ALBERT

Description: In order to maintain the high standards of the NASA conformal coating and staking program, this publication: prescribes NASA's requirements for assuring reliable conformal coating and staking for printed wiring boards and electronic assemblies; describes and incorporates basic considerations necessary to assure reliable conformal coating and staking; establishes the supplier's responsibility to train and certify personnel; provides for supplier documentation of the fabrication and inspection procedures to be used for NASA work, including supplier innovations and changes in technology; and provides visual workmanship standards to aid those responsible for determining quality conformance to the established requirements.

Description: Electrostatic discharge properties of materials are quantitatively measured and ranked. Samples (20) are rotated on a turntable (15) beneath selectable, co-available electrostatic chargers (30/40), one being a corona charging element (30) and the other a sample-engaging triboelectric charging element (40). They then pass under a voltage meter (25) to measure the amount of residual charge on the samples (20). After charging is discontinued, measurements are continued to record the charge decay history over time.

Description: The topics include: 1) A "Model" of Interactive Engineering; 2) Feature Section: Communications Technology; 3) lnReview; 4) Application Briefs; 5) Submillimeter-Wave Image Sensor; 6) Ultrasonic/Sonic Drill/Corers With Integrated Sensors; 7) Normally Closed, Piezoelectrically Actuated Microvalve; 8) Magnetostrictively Actuated Valves for Cryosurgical Probes; 9) Remote Sensing of Electric Fields in Clouds; 10) Wireless-Communication Headset Subsystem To Enhance Signaling; 11) Power Amplifier With 9 to 13 dB of Gain From 65 to 146 GHz; 12) Humidity Interlock for Protecting a Cooled Laser Crystal; 13) A Lightweight Ambulatory Physiological Monitoring System; 14) Improvements in a Lightning-Measuring Instrument; 15) Broad-Band, Noninvasive Radio-Frequency Current Probe; 16) Web-Based Technology Distributes Lean Models; 17) Software Guides Aeroelastic-Systems Design; and 18) Postprocessing Software for Micromechanics Analysis Code. A Photonics West 2001 Preview Tech Brief supplement to this January 2001 issue is also included.

Description: An optically controlled welding system (10) wherein a welding torch (12) having through-the-torch viewing capabilities is provided with an optical beam splitter (56) to create a transmitted view and a reflective view of a welding operation. These views are converted to digital signals which are then processed and utilized by a computerized robotic welder (15) to make the welding torch responsive thereto. Other features includes an actively cooled electrode holder (26) which minimizes a blocked portion of the view by virtue of being constructed of a single spoke or arm (28) and a weld pool contour detector (14) comprising a laser beam directed onto the weld pool with the position of specular radiation reflected therefrom being characteristic of a penetrated or unpenetrated condition of the weld pool.

Description: A temperature responsive transmitter is provided in which frequency varies linearly with temperature. The transmitter includes two identically biased transistors connected in parallel. A capacitor, which reflects into the common bases to generate negative resistance effectively in parallel with the capacitor, is connected to the common emitters. A crystal is effectively in parallel with the capacitor and the negative resistance. Oscillations occur if the magnitude of the absolute value of the negative resistance is less than the positive resistive impedance of the capacitor and the inductance of the crystal. The crystal has a large linear temperature coefficient and a resonant frequency which is substantially less than the gain-bandwidth product of the transistors to ensure that the crystal primarily determines the frequency of oscillation. A high-Q tank circuit having an inductor and a capacitor is connected to the common collectors to increase the collector current flow which in turn enhances the radiation of the oscillator frequency by the inductor.

Description: An apparatus for measuring high frequency currents includes a non-ferrous core current probe that is coupled to a wide-band transimpedance amplifier. The current probe has a secondary winding with a winding resistance that is substantially smaller than the reactance of the winding. The sensitivity of the current probe is substantially flat over a wide band of frequencies. The apparatus is particularly useful for measuring exposure of humans to radio frequency currents.

Description: An evolvable circuit includes a plurality of reconfigurable switches, a plurality of transistors within a region of the circuit, the plurality of transistors having terminals, the plurality of transistors being coupled between a power source terminal and a power sink terminal so as to be capable of admitting power between the power source terminal and the power sink terminal, the plurality of transistors being coupled so that every transistor terminal to transistor terminal coupling within the region of the circuit comprises a reconfigurable switch.

Description: A method for forming ferroelectric wafers is provided. A prestress layer is placed on the desired mold. A ferroelectric wafer is placed on top of the prestress layer. The layers are heated and then cooled, causing the ferroelectric wafer to become prestressed. The prestress layer may include reinforcing material and the ferroelectric wafer may include electrodes or electrode layers may be placed on either side of the ferroelectric layer. Wafers produced using this method have greatly improved output motion.

Description: A radio frequency strain monitor includes a voltage controlled oscillator for generating an oscillating signal that is input into a propagation path. The propagation path is preferably bonded to the surface of a structure to be monitored and produces a propagated signal. A phase difference between the oscillating and propagated signals is detected and maintained at a substantially constant value which is preferably a multiple of 90.degree. by changing the frequency of the oscillating signal. Any change in frequency of the oscillating signal provides an indication of strain in the structure to which the propagation path is bonded.

Description: A simple and inexpensive crystal oscillator is provided which employs negative voltage gain, single pole response amplifiers. The amplifiers may include such configurations as gate inverters, operational amplifiers and conventional bipolar transistor amplifiers, all of which operate at a frequency which is on the roll-off portion of their gain versus frequency curve. Several amplifier feedback circuit variations are employed to set desired bias levels and to allow the oscillator to operate at the crystal's fundamental frequency or at an overtone of the fundamental frequency. The oscillator is made less expensive than comparable oscillators by employing relatively low frequency amplifiers and operating them at roll-off, at frequencies beyond which they are customarily used. Simplicity is provided because operation at roll-off eliminates components ordinarily required in similar circuits to provide sufficient phase-shift in the feedback circuitry for oscillation to occur.

Description: An interconnect, having some length, that reliably connects two conductors separated by the length of the interconnect when the connection is made but in which one length if unstressed would change relative to the other in operation. The interconnect comprises a base element an intermediate element and a top element. Each element is rectangular and formed of a conducting material and has opposed ends. The elements are arranged in a generally Z-shape with the base element having one end adapted to be connected to one conductor. The top element has one end adapted to be connected to another conductor and the intermediate element has its ends disposed against the other end of the base and the top element. Brazes mechanically and electrically interconnect the intermediate element to the base and the top elements proximate the corresponding ends of the elements. When the respective ends of the base and the top elements are connected to the conductors, an electrical connection is formed therebetween, and when the conductors are relatively moved or the interconnect elements change length the elements accommodate the changes and the associated compression and tension forces in such a way that the interconnect does not mechanically fatigue.

Description: A system is provided for use with wafers that include multiple integrated circuits that include two conductive layers in contact at multiple interfaces. Contact chains are formed beside the integrated circuits, each contact chain formed of the same two layers as the circuits, in the form of conductive segments alternating between the upper and lower layers and with the ends of the segments connected in series through interfaces. A current source passes a current through the series-connected segments, by way of a pair of current tabs connected to opposite ends of the series of segments. While the current flows, voltage measurements are taken between each of a plurality of pairs of voltage tabs, the two tabs of each pair connected to opposite ends of an interface that lies along the series-connected segments. A plot of interface conductances on a normal probability chart, enables prediction of the yield of good integrated circuits from the wafer.

Description: The converter produces a linear analog signal that is linearly proportional to a shaft angle of a resolver over 360.degree.. An excitation cosine signal supplied to the resolver and a response cosine signal received from the output windings of the resolver are converted to logic level signals. Digital logic is performed on the logic level signals in a programmable digital logic device to produce a logic level pulse-width modulated signal. The logic level pulse-width modulated signal is used to control a switch to switch between two reference voltage levels to produce a pulse-width modulated signal, which is filtered and buffered to produce the linear analog signal.

Description: A block of electrically-conductive material which is to be formed into a body with internal and/or external surfaces that approximate hyperboloids of one sheet is placed so that its axis is set at a predetermined skew angle with relation to a travelling EDM electrode wire and the electrode wire is then moved into cutting proximity of the body. Thereafter, by revolving the body about its own axis, the external and/or internal surfaces of the body will be cut into an approximate hyperbolic surface of revolution depending upon whether the body is positioned with the cutting wire outside of the body or in a previously-formed longitudinal passage in the body. As an alternative technique, elongated channels can also be cut into the walls of the body by successively orienting the body to a selected number of angular positions with the electrode wire being either outside of the body or in a previously-formed passage in the body. At each of these angular positions, the electrode wire is moved orthogonally with respect to the axis of the wire while both the body axis skew angle and the rotational position about that axis are controlled for cutting a channel or groove in the body as required to relieve stresses in the material of the body or to convey a coolant fluid.

Description: A four-terminal electrical connector device (40) for testing and measuring unknown resistances of initiators (11) used for starting pyrotechnic events aboard a Space Transportation System. The testing device minimizes contact resistance degradation effects and so improves the reliability of resistance measurement taken with the device. Separate and independent voltage sensing (19) and current supply (20) circuits each includes a pair of socket contacts (13-16) for mating engagement with the pins (17,18) of the initiator. The unknown resistance that is measured by the device is the resistance of the bridgewire (23) of the initiator which is required to be between 0.95 and 1.15 ohms.

