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  • Articles  (7)
  • 79.20  (7)
  • 1975-1979  (7)
  • 1978  (7)
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (7)
  • Geosciences
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  • Articles  (7)
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  • 1975-1979  (7)
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (7)
  • Geosciences
  • Physics  (7)
  • 1
    Electronic Resource
    Electronic Resource
    SIMS and flash desorption studies of nickel oxygen interaction (1978)
    Springer
    Applied physics 16 (1978), S. 367-373 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract O2 exposure of polycrystalline nickel at 300 K results in characteristics changes of secondary ion emission. These can be described by a model which is in good agreement with corresponding LEED, AES, XPS, and ΔΦ results of other authors. According to this model, oxygen can be bonded on Ni in at least five different phases: 1) chemisorption, indicated by a rapid increase of Ni+, Ni 2 + , and Ni2O+ (≦5 L); 2) a rearranged chemisorption layer, characterized by a drastic decrease of Ni+, Ni 2 + , and Ni2O+ (5–15 L); 3) nickel oxide (NiO) responsible for a strong NiO−- and NiO 2 − -emission (≦40 L); 4) oxygen on top of this NiO layer, producing a final increase of Ni+ and NiO+ and a O2-flash signal at 400 K (〉40 L); 5) bulk dissolved oxygen in thermal equilibrium with a chemisorption layer (after several exposure/heating cycles). During ion bombardment of a 100 L O2 exposed Ni surface these different binding states occur in a reversed order of succession. O2-flash signals at 400 and 1100 K, related to drastic changes in secondary ion emission at 400, 700, and 1100 K, reflect the disappearance of various oxygen binding states. The exchange between different oxygen phases was studied by16O2/18O2 isotope experiments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00885861
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  • 2
    Electronic Resource
    Electronic Resource
    Structure of crystallized layers by laser annealing of 〈100〉 and 〈111〉 self-implanted silicon samples (1978)
    Springer
    Applied physics 15 (1978), S. 365-369 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Channeling effect techniques with a 2.0 MeV He+ Rutherford backscattering and transmission electron microscopy were used to characterize the crystallized layers after Q-switched ruby laser irradiation of 4000 Å thick amorphous layer on 〈100〉 and 〈111〉 underlined crystal substrates. At a laser energy density of 2.5 J/cm2 the crystal layer on the 〈111〉 specimen contains a large density of stacking-faults, that on 〈100〉 specimen contains a very small amount of screw dislocation lines. High quality single-crystal layers have been obtained after irradiation at 3.5 J/cm2. From a comparison with the growth rate and defect structure observed in thermally annealed implanted-amorphous layers, we propose that crystal growth by 50 ns pulse laser annealing occurs by melting the amorphous layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00886154
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  • 3
    Electronic Resource
    Electronic Resource
    Energy spectra of light ions backscattered from random solids (1978)
    Springer
    Applied physics 16 (1978), S. 247-253 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A scheme for the calculation of energy spectra of ions backscatterred from random solids is proposed for the energy region where multiple collisions dominate. Calculations are performed for light ion bombardment of heavy targets, which is a case of special interest for the plasma-well interaction in fusion reactors. Examples of spectra obtained for protons incident on a Cu target are presented. A maximum in the spectra is found in accordance with measurements. The position of the maximum seems to vary slowly with the initial ion energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00885120
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  • 4
    Electronic Resource
    Electronic Resource
    Mechanisms for the reflection of light atoms from crystal surfaces at kilovolt energies (1978)
    Springer
    Applied physics 17 (1978), S. 295-301 
    Details
    ISSN: 1432-0630
    Keywords: 68.20 ; 79.20 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The computer program MARLOWE was used to investigate the backscattering of protons from the (110) surface of a nickel crystal. Grazing incidence was considered so that anisotropic effects originated mainly from the surface region. The contribution of aligned scattering was studied by comparing the results with similar calculations for an amorphous target. Energy distributions of backscattered particles were investigated for incident energies ranging from 0.1 to 5keV. The structure of these distributions was explained by making calculations for several target thickness. Specular reflection was found to depend on the structure of the first few atomic planes only. The (110) rows in the surface plane were responsible for focusing into surface semichannels. Focusing in these semichannels was found to be the strongest under total reflection conditions (below about 1.3 KeV) while the scattering intensity from surface rows increased with increasing incident energy. The orientation of the plane of incidence was found to have large influence on the relative contributions of the reflection mechanisms involved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00886958
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  • 5
    Electronic Resource
    Electronic Resource
    AES investigations of Ar+ ion retention in Si during Ar sputtering (1978)
    Springer
    Applied physics 16 (1978), S. 43-46 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 ; 68.20 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Argon retention in silicon has been studied by AES in the energy range between 1 and 15 keV at bombardment fluences up to ∼1018 ions/cm2. AES data of implanted argon in silicon near the surface region, as obtained during sputtering, can be interpreted qualitatively by a simple model of ion collection. Discrepancies between calculated and measured saturation values of collected argon ions indicate that during implantation at high fluences addition surface effects become important and that the simple model of ion collection has to account for this. Quantitative AES correlated with RBS indicates pronounced concentration gradients of argon in silicon near surface regions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00931420
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  • 6
    Electronic Resource
    Electronic Resource
    On the influence of reactive gases on sputtering and secondary ion emission (1978)
    Springer
    Applied physics 16 (1978), S. 271-278 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract As a continuation of earlier sputtering yield measurements in an ion microprobe, the influence of oxygen and nitrogen on sputtering yield, ionisation efficiency and depth resolutions has been studied. For inert gas bombardment the yield of Ti and V falls sharply at a certain oxygen exposure. While this decrease in yield can be correlated with an increase in surface binding energy in the case of titanium, cone formation causes the yield to drop for oxygen exposed vanadium. In contrast, during nitrogen bombardment the only effect of oxygen exposure is a drastic increase of the ionisation efficiency; the sputtering yield or the depth resolution Δz/z is hardly influenced by oxygen coverage. As was observed earlier in the case of Cu−Ni layers, Δz is essentially constant for erosion depthsz≳800 Å, thus yielding better resolution at large depths than is to beexpected from a sequential layer removal model. The extent of the transition zone Δz, is determined by surface topography and thus depends on the target composition as well as its structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00885122
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  • 7
    Electronic Resource
    Electronic Resource
    Distinction between avalanche and tunneling breakdown in one-sided abrupt junctions (1978)
    Springer
    Applied physics 16 (1978), S. 191-194 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The distinction between avalanche and tunneling breakdown in one-sided abrupt junctions is made on the basis of a new, simple expression for the tunneling breakdown field strengthF t. It is shown thatF t [V/cm] depends upon the temperatureT [K], the reduced tunneling effective massm eff + /m o and the semiconductor energy band gapE g [eV] according to the following equation $$F_t = 1.76 \cdot 10^6 \cdot \left( {\frac{T}{{300}}} \right) \cdot \left( {\frac{{m_{eff}^ + }}{{m_0 }} \cdot E_g } \right)^{{1 \mathord{\left/ {\vphantom {1 2}} \right. \kern-\nulldelimiterspace} 2}} [V/cm].$$ Using published calculations for the avalanche breakdown voltage, the result is applied to the semiconductors Ge, Si, GaAs and GaP at 300 K and InSb at 77K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00930386
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