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  • Articles  (15)
  • 78.65  (15)
  • Springer  (15)
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  • 1995-1999  (11)
  • 1990-1994  (4)
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  • 1950-1954
  • 1995  (11)
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (15)
  • Architecture, Civil Engineering, Surveying
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  • Articles  (15)
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  • Springer  (15)
  • Elsevier
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  • 1995-1999  (11)
  • 1990-1994  (4)
  • 1955-1959
  • 1950-1954
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (15)
  • Architecture, Civil Engineering, Surveying
  • Physics  (17)
  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 50 (1990), S. 177-181 
    ISSN: 1432-0630
    Keywords: 68.55 ; 73.40 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The optical transmission of CoSi2 films of thickness 2.6–15 nm is measured in the wavelength range 1–20 μm. The optical constants are evaluated by taking into account multiple reflections in the film and by fitting a Drude model. The plasma frequency ωp=5.4−7.6 eV is equivalent to a carrier density n eff=3×1022 cm−3 and one carrier per unit cell. The relaxation frequency of the plasma resonance assumes high values Γ=2 eV near the interface to silicon and decreases into the bulk film over several nanometers. Films grown off-axis from the (111) Si orientation exhibit an enhanced relaxation frequency.
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  • 2
    ISSN: 1432-0630
    Keywords: 72.20 ; 72.80 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Fine-grained (d≈0.1 μm), polycrytalline SiC films were prepared on top of insulating and optically transparent sapphire substrates by means of a thermal crystallization technique. Optical absorption measurements indicate that the individual SiC grains consist of relatively defect-free β-SiC surrounded by high-defect density grain-boundary material. Nominally undoped material exhibits a low de conductivity (δ≈10−8 Ω−1 cm−1) in the dark and an efficient photoconductivity apon illumination with short-wavelength UV light. The temperature dependence of the de transport exhibits a quasi-Arrhenius-type behaviour with average activation energies of the order to 0.6 eV. A characteristic feature of this kind of transport is a continuous increase in activation energy with increasing film temperature. Upon doping with N, P and Al ions, the average activation energy is decreased and room temperature conductivities of the order of 0.1 Ω−1 cm−1 are reached. Doping with B ions, on the other hand, only leads to high-resistivity material. It is shown that the electronic transport in doped SiC-On-Sapphire (SiCOS) films can be successfully modelled in terms of a grain-boundary-dominated conduction process. In this process thermal activation across potential barriers at the grain-boundary surfaces competes with funneling through these same barriers.
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 61 (1995), S. 221-225 
    ISSN: 1432-0630
    Keywords: 78.65 ; 07.75 ; 81.60 ; 82.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In Resonant Laser Ablation (RLA), material is related and selectively ionized by a low-energy pulse from a tunable laser. The selectivity and efficiency allow detection and quantitation at very low concentrations. We demonstrate that RLA has potential use in profiling thin layer and multilayer structures. Quantitative results are reported on the analysis of 20 and 100 Å copper thin films on Si(110) surfaces. Removal rates range from 10−3 to 10−2 Å/shot. Prospects for interrogation of dopants and impurities are also evaluated.
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 50 (1990), S. 531-540 
    ISSN: 1432-0630
    Keywords: 61.70 ; 78.55 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Two attractive methods for materials characterization are applied and discussed: (a) light scattering topography for fast and nondestructive testing of structural perfection, and (b) photoluminescence topography for evaluating the light emission characteristics of photoluminescent materials. Among the examples presented are semiconductor substrates and films of silicon, silicon-on-insulators of different kind, and III–V materials.
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 51 (1990), S. 446-450 
    ISSN: 1432-0630
    Keywords: 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The optical properties of MnAl films of different compositions, deposited at different substrate temperatures and in the thickness range 25 to 90 nm, are reported. The reflectance and transmittance are measured in the wavelength range 320–900 nm for near normal incidence of light. These measurements are used to calculate the optical constants namely, refractive index (n) and extinction coefficient (k). The wavelength and thickness dependence of these optical constants are reported. The optical measurements for films with higher Mn content and grown at higher substrate temperature reveal that n and k values are constant over a wide wavelength range (500–900 nm) showing high reflectance in the visible and near infrared region.
