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  • Springer  (24)
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  • 1
    Electronic Resource
    Electronic Resource
    Transient negative photoconductivity in silicon doped with gold (1987)
    Springer
    Applied physics 43 (1987), S. 205-208 
    Details
    ISSN: 1432-0630
    Keywords: 72.40 ; 72.20 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A transient negative photoconductivity phenomenon observed in silicon doped with gold atoms by an appropriate diffusion condition has been investigated. The transient negative photoconductivity could be observed with a diode doped with gold atoms under intrinsic light-pulse illumination. In the recovery process of the transient negative photoconductivity to a steady-state dark level, two kind of time constants were observed, which may be related with the emission of electrons from gold level. A dependence of the magnitude of the peak value on the ambient temperature was observed; a qualitative explanation is given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615977
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  • 2
    Electronic Resource
    Electronic Resource
    Instability of photoexcited electron-hole plasma in short semiconductor structures (1987)
    Springer
    Applied physics 42 (1987), S. 41-43 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The instability of the electron-hole plasma produced by continuous photoexcitation in short semiconductor structures is investigated theoretically. The applied electric field is considerably disturbed by photogenerated charge carriers. At a sufficiently intensive photogeneration plasma instability occurs. The frequency of current oscillations due to the instability, as shown by numerical simulation for a GaAs structure, is in the range of 1011–1012s−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618157
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  • 3
    Electronic Resource
    Electronic Resource
    The electrical properties of doped silicon, grown by Molecular-Beam-Epitaxy (MBE) (1987)
    Springer
    Applied physics 42 (1987), S. 197-200 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Measurements of the Hall coefficients and of the resistivity of MBE-grown Si, doped with P, As, Sb, B, and Ga in the concentration range 1014 to 1020 cm−3, were carried out at 77 K and at 300 K. With the exception of Ga-doped Si, the measured mobilities were close to or higher than those of bulk materials at both temperatures. The Mott metal/non-metal transition has been observed in the present epitaxial materials and the measured values for the critical impurity concentration at which the transition occurs, agree with values reported by other workers for bulk silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620599
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  • 4
    Electronic Resource
    Electronic Resource
    Photopyroelectric spectroscopy (P2ES) of electronic defect centers in crystalline n-CdS (1987)
    Springer
    Applied physics 44 (1987), S. 123-130 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Photopyroelectric spectroscopy (P2ES) of n-CdS single crystals was performed at an open circuit, and in conjunction with photocurrent spectroscopy (PCS) in the presence of an applied ac or dc transverse field. The results showed that P2ES is very sensitive to the presence of deliberately introduced subbandgap defect structures, with the P2E signal dominated by non-radiative de-excitation mechanisms at defect centers. The potential of this technique as a powerful electronic defect diagnostic tool, combined with the overall experimental simplicity, was demonstrated with mm-thick crystals used as received in an open-cell geometry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00626412
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  • 5
    Electronic Resource
    Electronic Resource
    Conductivity fluctuations in planar resistors (1987)
    Springer
    Applied physics 43 (1987), S. 93-95 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 73.60 ; 41
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Non-uniform planar resistors are modelled by a small stochastic conductivity pattern superimposed on the constant mean conductivity. At first a theoretical analysis is presented giving the mean square deviation of the resistor current for a given applied voltage. The same problem is then simulated by Monte-Carlo experiments and a good agreement is observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617959
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  • 6
    Electronic Resource
    Electronic Resource
    Passivation of high-resistivity cadmium telluride by hydrogen implantation (1987)
    Springer
    Applied physics 43 (1987), S. 47-52 
    Details
    ISSN: 1432-0630
