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  • Articles  (5)
  • 72.20  (5)
  • 2005-2009
  • 1980-1984  (5)
  • 1965-1969
  • 1925-1929
  • 1984  (5)
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (5)
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  • Articles  (5)
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  • 2005-2009
  • 1980-1984  (5)
  • 1965-1969
  • 1925-1929
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (5)
  • Physics  (5)
  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 33 (1984), S. 107-111 
    ISSN: 1432-0630
    Keywords: 72.20 ; 79.20 ; 81
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The transmitted energy density in thin single Si crystal, wafers is measured atλ=1.06 μm as a function of the incident energy density for a Nd laser pulse of 30 ns duration. Non-linear effects begin to become important at about 0.3 J/cm2. The contribution due to free-carriers is separated from the interband one by using measurements made at low energy density and at different sample temperatures in the 20°–150 °C range. The time dependence of the free-carrier concentration and of the lattice temperature is computed for different values of the Auger constant. The experimental data in the 0.2–2.5 J/cm2 energy density range are fitted with an Auger constant of 10−30 cm6s−1.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 35 (1984), S. 9-12 
    ISSN: 1432-0630
    Keywords: 72.20 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The kinetics of the Staebler-Wronski effect ina-Si:H were investigated experimentally. The rate of recovery from the illuminated state B to the annealed state A was observed at various temperatures in undoped,n- andp-dopeda-Si:H. The data can be characterized by a thermally activated relaxation time with an activation energy decreasing with increasing doping concentration. The results are compared with previous data and existing models.
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 33 (1984), S. 1-7 
    ISSN: 1432-0630
    Keywords: 72.20 ; 42.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Harmonic mixing of two alternating electric fields due to a Brownian charged particle in a nonlinear one-dimensional potential of cosine shape is investigated. The dynamics of the system are described by a time dependent Fokker-Planck equation. The appropriate distribution function is obtained by a matrix continued fraction expansion method, which is treated numerically. The dc signal due to mixing is computed for strong thermal fluctuations in all relevant parameter ranges of the pinning potential strength, damping and frequency. The dc signal without fluctuations is discussed separately. Resonance effects are shown in the electric dc field and the additional phase shift, caused by intrinsic relaxation processes.
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 33 (1984), S. 29-35 
    ISSN: 1432-0630
    Keywords: 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Crystalline samples of Si, GaAs, GaP, InP, and CdTe have been rendered amorphous by bombardment with rare gas ions. DC conductivity and thermopower have been measured as a function of temperature in the interval between 15–500 K. In all cases, electron transport at low temperatures is characterized by non-simply activated processes of the hopping type transport, whereas band transport is observed at higher temperatures. The common and individual features of the different amorphous systems are discussed within the framework of existing transport theories.
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 35 (1984), S. 145-148 
    ISSN: 1432-0630
    Keywords: 85.30 ; 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A current oscillation phenomenon in SOGICON type Si device fabricated by the use of a planar process is studied. The oscillation is generated in the region between anode and notch which is located at the center on the sample. A considerably high electric field is observed in the notch region. Considering the hot-electron effect due to the high electric field, the mechanism underlying the current oscillation is discussed.
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