ISSN:
1432-0630
Keywords:
42.60
;
42.80
;
42.10
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract On the basis of the Helmholtz equation the far-field distribution is derived for double heterostructure lasers. The results show that the far-field distribution in the direction normal to the junction plane approaches a Lorentzian function, but parallel to the junction it may be approximated by a Gaussian function. The far-field intensity patterns have “analogous elliptic” form. It is also shown, for the first time, that the separability condition is not strictly valid for the far-field of a laser diode. Only in the vicinity of the optical axis the field can be expressed as a product of two separate functions, each of which depends only on one of the two transverse coordinates parallel and perpendicular to the diode junction.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00332597
Permalink