    Keywords: 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Cadmium telluride crystals grown by the Travelling Heater Method (THM) technique have been implanted with hydrogen using protons from 2 keV to 3 MeV. Electrical measurements indicate drastic changes in the concentration of defects, especially in the 0.15–0.20 and 0.45–0.60 eV bands. However, the modification induced by hydrogen depends on the starting material, implantation and annealing conditions. Furthermore, resistivity and carrier lifetime are also strongly affected by this treatment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615205
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  • 7
    Electronic Resource
    Electronic Resource
    Temperature dependence of AC-photoconductivity of HgI2 crystal (1987)
    Springer
    Applied physics 42 (1987), S. 129-131 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 72.80J ; 70.90
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An ac impedance method has been used to study the electrical properties of an illuminated HgI2 crystal as a function of temperature [10–350 K] and frequency [1–104 Hz]. The complex impedance plane plots enabled us to determine the bulk resistance of the crystal as a function of temperature. Activation energies of [0.08±0.005 eV] and [0.25 ±0.01eV] are then found; they are attributed to acceptor and donor trapping levels, respectively. At temperatures lower than 230 K, a weak temperature dependence of the bulk resistance is observed. This weak dependence is supposed to be due to photoconductivity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616722
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  • 8
    Electronic Resource
    Electronic Resource
    MITATT mode in DDR heterostructure Impatt (1987)
    Springer
    Applied physics 42 (1987), S. 303-309 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 79.20 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Large signal characterisation of double heterostructure DDR Impatt diode has been carried out in the millimeter-wave range considering the MITATT mode of operation. The structure of the device is p+-p2-p1-n1-n2-n+ where impact ionisation and tunneling takes place in the p1-n1 region. In this study we have considered two well-known heterostructures, e.g., InP/GaInAs/InP and InP/InGaAsP/InP and one nonconventional structure GaAs/InP/GaAs. The theoretical results of the performances of these devices as regards of output power, efficiency, and negative conductance revealed that the structures are quite promising as the source of power in the millimeter-wave range. The analysis may be used for other mm wave DDR heterostructure Impatts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616568
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  • 9
    Electronic Resource
    Electronic Resource
    The pre-exponential factor of the escape probability in thermally stimulated processes (1987)
    Springer
    Applied physics 43 (1987), S. 29-35 
    Details
    ISSN: 1432-0630
    Keywords: 71 ; 72.20 ; 78
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The pre-exponential factor of the transition probability of a trapped charge carrier into an excited state is evaluated from two different approaches. The semi-classical treatment based on a thermodynamical concept involves the calculation of the vibrational entropy change from the partition sum. The quantum-mechanical treatment deals with non-radiative transitions due to electron-phonon coupling. The factor is found to be explicitely dependent on both the temperature and the lattice vibration frequencies represented by a single Einstein oscillator. In addition, the results from different concepts show similar behaviour. As a consequence the effect of lattice vibrations on the position as well as on the shape of glow peaks in thermally stimulated measurements are investigated on a simple phenomenological base. The analysis of some experimental results can be performed in accordance with the theoretical predictions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615202
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  • 10
    Electronic Resource
    Electronic Resource
    Temperature dependence of dielectric behaviour of illuminated HgI2 (1987)
    Springer
    Applied physics 43 (1987), S. 61-63 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 72.80J ; 70.90
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The real part of the dielectric constant was studied in the temperature range of 340 to 10 K, and at frequencies that range from 1 to 104 Hz. The dipole contribution to the dielectric constant has been found at temperatures lower than 110 K while the space-charge contribution due to the increase of crystal defects is dominant at temperatures higher than 290K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615207
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  • 11
    Electronic Resource
    Electronic Resource
    Toward molecular electronics (1987)
    Springer
    Applied physics 43 (1987), S. 139-141 
    Details
    ISSN: 1432-0630
    Keywords: 85.40 ; 72.20 ; 76
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A polarized N-O bond behaves as an intramolecular p-n junction. Their rectifying properties have been found in 1,3-dimethylisoxasole, 1-phenylsydnone, and 1-(4-methylphenyl)sydnone molecules based on H1-NMR data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617966
