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  • 1
    Digitale Medien
    Digitale Medien
    Comparative study of atomic ordering and alloy clustering in InGaP crystals grown by metalorganic vapor phase epitaxy, chloride-vapor phase epitaxy, and liquid phase epitaxy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4268-4271 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We describe the results of the transmission electron microscope study of ordered and modulated structures in InGaP alloy semiconductors grown on (001) GaAs substrates by metalorganic vapor phase epitaxy, chloride-vapor phase epitaxy, and liquid phase epitaxy. Strong ordering of CuPt-type has been observed in InGaP grown by metalorganic vapor phase epitaxy at 630 °C, which is associated with an abnormality in the photoluminescence peak energy. CuPt-type ordered structures have also been observed in crystals grown by chloride-vapor phase epitaxy, but the degree of ordering is weaker and crystals grown at 576–740 °C exhibit normal photoluminescence peak energies. On the other hand, in crystals grown by liquid phase epitaxy, no ordered structure is found and the crystals exhibit normal photoluminescence peak energies. There is no dependence of modulated structures on the growth method since they are observed in all crystals. These results also lead us the previous conclusion by Kondow and co-workers that the ordered structures are not generated under thermal equilibrium conditions but rather by the diffusion and reconstruction of deposited atoms on the growth surface.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.346218
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  • 2
    Digitale Medien
    Digitale Medien
    Arrangement of atoms and strain distribution in CdSe/ZnSe strained single quantum well on vicinal GaAs substrate (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 154-159 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Strain distribution in a ZnSe/CdSe/ZnSe strained single quantum well structure grown on a vicinal GaAs substrate is investigated by calculating the positions of all the atoms in the structure. The strain distribution around atomic step edges is inhomogeneous, while that in terrace regions is the same as that of quantum wells grown on just-oriented substrates. The inhomogeneity extends for only 2 or 3 ML along the vicinal direction from the step edge. Microscopic lattice-planetilting of CdSe and ZnSe epitaxial layers becomes the largest at the step edge. CdSe expands and ZnSe shrinks in the growth plane at the lateral interface of CdSe and ZnSe to minimize the total strain energy. Cd atoms at the step edge have the largest strain energy due to shear deformation. Conduction and valence band potential profiles calculated by using the strain distribution and deformation potentials are found to enhance carrier confinement into the terrace region of the quantum well, although the confinement effect is not enough to explain the experimentally observed blueshift in photoluminescence. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1329349
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  • 3
    Digitale Medien
    Digitale Medien
    Development and properties of a Freeman-type hybrid ion source : The 8th international conference on ion sources (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 1168-1170 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: In order to investigate the fundamentals of the deposition of ions with energies in the range of 10–100 eV, we developed Freeman-type hybrid ion source and a low-energy mass-analyzed ion beam deposition system. Analyzing the energy distributions of ions generated, we estimated the properties of the ion source. Energy distributions of noble gas ions (Ne+, Ar+, Kr+, Xe+), and metal ions (Ti+, Fe+, W+, C+) were measured by a PPM421 plasma process monitor with a cylindrical mirror analyzer and a quadrupole mass spectrometer. For instance, Ar+ ions transported at 25 keV were decelerated to 103 eV with an energy spread of ±3 eV, and Ti+ ions generated by sputtering of a titanium target had an energy distribution of 107±3 eV. The energy of ions generated by this apparatus was well defined, and so it is possible to investigate film formation processes by low-energy ions. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1150417
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  • 4
    Digitale Medien
    Digitale Medien
    Compact low-pass electrical filters for cryogenic detectors (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 2638-2640 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: We describe the design and performance of compact, low-pass electrical filters, suitable for operation at cryogenic temperatures. The filters are two pole LC filters with a cutoff at ≈100 kHz, an attenuation of −24 dB/octave, and a stop band rejection of −80 dB between 5 and 20 MHz. Their function is to suppress rf voltage noise to sensitive cryogenic detectors. The low-pass filters are realized using surface mounted devices on thin PC boards which can be stacked for maximum packing density. Compact modules containing 14 and 35 filters have been developed and installed in the Infrared Telescope in Space. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1145601
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  • 5
    Digitale Medien
    Digitale Medien
