ALBERT

Description: In today's environment of "Better, Faster, Cheaper", the ability to produce reliable, flight-proven mechanisms for mission critical applications is more important than ever. Such a mechanism was produced for the QuikScat satellite. The Scatterometer Antenna Subsystem (SAS) is a spin mechanism that continuously rotates a scatterometer antenna, and includes the necessary features (rotary interfaces, drives, launch locks, etc) to allow collection of the scatterometry data that will insure mission success. This paper will discuss the evolution of the SAS from its design heritage on the GGS Polar mission to qualification on the ADEOS II satellite to being a key enabler for the rapid development of the QuikScat Satellite.

Description: In 1998, a new failure mode for space solar arrays was discovered. A flowchart for this failure mode is presented. Since the discovery of this arc failure mode, many tactics have been used to defeat it. The arc thresholds and arc mitigation strategies must be determined in vacuum-plasma tank testing on Earth. Results from these tests must then be extrapolated to the space plasma environment. Thus, the test conditions on Earth must be adequate to reproduce the important aspects of the phenomenon in space. At Glenn Research Center, we have been testing solar arrays for their arc thresholds and sustained arcing thresholds. In this paper, we detail the test conditions for a specific set of tests-those aimed at qualifying the Boeing Solar Tile solar arrays to operate in space at very high voltages (300 V or more).

Description: Sensors are a mission critical element in many NASA programs and require some very unique properties such as small size, low power, high reliability, low weight. Low cost sensors offer the possibility of technology transfer to the public domain for commercial applications. One sensor application that is important to many NASA programs is the ability to point at a radiation source, such as the sun. Such sensors may be an integral part of the guidance and control systems in space platforms and in remote exploratory vehicles. Sun/solar pointing is also important for ground-based systems such as solar arrays. These systems are not required to be small and lightweight. However, if a sensor with a sun pointing capability was developed that is very small, rugged, lightweight and at the same time low cost, it certainly could be used in existing and perhaps many new ground based applications, The objective of the VCELL (Directionally Sensitive Silicon Radiation Sensor) research is to develop a new and very unique silicon based directionally sensitive radiation sensor which can be fabricated using conventional monolithic IC technologies and which will meet the above requirements. The proposed sensor is a novel silicon chip that is directionally sensitive to incident radiation, providing azimuth and elevation information on the incident radiation. The resulting sensor chip will be appropriate for integration into a silicon IC or useful in a hybrid structure to be interfaced with a standard IEEE 1451 bus interface IC to create an Intelligent Sensor. It is presently estimated that it will require about three man-years of effort to complete the VCELL research and development. This includes the optical, electrical, mechanical and silicon fabrication and testing as well as computer simulations and theoretical analysis and modeling including testing in simulated space environments, This report summarizes the sensor research completed this summer as part of the Summer Faculty Fellowship Program. The primary effort was focused on activity necessary to fabricate prototype sensor. Fabrication activities included the design and development of a sensor fabrication process, the development of deposition and diffusion processes using the Thermco furnaces and solid sources, the development of preferential silicon etching processes, ordering necessary process supplies and chemicals, fabrication and tooling of necessary hardware items to support the required silicon process equipment in place in bldg. 4487 and bldg. 7804.

Description: The radiation effects that affect various systems that comprise floating gate memories are presented. The wear-out degradation results of unirradiated flash memories are compared to irradiated flash memories. The procedure analyzes the failure to write and erase caused by wear-out and degradation of internal charge pump circuits. A method is described for characterizing the radiation effects of the floating gate itself. The rate dependence, stopping power dependence, SEU susceptibility and applications of floating gate in radiation environment are presented. The ramifications for dosimetry and cell failure are discussed as well as for the long term use aspects of non-volatile memories.

Description: This summer I have been working with the Non-destructive evaluation (NDE) group and NASA Glenn Research Center. As this is my second summer with the group, I was able to begin working as soon as I arrived. My first task was to develop a system to acquire an impedance analyzer. The basic setup of the system is as follows: a piezo- electric patch is attached to a sample, and a lead is attached to that patch. Another lead is attached directly to the sample, and the leads are connected to the impedance analyzer. The system then puts a voltage through the material over a range of frequencies, and the corresponding impedances are measured for each frequency. After data is collected, it can be compared to another data set, and through a series of calculations a damage parameter is produced. For the time being, we are using a correlation calculation to find the damage parameter. The hope for this project is that a baseline measurement can be taken, and then sometime later another measurement could be taken, and the damage parameter would determine how much damage had been done to the sample. To test this hypothesis, we took baseline data from a sample, and then sent it out to have a notch cut into it. When it was returned, we again took measurements on the sample, and the damage parameter was significantly lower. Another project that I have been working on pertains to the group's newly acquired acoustography system. This system creates a full field ultrasonic signal on one side of a sample, and an acousto-optic sensor is placed on the other side of the sample.

