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  • 1
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    In:  EPIC3New Journal of Physics, 19(3), pp. 033029, ISSN: 1367-2630
    Publikationsdatum: 2017-05-31
    Beschreibung: Coupled oscillator networks show complex interrelations between topological characteristics of the network and the nonlinear stability of single nodes with respect to large but realistic perturbations. We extend previous results on these relations by incorporating sampling-based measures of the transient behaviour of the system, its survivability, as well as its asymptotic behaviour, its basin stability. By combining basin stability and survivability we uncover novel, previously unknown asymptotic states with solitary, desynchronized oscillators which are rotating with a frequency different from their natural one. They occur almost exclusively after perturbations at nodes with specific topological properties. More generally we confirm and significantly refine the results on the distinguished role tree-shaped appendices play for nonlinear stability. We find a topological classification scheme for nodes located in such appendices, that exactly separates them according to their stability properties, thus establishing a strong link between topology and dynamics. Hence, the results can be used for the identification of vulnerable nodes in power grids or other coupled oscillator networks. From this classification we can derive general design principles for resilient power grids. We find that striving for homogeneous network topologies facilitates a better performance in terms of nonlinear dynamical network stability. While the employed second-order Kuramoto-like model is parametrised to be representative for power grids, we expect these insights to transfer to other critical infrastructure systems or complex network dynamics appearing in various other fields.
    Repository-Name: EPIC Alfred Wegener Institut
    Materialart: Article , isiRev
    Format: application/pdf
    Standort Signatur Erwartet Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1133-1138 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A systematic study of O implantation into Si at MeV energies and stoichiometric doses is reported. Si substrates were implanted with 1 MeV O ions to doses of 0.73, 1.45, and 2.18×1018 cm−2 at implant temperatures of 150, 300, and 450 °C. The samples were then subjected to a high temperature anneal (1250 °C for 2 h). Cross-sectional transmission electron microscopy and Rutherford backscattering combined with channeling were used to study the resultant defect structures. The microstructure after annealing was found to be highly implant temperature dependent while very little dose dependence was observed. In the Si overlayer, twinning and polycrystalline Si were observed at the lowest implant temperature while SiO2 precipitation was apparent at all temperatures with precipitate size increasing with implant temperature. In the SiO2 layer, Si islands were observed at the high implant temperatures. A comparison is made between MeV and conventional implant energies. At MeV implant energies and stoichiometric doses, crystallinity in the Si overlayer is retained even at implant temperatures as low as 150 °C. Such temperatures are shown to be advantageous for inhibiting SiO2 precipitation in the Si overlayer.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1799-1804 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Modification of GaAs by Si+-ion implantation is an important process for selective doping of the material. Defects caused by the implantation process often lead to incomplete electrical activation, and annealing procedures are used to recover the crystal quality. Results are presented of variable-energy positron (VEP) and cross-sectional transmission electron microscopy (XTEM) studies of a series of GaAs samples implanted with moderate to high fluences of 3×1013, 3×1014, and 1×1015 Si+ ions cm−2. Samples were irradiated at room temperature, and studied both before and after thermal annealing for one hour at 850 °C. In all cases XTEM results show a high density of small extrinsic dislocations after implantation, and VEP shows high concentrations of point (vacancy type) defects. Annealing leads to a decrease in the point-defect concentration in the lowest-fluence sample, but both XTEM and VEP confirm the formation of macroscopic (i.e., (approximately-greater-than)20 A(ring) diameter) voids following annealing. These data are discussed in the context of microscopic models for defect formation and migration.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 1460-1463 
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: An electrostatically guided positron beam which is variable in energy from 0 to 60 keV is described. A frozen inert gas (Ar, Kr, and Xe) is used as the positron moderator. The efficiency, ε, defined as the ratio of the number of slow positrons at the target to the number of positrons emitted by the source has been measured; the values obtained for Ar, Kr, and Xe were ε∼ 2.5×10−4, 1.6×10−4, and 1.1×10−4, respectively. We estimate a source/moderator efficiency of εm∼7.6×10−4, 4.7×10−4, and 3.0×10−4 for Ar, Kr, and Xe, respectively, which includes source effects, grid transmission, geometrical losses, and beam transport. These values are comparable to the best reported values for thin metal foil moderators. The measured εm is specific to the electrostatic system; significantly higher values for the same moderator should be attainable in magnetically guided beams, where higher transmission for moderators with large energy spreads is usually obtained.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 5