    Hydrogen effusion from hydrogenated amorphous silicon caused by the deposition of a silicon nitride overlayer (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 39-41 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effect of silicon nitride (SiN) deposition on hydrogenated amorphous silicon (a-Si:H) has been investigated to find the origin of the difference of a-Si:H/SiN interface properties caused by the order of deposition. Sheet conductance of the on-state in inverted staggered (a-Si:H on SiN) thin-film transistors (TFTs) increases gradually with the substrate temperature (Tsub) of SiN, but decreases rapidly with the Tsub of SiN in staggered TFTs (SiN on a-Si:H). Photoluminescence experiments indicated that the degradation in staggered TFTs was due to the creation of defects in a-Si:H by the deposition of the SiN overlayer. It was shown by Fourier transform infrared attenuated total reflection that the origin of the defects was hydrogen effusion from a-Si:H.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.104430
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  • 6
    Digitale Medien
    Digitale Medien
    Threshold voltage shift of amorphous silicon thin-film transistors by step doping (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 606-607 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The threshold voltage (VT) shift of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) by boron doping has been investigated. In TFTs with a uniformly doped structure (SiN/B-doped a-Si:H), VT shifts to a positive voltage by boron doping, while the field-effect mobility decreases markedly. By using a step-doped structure (SiN/undoped a-Si:H/B-doped a-Si:H), the degradation of the field-effect mobility by boron doping becomes less than that of a uniformly doped TFT with the same VT shift, and a VT shift of 3.5 V was obtained without degradation of the field-effect mobility.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.100892
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  • 7
    Digitale Medien
    Digitale Medien
    Crystallization at initial stage of low-temperature polycrystalline silicon growth using ZnS buffer layer with 〈111〉 preferred orientation (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1549-1551 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We developed a low-temperature growth technique for polycrystalline silicon (poly-Si). When Si is deposited on glass substrates at 450 °C, it crystallizes as thickness increases, but 10-nm-thick layers of Si are mainly amorphous. Use of a ZnS buffer layer with 〈111〉 preferred orientation facilities crystallization of Si during the initial growth stages. The preferred orientation of poly-Si on glass substrates is 〈110〉, while that of poly-Si on the ZnS buffer layer is 〈111〉. This is probably due to local epitaxial growth on polycrystalline ZnS grains with 〈111〉 preferred orientation. Raman spectroscopy showed that the ZnS buffer layer significantly improved the crystallinity of 25-nm-thick Si layers.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.112940
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  • 8
    Digitale Medien
    Digitale Medien
    Transport study of self-supporting porous silicon (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1098-1100 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have measured dark DC conductivity and time-of-flight (TOF) of carriers in self-supporting porous silicon films in the temperature range 298–480 K. The dark I-V curves show superlinear behavior with activation energies of 0.38–0.67 eV. The TOF measurements allowed us to evaluate the drift-length of non-equilibrium carriers and revealed a significant decrease of the collected charge with increasing delay (tdel≥1 ms) of the exciting 3 ns laser pulse after the voltage application, probably due to field redistribution in the Si crystallites. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.113584
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  • 9
    Digitale Medien
    Digitale Medien
    Fabrication of multiperiod Si/SiO2/Ge layered structure through chemical bond manipulation (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3169-3171 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this letter, we report a method called chemical bond manipulation for fabrication of multiperiod nanometer sized Si/SiO2/Ge layered structure. Chemical bond manipulation is a self-organization process which involves selective breaking and making of surface chemical bonds and thereby enable formation of the desired species on a full wafer scale. We show that oxygen of germanium oxide layer formed on Si(111) are picked up by the Si atoms arriving at the surface during subsequent growth. This phenomenon involves breaking of Ge–O bonds and making of Si–O bonds and leads to the formation of ultrathin Si and Ge layers sandwiched between ultrathin silicon oxide layers, preserving the original wafer morphology. This material exhibits blue-green light emission at room temperature when excited by ultraviolet laser. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.121582
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  • 10
    Digitale Medien
    Digitale Medien
    Solubility of Portland Cement in Weathering Agents. (1924)
    s.l. : American Chemical Society
    Industrial & engineering chemistry 16 (1924), S. 1063-1066 
    Details
    ISSN: 1520-5045
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie , Werkstoffwissenschaften, Fertigungsverfahren, Fertigung
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/ie50178a028
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