Publication Date:
2012-08-24
Description:
Author(s): G. Callsen, M. R. Wagner, T. Kure, J. S. Reparaz, M. Bügler, J. Brunnmeier, C. Nenstiel, A. Hoffmann, M. Hoffmann, J. Tweedie, Z. Bryan, S. Aygun, R. Kirste, R. Collazo, and Z. Sitar Mg doping of high quality, metal organic chemical vapor deposition grown GaN films results in distinct traces in their photoluminescence and photoluminescence excitation spectra. We analyze GaN:Mg grown on sapphire substrates and identify two Mg related acceptor states, one additional acceptor state... [Phys. Rev. B 86, 075207] Published Thu Aug 23, 2012
Keywords:
Semiconductors I: bulk
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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