    Digitale Medien
    Digitale Medien
    Oxford, UK : Blackwell Publishing Ltd
    Geophysical prospecting 40 (1992), S. 0 
    ISSN: 1365-2478
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Geologie und Paläontologie , Physik
    Notizen: The generalized Radon transform (GRT) inversion contains an explicit relationship between seismic amplitude variations, the reflection angle and the physical parameters which can be used to describe the earth efficiently for inversion purposes. Using this relationship, we have derived parametrizations for acoustic and P–P scattering so that the variations in seismic amplitude with reflection angle for each parameter are sufficiently independent. These parametrizations show that small offset and large offset amplitudes are related to different physical parameters. In the case of acoustic scattering, the small-offset amplitudes are related to impedance variations while large-offset amplitudes are related to velocity variations. A similar result has been established for P–P scattering.The Born approximation (which is used to derive the GRT inversion) does not correctly predict the amplitude due to velocity variations at large offsets, and thus the inversion of velocity is not as satisfactory as the inversion of impedance.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 6
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2185-2187 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A library of 256 differently doped thin films of (BaxSr1−x)TiO3 (where 0.5〈x〈1.0) was generated on a 1 in.×1 in. LaAlO3 substrate using multistep thin-film deposition techniques together with a quaternary masking strategy. Appropriate postannealing processing afforded high-quality epitaxial thin films. The microwave properties, i.e., dielectric constant and loss tangent, of samples in the library were characterized with a scanning-tip microwave near-field microscope at 1 GHz, and the results were found to be consistent with measurements made with interdigital electrodes. Specific dopants were found to significantly affect the dielectric constant and tangent loss. Tungsten, in particular, reduces the tangent loss. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 7
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3506-3508 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A near-field microscope which operates in the rf/microwave frequency range is described. In this microscope, a scanning tunneling microscope (STM)-like tip rather than an aperture is used as a point-like evanescent field emitter. A spatial resolution of ∼5 μm (∼λ/100 000) is achieved in the current version. The design of the microscope as well as the principal factors which affect its performance are discussed. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 8
    Digitale Medien
    Digitale Medien
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Biophysics and Biomolecular Structure 24 (1995), S. 435-462 
    ISSN: 1056-8700
    Quelle: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Thema: Biologie , Physik
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 9
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 163-165 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Ultrathin silicon nitride films on Si(100) have been studied using x-ray photoelectron spectroscopy, medium energy ion scattering, Raman spectroscopy, and variable-energy positron annihilation spectroscopy. Films ∼10-nm-thick were prepared by remote microwave plasma chemical vapor deposition. A compressive stress of about 0.4 GPa was found by measuring the Raman shift of the fifth-harmonic LO mode of the silicon substrate. The film properties, however, changed significantly upon vacuum annealing. Annealing at 100 °C for 1 h resulted in an increase of nitrogen concentration near the film surface, probably because of nitrogen surface segregation. Annealing at 100–500 °C also released film induced stress and a complete stress release was achieved by annealing at 500 °C for 1 h. Positron annihilation results showed that vacuum annealing only affected the film but not the substrate.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 10
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 894-896 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Combinatorial libraries of parallel-plate capacitors, consisting of Pt and La0.5Sr0.5CoO3 electrodes and a doped BaxSr1−xTiO3 dielectric layer, have been fabricated and analyzed to systematically study the effects of dopants on device performance. Epitaxial heterostructure libraries with sharp interfaces were generated from amorphous layers on LaAlO3 substrates. Two hundred and forty different host/dopant combinations were synthesized on a 1/2 in. by 1/2 in. substrate, with 23 capacitors for each combination. Addition of 1.5 mol % W was found to increase the figure of merit (ε/Ileak) 220-fold and reduce the high-frequency (MHz and GHz) loss tangent by fourfold. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
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