Description: This summer I am continuing my project from the previous two summers. My work involves ohmic contacts to N-type silicon carbide (Sic) devices. My mentor, Dr. Robert Okojie, is developing the technology behind high performance sensors and actuators for harsh environments. Sic is useful because it is able to operate at temperatures up to 600 C and it is resistant to radiation damage. This allows sensors and electronics to be placed in new locations, such as inside a jet engine or in space application without using heavy shielding. Ultimately this results in more efficient, smarter engine technology, reduced launch weights for spacecraft, and high power and high temperature electronics. A fundamental part of Sic devices is the ohmic contact. The contact is the interface between the semiconductor (Sic) and external circuitry. The current flowing in and out the devices is through the contact. Ensuring that these contacts remain ohmic (linear I-V behavior) allows us to fabricate devices that do not waste power at the metallurgical junction. Another key part is maintaining a low contact resistance. It is desired to maintain minimum energy loss by avoiding a rectifying electrical characteristic. My project is to develop and implement a testing procedure for measuring the contact resistance while the device is operating at high temperature. It is important to measure the contacts while simulating the true operating environment as closely as possible. For this reason, measurements are taken while the device is heated at intervals up to 600 C in air. To test the long tern reliability of the devices, the high temperature measurements are repeated after heating the sample for long intervals in air. A new set of data is gathered after heating for a total of 100, 200 and then 400 hours. The current as a function of voltage and the contact resistance was measured using the four point probe technique. The four point probe method is chosen because it measures contact resistance while eliminating error due to wire resistance and calibration issues.

Description: We present results on wavelength division multiplexing of radio-frequency single electron transistors. We use a network of resonant impedance matching circuits to direct applied rf carrier waves to different transistors depending on carrier frequency. A two-channel demonstration of this concept using discrete components successfully reconstructed input signals with small levels of cross coupling. A lithographic version of the rf circuits had measured parameters in agreement with electromagnetic modeling, with reduced cross capacitance and inductance, and should allow 20 to 50 channels to be multiplexed.

Description: intent of this presentation is to depict a mechanism for creating damaging electrical shunts on laser diodes: Failure Mechanism. Metal whisker formation from die attach solder.

Description: Wireless sensors for high temperature industrial applications and jet engines require RF transmission lines and RF integrated circuits (RFICs) on wide bandgap semiconductors such as SiC. In this paper, the complex propagation constant of coplanar waveguide fabricated on semiinsulating 4H-SiC has been measured through 813 K. It is shown that the attenuation increases 3.4 dB/cm at 50 GHz as the SiC temperature is increased from 300 K to 813 K. Above 500 K, the major contribution to loss is the decrease in SiC resistivity. The effective permittivity of the same line increases by approximately 5 percent at microwave frequencies and 20 percent at 1 GHz.

Description: Millimeter and submillimeter heterodyne receivers using state-of-the-art SIS detectors are capable of extremely large instantaneous bandwidths with noise temperatures within a few Kelvin of the quantum limit. We present the design for a broadband, sensitive, heterodyne spectrometer under development for the Caltech Submillimeter Observatory (CSO). The 180-300 GHz double-sideband design uses a single SIS device excited by a full bandwidth, fixed-tuned waveguide probe on a silicon substrate. The IF output frequency (limited by the MMIC low noise IF preamplifier) is 6-18 GHz, providing an instantaneous RF bandwidth of 24 GHz (double-sideband). The SIS mixer conversion loss should be no more than 1-2 dB with mixer noise temperatures across the band within 10 K of the quantum limit. The single-sideband receiver noise temperature goal is 70 K. The wide instantaneous bandwidth and low noise will result in an instrument capable of a variety of important astrophysical observations beyond the capabilities of current instruments. Lab testing of the receiver will begin in the summer of 2002, and the first use on the CSO should occur in the spring of 2003.