Publication Date:
2020
Description:
〈p〉Publication date: March 2020〈/p〉
〈p〉〈b〉Source:〈/b〉 Solid-State Electronics, Volume 165〈/p〉
〈p〉Author(s): Se Hyeong Lee, Sanghyun Lee, Kyoungwan Woo, Yoo-Jong Kim, So-Young Bak, Ye-Ji Han, Sangwoo Kim, Tae-Hee Han, Moonsuk Yi〈/p〉
〈div xml:lang="en"〉
〈h5〉Abstract〈/h5〉
〈div〉〈p〉In solution-processed zinc tin oxide (ZTO) dual-active-layer (DAL) thin-film transistors (TFTs), a thermal limitation exists whereby the ZTO channel layer requires a high annealing temperature—above 470 °C—to achieve stable performance. This disadvantage has been overcome by applying ZnO/SnO〈sub〉2〈/sub〉 channel structures and additional annealing methods. However, these methods are expensive due to equipment requirements. Therefore, we aimed at lowering the annealing temperature of solution-processed ZnO/SnO〈sub〉2〈/sub〉 TFTs by varying the molar ratio and annealing conditions of the channel layers. The optimized TFTs were fabricated at an annealing temperature of 350 °C without employing additional annealing methods. The fabricated TFTs showed superior and more stable performance as compared to ZTO TFTs annealed at 350 °C. The electrical characteristics of the fabricated ZnO/SnO〈sub〉2〈/sub〉 TFTs included a saturation mobility (µ〈sub〉sat〈/sub〉) of 3.04 cm〈sup〉2〈/sup〉/V·s, an on-off-current ratio (I〈sub〉ON/OFF〈/sub〉) of 1.41 × 10〈sup〉6〈/sup〉, a threshold voltage (V〈sub〉th〈/sub〉) of 3.04 V, and a subthreshold swing (SS) of 1.49 V/dec. Based on X-ray photoelectron spectroscopy results, compared with the ZTO DAL channel layer, the ZnO/SnO〈sub〉2〈/sub〉 channel layer showed an increased ratio of metal-oxygen bonds and a decreased ratio of metal-hydroxyl bonds in O 1s deconvolution peaks.〈/p〉〈/div〉
〈/div〉
Print ISSN:
0038-1101
Electronic ISSN:
1879-2405
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
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