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  • 1985-1989  (169)
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  • 1
    Publication Date: 1989-01-01
    Print ISSN: 0305-1048
    Electronic ISSN: 1362-4962
    Topics: Biology
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Industrial & engineering chemistry research 26 (1987), S. 1232-1234 
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1246-1252 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The shallow defect evolution in Si-implanted and -annealed liquid-encapsulated Czochralski-grown GaAs is investigated by photoluminescence experiments. Three major emission lines are found. The first emission line located at 1.492 eV corresponds to the SiGa-CAs radiative recombination. The remaining two lines located at 1.44 and 1.40 eV are shown to correspond to GaI-SiAs and VAs-SiAs radiative recombinations, respectively. The effects of these three shallow centers on the silicon activation efficiency are discussed with respect to different annealing and implantation conditions.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4835-4838 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The role of interfaces in influencing behavior of antiferromagnetic semiconductors has been studied in the new strained layer MnSe/ZnSe superlattice system, grown by molecular-beam epitaxy, with individual MnSe layers approaching the monolayer limit. Large paramagneticlike contributions to overall magnetization are observed at low temperatures. Such anomalous characteristics are interpreted in terms of frustration against antiferromagnetic ordering by microstructure effects at the heterointerfaces.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3634-3636 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The strain distribution of a GexSi1−x/Si strained layer superlattice (SLS) as a function of the distance from the superlattice/substrate interface has been studied by Raman spectroscopy. A small-angle bevel was made by angle lapping on a given thick GexSi1−x/Si SLS so that it is possible to probe the structure at different thicknesses. The Raman spectrum as a function of the distance from interface is then obtained. The results indicate that, as we move away from the substrate interface, the compression strain in the alloy layers decreases while the tensile strain in the Si layers increases. From linewidth measurement of the Raman peaks, it appears that there is an improved crystal quality and a lower concentration of defects going away from the substrate interface.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2467-2468 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The laser output power of a traveling wave excitation TE N2 laser in which the discharge was divided into several sections were calculated theoretically for the spark gap inductance Ls from 20 to 140 nH, the sectional length of the discharge from 5 to 50 cm, and the gas pressure P from 40 to 90 Torr. The experimental confirmation has also been conducted.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Inorganic chemistry 25 (1986), S. 4610-4611 
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 88 (1988), S. 2071-2082 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have investigated the temperature and coverage-dependent transformations of the ordered structures of oxygen on Pd(100). The four ordered structures are the chemisorbed c(2×2) and p(2×2) lattices, and the reconstructed p(5×5) and ((5)1/2×(5)1/2)R27° lattices. We present evidence that the p(5×5) reconstruction forms in an activated stepfrom c(2×2) regions. The onset of p(5×5) formation is associated with an increase in oxygen sticking coefficient. In thermal desorption, there are three states which can be correlated directly with the structure of the adsorbed phase during desorption: At lowest coverage, the α state shows the traits of second-order kinetics and is due to desorption from a disordered adlayer. At higher coverage, the β state appears and is due to desorption from a layer with c(2×2) order. There is a lower barrier to desorption in the β state than in the α state because of the repulsive second-nearest-neighbor interactions in the c(2×2). At highest coverage, the sharp and narrow γ state emerges. This is accompanied by decomposition of the ((5)1/2×(5)1/2)R27° reconstruction, in which cooperative stabilization of the reconstruction by oxygen atoms effectively creates strong quasiattractive oxygen–oxygen interactions. There are interesting similarities between the oxygen-stabilized reconstructions of Pd(100) and the initial stages of oxidation of Ni(100), as well as the oxygen-stabilized reconstructions of Pt(100). The data are obtained from low-energy electron diffraction coupled with a computer-interfaced Video camera, Auger electron spectroscopy, and thermal desorption spectroscopy.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1839-1843 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The elastic field of a semi-infinite wedge crack and its interaction with a screw dislocation under mode III loading conditions are examined. The stress field around the wedge crack is expressed in terms of a wedge stress intensity factor. The rate of falloff of the stress field with distance from the crack tip is found to be a function of the wedge angle. The relationship between the stress intensity factors for the wedge and sharp cracks is derived and used to estimate the magnitude of stress relaxation occurring at the crack tip due to crack blunting. The crack extension force for the wedge crack is calculated and is shown to be zero. The modifications in the stress field and the local wedge stress intensity factor due to the presence of the dislocation are calculated. From the image stress on the dislocation, the condition for the emission of dislocations from the wedge crack is obtained in terms of the critical wedge stress intensity factor for dislocation generation. It is found that the emission of dislocations from the crack tip is more difficult when the crack is blunting.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1478-1481 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Theoretical investigation of traveling wave excitation using the property of photon addition has been carried out in a 50-cm-long TE N2 laser tube with ten separated discharge sections. The laser power outputs under traveling wave excitation have been calculated numerically with varying gas pressures from 30 to 85 Torr and applied voltages from 14 to 21 kV, and compared with those of simultaneous excitation. Theoretical results show that the laser peak power increases with increasing applied voltage, and has a maximum value at gas pressure P(approximately-equal-to)60 Torr. The laser pulse width is narrowed and the laser power is doubled under the traveling wave excitation, compared with simultaneous excitation. Experimental confirmation also has been conducted. Experimentally observed gas presssure dependence of output power agrees qualitatively well with theoretical results. The maximum discrepancy in the absolute values between theory and experiment is approximately 50%.
    Type of Medium: Electronic Resource
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