Description: It is an object of the invention to provide a miniature traveling wave tube which will have most of the advantages of solid state circuitry but with higher efficiency and without being highly sensitive to temperature and various types of electromagnetic radiation and subatomic particles as are solid state devices. The traveling wave tube which is about 2.5 cm in length includes a slow wave circuit (SWS) comprising apertured fins with a top cover which is insulated from the fins by strips or rungs of electrically insulating, dielectric material. Another object of the invention is to construct a SWS of extremely small size by employing various grooving or etching methods and by providing insulating strips or rungs by various deposition and masking techniques.

Description: A timing control system is disclosed which is particularly useful in connection with simulated mortar shells. Special circuitry is provided to assure that the shell does not overshoot, but rather detonates early in case of an improper condition; this ensures that ground personnel will not be harmed by a delayed detonation. The system responds to an externally applied frequency control code which is configured to avoid any confusion between different control modes. A premature detonation routine is entered in case an improper time-setting signal is entered, or if the shell is launched before completion of the time-setting sequence. Special provisions are also made for very early launch situations and improper detonator connections. An alternate abort mode is provided to discharge the internal power supply without a detonation in a manner that can be externally monitored, thereby providing a mechanism for non-destructive testing. The abort mode also accelerates the timing function for rapid testing.

Description: The stated subject of this paper is so broad that it might include everything from the study of the infinitely small recesses of the atom to the vast infinity of galactic space. We will therefore begin by limiting the scope of the subject to a discussion of three questions: --- (1) What are the potentialities of the use of nuclear energy in the exploration of space? --- (2) What uses of nuclear energy in space exploration are expected in the next decade? - - - (3) What is likely to be the impact of space exploration on the development of other applications of nuclear energy? We will discuss these questions in relation to the space activities of the United States as set forth in the National Aeronautics and Space Act of 1958 and in the programs of the National Aeronautics and Space Administration, the agency established by Congress to carry out the policy established in that Act that activities in space should be devoted to peaceful purposes for the benefit of all mankind. Such activities include at present the exploration of space to gain greater knowledge and understanding of the earth and its atmosphere, the moon, planets, and the universe; the application of available knowledge to develop capabilities for other activities in space for the benefit of mankind; and the beginning of the exploration of space by man himself.

Description: A capacitive proximity sensing element, backed by a reflector driven at the same voltage as and in phase with the sensor, is used to reflect the field lines away from a grounded robot arm towards an intruding object, thus dramatically increasing the sensor's range and sensitivity.

Description: A control system for a brushless DC motor responsive to digital control signals is disclosed. The motor includes a multiphase wound stator and a permanent magnet rotor. The rotor is arranged so that each phase winding, when energized from a DC source, will drive the rotor through a predetermined angular position or step. A commutation signal generator responsive to the shaft position provides a commutation signal for each winding. A programmable control signal generator such as a computer or microprocessor produces individual digital control signals for each phase winding. The control signals and commutation signals associated with each winding are applied to an AND gate for that phase winding. Each gate controls a switch connected in series with the associated phase winding and the DC source so that each phase winding is energized only when the commutation signal and the control signal associated with that phase winding are present. The motor shaft may be advanced one step at a time to a desired position by applying a predetermined number of control signals in the proper sequence to the AND gates and the torque generated by the motor may be regulated by applying a separate control signal to each AND gate which is pulse width modulated to control the total time that each switch connects its associated winding to the DC source during each commutation period.

Description: A multi-sensor transducer and processing method allow insitu monitoring of the senor accuracy and transducer `health`. In one embodiment, the transducer has multiple sensors to provide corresponding output signals in response to a stimulus, such as pressure. A processor applies individual weight factors to reach of the output signals and provide a single transducer output that reduces the contribution from inaccurate sensors. The weight factors can be updated and stored. The processor can use the weight factors to provide a `health` of the transducer based upon the number of accurate versus in-accurate sensors in the transducer.

Description: Life-limiting processes in hollow cathodes are determined largely by the temperature of the emitter. To support development of cathode life models we have developed a noncontact temperature measurement technique which employs a stepper motor-driven fiber optic probe. The probe is driven inside the hollow cathode and collects light radiated by the hot interior surface of the emitter. Ratio pyrometry is used determine the axial temperature profile. Thermocouples on the orifice plate provide measurements ofthe external temperature during cathode operation and are used to calibrate the pyrometer system in situ with a small oven enclosing the externally heated cathode. Initial measurements of the temperature distribution in a hollow cathode with the same geometry as a cathode that failed after operating at 12 A emission current for 27800 hours are discussed.

Description: A DC motor is commutated by rotating a magnetic rotor to induce a magnetic field in at least one magnetostatic relay in the motor. Each relay is activated in response to the magnetic field to deliver power to at least one corresponding winding connected to the relay. In some cases, each relay delivers power first through a corresponding primary winding and then through a corresponding secondary winding to a common node. Specific examples include a four-pole, three-phase motor in which each relay is activated four times during one rotation of the magnetic rotor.

Description: A micromachined magnetostatic relay or switch includes a springing beam on which a magnetic actuation plate is formed. The springing beam also includes an electrically conductive contact. In the presence of a magnetic field, the magnetic material causes the springing beam to bend, moving the electrically conductive contact either toward or away from another contact, and thus creating either an electrical short-circuit or an electrical open-circuit. The switch is fabricated from silicon substrates and is particularly useful in forming a MEMs commutation and control circuit for a miniaturized DC motor.

Description: While experimental studies of kinetic-inductance sensors have been limited so far by the temperature range near the superconducting transition, these detectors can be very sensitivity at temperatures well below the transition, where the number of equilibrium quasiparticles is exponentially small. In this regime, a shift of the quasiparticle chemical potential under radiation results in the change of the kinetic inductance, which can be measured by a sensitive SQUID readout. We modeled the kinetic inductance response of detectors made from disordered superconducting Nb, NbC, and MoRe films. Low phonon transparency of the interface between the superconductor and the substrate causes substantial re-trapping of phonons providing high quantum efficiency and the operating time of approximately 1 ms at 1 K. Due to the small number of quasiparticles, the noise equivalent power of the detector determined by the quasiparticle generation-recombination noise can be as small as approximately 10(exp -19) W/Hz(exp 1/2) at He4 temperatures.

Description: Diode modeling for Schottky varactor frequency multipliers above 500 GHz is presented with special emphasis placed on simple models and fitted equations for rapid circuit design. Temperature- and doping-dependent mobility, resistivity, and avalanche current multiplication and breakdown are presented. Next is a discussion of static junction current, including the effects of tunneling as well as thermionic emission. These results have been compared to detailed measurements made down to 80 K on diodes fabricated at JPL, followed by a discussion of the effect on multiplier efficiency. Finally, a simple model of current saturation in the undepleted active layer suitable for inclusion in harmonic balance simulators is derived.

Description: In order to design a quantum circuit that performs a desired quantum computation, it is necessary to find a decomposition of the unitary matrix that represents that computation in terms of a sequence of quantum gate operations. To date, such designs have either been found by hand or by exhaustive enumeration of all possible circuit topologies. In this paper we propose an automated approach to quantum circuit design using search heuristics based on principles abstracted from evolutionary genetics, i.e. using a genetic programming algorithm adapted specially for this problem. We demonstrate the method on the task of discovering quantum circuit designs for quantum teleportation. We show that to find a given known circuit design (one which was hand-crafted by a human), the method considers roughly an order of magnitude fewer designs than naive enumeration. In addition, the method finds novel circuit designs superior to those previously known.

Description: Although many different processes can be used to manufacture linear integrated circuits, the process that is used for most circuits is optimized for high voltage -- a total power supply voltage of about 40 V -- and low cost. This process, which has changed little during the last twenty years, uses lateral and substrate p-n-p transistors. These p-n-p transistors have very wide base regions, increasing their sensitivity to displacement damage from electrons and protons. Although displacement damage effects can be easily treated for individual transistors, the net effect on linear circuits can be far more complex because circuit operation often depends on the interaction of several internal transistors. Note also that some circuits are made with more advanced processes with much narrower base widths. Devices fabricated with these newer processes are not expected to be significantly affected by displacement damage for proton fluences below 1 x 10(exp 12) p/sq cm. This paper discusses displacement damage in linear integrated circuits with more complex failure modes than those exhibited by simpler devices, such as the LM111 comparator, where the dominant response mode is gain degradation of the input transistor. Some circuits fail catastrophically at much lower equivalent total dose levels compared to tests with gamma rays. The device works satisfactorily up to nearly 1 Mrad(Si) when it is irradiated with gamma rays, but fails catastrophically between 50 and 70 krad(Si) when it is irradiated with protons.

