface of the machine on which the sensor is mounted so as to enhance the component constituted by the capacitance between the sensing element and an intruding object as a fraction of the total capacitance between the sensing element and ground. Each sensing element and corresponding reflecting element are electrically driven in phase, and the capacitance between the sensing elements individually and the sensed object is determined using circuitry known to the art. The reflector may be shaped to shield the sensor and to shape its field of view, in effect providing an electrostatic lensing effect. Sensors and reflectors may be fabricated using a variety of known techniques such as vapor deposition, sputtering, painting, plating, or deformation of flexible films, to provide conformal coverage of surfaces of arbitrary shape.

Description: A substrate for future atomic chain electronics, where adatoms are placed at designated positions and form atomically precise device components, is studied theoretically. The substrate has to serve as a two-dimensional template for adatom mounting with a reasonable confinement barrier and also provide electronic isolation, preventing unwanted coupling between independent adatom structures. However, the two requirements conflict. For excellent electronic isolation, we may seek adatom confinement via van der Waals interaction without chemical bonding to the substrate atoms, but the confinement turns out to be very weak and hence unsatisfactory. An alternative chemical bonding scheme with excellent structural strength is examined, but even fundamental adatom chain properties such as whether chains are semiconducting or metallic are strongly influenced by the nature of the chemical bonding, and electronic isolation is not always achieved. Conditions for obtaining semiconducting chains with well-localized surface-modes, leading to good isolation, are clarified and discussed.

Description: X-ray masking apparatus includes a frame having a supporting rim surrounding an x-ray transparent region, a thin membrane of hard inorganic x-ray transparent material attached at its periphery to the supporting rim covering the x-ray transparent region and a layer of x-ray opaque material on the thin membrane inside the x-ray transparent region arranged in a pattern to selectively transmit x-ray energy entering the x-ray transparent region through the membrane to a predetermined image plane separated from the layer by the thin membrane. A method of making the masking apparatus includes depositing back and front layers of hard inorganic x-ray transparent material on front and back surfaces of a substrate, depositing back and front layers of reinforcing material on the back and front layers, respectively, of the hard inorganic x-ray transparent material, removing the material including at least a portion of the substrate and the back layers of an inside region adjacent to the front layer of hard inorganic x-ray transparent material, removing a portion of the front layer of reinforcing material opposite the inside region to expose the surface of the front layer of hard inorganic x-ray transparent material separated from the inside region by the latter front layer, and depositing a layer of x-ray opaque material on the surface of the latter front layer adjacent to the inside region.

Description: SIS heterodyne mixer technology based on niobium tunnel junctions has now been pushed to frequencies over 1 THz, clearly demonstrating that the SIS junctions are capable of mixing at frequencies up to twice the energy gap frequency (4 Delta/h). However, the performance degrades rapidly above the gap frequency of niobium (2 Delta/h approx. 700 GHz) due to substantial ohmic losses in the on-chip tuning circuit. To solve this problem, the tuning circuit should be fabricated using a superconducting film with a larger energy gap, such as NbN; unfortunately, NbN films often have a substantial excess surface resistance in the submillimeter band. In contrast, the SIS mixer measurements we present in this paper indicate that the losses for NbTiN thin films can be quite low.

Description: The US National Oceanic and Atmospheric Administration (NOAA) operates the Polar Operational Environmental Satellite (POES) spacecraft (among others) to support weather forecasting, severe storm tracking, and meteorological research by the National Weather Service (NWS). The latest in the POES series of spacecraft, named as NOAA-KLMNN', one is in orbit and four more are in various phases of development. The NOAA-K spacecraft was launched on May 13, 1998. Each of these spacecraft carry three Nickel-Cadmium batteries designed and manufactured by Lockheed Martin. The battery, which consists of seventeen 40 Ah cells manufactured by SAFT, provides the spacecraft power during the ascent phase, orbital eclipse and when the power demand is in excess of the solar array capability. The NOAA-K satellite is in a 98 degree inclination, 7:30AM ascending node orbit. In this orbit the satellite experiences earth occultation only 25% of the year. This paper provides a brief overview of the power subsystem, followed by the battery design and qualification, the cell life cycle test data, and the performance during launch and in orbit.