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  • 12
    Electronic Resource
    Electronic Resource
    Phase formation and redistribution of Xe implanted in the Ni-Si system after fast melting and solidification (1987)
    Springer
    Applied physics 44 (1987), S. 279-284 
    Details
    ISSN: 1432-0630
    Keywords: 81.40 ; 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The behaviour of Xe implanted at the Ni-Si interface and irradiated with Nd-laser pulses is studied in details and compared with Xe implantation into NiSi2 and into pure Si. Ion beam mixing followed by laser irradiation is able to form good quality epitaxial NiSi2 layer on Si. An inward segregation of Xe is observed with retention of Xe at a depth of 30 nm inside pure silicon. Implantation of Xe into NiSi2 or pure Si causes broadening and loss of Xe, as generally observed for implantation into pure materials. The different behaviour of Xe at the Si/NiSi2 interface must thus be ascribed to peculiar characteristics of the interface itself.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616703
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  • 13
    Electronic Resource
    Electronic Resource
    p, V, T and derived thermodynamic data for bromobenzene at temperatures from 278 to 323 K and pressures up to 280 MPa (1987)
    Springer
    International journal of thermophysics 8 (1987), S. 557-565 
    Details
    ISSN: 1572-9567
    Keywords: bromobenzene ; hard-sphere diameter ; high pressure ; internal pressure ; isobaric expansivity ; isothermal compressibility ; p, V, T data
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Experimentally determined p, V, T data are reported for bromobenzene at 278, 288, 298, 313, and 323 K, at pressures up to about 280 MPa or (at 278 and 288 K) a lower pressure slightly below the freezing pressure at the temperature of measurement. Values of the isobaric expansivity, isothermal compressibility, internal pressure, and equivalent hard-sphere diameter, derived from the p, V, T data, are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00503642
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  • 14
    Electronic Resource
    Electronic Resource
    Temperature and pressure effects on the thermal conductivity of TlCl and TlBr (1987)
    Springer
    International journal of thermophysics 8 (1987), S. 607-620 
    Details
    ISSN: 1572-9567
    Keywords: high pressure ; hot-wire method ; thallium bromide (TlBr) ; thallium chloride (TlCl) ; thermal conductivity
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The hot-wire method was used to measure the thermal conductivity of both TlCl and TlBr. The measurements were performed in the temperature range 120–300 K and at pressures up to 2.3 GPa. An analysis of the thermal conductivity data showed that the Leibfried-Schlömann formula is a better description for TlBr than for TlCl. For both TlBr and TlCl the effect of optic phonons on thermal conductivity cannot be ignored.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00503646
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  • 15
    Electronic Resource
    Electronic Resource
    Solid-liquid phase equilibria of (α-methylnaphthalene + β-methylnaphthalene) and (chlorobenzene + bromobenzene) systems under high Pressures (1987)
    Springer
    International journal of thermophysics 8 (1987), S. 671-680 
    Details
    ISSN: 1572-9567
    Keywords: bromobenzene ; chlorobenzene ; high pressure ; α-methylnaphthalene ; β-methylnaphthalene ; solid-liquid phase equilibrium ; solid solution
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Solid-liquid phase equilibria of the (α-methylnaphthalene + β-methylnaphthalene) and the (chlorobenzene + bromobenzene) systems have been investigated at temperatures from 278 to 343 K and pressures up to 500 MPa using a high-pressure optical vessel. The uncertainties of the measurements of temperature, pressure, and composition were within ±0.1 K, ±0.5 MPa, and ±0.001 mole fraction, respectively. In both systems, the freezing and melting pressures at a constant composition increase almost linearly with increasing temperatures. In the former system, where the two components can form a solid solution with one another to a limit extent, the eutectic point shifts to a higher temperature and to a α-methylnaphthalene-rich composition with increasing pressures. In the latter system, where the two components are completely soluble in each other in the solid phase, the freezing points of all mixtures lie between those of the pure components at each pressure. It is found that the coexistence curves obtained can be expressed by a quadratic equation in pressure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00500787
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  • 16
    Electronic Resource
    Electronic Resource
    Thermal conductivity of steam from 250 to 510°C at pressures up to 95 MPa including the critical region (1987)