Description: An electrode having higher power output is formed of an open mesh current collector such as expanded nickel covering an electrode film applied to a tube of beta-alumina solid electrolyte (BASE). A plurality of cross-members such as spaced, parallel loops of molybdenum metal wire surround the BASE tube. The loops are electrically connected by a bus wire. As the AMTEC cell is heated, the grid of expanded nickel expands more than the BASE tube and the surrounding loop of wire and become diffusion welded to the electrode film and to the wire loops.

Description: A battery charger for incorporation into an electric-powered vehicle is disclosed. The charger includes a ferroresonant voltage-regulating circuit for providing an output voltage proportional to the frequency of an input AC voltage. A high frequency converter converts a DC voltage supplied, for example, from a rectifier connected to a standard AC outlet, to a controlled frequency AC voltage which is supplied to the input of the ferroresonant circuit. The ferroresonant circuit includes an output, a saturable core transformer connected across the output, and a first linear inductor and a capacitor connected in series across the saturable core transformer and tuned to resonate at the third harmonic of the AC voltage from the high frequency converter. The ferroresonant circuit further includes a second linear inductor connected between the input of the ferroresonant circuit and the saturable core transformer. The output voltage from the ferroresonant circuit is rectified and applied across a pair of output terminals adapted to be connected to the battery to be charged. A feedback circuit compares the voltage across the output terminals with a reference voltage and controls the frequency of the AC voltage produced by the high frequency converter to maintain the voltage across the output terminals at a predetermined value. The second linear inductor provides a highly reactive load in the event of a fault across the output terminals to render the charger short-circuit proof.

Description: According to the invention, a digital circuit design embodied in at least one of a structural netlist, a behavioral netlist, a hardware description language netlist, a full-custom ASIC, a semi-custom ASIC, an IP core, an integrated circuit, a hybrid of chips, one or more masks, a FPGA, and a circuit card assembly is disclosed. The digital circuit design includes first and second sub-circuits. The first sub-circuits comprise a first percentage of the digital circuit design and the second sub-circuits comprise a second percentage of the digital circuit design. Each of the second sub-circuits is substantially comprised of one or more kernel circuits. The kernel circuits are comprised of selection circuits. The second percentage is at least 5%. In various embodiments, the second percentage could be at least 10%, 20%, 30%, 40%, 50%, 60%, 70%, 80%, 90%, or 95%.

Description: According to the invention, a digital design method for manipulating a digital circuit netlist is disclosed. In one step, a first netlist is loaded. The first netlist is comprised of first basic cells that are comprised of first kernel cells. The first netlist is manipulated to create a second netlist. The second netlist is comprised of second basic cells that are comprised of second kernel cells. A percentage of the first and second kernel cells are selection circuits. There is less chip area consumed in the second basic cells than in the first basic cells. The second netlist is stored. In various embodiments, the percentage could be 2% or more, 5% or more, 10% or more, 20% or more, 30% or more, or 40% or more.

Description: The present invention discloses a new family of switching amplifier classes called class E/F amplifiers. These amplifiers are generally characterized by their use of the zero-voltage-switching (ZVS) phase correction technique to eliminate of the loss normally associated with the inherent capacitance of the switching device as utilized in class-E amplifiers, together with a load network for improved voltage and current wave-shaping by presenting class-F.sup.-1 impedances at selected overtones and class-E impedances at the remaining overtones. The present invention discloses a several topologies and specific circuit implementations for achieving such performance.

Description: A power supply for a quadrupole mass spectrometer which operates using an RF signal. The RF signal is controllable via a feedback loop. The feedback loop is from the output, through a comparator, and compared to a digital signal. An air core transformer is used to minimize the weight. The air core transformer is driven via two out of phase sawtooth signals which drive opposite ends of the transformer.

Description: A three-dimensional connection system uses a plurality of printed wiring boards with connectors completely around the printed wiring boards, and connected by an elastomeric interface connector. The device includes internal space to allow room for circuitry. The device is formed by stacking an electronics module, an elastomeric interface board on the electronics module such that the interface board's exterior makes electrical connection with the connectors around the perimeter of the interface board, but the internal portion is open to allow room for the electrical devices on the printed wiring board. A plurality of these devices are stacked between a top stiffener and a bottom device, and held into place by alignment elements.

Description: A current determiner having an output at which representations of input currents are provided having an input conductor for the input current and a current sensor supported on a substrate electrically isolated from one another but with the sensor positioned in the magnetic fields arising about the input conductor due to any input currents. The sensor extends along the substrate in a direction primarily perpendicular to the extent of the input conductor and is formed of at least a pair of thin-film ferromagnetic layers separated by a non-magnetic conductive layer. The sensor can be electrically connected to electronic circuitry formed in the substrate including a nonlinearity adaptation circuit to provide representations of the input currents of increased accuracy despite nonlinearities in the current sensor, and can include further current sensors in bridge circuits.

Description: In an integrated electron tunneling sensor, an automatic tunneling control circuit varies a high voltage bias applied to the sensor deflection electrode in response to changes in sensor output to maintain the proper gap between the sensor tip and membrane. The control circuit ensures stable tunneling activity in the presence of large signals and other disturbances to the sensor. Output signals from the module may be derived from the amplified sensor output. The integrated sensor module is particularly well adapted for use in blood glucose measurement and monitoring system.

Description: A sensor array for detecting an analyte in a fluid, comprising at least first and second chemically sensitive resistors electrically connected to an electrical measuring apparatus, wherein each of the chemically sensitive resistors comprises a mixture of nonconductive material and a conductive material. Each resistor provides an electrical path through the mixture of nonconductive material and the conductive material. The resistors also provide a difference in resistance between the conductive elements when contacted with a fluid comprising an analyte at a first concentration, than when contacted with an analyte at a second different concentration. A broad range of analytes can be detected using the sensors of the present invention. Examples of such analytes include, but are not limited to, alkanes, alkenes, alkynes, dienes, alicyclic hydrocarbons, arenes, alcohols, ethers, ketones, aldehydes, carbonyls, carbanions, polynuclear aromatics, organic derivatives, biomolecules, sugars, isoprenes, isoprenoids and fatty acids. Moreover, applications for the sensors of the present invention include, but are not limited to, environmental toxicology, remediation, biomedicine, material quality control, food monitoring and agricultural monitoring.

Description: Radar electronics developed for past JPL space missions historically had been custom designed and as such, given budgetary, time, and risk constraints, had not been optimized for maximum flexibility or miniaturization. To help reduce cost and risk of future radar missions, a generic radar module was conceived. The module includes a 1.25-GHz (L-band) transceiver and incorporates miniature high-density packaging of integrated circuits in die/chip form. The technology challenges include overcoming the effect of miniaturization and high packaging density to achieve the performance, reliability, and environmental ruggedness required for space missions. The module was chosen to have representative (generic) functionality most likely required from an L-band radar. For very large aperture phased-array spaceborne radar missions, the large dimensions of the array suggest the benefit of distributing the radar electronics into the antenna array. For such applications, this technology is essential in order to bring down the cost, mass, and power of the radar electronics module replicated in each panel of the array. For smaller sized arrays, a single module can be combined with the central radar controller and still provide the bene.ts of configuration .exibility, low power, and low mass. We present the design approach for the radar electronics module and the test results for its radio frequency (RF) portion: a miniature, low-power, radiation-hard L-band transceiver.

Description: MEMS have shown a significant promise in the last decade for a variety of applications such as air-bag, pressure sensors, accelerometer, microgyro, chemical sensors, artificial nose, etc. Standard semiconductor microelectronics packaging needs the integrated circuits (IC) to be protected from the harsh environment, and provide electrical communication with the other parts of the circuit, facilitate thermal dissipation efficiently, and impart mechanical strength to the silicon die. Microelectronics packaging involves wafer dicing, bonding, lead attachment, encapsulation to protect from the environment, electrical integrity, and package leak tests to assure the reliable IC packaging technology. Active elements or microstructures in MEMS devices often interfaces with the hostile environment where packaging leak tests and testing of such devices using chemical and mechanical parameters will be very difficult and expensive. Packaging of MEMS is significantly complex as they serve to protect from the environment and microstructures interact with the same environment to measure or affect the desired physical or chemical parameters. The most of the silicon circuitry is sensitive to temperature, moisture, magnetic field, light, and electromagnetic interference. The package must then protect the on-board silicon circuitry while simultaneously exposing the microsensor to the effect it measures to assure the packaging technology of MEMS. MEMS technology has a major application in developing a microspacecraft for space systems provided reliability of MEMS packaging technology is sufficiently addressed. This MEMS technology would eventually miniaturize many of the components of the spacecraft to reach the NASA's goal by building faster, cheaper, better, smaller spacecraft to explore the space more effectively. This paper discusses the latest developments in the MEMS technology and challenging technical issues in the packaging of hermetically sealed and non-hermetically sealed MEMS sensor devices for microspacecraft applications.