Description: The Electronic Regulator Project at TRW has constructed a breadboard system demonstrating pressure regulator operation over a wide range of flow conditions. The test hardware is composed of pneumatic-actuated, solenoid-controlled valves and associated tubing, gas volumes and transducers. System control, data recording and data reduction functions are controlled by a 486-class PC running Labview software. This breadboard system has demonstrated that a single system, using several control modes, is versatile enough to be used across the TRW spacecraft product line, from the very low Xenon flows associated with an electric propulsion system, to the high Helium flows required in a constant thrust situation such as in the AXAF spacecraft. A conceptual flight version, composed largely of off-the-shelf parts, has been designed and evaluated relative to requirements of various TRW spacecraft.

Description: The present invention is a video display device that utilizes the novel concept of generating an electronically controlled pattern of electron emission at the output of a segmented photocathode. This pattern of electron emission is amplified via a channel plate. The result is that an intense electronic image can be accelerated toward a phosphor thus creating a bright video image. This novel arrangement allows for one to provide a full color flat video display capable of implementation in large formats. In an alternate arrangement, the present invention is provided without the channel plate and a porous conducting surface is provided instead. In this alternate arrangement, the brightness of the image is reduced but the cost of the overall device is significantly lowered because fabrication complexity is significantly decreased.

Description: Schottky diodes of Palladium/SiC are good candidates for hydrogen and hydrocarbon gas sensors at elevated temperature. The detection sensibility of the diodes has been found heavily temperature dependent. In this work, emphasis has been put on the understanding of changes of physical and chemical properties of the Schottky diodes with variation of temperature. Schottky diodes were made by depositing ultra-thin palladium films onto silicon carbide substrates. The electrical and chemical properties of Pd/SiC Schottky contacts were studied by XPS and AES at different annealing temperatures. No significant change in the Schottky barrier height of the Pd/SiC contact was found in the temperature range of RT-400 C. However, both palladium diffused into SiC and silicon migrated into palladium thin film as well as onto surface were observed at room temperature. The formation of palladium compounds at the Pd/SiC interface was also observed. Both diffusion and reaction at the Pd/SiC interface became significant at 300 C and higher temperature. In addition, silicon oxide was found also at the interface of the Pd/SiC contact at high temperature. In this report, the mechanism of diffusion and reaction at the Pd/SiC interface will be discussed along with experimental approaches.

Description: We have observed enhanced bistability (hysteresis) in the current-voltage characteristics of gamma irradiated resonant tunneling diodes. This bistability occurs in the negative differential conductance region for voltages larger than 1.1 V. We discuss possible mechanisms for the observed phenomena and also discuss the measurements sensitivity to the external circuit.

Description: The behavior of silicon-based avalanche photodiodes (APD's) operated in the charge storage mode is examined. In the charge storage mode, the diodes are periodically biased to a sub-breakdown voltage and then open-circuited. During this integration period, photo-excited and thermally generated carriers are accumulated within the structure. The dynamics of this accumulation and its effects upon the avalanching of the diode warrants a detailed, fully numerical analysis. The salient features of this investigation include device sensitivity to the input photo-current including the self-quenching effect of the diode and its limitations in sensing low light levels, the dependence of the response on the bulk lifetime and hence on the generation current within the device, the initial gain, transient response, dependence of the device uniformity upon performance, and the quantity of storable charge within the device. To achieve these tasks our device simulator, STEBS-2D, was utilized. A modified current-controlled boundary condition is employed which allows for the simulation of the isolated diode after the initial reset bias has been applied. With this boundary condition, it is possible to establish a steady-state voltage on the ohmic contact and then effectively remove the device from the external circuit while still including effects from surface recombination, trapped surface charge, and leakage current from the read-out electronics.

