ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Ihre E-Mail wurde erfolgreich gesendet. Bitte prüfen Sie Ihren Maileingang.

Leider ist ein Fehler beim E-Mail-Versand aufgetreten. Bitte versuchen Sie es erneut.

Vorgang fortführen?

Exportieren
  • 1
    Schriftenreihen ausleihbar
    Schriftenreihen ausleihbar
    Untersuchung instrumenteller Fehler von Universal- und Passageinstrument mit Hilfe von Autokollimation (1968)
    München : Beck
    Dazugehörige Bände
    Details Verfügbarkeit
    Signatur: SR 99.0038(117)
    In: Deutsche Geodätische Kommission bei der Bayerischen Akademie der Wissenschaften
    Materialart: Schriftenreihen ausleihbar
    Seiten: 144 S.
    Serie: Deutsche Geodätische Kommission bei der Bayerischen Akademie der Wissenschaften : Reihe C, Dissertationen 117
    Sprache: Deutsch
    Standort: Kompaktmagazin unten
    Zweigbibliothek: GFZ Bibliothek
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    BUCH
    Link zum Bibliothekskatalog
    get availability status
  • 2
    Digitale Medien
    Digitale Medien
    Infrared laser chemistry in carbonyl sulfide (1983)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 87 (1983), S. 4375-4377 
    Details
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie , Physik
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/j100245a013
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 3
    Digitale Medien
    Digitale Medien
    Raman scattering and stress measurements in Si1−xGex layers epitaxially grown on Si(100) by ion-beam sputter deposition (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4268-4277 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Si1−xGex thin films have been grown on silicon substrates by ion-beam sputter deposition (IBSD). Film stress has been determined from the change in deflection curvature of the substrate after deposition and strain has been investigated by using Raman scattering spectroscopy. These properties have been studied as a function of different parameters: growth temperature, layer thickness, and annealing conditions. Raman and stress results are in close correspondence with regard to effects of deposition temperature. Si-rich films (0≤x≤0.3) were compressively strained for all deposition temperatures. A compressive to tensile stress change was observed in the Ge-rich alloys (x=0.6) when the growth temperature reached Tg ≈ 500 °C. In addition, the strain as a function of depth from the surface has been studied by changing the laser wavelength. The strain has been shown to increase from the surface to the interior of the film. The origin of the stress observed in IBSD films is discussed and we show that this stress is due to the effect of the bombardment of the growing film by energetic sputtered atoms and can be understood by using the atomic peening model.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.349104
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 4
    Digitale Medien
    Digitale Medien
    Electron cyclotron resonance applicator of the Wilkinson microwave power divider type for large diameter ion sources : Proceedings of the 7th international conference on ion sources (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 843-845 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: We have designed and tested a new model of coaxial 2.45 GHz electron cyclotron resonance (ECR) ion source based on the splitting of the microwave power traveling along a coaxial line into a set of periodically distributed antennas. Our motivation was the study of the scaling-up feasibility of a coaxially fed ion source in which it is desirable to circumvent the transverse electric and magnetic (TEM) mode conversion into azimuthally unsymmetrical higher-order modes. Another important characteristic of this source is the possible incorporation of permanent magnets into the individual antennas in order to create the ECR zones around the latter. The validity of these concepts was tested on a 5 cm in external diameter coaxial ECR ion source in which the single thick coaxial antenna was replaced by a set of quarter wavelength magnetized rod antennas in order to enhance the magnetic field created by the external splitted ring magnets. For an incident power of 100 W and an argon pressure of 1.2×10−4 mbar, a 500 eV singly charged ion beam with a current density of 1 mA/cm2 was delivered through an accel-decel set of grids. Implementation of a scaled-up 20 cm in diameter ion source is in progress. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1148578
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 5
    Digitale Medien
    Digitale Medien
    A compact electron cyclotron resonance proton ion source : Proceedings of the 6th international conference on ion sources (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 994-996 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: The demand has increased for a high-current, long lifetime ion source in various fields of application. The present work concerning the production of atomic hydrogen ions H+ in competition with molecular ions H+2 has been essentially motivated by recent trends in the field of passivation of silicon [V. Le Thanh, M. Eddrief, and C. A. Sébenne, Appl. Phys. Lett. 64, 3308 (1994)]. For a given low neutral energy, passivation with a neutral atomic beam H instead of H2 is preferred. The most straightforward method to produce the neutral beams is by the extraction of low energy atomic ions, and neutralization by electron capture. We have thus developed an electron cyclotron resonance coaxial hydrogen ion source that produces a 30-mm-diam ion beam, is operated with a microwave power in the range of 50–130 W, and has a pressure of neutrals in the range of 6×10−4–4×10−3 mbar. We have compared the proportion of extracted H+ and H+2 ions with the two principal parameters of the plasma: the pressure of neutrals and microwave injected power. These parameters have been optimized for the production of an 83% atomic ion beam. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1146795
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 6
    Digitale Medien
    Digitale Medien
