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  • 1
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 2720-2725 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: Time-of-flight scattering and recoiling spectrometry (TOF-SARS) was used to investigate the scattered and recoiled ion fractions from 3 keV Ar+ ion beams on LiTaO3(100) single crystals. The TOF-SARS measurements were found to be sensitive to the electrical properties of the crystal. ac impedance measurements of the electrical conductivity showed that LiTaO3 is an insulator at room temperature and that its conductivity increases by ∼103 at temperatures in the range 100–200 °C. This increase in conductivity could be monitored in TOF-SARS by measuring the current through the crystal induced by the impinging Ar+ ions as a function of temperature. The activation energy for this transition was estimated from both the impedance and scattering measurements to be ∼1 eV. Azimuthal anisotropy of the scattered Ar+ ions from Ta atoms was observed at room temperature but not at elevated temperatures. Scattered Ar+ ion fraction measurements showed that scattered Ar+ ions are enhanced by charge buildup on the LiTaO3 surface, whereas recoiled ions are not affected. The effects of surface charging phenomena on TOF-SARS could be eliminated by either heating the LiTaO3 crystal to ∼200 °C or by application of a low energy electron beam to the crystal surface. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6017-6019 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Precipitation of metal silicides was observed in as-grown Czochralski silicon crystals contaminated with 3d transition metals. The result indicates that a copper silicide precipitation occurs favorably in a crystal grown under slow cooling conditions. In the case of titanium disilicide formation, which involves silicon interstitial absorption, supersaturation of silicon interstitials produced by oxygen precipitation could lead to a coprecipitation of titanium and silicon interstitials. Based upon the present analysis, it is suggested that 3d transition-metal atoms incorporated into the crystal may remain in the silicon lattice as isolated interstitial impurities or precipitate via silicide formation, depending upon the crystal cooling conditions. The precipitation of metal silicides could take place at the crystal lattice defects which were created during crystal solidification.
    Materialart: Digitale Medien
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  • 3
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A systematic study of the effect of sputtering conditions, for each layer of the magneto-optical SiN 500 A(ring)/TbFeCo 200 A(ring)/SiN 200 A(ring)/Al 600 A(ring) disks, such as power and Ar gas flow rate on the noise levels (NL) and carrier-to-noise ratio (CNR) was performed for the 532 nm high density storage media in this work. The NL dropped to its minimum value of −71.3 dB as the sputtering power for the first SiN increased from 0.5 to 1.5 kW. With a further increase in sputtering power to 2.5 kW, it sharply increased to −64.5 dB. This was ascribed to the smooth and dense surface of the first layer at 1.5 kW, as was observed in the atomic forces microscopy images. The spherical, isotropic, fine grains with a diameter of about 0.2–0.7 μm at 1.5 kW were found, while the longitudinal, directional granular features with a length of 2.5 μm were seen at 2.5 kW. The highest CNR of 46.3 dB was observed at 0.6 kW with a constant sputtering Ar gas flow rate of 25 sccm for the magneto-optical layer. The sputtering conditions for other layers are as follows: 1.5 kW with sputter Ar/N2 gas flow rate of 30 sccm/11 sccm for the first and third SiN layer, and 0.6 kW with 25 sccm of Ar for the Al reflection layer. This is due to the smooth surface morphologies of the magneto-optical layer at this optimum sputtering pressure, as previously reported in similar research. To obtain a high readout signal, the phase compensation for the elliptic laser beam has been considered. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 109 (1998), S. 9574-9582 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: The chemisorption site of the simplest prototypical model alkanethiol compound, methanethiol [CH3SH], on a Pt{111} surface in the temperature range 298–1073 K has been investigated by means of time-of-flight scattering and recoiling spectrometry (TOF-SARS) and low-energy electron diffraction (LEED). TOF-SARS spectra of the scattered and recoiled ions plus fast neutrals were collected as a function of crystal azimuthal rotation angle δ and beam incident angle α using 4 keV Ar+ primary ions. At room temperature, the adsorption of methanethiol produces a partially disordered overlayer that gives rise to a diffuse (3×3)R30° LEED pattern and three-fold symmetry in the scattering profiles. Heating this surface layer results in the sequential dehydrogenation of the methanethiol and the formation of S–C species at elevated temperatures. By ∼373 K, hydrogen is absent from the TOF-SARS spectra and a sharp (3×3)R30° LEED pattern is observed. The model developed from the scattering data is consistent with the preservation of the adsorption site at elevated temperatures, but a change in the S–C bond angle with respect to the surface plane. For the fully dehydrogenated species, the S atoms reside ∼1.6±0.2 Å above the surface in face-centered-cubic (fcc) three-fold sites and the C atoms reside ∼1.5±0.4 Å in hexagonal-close-packed (hcp) three-fold sites. It is proposed that the remarkable stability of this SC adsorbate results from bonding of both the S and C atoms to the surrounding Pt atoms, i.e., a Pt-stabilized SC moiety. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 2213-2215 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report the enhancement of ferroelectric properties in vanadium-doped Bi4Ti3O12 (BIT) thin films deposited by a sol–gel method. Compared to the undoped BIT, V-doped BIT (BTV) showed higher polarizations and a better fatigue resistance as reported in ceramic systems recently [Noguchi et al., Appl. Phys. Lett. 78, 1903 (2001)]. BTV showed a remanent polarization (2Pr) of 15.9 μC/cm2, higher than the value for BIT, 12.5 μC/cm2. The polarization of the BTV thin film capacitor decreased by 19%, while that of the BIT decreased by 23% after the fatigue test with 4×1010 switching cycles. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1181-1183 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Plasma parameters from the measured electron energy distribution are obtained with changing the chamber height at low pressure 2 mTorr. It is observed that electron density has a local peak at a certain chamber height while electron temperature decreases monotonously with increasing chamber height. The chamber height with the maximum electron density is shifted according to the bounce resonance condition when the driving frequency is changed. The electron kinetic model well agrees with the experiment. This shows that the electron density peak against the plasma size is due to the electron bounce resonance that has been theoretically discussed. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 3498-3501 
    ISSN: 1089-7674
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Pressure and He mixing effects on plasma parameters in electron temperature control using a grid system are investigated. Electron temperature is higher in lower pressure, when the electron temperature is high and not controlled. Electron density can be increased by about three times by decreasing the source gas pressure from 20 to 1 mTorr, and by about two times by He mixing in the temperature controlled region (diffusion region), while the electron density is decreased in the source region. This electron density increase is mainly due to the increase of the high energy electron population, and the measured electron energy distribution functions clearly show this. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
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  • 8
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 1384-1394 
    ISSN: 1089-7674
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In high-density plasma etching processes for ultra-large-scale integrated (ULSI) circuits, the uniformity of the plasma over a large area is of major concern. Recently a resonant inductively coupled plasma source [S. S. Kim et al., Appl. Phys. Lett. 77, 492 (2000)] has been proposed for large-area plasma processing, which achieves large-area plasma uniformity by properly tuning its antenna with an external variable capacitor. In the present paper, the plasma transport and poly-Si etching characteristics of this plasma source have been numerically investigated using a self-consistent model for electron heating, plasma transport, and microscopic etching profiles. The numerical simulation results indicate that uniform poly-Si etching over 300 mm in diameter can be easily achieved in this plasma source. © 2001 American Institute of Physics.
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  • 9
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 7 (2000), S. 766-769 
    ISSN: 1089-7674
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In a modern plasma etching device, the plasma sheath potential is usually superposed by an externally driven oscillating voltage to enhance and control the bombarding ion energy. A collisionless particle simulation is used to study the variation of average kinetic energy 〈K〉(νrf) of bombarding ions as a function of a wide range of sheath oscillation frequency νrf (0.1νpi≤νrf≤10νpi, where νpi is the ion plasma frequency). It is found that a resonance phenomenon between the ion transit motion and the sheath oscillation can yield a strongly peaked enhancement of 〈K〉(νrf) near νrf(similar, equals)0.5νpi. Ion species with different mass show the peaks at different νrf. The relative importance of different ion molecules in an ion-enhanced etching process will be sensitive to νrf. This phenomenon may allow a reduction of the undesirable capacitive coupling by optimizing νrf to yield an enhanced 〈K〉 of desired ion species at low applied voltages. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
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  • 10
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 6 (1999), S. 2926-2935 
    ISSN: 1089-7674
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A one-dimensional analysis of electron heating process in a weakly magnetized, inductively coupled plasma (MICP) is presented. It is found that the main difference in the heating process of a MICP from that of a usual unmagnetized ICP is in that circularly polarized wave modes can exist in the plasma. The right handed circularly polarized wave (R-wave) can propagate into the plasma and its amplitude can be enhanced by cavity resonance effect at an appropriate chamber length and external magnetic field strength. The enhanced R-wave amplitude can raise the heating efficiency significantly. It is also found that a bounce cyclotron-resonance effect can exist, which, however, is not as significant as the cavity resonance effect. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
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