Description: This handbook is approved for use by NASA Headquarters and all NASA Centers and is intended to provide a common framework for consistent practices across NASA programs. This handbook was developed to describe electrical grounding design architecture options for unmanned spacecraft. This handbook is written for spacecraft system engineers, power engineers, and electromagnetic compatibility (EMC) engineers. Spacecraft grounding architecture is a system-level decision which must be established at the earliest point in spacecraft design. All other grounding design must be coordinated with and be consistent with the system-level architecture. This handbook assumes that there is no one single 'correct' design for spacecraft grounding architecture. There have been many successful satellite and spacecraft programs from NASA, using a variety of grounding architectures with different levels of complexity. However, some design principles learned over the years apply to all types of spacecraft development. This handbook summarizes those principles to help guide spacecraft grounding architecture design for NASA and others.

Description: Experimental measurements of the dispersion characteristics of a C-band helix structure were carried out and compared to the dispersion characteristics found from a helix model using the three-dimensional electromagnetic computer code MAFIA. A conceptually novel design comprising a helical thread of the same pitch and inner diameter in a cylindrical waveguide also were calculated using the MAFIA code. The helical-groove structure exhibits a smaller bandwidth but at a much higher frequency range than the traditional helical structure for similar physical dimensions. It is physically more robust in construction. The interaction impedance also compares favorably with those of the conventional structure.

Description: This report will summarize some results from a multi-year research effort at NASA Langley Research Center aimed at the development of an improved capability for practical modelling of eddy current effects in magnetic suspension systems. Particular attention is paid to large-gap systems, although generic results applicable to both large-gap and small-gap systems are presented. It is shown that eddy currents can significantly affect the dynamic behavior of magnetic suspension systems, but that these effects can be amenable to modelling and measurement. Theoretical frameworks are presented, together with comparisons of computed and experimental data particularly related to the Large Angle Magnetic Suspension Test Fixture at NASA Langley Research Center, and the Annular Suspension and Pointing System at Old Dominion University. In both cases, practical computations are capable of providing reasonable estimates of important performance-related parameters. The most difficult case is seen to be that of eddy currents in highly permeable material, due to the low skin depths. Problems associated with specification of material properties and areas for future research are discussed.

Description: We describe an electronic transport model and an implementation approach that respond to the challenges of device modeling for gigascale integration. We use the density-gradient (DG) transport model, which adds tunneling and quantum smoothing of carrier density profiles to the drift-diffusion model. We present the current implementation of the DG model in PROPHET, a partial differential equation solver developed by Lucent Technologies. This implementation approach permits rapid development and enhancement of models, as well as run-time modifications and model switching. We show that even in typical bulk transport devices such as P-N diodes and BJTs, DG quantum effects can significantly modify the I-V characteristics. Quantum effects are shown to be even more significant in small, surface transport devices, such as sub-0.1 micron MOSFETs. In thin-oxide MOS capacitors, we find that quantum effects may reduce gate capacitance by 25% or more. The inclusion of quantum effects in simulations dramatically improves the match between C-V simulations and measurements. Significant quantum corrections also occur in the I-V characteristics of short-channel MOSFETs due to the gate capacitance correction.

Description: The advent of widespread distribution of digital video creates a need for automated methods for evaluating visual quality of digital video. This is particularly so since most digital video is compressed using lossy methods, which involve the controlled introduction of potentially visible artifacts. Compounding the problem is the bursty nature of digital video, which requires adaptive bit allocation based on visual quality metrics. In previous work, we have developed visual quality metrics for evaluating, controlling, and optimizing the quality of compressed still images. These metrics incorporate simplified models of human visual sensitivity to spatial and chromatic visual signals. The challenge of video quality metrics is to extend these simplified models to temporal signals as well. In this presentation I will discuss a number of the issues that must be resolved in the design of effective video quality metrics. Among these are spatial, temporal, and chromatic sensitivity and their interactions, visual masking, and implementation complexity. I will also touch on the question of how to evaluate the performance of these metrics.

Description: Adatom chains, precise structures artificially created on an atomically regulated surface, are the smallest possible candidates for future nanoelectronics. Since all the devices are created by combining adatom chains precisely prepared with atomic precision, device characteristics are predictable, and free from deviations due to accidental structural defects. In this atomic dimension, however, an analogy to the current semiconductor devices may not work. For example, Si structures are not always semiconducting. Adatom states do not always localize at the substrate surface when adatoms form chemical bonds to the substrate atoms. Transport properties are often determined for the entire system of the chain and electrodes, and not for chains only. These fundamental issues are discussed, which will be useful for future device considerations.

