ISSN:
1432-0630
Keywords:
71.55F
;
61.70
;
73.40Q
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract The annealing behavior of trap-centers was studied in float-zone silicon wafers containing A-swirl defects. Samples from areas of high and low A-swirl density were annealed in nitrogen ambient between 100° and 900 °C, and analysed using the Deep Level Transient Spectroscopy. The results indicate, that two levels atE c }-0.07 eV,σ n=4.6×10−16 cm2, andE c−0.49eV,σ n=6.6×10−16cm2 are caused by one defect, for which the silicon di-selfinterstitial is a likely interpretation. A level atE c }-0.11 eV was assigned to interstitial carbon. Both defects annealed out at about 170 °C. After 600 °C annealing an additional level atE c−0.2 eV was detected, which was attributed to an interstitial silicon carbon complex. Heat treatment at 800 °C generated a new level atE c−0.49 eV,σ n=2.9×10−16cm2 only in the area of high A-swirl defect density. This level was also observed after oxidation and subsequent annealing of silicon.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00632436
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