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  • Articles  (61)
  • Articles: DFG German National Licenses  (61)
  • porous silicon  (61)
  • Springer  (61)
  • 2000-2004  (61)
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  • Articles  (61)
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  • Articles: DFG German National Licenses  (61)
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  • Springer  (61)
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  • 1
    Electronic Resource
    Electronic Resource
    Porosified Silicon Wafer Structures Impregnated With Platinum Anti-Tumor Compounds: Fabrication, Characterization, and Diffusion Studies (2000)
    Springer
    Biomedical microdevices 2 (2000), S. 265-272 
    Details
    ISSN: 1572-8781
    Keywords: porous silicon ; cis-platin ; drug delivery ; calcium phosphate ; carbo-platin
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine , Technology
    Notes: Abstract In this work, the incorporation and characterization of cis-platin (cis-diammine dichloroplatinum(II)), carbo-platin [cis-diammine(cyclobutane-1,1-dicarboxylato] platinum(II)), and Pt(en)Cl2 (ethylenediamminedichloro platinum(II)) within layers of calcium phosphate on porous Si/Si substrates are described. These materials have been characterized by scanning electron microscopy, secondary ion mass spectrometry, and X-ray energy dispersive spectroscopy. The diffusion of platinum species from the doped calcium phosphate layers has also been investigated by UV-visible absorption spectrometry and inductively-coupled plasma spectroscopy. The influence of initial platinum concentration, the impact of thermal annealing of the calcium phosphate/porous Si/Si matrix, as well as the effect of varying the ligand coordination sphere of the Pt complex on its ability to be delivered to the surroundings have also been analyzed. For the case of cis-platin, it is found that increasing the concentration of platinum complex in the electrolyte during cathodic growth of calcium phosphate results in a relatively greater concentration of Pt incorporated into the calcium phosphate layers and a larger amount of Pt which subsequently can be delivered to the surrounding medium upon exposure to solvent.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009951121205
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical Characterisation of Photovoltaic Porous Si (2000)
    Springer
    Journal of porous materials 7 (2000), S. 295-298 
    Details
    ISSN: 1573-4854
    Keywords: porous silicon ; photo-voltage ; d.c. conductivity
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract In this study n-type and p-type PV devices have been fabricated by anodising Si wafers with various resistivities in aqueous ethanoic HF solution followed by deposition of semitransparent contacts. semitransparent deposition onto the porous layers. Various methods have been used for the optimisation of problematic contact to nanoporous layers. The measurements of importance are current-voltage (I-V) characteristics, the photovoltaic (PV) decay time spectrum, and the PV response as a function of excitation energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009600619044
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  • 3
    Electronic Resource
    Electronic Resource
    Laser Induced Degradation of Photoluminescence Intensity of Porous Silicon (2000)
    Springer
    Journal of porous materials 7 (2000), S. 307-310 
    Details
    ISSN: 1573-4854
    Keywords: porous silicon ; photoluminescence ; degradation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The evolution, under vacuum, of the photoluminescence (PL) intensity of porous silicon (PS) has been studied as function of anodisation conditions, laser line and post-anodisation treatments. It was shown that the degradation of the PL intensity depends on the internal structure of PS. In particular, the degradation is important for PS layers formed essentially by crystallites having small size or where amorphous phase exists. The experimental results have been interpreted using a theoretical model, which takes into account the variation with time of the local concentration of the luminescent centers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009613004932
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  • 4
    Electronic Resource
    Electronic Resource
    Stress Measurement Technique to Monitor Porous Silicon Processing (2000)
    Springer
    Journal of porous materials 7 (2000), S. 319-321 
    Details
    ISSN: 1573-4854
    Keywords: porous silicon ; stress measurements ; thermal annealing
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Macroscopic stress measurements are used to monitor Porous Silicon processing. Silicon wafer of 1Ω cm resistivity, n-type and 〈1 0 0〉 orientation were used as starting material. Porous Silicon layers with a porosity of 57% and a thickness of 85 μm, fabricated by electrochemical anodisation, were differently dried, then the evolution of the wafer deflection has been followed with storage time in air. Thermal treatments both in inert and oxidant atmosphere have been performed up to 1000°C. The stress behaviour vs. temperature allows to estimate the hydrogen desorption activation energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009621206749
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  • 5
    Electronic Resource
    Electronic Resource
    Superlattices as Characterisation Tool for the Beginning of PS Formation (2000)
    Springer
    Journal of porous materials 7 (2000), S. 373-376 
    Details
    ISSN: 1573-4854
    Keywords: porous silicon ; superlattices ; oxidation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Initial stage of porous silicon (PS) formation has been studied in an original way. Multilayer structures constituting of very thin layers of low porosity and thick layers of high porosity have been fabricated and characterised by optical tools and electron microscopy. The non linear behaviour resulting in a change in the dissolution velocity has been quantified by using a stack layer structure. Finally using thermal oxidation it has been shown that, due to the selective oxidation as a function of the porosity, porous silicon can be used to produce a Si/SiO2 like structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009618517652