    A slab-shaped electron cyclotron resonance ion beam source for in-line running target treatments : Proceedings of the 6th international conference on ion sources (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 1000-1002 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: The possibility of industrial surface treatments of broad metallic rolls by appropriate ion beams has motivated our study of an immersed electron cyclotron resonance slab-shaped ion source composed of a number of elementary microwave modules fed in parallel through a linear power divider. We describe the performances of a single module implemented by a 45-mm-height ionization chamber of 80×15 mm cross section surrounded by a set of permanent magnets in a multipole configuration. A current density of 5 mA/cm2, uniform to within 10% over a 60 mm width, has been obtained for argon as well as for oxygen and nitrogen under a 500 W input power and a gas pressure of 5–8×10−3 mbar in the ionization chamber. Moreover, we have investigated the case of the non-normal incidence of the ion beam onto the running target. For 30° and 60° incidence angles with respect to the normal, the current density loss is 15% and 25%, respectively. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1146796
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 7
    Digitale Medien
    Digitale Medien
    Radio frequency, microwave, and electron cyclotron resonance ion sources for industrial applications: A review (invited) : Proceedings of the 6th international conference on ion sources (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 895-900 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: We recall the different classes of electromagnetic field excited ion sources and their characteristic features in the scope of industrial applications. Emphasis is laid on various criteria and conditions: long source lifetimes, intense inert or reactive ion beams free from contaminants, low process pressures, severe environmental conditions, reliability, possibility of automatic control, simplicity in handling, and maintenance. Examples of sources particularly suited to processes involving deposition or surface modification of materials are reviewed. Specific technological solutions and designs applied to these sources for industrial applications are examined. A few examples of applications using ion-beam processes in different fields (optics, microelectronics, and mechanics) are presented and further trends, especially for inline surface treatments, are examined. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1146832
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 8
    Digitale Medien
    Digitale Medien
    Effect of growth conditions on the structural properties of ion beam sputter deposited SiGe epilayers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4975-4981 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Structural properties of Si1−xGex layers epitaxially grown on Si(100) by Ion Beam Sputter Deposition were studied as a function of growth temperature and film thickness. It was shown that the structure of defects strongly depends on the growth temperature, Tg. The dislocations cross grid which is observed at the SiGe/Si interface for layers grown at high (700 °C) Tg is missing in layers grown at low ((approximately-less-than)550 °C) Tg, while a new type of defects parallel to {001} and {113} lattice planes appear at these temperatures. The optimal Tg for a Ge content of 20-25 at. % was found to be close to 550-625 °C. Surface roughness for all the growth temperatures was found to be less than that for such a "smooth'' technique as MBE. Photoluminescence studies revealed, to the best of our knowledge for the first time, two peaks on the low energy side in the neighborhood of the Si(TO) peak of the epilayers. The evolution of the intensity of these peaks is strongly correlated with the dynamics of strain relaxation and can be attributed to a set of dislocations at the SiGe/Si interface extending both to the epilayer and to the bulk Si. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.359788
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 9
    Digitale Medien
    Digitale Medien
    Epitaxial growth of yttria-stabilized zirconia films on silicon by ultrahigh vacuum ion beam sputter deposition (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1506-1508 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Yttria-stabilized zirconia (YSZ) films have been grown on Si (100) substrates by ion sputter deposition using ultrahigh vacuum system with in situ diagnostic equipment. Epitaxial conditions of YSZ (100) films were achieved between 700 and 800 °C by using an oxygen partial pressure around 3×10−4 Pa during the deposition. The film stoichiometry was measured by Rutherford backscattering spectrometry and nuclear reaction analysis. Crystalline quality of the YSZ layers was determined by x-ray diffraction, channeling of 4He+ ion beam, and in situ reflection high-energy electron diffraction pattern.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.100431
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 10
    Digitale Medien
    Digitale Medien
    A microwave plasma cathode electron gun for ion beam neutralization : Proceedings of the 7th international conference on ion sources (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 1153-1155 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: It is well known that there exist two distinct types of ion beam neutralization, viz., charge and current neutralization. We have designed and studied a versatile and compact microwave plasma (MP) cathode electron gun dedicated to charge as well as current neutralization. Unlike the conventional hot cathode neutralizer, this MP cathode allows operation of the electron gun in a reactive gaseous environment when it is eventually associated with an electron cyclotron resonance (ECR) ion gun. Charge neutralization can be easily carried out by extracting from the MP cathode through a 1 mm diameter hole, a 35 mA electron beam under a 20 V voltage; the MP cathode being fed with a 75 W microwave power at 2.45 GHz. Higher beam intensities could be obtained using a multiaperture thin plate. Electron beam intensities as high as 300 mA and energies of 2 keV needed for current neutralization, e.g., when an ion beam impinges onto a thick dielectric surface, are obtained via a two-stage arrangement including an anodic chamber associated with a set of three monoaperture plates for the electron beam extraction. Transport of 200–2000 eV electron beams is ensured using focusing optics composed of three aligned tubes 6 cm in diameter and unsymmetrically polarized. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1148654
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
Schließen ⊗
Diese Webseite nutzt Cookies und das Analyse-Tool Matomo. Weitere Informationen finden Sie hier...