ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Results of a 1200V 4H-SiC vertical DMOSFET based on ion implanted n+ source and pwellregions are reported. The implanted regions are activated by way of a high temperature anneal(1675ºC for 30 min) during which the SiC surface is protected by a layer of graphite. Atomic forcemicroscopy shows the graphite to effectively prevent surface roughening that otherwise occurswhen no capping layer is used. MOSFETs are demonstrated using the graphite capped annealprocess with a gate oxide grown in N2O and show specific on-resistance of 64 mW×cm2, blockingvoltage of up to 1600V and leakage current of 0.5–3 ´10-6 A/cm2 at 1200V. The effective nchannelmobility was found to be 1.5 cm2/V×s at room temperature and increases as temperatureincreases (2.8 cm2/V×s at 200ºC)
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1265.pdf
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