Description: Switching and amplifying characteristics of a newly developed monolithic InGaAs Active Pixel Imager Array are presented. The sensor array is fabricated from InGaAs material epitaxially deposited on an InP substrate. It consists of an InGaAs photodiode connected to InP depletion-mode junction field effect transistors (JFETs) for low leakage, low power, and fast control of circuit signal amplifying, buffering, selection, and reset. This monolithically integrated active pixel sensor configuration eliminates the need for hybridization with silicon multiplexer. In addition, the configuration allows the sensor to be front illuminated, making it sensitive to visible as well as near infrared signal radiation. Adapting the existing 1.55 micrometer fiber optical communication technology, this integration will be an ideal system of optoelectronic integration for dual band (Visible/IR) applications near room temperature, for use in atmospheric gas sensing in space, and for target identification on earth. In this paper, two different types of small 4 x 1 test arrays will be described. The effectiveness of switching and amplifying circuits will be discussed in terms of circuit effectiveness (leakage, operating frequency, and temperature) in preparation for the second phase demonstration of integrated, two-dimensional monolithic InGaAs active pixel sensor arrays for applications in transportable shipboard surveillance, night vision, and emission spectroscopy.

Description: We describe the design, fabrication, and the performance of a low-noise dual-polarized quasi-optical superconductor insulator superconductor (SIS) mixer at 550 GHz. The mixer utilizes a novel cross-slot antenna on a hyperhemispherical substrate lens, two junction tuning circuits, niobium trilayer junctions, and an IF circuit containing a lumped element 180 deg hybrid. The antenna consists of an orthogonal pair of twin-slot antennas, and has four feed points, two for each polarization. Each feed point is coupled to a two-junction SIS mixer. The 180 deg IF hybrid is implemented using a lumped element/microstrip circuit located inside the mixer block. Fourier transform spectrometer (FTS) measurements of the mixer frequency response show good agreement with computer simulations. The measured co-polarized and cross-polarized patterns for both polarizations also agree with the theoretical predictions. The noise performance of the dual-polarized mixer is excellent, giving uncorrected receiver noise temperature of better than 115 K (DSB) at 528 GHz for both the polarizations.

Description: A reliable moisture-indicating capactive sensor is provided with wire electrodes at least one of which includes a coating of moisture-absorbing dielectric material by spirally twisting the wire electrodes about each other, thereby establishing a pair of electrodes in contact with opposite surfaces of a layer of dielectric material, and assuring consistent contact of each electrode with the dielectric material despite changes in environmental conditions.

Description: A method and apparatus for logging current-voltage (I-V) characteristic d of a solar cell module (10) in two modes using a portable instrument. One mode controls the load current through a circuit (36) in 256 equal intervals while voltage is measured from open circuit to at least halfway into the knee of the curve and the other mode controls the load voltage through a circuit (34) in 256 equal intervals from the lowest voltage measurement possible (short circuit) to at least halfway into the knee of the curve, under control of a microcomputer (12). All measurements are packed by discarding each measurement that is within 0.5% of the value predicted from two previous measurements, except every ninth (9th) measurement which is retained. The remaining data is further packed into a memory block of a detachable storage medium (14) by recording the data points in sequence following a header containing data common to all points, with each point having the value of the controlled parameter recorded as the number of increments from the previous point recorded followed by the measured value. The detachable storage medium is preferably a solid state device for reliability, and is transferable to a playback terminal which unpacks the data for analysis and display.

Description: This invention relates to a motor control system for a brushless DC motor having an inverter responsively coupled to the motor control system and in power transmitting relationship to the motor. The motor control system includes a motor rotor speed detecting unit that provides a pulsed waveform signal proportional to rotor speed. This pulsed waveform signal is delivered to the inverter to thereby cause an inverter fundamental current waveform output to the motor to be switched at a rate proportional to said rotor speed. In addition, the fundamental current waveform is also pulse width modulated at a rate proportional to the rotor speed. A fundamental current waveform phase advance circuit is controllingly coupled to the inverter. The phase advance circuit is coupled to receive the pulsed waveform signal from the motor rotor speed detecting unit and phase advance the pulsed waveform signal as a predetermined function of motor speed to thereby cause the fundamental current waveform to be advanced and thereby compensate for fundamental current waveform lag due to motor winding reactance which allows the motor to operate at higher speeds than the motor is rated while providing optimal torque and therefore increased efficiency.

Description: A polyphase SCR inverter (10) having N switching poles, each comprised of two SCR switches (1A, 1B; 2A, 2B . . . NA, NB) and two diodes (D1B; D1B; D2A, D2B . . . DNA, DNB) in series opposition with saturable reactors (L1A, L1B; L2A, L2B . . . LNA, LNB) connecting the junctions between the SCR switches and diodes to an output terminal (1, 2 . . . 3) is commutated with only one GTO thyristor (16) connected between the common negative terminal of a dc source and a tap of a series inductor (14) connected to the positive terminal of the dc source. A clamp winding (22) and diode (24) are provided, as is a snubber (18) which may have its capacitance (c) sized for maximum load current divided into a plurality of capacitors (C.sub.1, C.sub.2 . . . C.sub.N), each in series with an SCR switch S.sub.1, S.sub.2 . . . S.sub.N). The total capacitance may be selected by activating selected switches as a function of load current. A resistor 28 and SCR switch 26 shunt reverse current when the load acts as a generator, such as a motor while braking.

Description: A two-way coherent inductive communications link between an external transceiver and an internal transceiver located in a biologically implanted programmable medical device. Digitally formatted command data and programming data is transmitted to the implanted medical device by frequency shift keying the inductive communications link. Internal transceiver is powered by the inductive field between internal and external transceivers. Digitally formatted data is transmitted to external transceiver by internal transceiver amplitude modulating inductive field. Immediate verification of the establishment of a reliable communications link is provided by determining existence of frequency lock and bit phase lock between internal and external transceivers.

Description: Driving a quadrupole mass spectrometer includes obtaining an air core transformer with a primary and a secondary, matching the secondary to the mass spectrometer, and driving the primary based on first and second voltage levels. Driving of the primary is via an isolating stage that minimizes low level drive signal coupling.

Description: Propagation delay of a signal through a channel is measured by cyclically generating a first step-wave signal for transmission through the channel to a two-input logic element and a second step-wave signal with a controlled delay to the second input terminal of the logic element. The logic element determines which signal is present first at its input terminals and stores a binary signal indicative of that determination for control of the delay of the second signal which is advanced or retarded for the next cycle until both the propagation delayed first step-wave signal and the control delayed step-wave signal are coincident. The propagation delay of the channel is then determined by measuring the time between the first and second step-wave signals out of the controlled step-wave signal generator.

Description: We present some detail of the waveguide probe and SIS mixer chip designs for a low-noise 180-300 GHz double- sideband receiver with an instantaneous RF bandwidth of 24 GHz. The receiver's single SIS junction is excited by a broadband, fixed-tuned waveguide probe on a silicon substrate. The IF output is coupled to a 6-18 GHz MMIC low- noise preamplifier. Following further amplification, the output is processed by an array of 4 GHz, 128-channel analog autocorrelation spectrometers (WASP 11). The single-sideband receiver noise temperature goal of 70 Kelvin will provide a prototype instrument capable of rapid line surveys and of relatively efficient carbon monoxide (CO) emission line searches of distant, dusty galaxies. The latter application's goal is to determine redshifts by measuring the frequencies of CO line emissions from the star-forming regions dominating the submillimeter brightness of these galaxies. Construction of the receiver has begun; lab testing should begin in the fall. Demonstration of the receiver on the Caltech Submillimeter Observatory (CSO) telescope should begin in spring 2003.

Description: Rayovac Corporation's Luma 2 flashlight incorporates NASA's systems redundancy. The company also received assistance from NERAC. The flashlight has an extra-bright Super Krypton primary bulb and an independent backup system including a separate lithium power cell (a NASA developed technology), its own bulb and switch with corrosion proof sealed contacts. NERAC has also assisted Rayovac in developing other products.

Description: Fabrication technology for submillimeter-wave monolithic circuits has made tremendous progress in recent years and it is now possible to fabricate sub-micron GaAs Schottky devices on a number of substrate types, such as membranes, frame-less membranes or substrateless circuits. These new technologies allow designers to implement very high frequency circuits, either Schottky mixers or multipliers, in a radically new manner. This paper will address the design, fabrication, and preliminary results of a 1.2 THz planar tripler fabricated on a GaAs frame-less membrane, the concept of which was described previously. The tripler uses a diode pair in an antiparallel configuration similar to designs used at lower frequency. To date, this tripler has produced a peak output power of 80 microW with 0.9% efficiency at room temperature (at 1126 GHz). The measured fix-tuned 3 dB bandwidth is about 3.5%. When cooled, the output power reached a peak of 195 microW at 120 K and 250 microW at 50 K. The ease with which this circuit was implemented along with the superb achieved performance indicates that properly designed planar devices such as this tripler can now usher in a new era of practical very high frequency multipliers.

Description: The 2000 solar cell calibration balloon flight campaign consisted of two flights, which occurred on June 27, 2000, and July 5, 2000. All objectives of the flight program were met. Sixty-two modules were carried to an altitude of approximately 120,000 ft (36.6 km). Full I-V curves were measured on sixteen of these modules, and output at a fixed load was measured on thirty-seven modules (forty-six cells), with some modules repeated on the second flight. Nine modules were flown for temperature measurement only. This data was corrected to 28 C and to 1 AU (1.496x10(exp 8) km). The calibrated cells have been returned to their owners and can now be used as reference standards in simulator testing of cells and arrays.