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  • 6
    Electronic Resource
    Electronic Resource
    Laplacian Growth Models for Porous Silicon Formation—Stability Analysis (2000)
    Springer
    Journal of porous materials 7 (2000), S. 345-348 
    Details
    ISSN: 1573-4854
    Keywords: porous silicon ; interface growth ; Laplacian growth ; linear stability analysis
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract We develop a Laplacian model of interface growth which includes basic features of the anodisation of silicon in hydrofluoric acid. Our aim is to find mechanisms for the characteristic properties of porous silicon formation, such as the transition from electropolishing to pore formation and the typical pore distance. The local etching rate of the interface between the semiconductor and the electrolyte is determined by the local current density. We model the diffusive transport of charge carriers in the semiconductor and of reactants in the electrolyte including the basic features of the electrochemical reaction at the interface. A linear stability analysis of a flat and planar interface is performed in order to study the initial state of pore formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009630920378
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  • 7
    Electronic Resource
    Electronic Resource
    Orientation Effect of the Wafer on the Structural Properties of P+ Type Porous Silicon Layers (2000)
    Springer
    Journal of porous materials 7 (2000), S. 357-361 
    Details
    ISSN: 1573-4854
    Keywords: porous silicon ; X-ray diffraction ; differential scanning calorimetry
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The structural properties of (111) oriented p+ type Porous Silicon (PS) samples are investigated using various X-ray diffraction techniques and compared to (001) p+ type PS layer structure. High resolution X-ray diffractometry was used to record rocking curves and reciprocal space maps, giving indications about the crystalline quality of the PS samples as well as about the pore orientation. X-ray diffraction and reflectivity performed on thin PS layers allow to estimate the layer thickness, porosity and roughness of the PS/substrate interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009691122195
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  • 8
    Electronic Resource
    Electronic Resource
    AC Conductivity of Porous Silicon from Monte Carlo Simulations (2000)
    Springer
    Journal of porous materials 7 (2000), S. 107-110 
    Details
    ISSN: 1573-4854
    Keywords: porous silicon ; conductivity ; percolation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The AC conductivity of a percolation model with local energetical disorder for porous Silicon in three dimensions, σ(ω), is studied by Monte Carlo simulations. The model includes both diffusion and recombination processes and σ(ω) is obtained by a Fourier transform of the mean-square displacement of the carriers, where hopping diffusion of a single type of carrier (either an electron or an exciton) and two types of carriers (an electron and a hole) are considered. It is found that at low temperatures, the behavior of σ(ω) depends sensitively on the type of carrier considered.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009678502689
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  • 9
    Electronic Resource
    Electronic Resource
    Porous Semiconductor Micropatterns Formed on Focussed Ion Beam Implants (2000)
    Springer
    Journal of porous materials 7 (2000), S. 233-237 
    Details
    ISSN: 1573-4854
    Keywords: porous silicon ; integrated optics ; wave guides
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract In this work we report a principle that allows one to write visible light emitting silicon patterns of arbitrary shape down to the sub-micrometer scale. We demonstrate that porous Si growth can electrochemically be initiated preferentially at surface defects created in an n-type Si substrate by Si++ ion bombardment. Using a focused ion beam (FIB) as a source of ions, arbitrary defect patterns can be written into a substrate. The growth of light emitting porous silicon is then selectively achieved by an electrochemical treatment which triggers Si dissolution only at these defect sites. The selectivity of the electrochemical dissolution reaction can be attributed to a facilitated Schottky barrier breakdown at the implanted surface defects which leads to the desired pore formation in confined surface areas.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009655324979
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  • 10
    Electronic Resource
    Electronic Resource
    Electroluminescence from Porous Silicon Studied Experimentally (2000)
    Springer
    Journal of porous materials 7 (2000), S. 267-270 
    Details
    ISSN: 1573-4854
    Keywords: porous silicon ; photoluminescence ; electroluminescence ; band structure ; experimental
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Electroluminescence, photoluminescence, and current-voltage measurements have been carried out on a series of samples consisting of porous silicon on top of crystalline silicon. The electroluminescence spectral distributions are markedly shifted towards long wavelengths in comparison to those seen with photoluminescence. The results are discussed and explained in terms of the energy-band structure of porous silicon. The problem of injecting electrons as well as holes into the porous silicon layer is pointed out and discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009675829522
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