Publication Date:
2020
Description:
〈p〉Publication date: Available online 24 January 2020〈/p〉
〈p〉〈b〉Source:〈/b〉 Solid-State Electronics〈/p〉
〈p〉Author(s): Paul Clifton, Andreas Goebel, Matthias Kessler, Martin Majer, Karsten Knaeblein, Jan Hoentschel, Manish Hemkar, Schubert Chu, Steve Moffatt〈/p〉
〈div xml:lang="en"〉
〈h5〉Abstract〈/h5〉
〈div〉〈p〉We report for the first time the implementation of SiGe buried stressors in a foundry production process at 28 nm and the observation of an additional benefit of improved short channel behavior (reduced DIBL) that results in at least 15% improvement in Idlin-Ioff independent of any benefit obtained from tensile strain. For RF applications, f〈sub〉T〈/sub〉 is projected to improve by at least 40% in n-MOSFETs with SiGe buried stressor.〈/p〉〈/div〉
〈/div〉
Print ISSN:
0038-1101
Electronic ISSN:
1879-2405
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
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