Description: This article discusses the development of microwave circuits on silicon substrate. Silicon, even though inexpensive, did not provide the performance required for microwave circuits. Instead the development of microwave circuits used GaAs and InP substrates. With the development of commercial usages for microwave circuits, the costs of microwave circuits became an issue. The importance of cost, and the development of Si-device capabilities and fabrication techniques, such as molecular beam epitaxy, and ultra-high chemical vapor deposition. provided the circumstances where the development of microwave circuits on silicon is now possible.

Description: It is well-known that SiC wafer quality deficiencies are delaying the realization of outstandingly superior 4H-SiC power electronics. While efforts to date have centered on eradicating micropipes (i.e., hollow core super-screw dislocations with Burgers vector greater than 2c), 4H-SiC wafers and epilayers also contain elementary screw dislocations (i.e., Burgers vector = lc with no hollow core) in densities on the order of thousands per sq cm, nearly 100-fold micropipe densities. This paper describes an initial study into the impact of elementary screw dislocations on the reverse-bias current-voltage (I-V) characteristics of 4H-SiC p(+)n diodes. First, Synchrotron White Beam X-ray Topography (SWBXT) was employed to map the exact locations of elementary screw dislocations within small-area 4H-SiC p(+)n mesa diodes. Then the high-field reverse leakage and breakdown properties of these diodes were subsequently characterized on a probing station outfitted with a dark box and video camera. Most devices without screw dislocations exhibited excellent characteristics, with no detectable leakage current prior to breakdown, a sharp breakdown I-V knee, and no visible concentration of breakdown current. In contrast devices that contained at least one elementary screw dislocation exhibited a 5% to 35% reduction in breakdown voltage, a softer breakdown I-V knee, and visible microplasmas in which highly localized breakdown current was concentrated. The locations of observed breakdown microplasmas corresponded exactly to the locations of elementary screw dislocations identified by SWBXT mapping. While not as detrimental to SiC device performance as micropipes, the undesirable breakdown characteristics of elementary screw dislocations could nevertheless adversely affect the performance and reliability of 4H-SiC power devices.

Description: This paper describes the design and development of a 250W orbit average electrical power system electronic Power Node and software for use in Low Earth Orbit missions. The mass of the Power Node is 3.6 Kg (8 lb.). The dimensions of the Power Node are 30cm x 26cm x 7.9cm (11 in. x 10.25 in x 3.1 in.) The design was realized using software, Field Programmable Gate Array (FPGA) digital logic and surface mount technology. The design is generic enough to reduce the non-recurring engineering for different mission configurations. The Power Node charges one to five, low cost, 22-cell 4 AH D-cell battery packs independently. The battery charging algorithms are executed in the power software to reduce the mass and size of the power electronic. The Power Node implements a peak-power tracking algorithm using an innovative hardware/software approach. The power software task is hosted on the spacecraft processor. The power software task generates a MIL-STD-1553 command packet to update the Power Node control settings. The settings for the battery voltage and current limits, as well as minimum solar array voltage used to implement peak power tracking are contained in this packet. Several advanced topologies are used in the Power Node. These include synchronous rectification in the bus regulators, average current control in the battery chargers and quasi-resonant converters for the Field Effect Transistor (FET) transistor drive electronics. Lastly, the main bus regulator uses a feed-forward topology with the PWM implemented in an FPGA.

Description: This paper reports the results of low dose rate (0.01-0.18 rads(Si)/sec) total ionizing dose (TID) tests performed on several types of high performance converters. The parts used in this evaluation represented devices such as a high speed flash converter, a 16-bit ADC and a voltage-to-frequency converter.

Description: Reduced coupling between adjacent striplines in LTCC packages is commonly accomplished by walls made of plated via holes. In this paper, a 3D-FEM electromagnetic simulation of stripline with filled via fences on both sides is presented. It is shown that the radiation loss of the stripline and the coupling between striplines increases if the fence is placed too close to the stripline.

Description: This presentation contains helpful pointers for successful vibroacoustic data acquisition in the following three areas: Instrumentation, Vibration Control and Pyro-shock data acquisition and analysis. A helpful bibliography is provided.

