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  • 78.65J  (1)
  • Calcium displacement  (1)
  • Springer  (2)
  • 2010-2014
  • 1990-1994  (2)
  • 1920-1924
  • 1905-1909
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Verlag/Herausgeber
  • Springer  (2)
Erscheinungszeitraum
  • 2010-2014
  • 1990-1994  (2)
  • 1920-1924
  • 1905-1909
Jahr
  • 1
    Digitale Medien
    Digitale Medien
    Springer
    Planta 192 (1993), S. 104-109 
    ISSN: 1432-2048
    Schlagwort(e): Aluminum toxicity ; Calcium displacement ; Electrical potential ; Root ; Triticum
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Biologie
    Notizen: Abstract Several mineral rhizotoxicities, including those induced by Al3+, H+, and Na+, can be relieved by elevated Ca2+ in the rooting medium. This leads to the hypothesis that the toxic cations displace Ca2+ from transport channels or surface ligands that must be occupied by Ca2+ in order for root elongation to occur. In this study with wheat (Triticum aestivum L.) seedlings, we have determined, in the case of Al3+, that (i) Ca2+, Mg2+, and Sr2+ are equally ameliorative, (ii) that root elongation does not increase as Ca2+ replaces Mg2+ or Sr2+ in the rooting media, and (iii) that rhizotoxicity is a function solely of Al3+ activity at the root-cell membrane surface as computed by a Gouy-Chapman-Stern model. The rhizotoxicity was indifferent to the computed membrane-surface Ca2+ activity. The rhizotoxicity induced by high levels of tris(ethylenediamine)cobaltic ion (TEC3+), in contrast to Al3+, was specifically relieved by Ca2+ at the membrane surface. The rhizotoxicity induced by H+ exhibited a weak specific response to Ca2+ at the membrane surface. We conclude that the Ca2+-displacement hypothesis fails in the case of Al3+ rhizotoxicity and that amelioration by cations (including monovalent cations) occurs because of decreased membrane-surface negativity and the consequent decrease in the membrane-surface activity of Al3+. However, TEC3+, but not Al3+, may be toxic because it inhibits Ca2+ uptake. The nature of the specific H+-Ca2+ interaction is uncertain.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 54 (1992), S. 293-299 
    ISSN: 1432-0630
    Schlagwort(e): 68.55 ; 73.60F ; 78.65J ; 81.15E
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Stoichiometric polycrystalline In2Se3 thin films have been grown by elemental evaporation on both glass and quartz substrates. The compositions are examined by DAN fluorimetry and X-ray photoelectron spectroscopy (XPS). Structure of the films are characterized by X-ray diffraction. The structure of this α-form of thin films have been determined to be hexagonal. Optimization of the preparative conditions employed for elemental evaporation, helped in preparing monophasic films by the suppression of other phases to a very minor extent. Influence of annealing conditions on the stoichiometry of the films are investigated in detail.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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