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  • 6
    ISSN: 1432-0630
    Keywords: 07.60 ; 68.55 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The recrystallization kinetics of BF 2 + ion-implanted silicon has been studied by means of spectroscopic ellipsometry. It has been found that the dielectric constant of the implanted layers depends on the energy, dose and ion-beam current. The activation energy of the regrowth process increases with ion peak concentration becoming saturated for the largest implanted doses. In the largest-dose samples implanted at low current a significant decrease of the regrowth rate was detected when the recrystallization front crosses the peak of the impurity distribution.
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 61 (1995), S. 339-345 
    ISSN: 1432-0630
    Keywords: 42.10 ; 81.60 ; 78.65 ; 85.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The processes of the ArF-excimer-laser ablation of PolyMethylMethAcrylate (PMMA) has been investigated. We studied the surface reflection of the polymer sample during UV photoablation. It was observed that a dark spot appeared in the reflected probe nitrogen laser beam (the reflection decreased below 4%) with about 5 ns delay after the onset of the ablating excimer pulse, while the transmitted probe laser intensity was increased to about 104%. A fast stroboscopic photographic arrangement was built for investigation of the ejection. A protuberance developed on the irradiated surface at about 100 ns delay. This expanded with about 600 m/s average velocity until 4 μs, then contracted slowly, and finally at 16–18 μs delay the ejection started. We also examined the process of the UV photoablation of PMMA in the vacuum chamber. In this case, the protuberance also appeared, but it left the surface nearly in one block at 3 μs delay. Using a double-flash exposure photographic arrangement based on a dye laser, the propagation velocity of the shock waves developed in the air above the surface of the PMMA sample as a function of time was measured, and good agreement with shock wave theory was found. The pressure in the shock front can be as high as 1939 bar.
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  • 8
    ISSN: 1432-0630
    Keywords: 78.20 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electrical and geometric properties of GaAs multilayer structures are measured nondestructively by infrared reflectance spectroscopy (50–5000 cm−1). Using oblique incidence and both s- and p-polarizations of the probing beam, carrier concentration and thickness of the epitactic films as well as the carrier concentration of the GaAs substrate are determined. The main structures in the spectra are due to phonon reststrahlen bands, Fabry-Perot interferences and the zeros of the dielectric function leading to dips in the reflectance (Berreman Mode). The results compare favorably with a depth-resolved secondary ion mass spectrometric (SIMS) sample analysis. The range of applicability of the method is discussed.
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 60 (1995), S. 243-245 
    ISSN: 1432-0630
    Keywords: 78.65 ; 73.40. L4
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We report the first observation of well-resolved exciton peaks in the room-temperature absorption spectrum of the strained In0.20Ga0.80As/GaAs Single Quantum-Well (SQW) structure. The best fit of the exciton resonances gives the conduction-band offset ratioQ c=0.70±0.05. The strength of the exciton-phonon coupling is determined from linewidth analysis and is found to be much larger than that of strained InGaAs/GaAs MQW structures.
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 60 (1995), S. 581-587 
    ISSN: 1432-0630
    Keywords: 82.40 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Conversion of solar energy into chemical fuels has been a field of intense research for many years. It is usually attempted as a thermochemical reaction under highly concentrated solar irradiation, e.g. in a solar furnace. Special interest has been addressed to the question of whether concentrated light drives the reaction differently than heat. One effect of irradiation might be a decrease of the reaction temperature. To observe such an influence it is important to monitor the chemical process and the surface temperature of the sample under irradiation. In this paper we propose a method to measure the temperature, the irradiation and the reflectivity/emissivity distribution on an irradiated sample surface simultaneously. We first outline the computational background of the method and discuss its accuracy. We then report on laboratory measurements as well as on experiments performed in a solar furnace.