Description: Lithium ion cells are being developed under the NASA/Air Force Consortium for the upcoming aerospace missions. First among these missions are the Mars 2001 Lander and Mars 2003 Lander and Rover missions. Apart from the usual needs of high specific energy, energy density and long cycle life, a critical performance characteristic for the Mars missions is low temperature performance. The batteries need to perform well at -20 C, with at least 70% of the rated capacity realizable at moderate discharge rates (C/5). Several modifications have been made to the lithium ion chemistry, mainly with respect to the electrolyte, both at JPL' and elsewhere to achieve this. Another key requirement for the battery is its storageability during pre-cruise and cruise periods. For the Mars programs, the cruise period is relatively short, about 12 months, compared to the Outer Planets missions (3-8 years). Yet, the initial results of our storage studies reveal that the cells do sustain noticeable permanent degradation under certain storage conditions, typically of 10% over two months duration at ambient temperatures, attributed to impedance buildup. The build up of the cell impedance or the decay in the cell capacity is affected by various storage parameters, i.e., storage temperature, storage duration, storage mode (open circuit, on buss or cycling at low rates) and state of charge. Our preliminary studies indicate that low storage temperatures and states of charge are preferable. In some cases, we have observed permanent capacity losses of approx. 10% over eight-week storage at 40 C, compared to approx. 0-2% at O C. Also, we are attempting to determine the impact of cell chemistry and design upon the storageability of Li ion cells.

Description: We have studied intersubband transitions in InAs/AlSb quantum wells experimentally and theoretically. Experimentally, we performed polarization-resolved infrared absorption spectroscopy to measure intersubband absorption peak frequencies and linewidths as functions of temperature (from 4 K to room temperature) and quantum well width (from a few nm to 10 nm). To understand experimental results, we performed a self-consistent 8-band k-p band-structure calculation including spatial charge separation. Based on the calculated band structure, we developed a set of density matrix equations to compute TE and TM optical transitions self-consistently, including both interband and intersubband channels. This density matrix formalism is also ideal for the inclusion of various many-body effects, which are known to be important for intersubband transitions. Detailed comparison between experimental data and theoretical simulations is presented.

Description: A method and system is disclosed which provides precise multi-function digitally implementable modulation for a communication system. The invention provides a modulation signal for a communication system in response to an input signal from a data source. A digitized time response is generated from samples of a time domain representation of a spectrum profile of a selected modulation scheme. The invention generates and stores coefficients for each input symbol in accordance with the selected modulation scheme. The output signal is provided by a plurality of samples, each sample being generated by summing the products of a predetermined number of the coefficients and a predetermined number of the samples of the digitized time response. In a specific illustrative implementation, the samples of the output signals are converted to analog signals, filtered and used to modulate a carrier in a conventional manner. The invention is versatile in that it allows for the storage of the digitized time responses and corresponding coefficient lookup table of a number of modulation schemes, any of which may then be selected for use in accordance with the teachings of the invention.

Description: The cell stack can be operated as a fuel cell stack or as an electrolysis cell stack. The stack consists of a series of alternate fuel cell subassemblies with intervening electrolysis cell subassemblies, and interspersed cooling plates. The water produced and consumed in the two modes of operation migrates between adjacent cell subassemblies. The component plates are annular with a central hydrogen plenum and integral internal oxygen manifolds. No fluid pumps are needed to operate the stack in either mode.

Description: This presentation outlines the performance characteristics of state-of-the-art nonvolatile memory devices and identifies charge storage mechanisms in nanocrystal floating gate materials.

Description: Optocoupler failures occurred on the Topex-Poseidon spacecraft after about two years of operation. Later work in the laboratory showed that the failures were due to extreme sensitivity of LEDs within the optocouplers to displacement damage from protons. Although earlier work had been done on displacement damage in light-emitting diodes, none of the devices studied previously had been heavily damaged at the low radiation levels where the optocouplers failed in space. Subsequent work has shown that LED damage varies over an extremely wide range, depending on the particular manufacturing technology. This paper discusses proton degradation of linear and digital optocouplers. One obvious way to harden optocoupler technologies is to select LEDs that are more resistant to displacement damage. A direct comparison is made of degradation of a commercial linear optocoupler from one manufacturer with a modified version of the same device with a different LED technology. Other factors, including degradation of optical photoresponse and transistor -ain are also discussed, along with basic comparisons of digital and analog optocouplers. Linear optocouplers are designed with somewhat different requirements than digital optocouplers, which not only affects their radiation response but also the interpretation of radiation test data.

Description: The GaAs/AlGaAs based Quantum Well Infrared Photodetectors (QWIPs) afford greater flexibility than the usual extrinsically doped semiconductor IR detectors because the wavelength of the peak response and cutoff can be continuously tailored over any wavelength between 6-20 micrometers. The spectral band width of these detectors can be tuned from narrow (DELTA)lamba/lamba approx. 10 %)) to wide (DELTA)lamba/lamba approx. 50 %) allowing various applications. Also, QWIP offers multi-color infrared cameras which is capable of simultaneously acquiring images in different infrared bands. Each pixel of such array consists of vertically stacked, independently readable, QWIP detectors sensitive in different narrow infrared bands. In this article, we discuss the development and results of the 640 x 512 dual-band and four-band QWIP FPAs.

Description: The test results of measurements performed on two different sizes of ferroelectric random access memory (FeRAM) suggest the degradation is due to the low radiation tolerance of sense amplifiers and reference voltage generators which are based on commercial complementary metal oxide semiconductor (CMOS) technology. This paper presents total ionizing dose (TID) testing of 64Kb Ramtron FM1608 and 256Kb Ramtron FM1808.

Description: The opto-Electronic Oscillator (OEO) has already demonstrated superior spectral purity as a for microwave and millimeter wave reference signals. Experimental results have produced a performance characterized by noise as low as -50 dBc/Hz at 10 Hz and -140 dBc/Hz for a 10 GHz oscillator. This performance is significant because it was produced by an oscillator that was free running. Since the noise in an OEO is independent of the oscillation frequency, the same performance may also be obtained at higher frequency. The recent work in our laboratory has been focused in three areas: 1) realization of a compact OEO based on semiconductor lasers and modulators, 2) reduction of the close-to-carrier noise of the OEO originating from the 1/f noise of the amplifier, and 3) miniaturization of the OEO. In this paper we report on progress made in these areas, and describe future plans to increase the performance and the efficiency of the OEO.

Description: The unitary electrode (10) comprises a porous sheet (12) of fiberglass the strands (14) of which contain a coating (16) of conductive tin oxide. The lower portion of the sheet contains a layer (18) of resin and the upper layer (20) contains lead dioxide forming a positive active electrode on an electrolyte-impervious layer. The strands (14) form a continuous conduction path through both layers (16, 18). Tin oxide is prevented from reduction by coating the surface of the plate facing the negative electrode with a conductive, impervious layer resistant to reduction such as a thin film (130) of lead or graphite filled resin adhered to the plate with a layer (31) of conductive adhesive. The plate (10) can be formed by casting a molten resin from kettle (60) onto a sheet of glass wool (56) overlying a sheet of lead foil and then applying positive active paste from hopper (64) into the upper layer (68). The plate can also be formed by passing an assembly of a sheet ( 80) of resin, a sheet (86) of sintered glass and a sheet (90) of lead between the nip (92) of heated rollers (93, 95) and then filling lead oxide into the pores (116) of the upper layer (118).

Description: Visible light emission is obtained from a plasma containing elemental barium including neutral barium atoms and barium ion species. Neutral barium provides a strong green light emission in the center of the visible spectrum with a highly efficient conversion of electrical energy into visible light. By the selective excitation of barium ionic species, emission of visible light at longer and shorter wavelengths can be obtained simultaneously with the green emission from neutral barium, effectively providing light that is visually perceived as white. A discharge vessel contains the elemental barium and a buffer gas fill therein, and a discharge inducer is utilized to induce a desired discharge temperature and barium vapor pressure therein to produce from the barium vapor a visible light emission. The discharge can be induced utilizing a glow discharge between electrodes in the discharge vessel as well as by inductively or capacitively coupling RF energy into the plasma within the discharge vessel.

Description: An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit.

Description: Wiring defects are located by detecting a reflected signal that is developed when an arc occurs through the defect to a nearby ground. The time between the generation of the signal and the return of the reflected signal provides an indication of the distance of the arc (and therefore the defect) from the signal source. To ensure arcing, a signal is repeated at gradually increasing voltages while the wire being tested and a nearby ground are immersed in a conductive medium. In order to ensure that the arcing occurs at an identifiable time, the signal whose reflection is to be detected is always made to reach the highest potential yet seen by the system.