Description: Minority carrier lifetimes in epitaxial 4H-SiC p-n junction diodes were measured via an analysis of reverse recovery switching characteristics. Behavior of reverse recovery storage time (t(sub s)) as a function of initial ON-state forward current (I(sub f)) and OFF-state reverse current (I(sub R)) followed well-documented trends which have been observed for decades in silicon p-n rectifiers. Average minority carrier (hole) lifetimes (tau(sub p)) calculated from plots of t(sub s) vs I(sub R)/I(sub F) strongly decreased with decreasing device area. Bulk and perimeter components of average hole lifetimes were separated by plotting tau(sub p) as a function of device perimeter-to-area ratio (P/A). This plot reveals that perimeter recombination is dominant in these devices, whose areas are all less than 1 square mm. The bulk minority carrier (hole) lifetime extracted from the 1/Tau(sub p) vs P/A plot is approximately 0.7 microns, well above the 60 ns to 300 ns average lifetimes obtained when perimeter recombination effects are ignored in the analysis. Given the fact that there has been little previous investigation of bipolar diode and transistor performance as a function of perimeter-to-area ratio, this work raises the possibility that perimeter recombination may be partly responsible for poor effective minority carrier lifetimes and limited performance obtained in many previous SiC bipolar junction devices.

Description: Conventional methods used to measure the cold- test interaction impedance of helical slow-wave structures involve perturbing a helical circuit with a cylindrical dielectric rod placed on the central axis of the circuit It has been shown that the difference in resonant frequency or axial phase shift between the perturbed and unperturbed circuits can be related to the interaction impedance. However, because of the complex configuration of the helical circuit, deriving this relationship involves several approximations. With the advent of accurate three-dimensional (3-D) helical circuit models, these standard approximations can be fully Investigated. This paper addresses the most prominent approximations made in the analysis for measured interaction impedance by Lagerstrom and investigates their accuracy using the 3-D simulation code MAFIA. It is shown that a more accurate value of interaction impedance can be obtained by using 3-D computational methods rather than performing costly and time consuming experimental cold-test measurements.

Description: A review is presented of more than 20 years of research conducted at NASA Lewis Research Center on the suppression of secondary electron emission (SEE) for the enhancement of the efficiency of vacuum electron devices with multistage depressed collectors. This paper will include a description of measurement techniques, data from measurements of SEE on a variety of materials of engineering interest and methods of surface treatment for the suppression of SEE. In the course of this work the lowest secondary electron yield ever reported was achieved for ion textured graphite, and, in a parallel line of research, the highest yield was obtained for chemical vapor deposited thin diamond films.

Description: It is well-known that SiC wafer quality deficiencies are delaying the realization of outstandingly superior 4H-SiC power electronics. While efforts to date have centered on eradicating micropipes (i.e., hollow core super-screw dislocations with Burgers vectors greater than or equal to 2c), 4H-SiC wafers and epilayers also contain elementary screw dislocations (i.e., Burgers vector = 1c with no hollow core) in densities on the order of thousands per sq cm, nearly 100-fold micropipe densities. While not nearly as detrimental to SiC device performance as micropipes, it has recently been demonstrated that elementary screw dislocations somewhat degrade the reverse leakage and breakdown properties of 4H-SiC p(+)n diodes. Diodes containing elementary screw dislocations exhibited a 5% to 35% reduction in breakdown voltage, higher pre-breakdown reverse leakage current, softer reverse breakdown I-V knee, and microplasmic breakdown current filaments that were non-catastrophic as measured under high series resistance biasing. This paper details continuing experimental and theoretical investigations into the electrical properties of 4H-SiC elementary screw dislocations. The nonuniform breakdown behavior of 4H-SiC p'n junctions containing elementary screw dislocations exhibits interesting physical parallels with nonuniform breakdown phenomena previously observed in other semiconductor materials. Based upon experimentally observed dislocation-assisted breakdown, a re-assessment of well-known physical models relating power device reliability to junction breakdown has been undertaken for 4H-SiC. The potential impact of these elementary screw dislocation defects on the performance and reliability of various 4H-SiC device technologies being developed for high-power applications will be discussed.