    Springer
    International journal of thermophysics 8 (1987), S. 283-292 
    Details
    ISSN: 1572-9567
    Keywords: critical range ; high pressure ; thermal conductivity ; steam
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract New measurements of the thermal conductivity of steam have been performed in the temperature range 250–510°C and in the pressure range from 1 up to 95 MPa. Most of the measurements were taken at temperatures greater than the critical temperature, where the enhancement of the thermal conductivity is observed. The experimental values are compared to the IAPS formulation for the thermal conductivity of water.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00503942
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  • 17
    Electronic Resource
    Electronic Resource
    Thermal conductivity of ethane in the critical region (1987)
    Springer
    International journal of thermophysics 8 (1987), S. 293-304 
    Details
    ISSN: 1572-9567
    Keywords: critical region ; ethane ; high pressure ; thermal conductivity
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A coaxial cylinder method was used to measure the thermal conductivity of ethane in the pressure range from 10 up to 280 bar and in the temperature range from 308 up to 365 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00503943
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  • 18
    Electronic Resource
    Electronic Resource
    Solid-liquid phase equilibria of benzene + cyclohexane system under high pressures (1987)
    Springer
    International journal of thermophysics 8 (1987), S. 415-424 
    Details
    ISSN: 1572-9567
    Keywords: benzene ; cyclohexane ; eutectic point ; high pressure ; solid-liquid phase equilibrium
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Solid-liquid phase equilibria of the benzene + cyclohexane system have been investigated experimentally at temperatures from 278 to 323 K and pressures up to 500 MPa using a newly designed optical vessel. The uncertainties of the measurements of temperature, pressure, and composition are within ±0.1 K, ±0.5 MPa, and ±0.001 mole fraction, respectively. The solid-liquid equilibrium pressure at a constant composition increases almost linearly with increasin temperature. The eutectic point shifts to a higher temperature and to a benzenerich composition with increasing pressure. This trend is found to agree with the direction predicted by the van Laar equation. The solid-liquid coexistence curves can be expressed by the Wilson equation with a mean deviation of 0.007 and a maximum deviation of 0.029 in mole fraction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00567102
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  • 19
    Electronic Resource
    Electronic Resource
    Freezing pressures, p, V, T, and self-diffusion data at 298 and 313 K and pressures up to 300 MPa for 1,3,5-trimethylbenzene (1987)
    Springer
    International journal of thermophysics 8 (1987), S. 71-79 
    Details
    ISSN: 1572-9567
    Keywords: freezing pressure ; high pressure ; isothermal compressibility ; p, V, T data ; self-diffusion ; 1,3,5-trimethylbenzene
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Mesurements are reported for the melting point of 1,3,5-trimethylbenzene at pressures up to 345 MPa. Self-diffusion coefficients and p, V, T data have been obtained at 298 and 313 K for pressures up to 280 MPa. Isothermal compressibilities have been calculated from the p, V, T results. The freezing pressures at 0.1 MPa correspond to previously reported values for modification III of trimethylbenzene. Equivalent hard-sphere diameters estimated from the melting point and p, V, T data are used to apply the rough hard-spheres theory to the self-diffusion data; the calculations indicate that there is random packing of the particles.
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    URL: http://dx.doi.org/10.1007/BF00503225
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  • 20
    Electronic Resource
    Electronic Resource
    Volume ratios for n-pentane in the temperature range 278–338 K and at pressures up to 280 MPa (1987)
    Springer
    International journal of thermophysics 8 (1987), S. 231-238 
    Details
    ISSN: 1572-9567
    Keywords: high pressure ; isothermal compressibility ; n-pentane ; volume ratio
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Volume ratios (V P/V 0.1), and isothermal compressibilities calculated from them, are reported for n-pentane for seven temperatures in the range 278 to 338 K for pressures up to 280 MPa. The isobaric measurements were made with a bellows volumometer for which a novel technique had to be devised to enable measurements to be made above the normal boiling point (309.3 K). The accuracy of the volume ratios is estimated to be ±0.05 to 0.1% up to 303.15 K and ±0.1 to 0.2% from 313.15 to 338.15 K. The volume ratios are in good agreement with those calculated from recent literature data up to the maximum pressure of the latter, viz., 60 MPa.