Description: A reference-free direct digital lock-in system (RDDL 10) has a first input coupled to a periodic electrical signal and an output for outputting an indication of a magnitude of a desired periodic signal component. The RDDL also has a second input for receiving a signal (9) that specifies a reference period value, and operates to autonomously generate a lock-in reference signal having a specified period and a phase that is adjusted to maximize a magnitude of the outputted desired periodic signal component. In an embodiment of a measurement system that includes the RDDL 10 an optical source provides a chopped light beam having wavelengths within a predetermined range of wavelengths, and the periodic electrical signal is generated by at least one photodetector that is illuminated by the chopped light beam. In this embodiment the measurement system characterizes, for at least one wavelength of light that is generated by the optical source, a spectral response of the at least one photodetector. The RDDL can operate in nonreal-time upon previously generated and stored digital equivalent values of the periodic electrical signal or signals.

Description: Lithium ion rechargeable batteries are being developed for various aerospace applications under a NASA-DoD Interagency program. These applications require further improvements in several areas, specifically in the cycle life for LEO and GEO satellites and in the low temperature performance for the Mars Lander and Rover missions. Accordingly, we have been pursuing research studies to achieve improvement in the low temperature performance, long cycle life and active life of Li ion cells. The studies are mainly focused on electrolytes, to identify newer formulations of new electrolyte additives to enhance Li permeability (at low temperatures) and stability towards the electrode. The latter approach is particularly aimed at the formation suitable SEI (solid electrolyte interphase) on carbon electrodes. In this paper, we report the beneficial effect of using alkyl pyrocarbonates as electrolyte additives to improve the low temperature performance of Li ion cells.

Description: The quantum mechanical functionality of nanoelectronic devices such as resonant tunneling diodes (RTDs), quantum well infrared-photodetectors (QWIPs), quantum well lasers, and heterostructure field effect transistors (HFETs) is enabled by material variations on an atomic scale. The design and optimization of such devices requires a fundamental understanding of electron transport in such dimensions. The Nanoelectronic Modeling Tool (NEMO) is a general-purpose quantum device design and analysis tool based on a fundamental non-equilibrium electron transport theory. NEW was combined with a parallelized genetic algorithm package (PGAPACK) to evolve structural and material parameters to match a desired set of experimental data. A numerical experiment that evolves structural variations such as layer widths and doping concentrations is performed to analyze an experimental current voltage characteristic. The genetic algorithm is found to drive the NEMO simulation parameters close to the experimentally prescribed layer thicknesses and doping profiles. With such a quantitative agreement between theory and experiment design synthesis can be performed.

Description: New effects that complicate the application of linear devices in space are discussed, including enhanced damage at low dose rate and proton damage, which cause permanent degradation. Transients produced by protons and heavy ions are also discussed.

Description: A need exists for a standardized battery of human performance tests in order to measure the effects of various treatments. The present paper reports on progress in such a program, funded jointly by NASA and the Navy. Three batteries are available which differ in length (7.5, 15, and 30 minutes), and number of tests in the battery (3, 10, and 15). All tests are implemented on a portable, lap-held, briefcase-sized microprocessor (NEC PC 8201A). Performances measured include information processing, memory, visual perception, reasoning, motor skills, etc. Current programs are underway to determine norms, reliabilities, stabilities, factor structure of tests, comparisons with marker tests, apparatus suitability, etc.

Description: This presentation will begin with a description of the previous published work contributing to the results reported here. The previously developed one dimensional continuum model will be generalized to two dimensions and a Green's function for the resulting differential equation will be obtained as an eigenfunction expansion. This will be used to obtain dynamic solutions relevant to the steering of the radiated beam. Finally, some remarks concerning limitations on the interoscillator phase difference will be provided.

Description: Three-dimensional MEMS microsystems that are commercially fabricated require minimal post-processing and are easily integrated with CMOS signal processing electronics. Measurements to evaluate the fabrication process (such as cross-sectional imaging and device performance characterization) provide much needed feedback in terms of reliability and quality assurance. MEMS technology is bringing a new class of microscale measurements to fruition. The relatively small size of MEMS microsystems offers the potential for higher fidelity recordings compared to macrosize counterparts, as illustrated in the measurement of muscle cell forces.

Description: We have fabricated and tested submillimeter-wave superconductor-insulator-superconductor (SIS) mixers using very high current density Nb/AlN/Nb tunnel junctions (J(sub c) approximately equal 30 kA/sq cm) . The junctions have low resistance-area products (R(sub N)A approximately 5.6 Omega.sq micron), good subgap to normal resistance ratios R(sub sg)/R(sub N) approximately equal 10, and good run-to-run reproducibility. From Fourier transform spectrometer measurements, we infer that omega.R(sub N)C = 1 at 270 GHz. This is a factor of 2.5 improvement over what is generally available with Nb/AlO(x)/Nb junctions suitable for low-noise mixers. The AlN-barrier junctions are indeed capable of low-noise operation: we measure an uncorrected receiver noise temperature of T(sub RX) = 110 K (DSB) at 533 GHz for an unoptimized device. In addition to providing wider bandwidth operation at lower frequencies, the AlN-barrier junctions will considerably improve the performance of THz SIS mixers by reducing RF loss in the tuning circuits.

Description: Sculptured circuits do not require attached pins or connectors, and have built-in terminals. They are manufactured by Advanced Circuit Technology, Inc. and were developed after product research and development through NERAC. They are used in electronic systems.

Description: Application of semiconductor devices in high reliability space systems requires a thorough understanding of the reliability and failure mechanisms associated with the selected devices. This paper provides a description of the reliability and qualification issues related to the application of compound semiconductor devices in critical space systems. A discussion of common failure mechanisms, radiation effects and other reliability concerns is provided along with a discussion of methods for technology qualification for high reliability space applications.

Description: We have developed a niobium titanium nitride (NbTiN) based superconductor- insulator-superconductor (SIS) receiver to cover the 350 micron atmospheric window. This frequency band lies entirely above the energy gap of niobium (700 GHz), a commonly used SIS superconductor. The instrument uses an open structure twin-slot SIS mixer that consists of two Nb/AlN/NbTiN tunnel junctions, NbTiN thin-film microstrip tuning elements, and a NbTiN ground plane. The optical configuration is very similar to the 850 GHz waveguide receiver that was installed at the Caltech Submillimeter Observatory (CSO) in 1997. To minimize front-end loss, we employed reflecting optics and a cooled beamsplitter at 4 K. The instrument has an uncorrected receiver noise temperature of 205K DSB at 800 GHz and 410K DSB at 900 GHz. The degradation in receiver sensitivity with frequency is primarily due to an increase in the mixer conversion loss, which is attributed to the mismatch between the SIS junction and the twin-slot antenna impedance. The overall system performance has been confirmed through its use at the telescope to detect a wealth of new spectroscopic lines.

Description: This paper reviews the accelerated thermal cycling test methods that are currently used by industry to characterize the interconnect reliability of commercial-off-the-shelf (COTS) ball grid array (BGA) and chip scale package (CSP) assemblies. Acceleration induced failure mechanisms varied from conventional surface mount (SM) failures for CSPs. Examples of unrealistic life projections for other CSPs are also presented. The cumulative cycles to failure for ceramic BGA assemblies performed under different conditions, including plots of their two Weibull parameters, are presented. The results are for cycles in the range of -30 C to 100 C, -55 C to 100 C, and -55 C to 125 C. Failure mechanisms as well as cycles to failure for thermal shock and thermal cycling conditions in the range of -55 C to 125 C were compared. Projection to other temperature cycling ranges using a modified Coffin-Manson relationship is also presented.

Description: Some years ago, Stephan proposed an approach to one dimensional (linear) phased array beam steering which requires only a single phase shifter. This involves the use of a linear array of voltage-controlled electronic oscillators coupled to nearest neighbors. The oscillators are mutually injection locked by controlling their coupling and tuning appropriately. Stephan's approach consists of deriving two signals from a master oscillator, one signal phase shifted with respect to the other by means of a single phase shifter. These two signals are injected into the end oscillators of the array. The result is a linear phase progression across the oscillator array. Thus, if radiating elements are connected to each oscillator and spaced uniformly along a line, they will radiate a beam at an angle to that line determined by the phase gradient which is, in turn, determined by the phase difference between the injection signals.The beam direction is therefore controlled by adjusting this phase difference. Recently, Pogorzelski and York presented a formulation which facilitates theoretical analysis of the above beam steering technique. This was subsequently applied by Pogorzelski in analysis of two dimensional beam steering using perimeter detuning of a coupled oscillator array. The formulation is based on a continuum model in which the oscillator phases are represented by a continuous function satisfying a partial differential equation of diffusion type. This equation can be solved via the Laplace transform and the resulting solution exhibits the dynamic behavior of the array as the beam is steered. Stephan's beam steering technique can be similarly generalized to two-dimensional arrays in which the beam control signals are applied to the oscillators on the perimeter of the array. In this paper the continuum model for this two-dimensional case is developed and the dynamic solution for the corresponding aperture phase function is obtained. The corresponding behavior of the resulting far-zone radiation pattern is displayed as well.

Description: An array of triboelectric sensors is used for testing the electrostatic properties of a remote environment. The sensors may be mounted in the heel of a robot arm scoop. To determine the triboelectric properties of a planet surface, the robot arm scoop may be rubbed on the soil of the planet and the triboelectrically developed charge measured. By having an array of sensors, different insulating materials may be measured simultaneously. The insulating materials may be selected so their triboelectric properties cover a desired range. By mounting the sensor on a robot arm scoop, the measurements can be obtained during an unmanned mission.

