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  • 1
    Publication Date: 2014-10-14
    Description: Time-resolved soft X-ray photoelectron spectroscopy (PES) experiments were performed with time scales from picoseconds to nanoseconds to trace relaxation of surface photovoltage on the ZnO(0001) single crystal surface in real time . The band diagram of the surface has been obtained numerically using PES data, showing a depletion layer which extends to 1  μ m. Temporal evolution of the photovoltage effect is well explained by a recombination process of a thermionic model, giving the photoexcited carrier lifetime of about 1 ps at the surface under the flat band condition. This lifetime agrees with a temporal range reported by the previous time-resolved optical experiments.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1704-1707 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gas source molecular beam epitaxy growth of TlInP (thallium indium phosphide) on (100) InP substrate is described. TlInP is an important constituent material of newly proposed novel infrared optical device material, TlInGaP, which can be lattice-matched to InP. Reflection high-energy electron diffraction reveals the (2×2), (2×4), and (4×2) streak patterns corresponding to the P-excess, P-stabilized and group-III rich surfaces, respectively. However, facet pattern emerges in the low temperature (380 °C) growth. This pattern is consistent with the scanning electron microscopy image; hatched pattern along the [011] direction, which is caused by insufficient migration of group III adatoms on the surface. Double crystal x-ray diffraction rocking curves for TlP on InP and TlInP on InP samples clearly show the peak from TlP and TlInP as well as that from InP substrate. The peak position is changed with Tl/In flux ratio. Photoluminescence emission is observed for TlInP grown on InP. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1159-1164 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of silicon wafer surface orientation on very thin oxide quality were studied, testing Si(100) and (111) wafers. It has been found that the very thin oxide quality is determined by the silicon wafer surface orientation, and that when Si(111) is oxidized, SiO2/Si(111) interface microroughness increases as oxide becomes thicker than 10 nm, resulting in a degradation of oxide films quality on Si(111). When oxide thickness is decreased less than 10 nm, Si/SiO2 interface smoothness is maintained similar for Si(100) and (111) but SiO2/Si interface for Si(111) exhibits larger interface charges and larger threshold-voltage shift due to hot-electron injection than that for Si(100). © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7189-7201 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The kinetics of oxidation in YBa2Cu3O7−x thin films in the presence of molecular and atomic oxygen ambients have been studied. The resistivity of c-axis-, a-axis-, and mixed a+c-axis-oriented films, deposited in situ by off-axis magnetron sputtering, was measured as a function of time subsequent to a change in the ambient conditions. Atomic oxygen was produced by a well-characterized, compact electron cyclotron resonance source that is compatible with molecular-beam epitaxy deposition. The resistivity of a film in the presence of atomic oxygen is shown to be determined by the flux of atomic oxygen on the film surface. The activation energy for the decomposition of O2 on the surface of the film was determined to be ∼1.3 and ∼2.1 eV for mixed a+c-axis- and c-axis-oriented films, respectively. The oxidation process is shown to be thermally activated and can be characterized by a diffusion model with an activation energy which varies from approximately 1.2 eV in the presence of molecular oxygen to 0.6 eV for a flux of 2×1015 oxygen atoms/cm2 s. In both cases, diffusivity is found to be insensitive to oxygen stoichiometry, but the rate of oxidation is found to be sensitive to the microstructure and orientation of the films. The lower activation energy observed for the atomic oxygen case is postulated to be due to the large oxygen concentration gradient present during the oxidation.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6663-6668 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The characteristics of proton-exchanged LiNbO3 waveguides fabricated using pyrophosphoric acid process are reported. Using this process, high index change waveguides with step profile have been realized. Low-loss (0.7 dB/cm) channel waveguides have been also obtained by pyrophosphoric acid process. The loss is much lower than that given by conventional benzoic acid process. We show that the reason for low-loss waveguide fabrication is due to the uniform proton-exchange formed by this process, compared with the benzoic acid process.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3653-3662 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrathin YBa2Cu3O7−δ epitaxial films were successfully grown in situ on (001) SrTiO3 and MgO substrates by means of ozone-incorporating activated reactive evaporation. The x-ray-diffraction study was carefully examined to determine the structural properties of the grown films. Excellent crystallinity with no interfacial disorders was revealed by the appearance of the Laue oscillations. It was found that in a well lattice-matched YBa2Cu3O7−δ/SrTiO3 system, the crystallinity was deteriorated due to defect introduction at the critical layer thickness hc ( ∼ 130 A(ring)). Interestingly, also in a poorly lattice-matched YBa2Cu3O7−δ/MgO system, excellent crystallinity was revealed even at above hc ( 〈 24 A(ring)). This implies that an anomalous misfit relaxation process exists in the YBa2Cu3O7−δ/MgO system. In such a system, no crystal imperfection of the MgO substrate caused by defect introduction was elucidated by the grazing incidence x-ray scattering, which indicated that the MgO substrate did not contribute to the anomalous misfit relaxation. The anomalous growth manner was also found in YBa2Cu3O7−δ/MgO according to surface morphology investigations. Below 40 A(ring)( (approximately-greater-than) hc), island nucleation growth was found. Above 40 A(ring), it was observed that an atomically smooth surface was obtained and the crystallinity was simultaneously improved. It is suggested that YBa2Cu3O7−δ possesses an anomalous misfit relaxation mechanism, and that especially in the growth on MgO, it couples with the characteristic growth behavior at the initial stage.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 958-960 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The velocity distribution function of the gas effusing from a 5.5-cm-diam, 5-cm-long small ion source was measured by the mass separated time-of-flight method. The measured distribution function could be fitted to a Maxwellian distribution before the commencement of a discharge, when the deuterium pressure in the ion source was below 0.6 Pa. The effect of discharge upon the distribution function of neutral deuterium below this operating pressure was investigated by changing the arc power. The deuterium gas temperature determined by fitting the measured distribution function to a Maxwellian showed a maximum gas temperature of 800 K at discharge power density of 6 W/cm3. Effects of discharge upon argon and helium gas temperature were also measured, which showed a monotonic increase against the discharge power. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 4 (1992), S. 457-459 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is found that the well-known "refined similarity hypothesis,'' proposed by Kolmogorov and Obukhov in 1962, fails in a typical direct numerical simulation of three-dimensional turbulence: If r is an inertial-range scale, the velocity difference across a domain of linear dimension r is almost statistically independent of the average dissipation within the domain. This result casts doubt on the often-used relation, ζp = p/3 − μp/3, between scaling indices ζp for velocity structure functions and scaling indices μq for moments of locally averaged dissipation. It seems questionable that a single turbulence model can predict both sets of exponents successfully. Other aspects of the treatment of intermittency in isotropic turbulence may also need reconsideration.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 2988-2990 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A diamond anvil cell made of stabilized zirconia ceramic for high-pressure experiments under a pulsed high magnetic field is described. As an application, the magneto-optical spectra of ruby have been obtained at 77 K up to 7 GPa and 33 T, showing the Zeeman splitting of the fluorescent lines, R1 and R2.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 677-679 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting Nd-Ce-Cu-O thin films were epitaxially grown on SrTiO3 (100) by activated reactive evaporation. As-grown films showed the metallic temperature dependence of the resistivity and superconducting transition at 12.5 K (R=0). The remarkable parallel shift of the onset temperature of the resistive transition in the magnetic fields was observed. Ginzburg–Landau coherence lengths along the c axis and in the basal plane are 7 and 96 A(ring), respectively.
    Type of Medium: Electronic Resource
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