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  • 11
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 61 (1995), S. 45-50 
    ISSN: 1432-0630
    Keywords: 78.65 ; 81.60.Cp ; 82.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Conventional fabrication method of porous silicon is anodisation of single crystal silicon in hydrofluoric acid. In this report, we show that it is possible to fabricate porous silicon by laser-induced etching. An earlier report by us has demonstrated the dependence of porous silicon photoluminescence characteristic on the etching laser wavelength [1]. Here we used 780 nm line from a diode laser as the etching source, and the optimum etching conditions were obtained. A simple model was proposed to explain the etching process. Scanning Electron Microscope (SEM) images of the samples support the proposed process.
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  • 12
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 61 (1995), S. 141-147 
    ISSN: 1432-0630
    Keywords: 65.00 ; 68.55 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The modification of the thermal conductivity and melting temperature of unrelaxed amorphous Ge films on Si substrates upon laser-induced relaxation and crystallization is presented. Real-Time Reflectivity (RTR) measurements are used to determine experimentally both the melting threshold and the melt durations, and the finite element method is used to simulate the laser-induced heat-flow process. A thermal conductivity ofk=0.010 W dem K is determined for the unrelaxed material by fitting the experimental melting thresholds of unrelaxed films of different thicknesses. A similar procedure applied to the amorphous relaxed and crystallized materials lead to a shift to higher values of both the thermal conductivity and the melting temperature. In order to achieve a good fit of the experimental melt durations, it was necessary to assume a large degree of undercooling prior to solidification. The role of undercooling in the solidification process is finally discussed in terms of its dependence on the faser energy density and the high thermal conductivity of the substrate.
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  • 13
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 61 (1995), S. 163-170 
    ISSN: 1432-0630
    Keywords: 78.40 ; 78.30 ; 73.60 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Optical properties in the spectral range from 0.06 to 5.5 eV of fullerite films on different substrates, C60 powder, and dissolved fullerene material are investigated by spectroscopic ellipsometry and optical transmission and reflection measurements. Depolarization effects are taken into account during determination of the dielectric function of fullerite films by ellipsometry. The optical gap for C60 films is found to be 1.63 eV. Three optical absorption bands are observed at 2.69, 3.53, and 4.49 eV. The dielectric function in the infrared shows the four characteristic infrared vibrational modes. The interference pattern seen in UV/VIS reflection measurements are used for high-precision thickness determination of the films. The Clausius-Mossotti formula is successfully applied to reproduce the experimental optical data measured in C60/dichlormethane solutions. Deviations between theory and experiments provide interesting information about the intermolecular interaction of the C60 molecules. A tentative interpretation of the measured absorption bands is presented.
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  • 14
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 61 (1995), S. 23-27 
    ISSN: 1432-0630
    Keywords: 42.40 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract As an example for a photochromic system we study an active fulgide in a polymer matrix. For theoretical description a two-state model is suggested. Absorption spectroscopy,m-line spectroscopy and UV real-time holography are tools to characterize the optical properties of the guest/host system. The photoinduced refractive-index change is about 7.5×10−4 per % dye concentration. The diffraction efficiency of the holographic grating induced by UV-illumination reaches a high value for photochromic materials of about 7%. The obtained gratings are nonlinear in the case of higher exposure energies.
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  • 15
    ISSN: 1432-0630
    Keywords: 42.80 ; 72.15 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A Photon Scanning Tunneling Microscope (PSTM) with probe-sample distance control by electron tunneling is used to probe the localized surface-plasmon fields of individual nanometric silver particles. As samples, conventional island films produced by thermal evaporation and regular particle arrays produced by an electron-beam-lithography-based technique, respectively, are used. In either case the strength and spatial localization of the surface-plasmon fields strongly depend on the excitation wavelength. The results are interpreted as different resonance frequencies of individual particles or of different sample areas. On regular arrays consisting of particles with a smallest diameter of 40 nm, the PSTM maps represent the plasmon field strength spatially resolved for individual particles.
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