Description: A secondary battery (10) of high energy density and long cycle is achieved by coating the separator (18) with a film (21) of cationic polymer such as polyvinyl-imidazoline. The binder of the positive electrode (14) such as an ethylene-propylene elastomer binder (26) containing particles (28) of TiS.sub.2 chalcogenide can also be modified to contain sulfone functional groups by incorporating liquid or solid sulfone materials such as 0.1 to 5 percent by weight of sulfolane into the binder. The negative lithium electrode (14), separator (18) and positive electrode (16) are preferably spirally wound and disposed within a sealed casing (17) containing terminals (32, 34). The modified separator and positive electrode are more wettable by the electrolytes in which a salt is dissolved in a polar solvent such as sulfolane.

Description: A digital integrated circuit chip is designed by identifying a logical structure to be implemented. This logical structure is represented in terms of a logical operations, at least 5% of which include selection operations. A determination is made of logic cells that correspond to an implementation of these logical operations.

Description: A modular electronics packaging system includes multiple packaging slices that are mounted horizontally to a base structure. The slices interlock to provide added structural support. Each packaging slice includes a rigid and thermally conductive housing having four side walls that together form a cavity to house an electronic circuit. The chamber is enclosed on one end by an end wall, or web, that isolates the electronic circuit from a circuit in an adjacent packaging slice. The web also provides a thermal path between the electronic circuit and the base structure. Each slice also includes a mounting bracket that connects the packaging slice to the base structure. Four guide pins protrude from the slice into four corresponding receptacles in an adjacent slice. A locking element, such as a set screw, protrudes into each receptacle and interlocks with the corresponding guide pin. A conduit is formed in the slice to allow electrical connection to the electronic circuit.

Description: An electrode having increased output with slower degradation is formed of a film applied to a beta-alumina solid electrolyte (BASE). The film comprises a refractory first metal M.sup.1 such as a platinum group metal, suitably platinum or rhodium, capable of forming a liquid or a strong surface adsorption phase with sodium at the operating temperature of an alkali metal thermoelectric converter (AMTEC) and a second refractory metal insoluble in sodium or the NaM.sup.1 liquid phase such as a Group IVB, VB or VIB metal, suitably tungsten, molybdenum, tantalum or niobium. The liquid phase or surface film provides fast transport through the electrode while the insoluble refractory metal provides a structural matrix for the electrode during operation. A trilayer structure that is stable and not subject to deadhesion comprises a first, thin layer of tungsten, an intermediate co-deposited layer of tungsten-platinum and a thin surface layer of platinum.

Description: Energy is recovered from an insulated gate semiconductor switch, such as a MOSFET, that is otherwise lost in the gate capacitance by producing a notch in the gate control voltage for an interval B following an interval A after initial application of a gate control voltage pulse for turning the switch on, and a notch for an interval C following termination of the gate control voltage pulse followed by interval D during which the switch is turned on again, where each interval is a period .DELTA.T given by ##EQU1## L.sub.s is the inductance (discrete and/or parasitic) in series with the gate electrode of the insulated gate semiconductor switch, and C.sub.in is the capacitance of that switch between its gate and source electrodes. The interval .DELTA.T may be provided directly by timing in a pulse forming circuit for the gate control voltage applied, or adaptively by sensing the gate voltage v.sub.g and comparing it with fixed progressively higher voltages v.sub.1, v.sub.2 and v.sub.3, where v.sub.2 is intermediate v.sub.1 and v.sub.3 which correspond to the lower and upper levels of v.sub.g as the switch is turned off and on.

Description: A set of addressable test structures, each of which uses addressing schemes to access individual elements of the structure in a matrix, is used to test the quality of a wafer before integrated circuits produced thereon are diced, packaged and subjected to final testing. The electrical characteristic of each element is checked and compared to the electrical characteristic of all other like elements in the matrix. The effectiveness of the addressable test matrix is in readily analyzing the electrical characteristics of the test elements and in providing diagnostic information.

Description: At submillimeter wavelengths typical gap discontinuities in microstrip, CPW lines or at antenna terminals, which might contain diodes or active elements, cannot be viewed as simple quasi statically evaluated lumped elements. Planar Schottky diodes at 2.5 THz, for example, have a footprint that is comparable to a wavelength. Thus, apart from modelling the diodes themselves, the connection with their exciting elements (antennas or microstrip) gives rise to parasitics. Full wave or strictly numeric approaches can be used to account for these parasitics but at the expense of generality of the solution and the CPU time of the calculation. In this paper an equivalent network is derived that accurately accounts for large gap discontinuities (with respect to a wavelength) without suffering from the limitations of available numeric techniques.

Description: This paper will describe a robust test-bed that has been built to measure multiplier performance over a wide range of temperatures and frequencies. In a 182-212 GRz designed balanced doubler the peak efficiency at 201 GHz improves from 22% to 28% upon cooling from 300 K to 120 K. This stage is then used to pump a 362-424 GRz balanced planar doubler. The peak chain efficiency increases from 3.4% to 6% when the two cascaded doublers are cooled from 300 K to 120 K. This enables the production of 10 mW of peak output power at 377 GHz, which ought to be sufficient for driving the next stage multiplier.

Description: Varactor diode multipliers are a critical part of many THz measurement systems. The power and efficiencies of these devices limit the available power for THz sources. Varactor operation is determined by the physics of the varactor device and a careful doping profile design is needed to optimize the performance. Higher doped devices are limited by junction breakdown and lower doped structures are limited by current saturation. Higher doped structures typically have higher efficiencies and lower doped structures typically have higher powers at the same operating frequency and impedance level. However, the device material properties are also a function of the operating temperature. Recent experimental evidence has shown that the power output of a multiplier can be improved by cooling the device. We have used a particle Monte Carlo simulation to investigate the temperature dependent velocity vs. electric field in GaAs. This information was then included in a nonlinear device circuit simulator to predict multiplier performance for various temperatures and device designs. This paper will describe the results of this analysis of temperature dependent multiplier operation.

Description: The design and performance of a 0.9 THz to 2.7 THz waveguide tripler are presented. An unusual split block configuration with parallel input and output waveguides accommodates a monolithic membrane diode (MoMeD) circuit. Submicron planar GaAs Schottky diodes in single and antiparallel pairs are implemented with matching filters on a 3-micrometer thick suspended substrate as part of the MoMeD structure. The filters are a combination of short hammerheads and high-low impedance elements. Only a few circuit variations have been measured to date. The best current performance shows an output power of 0.1 microW and an efficiency of 0.002% at the band center frequency of 2.55 THz.

Description: Future submillimeter and far-infrared space telescopes will require large-format (many 1000's of elements) imaging detector arrays to perform state-of-the-art astronomical observations. A crucial issue related to a focal plane array is a readout scheme which is compatible with large numbers of cryogenically-cooled (typically 〈 1 K) detectors elements. When the number of elements becomes of the order of thousands, the physical layout for individual readout amplifiers becomes nearly impossible to realize for practical systems. Another important concern is the large number of wires leading to a 0.1-0.3 K platform. In the case of superconducting transition edge sensors (TES), a scheme for time-division multiplexing of SQUID read-out amplifiers has been recently demonstrated. In this scheme the number of SQUIDs is equal to the number (N) of the detectors, but only one SQUID is turned on at a time. The SQUIDs are connected in series in each column of the array, so the number of wires leading to the amplifiers can be reduced, but it is still of the order of N. Another approach uses a frequency domain multiplexing scheme of the bolometer array. The bolometers are biased with ac currents whose frequencies are individual for each element and are much higher than the bolometer bandwidth. The output signals are connected in series in a summing loop which is coupled to a single SQUID amplifier. The total number of channels depends on the ratio between the SQUID bandwidth and the bolometer bandwidth and can be at least 100 according to the authors. An important concern about this technique is a contribution of the out-of-band Johnson noise which multiplies by factor N(exp 1/2) for each frequency channel. We propose a novel solution for large format arrays based on the Hadamard transform coding technique which requires only one amplifier to read out the entire array of potentially many 1000's of elements and uses approximately 10 wires between the cold stage and room temperature electronics. This can significantly reduce the complexity of the readout circuits.

Description: We will present a Monolithic Millimeter-wave Integrated Circuit (MMIC) chip set which provides high output-power sources for driving diode frequency multipliers into the terahertz range. The chip set was fabricated at HRL Laboratories using a 0.1-micrometer gate-length InAlAs/InGaAs/InP high electron mobility transistor (HEMT) process, and features transistors with an f(sub max) above 600 GHz. The HRL InP HEMT process has already demonstrated amplifiers in the 60-200 GHz range. In this paper, these high frequency HEMTs form the basis for power sources up to 170 GHz. A number of state-of-the-art InP HEMT MMICs will be presented. These include voltage-controlled and fixed-tuned oscillators, power amplifiers, and an active doubler. We will first discuss an 80 GHz voltage-controlled oscillator with 5 GHz of tunability and at least 17 mW of output power, as well as a 120 GHz oscillator providing 7 mW of output power. In addition, we will present results of a power amplifier which covers the full WRIO waveguide band (75-110 GHz), and provides 40-50 mW of output power. Furthermore, we will present an active doubler at 164 GHz providing 8% bandwidth, 3 mW of output power, and an unprecedented 2 dB of conversion loss for an InP HEMT MMIC at this frequency. Finally, we will demonstrate a power amplifier to cover 140-170 GHz with 15-25 mW of output power and 8 dB gain. These components can form a power source in the 155-165 GHz range by cascading the 80 GHz oscillator, W-band power amplifier, 164 GHz active doubler and final 140-170 GHz power amplifier for a stable, compact local oscillator subsystem, which could be used for atmospheric science or astrophysics radiometers.

