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  • 1
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The x-ray beams for the next generation of synchrotrons will contain much more power (1–10 kW) than is available at present day facilities. Cooling the first optical components in these beam lines will require the best cooling technology that one can bring to bear. Argonne continues to pioneer the use of liquid metals as the cooling fluid and has adopted liquid gallium as the liquid metal of choice. Its low melting point, 29.7 °C and its very low vapor pressure make it an easy fluid to handle and its high thermal conductivity and heat capacity make it an excellent cooling fluid. A series of experiments were performed during April 1991 with the wiggler beam at the F2 station of the CHESS facility at Cornell to investigate the cooling of large areas of high power. Two types of cooling crystal geometries were tested, one where the cooling channels were core-drilled just below the surface of the crystal and a second where slots were cut into the crystal just below the surface with a diamond saw. Both crystals performed well with beam powers up to 1050 W and power densities of up to 14.5 W/mm2 at normal incidence.An infrared camera was used to measure the variation in the temperature of the top layer of the silicon crystals. For the core-drilled crystal the peak temperature measured at the center of the beam at a power density of 12.3 W/mm2 was 15 °C hotter than the crystal surface outside of the beam with a flow of liquid gallium of 2 gpm (gallons per minute) and was 10 °C with a flow of 4 gpm. The maximum distortion of the crystal surface distortion of the core drilled crystal was about ±2.0 arcsec for the 2 gpm case with a maximum power density of 10.9 W/mm2 and about 5% of the expected beam intensity was lost at peak power of 14.5 W/mm2. For the slotted crystal the peak temperature difference for a peak power of 10.9 W/mm2 was 3.5 and 2.0 °C for liquid gallium flows of 1 and 2 gpm, respectively. No intensity loss was measured for the maximum power density of 14.5 W/mm2. The fact that the peak temperature differences on the surface of both crystals was decreasing with increased flow of liquid gallium suggests that even higher power densities can be accommodated with higher flows of liquid gallium. This work is supported by the Department of Energy, BES-Materials Sciences, under Contract W-31-109-Eng-38.
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  • 2
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A spectrometer designed for use as an undulator source and having targeted resolutions of 0.01 eV in one mode of use and 0.2 eV in another will operate at the APS. We report here on analyzers that we have constructed for use on this spectrometer for 0.2 eV resolution. We have tested them at NSLS beamline X21 using focused wiggler radiation and at the Cornell high energy synchrotron source (CHESS) using radiation from the CHESS-ANL undulator. Analyzers were constructed by gluing and pressing 90-mm-diam, (111) oriented Ge wafers into concave glass forms having a radius near 1 m. An overall inelastic scattering resolution of 0.3 eV using the (444) reflection was demonstrated at CHESS. Recent results at X21 revealed a useful diameter of 74 mm at an 87° Bragg angle. © 1995 American Institute of Physics.
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  • 3
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The high-order backscattering reflections from single crystals of silicon have mrad rocking curve widths that can be exploited to produce meV energy-resolution focusing analyzer crystals for use in inelastic x-ray scattering experiments at third-generation synchrotron sources. The first generation of these analyzers has been limited in efficiency principally by slope and/or figure errors. We calculate the effect of slope errors on the theoretical energy resolution and focus spot size of a typical analyzer design using a ray-tracing code to ensure that there are no unforeseen contributions to the energy resolution and efficiency. We also present measurements of the slope errors of the atomic planes for a prototype, spherically bent, strain-relief grooved analyzer as proof that it is in principle possible to obtain the slope and figure error limits required for a high efficiency meV resolution backscattering crystal. © 1995 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 3109-3112 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have commissioned a new instrument for high resolution inelastic x-ray scattering on the inelastic scattering beamline of the Synchrotron Radiation Instrumentation Collaborative Access Team on sector 3 of the Advanced Photon Source. So far, the instrument is set up at 13.84 keV with a total energy resolution of 7.5 meV and a momentum resolution of ≤0.1 Å−1. We present technical details of the instrument, which includes an in-line monochromator, a focusing mirror, and a focusing analyzer. The performance of the instrument was demonstrated in studies of phonons in diamond and chromium. © 1998 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 443-445 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Satellite peaks analogous to superlattice peaks have been observed for both corrugated InP substrates and for such substrates overgrown with epitaxial InGaAsP. These satellites are entirely due to the corrugations. High-resolution x-ray diffraction using extremely asymmetric reflections in the glancing exit configuration was used. A kinematical expression for the intensities of the satellite peaks is derived for strain-free structures.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2042-2043 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The width of an x-ray diffraction peak is a sensitive function of the angle of incidence when the angle of incidence is less than 1°. Measurements of x-ray diffraction peak widths taken at a glancing angle of incidence can be interpreted to yield information on miscut angles of crystal surfaces relative to major crystal planes. Miscut angles of a few arcminutes can be measured. A high-resolution multiple crystal x-ray diffractometer is necessary to achieve the accuracy of peak width measurement required. The technique is applicable to any crystal. As an example, we discuss the case of a (100) InP surface measured using the highly asymmetric (311) diffraction.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1985-1986 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Double-crystal rocking curves for an InP/InGaAsP/InP double heterostructure grown by hydride vapor phase epitaxy have been obtained which reveal fringes corresponding to both the top InP layer and to the buried InGaAsP layer thickness. Fourier transform spectra of the rocking curves are shown to be very useful in extracting the thicknesses. We believe this to be the first report of a measurement of the thickness of a buried layer using only x-ray fringe spacings.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1364-1368 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Computer simulations of the intrinsic (400) reflecting power of In1−xGaxAs layers having graded compositions are presented. We find that multiple x-ray peaks can result from a linearly graded region which implies that an interpretation which ascribes individual peaks to sublayers having a constant lattice parameter may not always be correct. We find that, in general, the simulations are asymmetric and that they have a full width at half maximum less than ∼100 arcsec. We have simulated an actual rocking curve of a single In1−xGaxAs1−yPy layer grown on a (100) InP substrate by vapor-phase epitaxy which exhibited multiple peaks, and we find that a good fit is possible if the layer had a graded lattice parameter. Comparing dynamical to kinematical simulations for a 3-μm-thick linearly graded layer, we find that most of the features resulting from the grading can be explained using kinematical theory. However, only the dynamical simulations can properly account for the reflecting power in the vicinity of the substrate peak and for the lack of fine structure which is observed in the absence of a discontinuity in Bragg spacing at the layer/substrate interface.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1238-1238 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 442-446 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rocking curves of a 0.78-μm layer grown on a 3.35° off-(100) substrate by the hydride process have been compared to detailed calculations using x-ray dynamical diffraction theory. The observed linewidth and peak convoluted reflecting power of the (400) reflection are 32 arc s and 12.4% as compared to calculated values of 26.6 arc s and 17.4%. We used a symmetric (100) InP first crystal, and the calculations were made for this exact geometry. Anomalous dispersion was not neglected. We report the observation of Bragg geometry Pendellosung fringes for this InGaAs layer. As many as six fringes having a separation of 26 arc s were found to be clearly visible. This spacing was fit to obtain the layer thickness. We conclude that, so far as we are aware, our material is the best, as judged from an x-ray point of view, ever reported for the vapor-phase epitaxy process.
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