Publication Date:
2012-03-13
Description:
We characterized the conduction mechanisms in thin sputtered films of three representative binary Me–O (Me=Ta, W, and Nb) systems as a function of oxygen content, by combining in situ chemical state and electronic band structure studies from X-ray photoemission with temperature-dependent transport measurements. Despite certain differences, these amorphous films all displayed Fermi glass behavior following an oxidation-induced transition from metallic to hopping conduction, down to a sub-percolation threshold. The electron localization estimated from the band structure was in good agreement with that from the transport measurements, and the two were used to construct phase diagrams of conduction in the degree of oxidation-conductivity coordinates, which should prove important in the design of resistive switching and other electronic devices. Content Type Journal Article Category Invited paper Pages 1-11 DOI 10.1007/s00339-012-6856-z Authors I. Goldfarb, Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, CA 94304, USA F. Miao, Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, CA 94304, USA J. Joshua Yang, Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, CA 94304, USA W. Yi, Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, CA 94304, USA J. P. Strachan, Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, CA 94304, USA M.-X. Zhang, Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, CA 94304, USA M. D. Pickett, Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, CA 94304, USA G. Medeiros-Ribeiro, Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, CA 94304, USA R. Stanley Williams, Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, CA 94304, USA Journal Applied Physics A: Materials Science & Processing Online ISSN 1432-0630 Print ISSN 0947-8396
Print ISSN:
0947-8396
Electronic ISSN:
1432-0630
Topics:
Technology
,
Physics
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