Description: Hot electron bolometer (HEB) mixer elements, based on niobium titanium nitride (NbTiN) thin film technology, have been fabricated on crystalline quartz substrates over a 20 nm thick AlN buffer layer. The film was patterned by optical lithography, yielding bolometer elements that measure about 1 micrometer long and between 2 and 12 micrometers wide. These mixer chips were mounted in a fixed-tuned waveguide mixer block, and tested in the 600 and 800 GHz frequency range. The 3-dB output bandwidth of these mixers was determined to be about 2.5 GHz and we measured a receiver noise temperature of 270 K at 630 GHz using an intermediate frequency of 1.5 GHz. The receiver has excellent amplitude stability and the noise temperature measurements are highly repeatable. An 800 GHz receiver incorporating one of these mixer chips has recently been installed at the Sub-Millimeter Telescope in Arizona for field test and for astronomical observations.

Description: The authors propose a new approach to THz power generation: the nanoklystron. Utilizing silicon micromachining techniques, the design and fabrication concept of a monolithic THz vacuum-tube reflex-klystron source is described. The nanoklystron employs a separately fabricated cathode structure composed of densely packed carbon nanotube field emitters and an add-in repeller. The nanotube cathode is expected to increase the current density, extend the cathode life and decrease the required oscillation voltage to values below 100 V. The excitation cavity is based on ridged-waveguide and differs from the conventional cylindrical re-entrant structures found in lower frequency klystrons. A quasi-static field analysis of the cavity and output coupling structure show excellent control of the quality factor and desired field distribution. Output power is expected to occur through an iris coupled matched rectangular waveguide and integrated pyramidal feed horn. The entire circuit is designed so as to be formed monolithically from two thermocompression bonded silicon wafers processed using deep reactive ion etching (DRIE) techniques. To expedite prototyping, a 600 GHz mechanically machined structure has been designed and is in fabrication. A complete numeric analysis of the nanoklystron circuit, including the electron beam dynamics has just gotten underway. Separate evaluation of the nanotube cathodes is also ongoing. The authors will describe the progress to date as well as plans for the immediate implementation and testing of nanoklystron prototypes at 640 and 1250 GHz.

Description: Frequency multipliers are required as local oscillator sources for frequencies up to 2.7 THz for FIRST and airborne applications. Multipliers at these frequencies have not previously been demonstrated, and the object of this work was to show whether such circuits are really practical. A practical circuit is one which not only performs as well as is required, but also can be replicated in a time that is feasible. As the frequency of circuits is increased, the difficulties in fabrication and assembly increase rapidly. Building all of the circuit on GaAs as a monolithic circuit is highly desirable to minimize the complexity of assembly, but at the highest frequencies, even a complete monolithic circuit is extremely small, and presents serious handling difficulty. This is compounded by the requirement for a very thin substrate. Assembly can become very difficult because of handling problems and critical placement. It is very desirable to make the chip big enough to that it can be seen without magnification, and strong enough that it may be picked up with tweezers. Machined blocks to house the chips present an additional challenge. Blocks with complex features are very expensive, and these also imply very critical assembly of the parts. It would be much better if the features in the block were as simple as possible and non-critical to the function of the chip. In particular, grounding and other electrical interfaces should be done in a manner that is highly reproducible.

Description: We present the development of a low noise superconductor insulator superconductor (SIS) mixer for the 1.1 - 1.25 THz heterodyne receiver of FIRST space radiotelescope. The quasi-optical SIS mixer has two NbTiN/AlN/Nb junctions with critical current density 30 kA/sq cm. The individual junction area is close to 0.65 square micrometers. The SIS junctions are coupled to the optical input beam through a planar double slot antenna and a Si hyperhemispherical lens. The minimum DSB receiver noise temperature is 650 K, about 12 hv/k.

Description: The Twelfth International Symposium on Space Terahertz Technology was held February 14-16, 2001 in San Diego, California, USA. This symposium was jointly sponsored by the National Aeronautics and Space Administration (NASA) and the Jet Propulsion Laboratory, California Institute of Technology. The symposium featured sixty nine presentations covering a wide variety of technical topics relevant to Terahertz Technology. The presentations can be divided into five broad technology areas: Hot Electron Bolometers, superconductor insulator superconductor (SIS) technology, local oscillator (LO) technology, Antennas and Measurements, and Direct Detectors. The symposium provides scientists, engineers, and researchers working in the terahertz technology and science fields to engineers their work and exchange ideas with colleagues.

Description: A reduction in the mixer noise is expected when using superconductors with a lower transition temperature (T(sub c)) since the thermal noise components of the mixer noise should scale with T(sub c). Also, the local oscillator (LO) power required for a diffusion-cooled device should decrease as T(sub c) when T(sub bath) 〈〈 T(sub c). We previously studied mixing in aluminum based hot-electron bolometers (HEBs) at microwave frequencies (approximately 30 GHz), and observed a significant improvement in noise performance, and a reduction in LO power as predicted. However, the bias voltage range over which good mixer performance was observed was approximately 5 - 10 microV. These devices are thus susceptible to saturation effects, in particular output saturation. In the present work, we have investigated Nb HEBs whose T(sub c) is lowered by applying a magnetic field. The goal is to study a case intermediate between Nb and Al, and hopefully to find properties that will allow use in practical receivers. A 15 kOe perpendicular magnetic field was applied to a Nb HEB (L = 0.16 micrometers, W = 0.08 micrometers, R(sub N) = 90 ohms) to reduce T(sub c) from 5.2 K to 2.4 K. The mixer noise, as inferred from the output noise and the conversion efficiency, decreased from 390 K, DSB to 171 K, DSB. The LO power required for near optimum mixer conversion efficiency (eta(sub mixer) = -9 dB in this device) was 8 nW in zero field, and approximately 2 nW when T(sub c) was reduced to 2.4 K. T(sub bath) = 0.22 K. The conversion bandwidth was previously measured to be 2.4 GHz and the same bandwidth was observed in the presence of a magnetic field. By lowering T(sub c), the voltage range over which good mixing was observed also decreased. However, even with T(sub c) reduced to 2.4 K, the conversion efficiency dropped by 3 dB from its maximum value only when the bias voltage was changed by approximately 90 microV. Saturation effects should thus be much less of a concern in these devices than in Al HEBS. In situations where the application of a large magnetic field is not feasible, we suggest using Ta based HEBS. Ta HEBs should have T(sub c) = 3 - 3.5 K and material properties very similar to Nb.

Description: A novel electric pulse-induced resistive change (EPIR) effect has been found in thin film colossal magnetoresistive (CMR) materials, and has shown promise for the development of resistive, nonvolatile memory. The EPIR effect is induced by the application of low voltage (〈 4 V) and short duration (〈 20 ns) electrical pulses across a thin film sample of a CMR material at room temperature and under no applied magnetic field. The pulse can directly either increase or decrease the resistance of the thin film sample depending on pulse polarity. The sample resistance change has been shown to be over two orders of magnitude, and is nonvolatile after pulsing. The sample resistance can also be changed through multiple levels - as many as 50 have been shown. Such a device can provide a way for the development of a new kind of nonvolatile multiple-valued memory with high density, fast write/read speed, low power-consumption, and potential high radiation-hardness.

Description: Two electrode configurations were tested in an electric-arc wind tunnel at the NASA Lewis Research Center. The results indicated approximately the same heat-loss rate per unit of arc power input for each of the configurations. Measured heat-loss rates were on the order of 40 percent of the arc power input. Nearly all this loss occurred at the anode. The power input and arc current limitations of the electrodes appear to be the critical design factors. Up to now, the maximum power to the stream has been 115 kilowatts with a cooled tungsten cathode and a cooled cylindrical anode incorporating a magnetic field. The maximum power input to this anode could not be established with the cooled tungsten cathode because cathode failures occurred at a gross power level of approximately 175 kilowatts. It was necessary to use a graphite cathode to seek the limitation of the anode. The results indicated that the anode limitation was primarily a function of arc current rather than power input. The anode was successfully operated at a power of 340 kilowatts at 1730 amperes; however, the anode failed with a power input of 324 kilowatts and a current of 2140 amperes. The magnetic flux density at the time of failure was 0.32 weber per square meter, or 3200 gauss. The graphite cathode was used only to establish the anode limitation; further investigation of graphite cathodes was discontinued because of the large amount of stream contamination associated with this type of electrode.