Publikationsdatum:
2018-12-21
Beschreibung:
Author(s): Wei Wang, Guangwei Xu, M. Delwar H. Chowdhury, Hong Wang, Jae Kwang Um, Zhuoyu Ji, Nan Gao, Zhiwei Zong, Chong Bi, Congyan Lu, Nianduan Lu, Writam Banerjee, Jiafeng Feng, Ling Li, Andrey Kadashchuk, Jin Jang, and Ming Liu While it is known that the charge-carrier mobility in amorphous metal oxide semiconductor thin film transistors (TFT) deviates from Arrhenius temperature dependence, we found that the Hall mobility measured in amorphous In-Ga-Zn-O (a-IGZO) follows an Arrhenius relation surprisingly well. We explain ... [Phys. Rev. B 98, 245308] Published Thu Dec 20, 2018
Schlagwort(e):
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Digitale ISSN:
1095-3795
Thema:
Physik
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