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    URL: http://dx.doi.org/10.1007/BF00515205
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  • 21
    Electronic Resource
    Electronic Resource
    Hydrogen component fugacities in binary mixtures with carbon dioxide: Pressure dependence (1987)
    Springer
    International journal of thermophysics 8 (1987), S. 205-216 
    Details
    ISSN: 1572-9567
    Keywords: carbon dioxide ; fugacity ; high pressure ; hydrogen ; hydrogen + carbon dioxide binary system ; mixtures
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The fugacity coefficients of hydrogen in binary mixtures with carbon dioxide were measured isothermally using a physical equilibrium technique. This technique involves the use of an experimental chamber which is divided into two regions by a semipermeable membrane. Hydrogen can penetrate and pass through the membrane, while carbon dioxide cannot. During the approach to equilibrium, the pressure of pure hydrogen on one side of the membrane approaches the partial pressure of hydrogen in the mixture on the other side of the membrane. This allows a direct measurement of the hydrogen component fugacity at a given mixture mole fraction. In this study, results are reported for measurements made on the hydrogen + carbon dioxide binary at 130°C (403 K), with total mixture pressure of 3.45, 5.17, 8.62, 10.34, and 13.79 MPa. General trends in the experimental results are discussed, and comparisons are made with predictions from the Redlich-Kwong, Peng-Robinson, and extended corresponding-states models.
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    URL: http://dx.doi.org/10.1007/BF00515203
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  • 22
    Electronic Resource
    Electronic Resource
    Volumetric behavior of pure alcohols and their water mixtures under high pressure (1987)
    Springer
    International journal of thermophysics 8 (1987), S. 47-70 
    Details
    ISSN: 1572-9567
    Keywords: alcohols ; aqueous mixtures ; butanols ; compressibility ; ethanol ; excess volume ; high pressure ; methanol ; propanols ; specific volume ; Tait equation ; water
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The specific volumes of C1-C4 alcohols and binary mixtures of water with methanol, ethanol, 1-propanol, 2-propanol, and 2-methyl-2-propanol are presented as functions of temperature, pressure, and composition. The measurements were carried out using a modified Adams piezometer and a high-pressure burette method in a temperature range from 283.15 to 348.15 K at pressures up to 350 MPa. The uncertainties in the specific volume obtained are estimated to be less than 0.09%. The specific volumes of the pure alcohols and their mixtures with water are found to decrease monotonously with increasing pressure. The numerical P-V relations at each temperature and composition are correlated satisfactorily as a function of pressure by the Tait equation. Definite inflections appear on the isobars of isothermal compressibility or partial molar volume versus composition of alcohol + water mixtures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00503224
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  • 23
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    Densities of n-alkanes and their mixtures at elevated pressures (1987)
    Springer
    International journal of thermophysics 8 (1987), S. 541-555 
    Details
    ISSN: 1572-9567
    Keywords: alkanes ; density ; high pressure ; liquid mixtures ; Tait equation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Accurate density data for n-alkanes over a wide range of temperature and pressure have been used to test existing correlation and prediction methods. It is found that the most successful representation at temperatures up to 0.66 times the critical temperature and pressures up to 150 MPa is given by the Tait equation in the form (ρ−ρ0)/ρ=C log [(B + P)/(B + P 0)], where subscript 0 refers to 0.101 MPa, with C equal to 0.2000, and [B+(C n −6)], where C n is the number of carbon atoms in the alkane chain, is a smooth function of reduced temperature. A simple extension of this method to mixtures gives an excellent prediction of densities at pressures up to 150 MPa over the same reduced temperature range.
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    URL: http://dx.doi.org/10.1007/BF00503641
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  • 24
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    Thermal conductivity of propane in the temperature range 25–305°C and pressure range 1–70 MPa (1987)
    Springer
    International journal of thermophysics 8 (1987), S. 27-38 
    Details
    ISSN: 1572-9567
    Keywords: critical region ; high pressure ; propane ; thermal conductivity
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A coaxial cylinder method was used to measure the thermal conductivity of propane in the pressure range from 1 to about 70 MPa and in the temperature range from room temperature to 305°C. The behavior of the thermal conductivity in the critical region was carefully investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00503222
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